公开(公告)号：AU2016200610B2

公开(公告)日：2017-12-07

申请号：AU2016200610

申请日：2016-02-01

Applicant: SOLEXEL INC

Inventor： DESHPANDE ANAND ,  KAPUR PAWAN ,  RANA VIRENDRA V ,  MOSLEHI MEHRDAD M ,  SEUTTER SEAN M ,  DESHAZER HEATHER ,  KOMMERA SWAROOP ,  ANBALAGAN PRANAV ,  RATTLE BENJAMINE E ,  COUTANT SOLENE

IPC: H01L31/04 ,  H01L31/18

Abstract: Fabrication methods and structures relating to multi-level metallization of solar cells are described. In one embodiment, a back contact solar cell comprises a substrate having a substrate having a light receiving frontside surface and a backside surface for forming patterned emitter 5 and non-nested base regions. Interdigitated doped emitter and base regions are formed on a backside surface of a crystalline semiconductor substrate. A patterned electrically insulating layer stack comprising a combination of at least a doped layer and an undoped capping layer is formed on the patterned doped emitter and base regions. A contact metallization pattern is formed comprising emitter metallization electrodes contacting the emitter regions and non 10 nested base metallization electrodes contacting the base regions wherein the non-nested base metallization electrodes are allowed to go beyond the base regions to overlap at least a portion of said patterned insulator without causing electrical shunts in the solar cell.

公开(公告)号：MY160251A

公开(公告)日：2017-02-28

申请号：MYPI2011002341

申请日：2009-11-27

Applicant: SOLEXEL INC

Inventor： MOSLEHI MEHRDAD M ,  WANG DAVID XUAN-QI

IPC: H01L31/042 ,  H01L21/306 ,  H01L31/18

Abstract: THE PRESENT DISCLOSURE PRESENTS A PARTIALLY-TRANSPARENT (SEE-THROUGH) THREE-DIMENSIONAL THIN FILM SOLAR CELL (3-D TFSC) SUBSTRATE. THE SUBSTRATE INCLUDES A PLURALITY OF UNIT CELLS (300). EACH UNIT CELL STRUCTURE HAS THE SHAPE OF A TRUNCATED PYRAMID (301,302,304,305), AND ITS PARAMETERS MAY BE VARIED TO ALLOW A DESIRED PORTION OF SUNLIGHT TO PASS THROUGH

公开(公告)号：MY158500A

公开(公告)日：2016-10-14

申请号：MYPI2013700332

申请日：2011-08-05

Applicant: SOLEXEL INC

Inventor： MOSLEHI MEHRDAD M ,  XUAN-QI WANG DAVID ,  KARL-JOSEF KRAMER ,  SEAN SEUTTER

IPC: H01L31/00

Abstract: FABRICATION METHODS AND STRUCTURES RELATING TO BACKPLANES FOR BACK CONTACT SOLAR CELLS THAT PROVIDE FOR SOLAR CELL SUBSTRATE REINFORCEMENT AND ELECTRICAL INTERCONNECTS ARE DESCRIBED. THE METHOD COMPRISES DEPOSITING AN INTERDIGITATED PATTERN OF BASE ELECTRODES AND EMITTER ELECTRODES ON A BACKSIDE SURFACE OF A SEMICONDUCTOR SUBSTRATE, FORMING ELECTRICALLY CONDUCTIVE EMITTER PLUGS AND BASE PLUGS ON THE INTERDIGITATED PATTERN, AND ATTACHING A BACKPLANE HAVING A SECOND INTERDIGITATED PATTERN OF BASE ELECTRODES AND EMITTER ELECTRODES AT THE CONDUCTIVE EMITTER AND BASE PLUGS TO FORM ELECTRICAL INTERCONNECTS. [FIG. 16A]

公开(公告)号：AU2012294932B2

公开(公告)日：2016-08-11

申请号：AU2012294932

申请日：2012-08-09

Applicant: SOLEXEL INC

Inventor： MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER K-JOSEF ,  RANA VIRENDRA V ,  SEUTTER SEAN ,  DESHPANDE ANAND ,  CALCATERRA ANTHONY ,  OLSEN GERRY ,  MANTEGHI KAMRAN ,  STALCUP THOM ,  KAMIAN GEORGE D ,  WANG DAVID XUAN-QI ,  SU YEN-SHENG ,  WINGERT MICHAEL

IPC: H01L31/042 ,  H01L31/18

Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects as well as Fabrication methods and structures for forming thin film back contact solar cells are described.

公开(公告)号：AU2013222069A1

公开(公告)日：2014-10-16

申请号：AU2013222069

申请日：2013-02-26

Applicant: SOLEXEL INC

Inventor： YONEHARA TAKAO ,  RANA VIRENDRA V ,  SEUTTER SEAN ,  MOSLEHI MEHRDAD M ,  TAMILMANI SUBRAMANIAN

IPC: H01L21/301 ,  B23K26/00 ,  H01L21/268

Abstract: Methods and systems are provided for the split and separation of a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, micro-electro-mechanical system (MEMS), or optoelectronic devices, from a thicker donor wafer using laser irradiation.

公开(公告)号：AU2014208227A1

公开(公告)日：2014-08-21

申请号：AU2014208227

申请日：2014-07-30

Applicant: SOLEXEL INC

Inventor： MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER KARL-JOSEF ,  RANA VIRENDA V ,  SEUTTER SEAN ,  DESHPANDE ANAND ,  CALCATERRA ANTHONY ,  OLSEN GERRY ,  MANTEGHI KAMRAN ,  STALCAP THOM ,  KAMIAN GEORGE D ,  WANG DAVID XUAN-QI ,  SU YEN-SHENG ,  WINGERT MICHAEL

IPC: H01L31/042 ,  H01L31/0224 ,  H01L31/18

Abstract: Fabrication methods and structures relating to multi-level metallization for solar cells as well as fabrication methods and structures for forming thin film back contact solar cells are provided.

公开(公告)号：AU2012362505A1

公开(公告)日：2014-08-14

申请号：AU2012362505

申请日：2012-12-26

Applicant: SOLEXEL INC

Inventor： MOSLEHI MEHRDAD M ,  RANA VIRENDRA V ,  COUTANT SOLENE ,  DESHAZER HEATHER ,  ANBALAGAN PRANAV ,  RATTLE BENJAMIN

IPC: H01L31/042 ,  H01L31/0236 ,  H01L31/18

Abstract: Methods for improving the light trapping characteristics of crystalline silicon solar cells are provided. In one embodiment, the backside surface of a crystalline silicon solar cell substrate is textured with a pulsed laser beam. The textured backside surface of the back contact solar cell crystalline silicon substrate is then annealed to remove damage from the laser texturization process. Backside metallization is then formed on backside base and emitter regions.

公开(公告)号：MY168146A

公开(公告)日：2018-10-11

申请号：MYPI2014701287

申请日：2012-11-20

Applicant: SOLEXEL INC

Inventor： WINGERT MICHAEL ,  MOSLEHI MEHRDAD M

IPC: H01L31/0224 ,  H01L27/142 ,  H01L31/05

Abstract: A back contact solar cell with on-cell electronics is provided. The back contact solar cell is comprised of a semiconductor substrate having a light capturing front side and a backside opposite the light capturing front side. A first interdigitated metallization pattern is positioned on the backside of the semiconductor substrate and a backplane supports and is attached to the backside of the semiconductor substrate. A second interdigitated metallization pattern positioned on the backplane and is connected to the first interdigitated metallization pattern. An on-cell electronic component is attached to the second interdigitated metallization pattern and electrical leads connect the on-cell electronic component to the second interdigitated metallization pattern. (The Most Illustrative Drawing: Fig 20)

公开(公告)号：MY165969A

公开(公告)日：2018-05-18

申请号：MYPI2011005354

申请日：2010-05-05

Applicant: SOLEXEL INC

Inventor： KAMIAN GEORGE ,  NAG SOMNATH ,  TAMILMANI SUBBU ,  MOSLEHI MEHRDAD M ,  KRAMER KARL-JOSEF ,  YONEHARA TAKAO

IPC: C30B1/10 ,  C25D11/32

Abstract: THIS DISCLOSURE ENABLES HIGH-PRODUCTIVITY FABRICATION OF SEMICONDUCTOR-BASED SEPARATION LAYERS (MADE OF SINGLE LAYER OR MULTI-LAYER POROUS SEMICONDUCTORS SUCH AS POROUS SILICON, COMPRISING SINGLE POROSITY OR MULTI-POROSITY LAYERS), OPTICAL REFLECTORS (MADE OF MULTI-LAYER/MULTI-POROSITY POROUS SEMICONDUCTORS SUCH AS POROUS SILICON), FORMATION OF POROUS SEMICONDUCTOR (SUCH AS POROUS SILICON) FOR ANTI-REFLECTION COATINGS, PASSIVATION LAYERS, AND MULTI-JUNCTION, MULTI-BAND-GAP SOLAR CELLS (FOR INSTANCE, BY FORMING A VARIABLE BAND GAP POROUS SILICON EMITTER ON A CRYSTALLINE SILICON THIN FILM OR WAFER-BASED SOLAR CELL). OTHER APPLICATIONS INCLUDE FABRICATION OF MEMS SEPARATION AND SACRIFICIAL LAYERS FOR DIE DETACHMENT AND MEMS DEVICE FABRICATION, MEMBRANE FORMATION AND SHALLOW TRENCH ISOLATION (STI) POROUS SILICON (USING POROUS SILICON FORMATION WITH AN OPTIMAL POROSITY AND ITS SUBSEQUENT OXIDATION). FURTHER THE DISCLOSURE IS APPLICABLE TO THE GENERAL FIELDS OF PHOTOVOLTAICS, MEMS, INCLUDING SENSORS AND ACTUATORS, STAND-ALONE, OR INTEGRATED WITH INTEGRATED SEMICONDUCTOR MICROELECTRONICS, SEMICONDUCTOR MICROELECTRONICS CHIPS AND OPTOELECTRONICS.

公开(公告)号：AU2015210451B2

公开(公告)日：2017-08-10

申请号：AU2015210451

申请日：2015-08-07

Applicant: SOLEXEL INC

Inventor： KRAMER KARL-JOSEF ,  ASHJAEE JAY ,  MOSLEHI MEHRDAD M ,  CALCATERRA ANTHONY ,  DUTTON DAVID ,  KAPUR PAWAN ,  SEUTTER SEAN ,  FATEMI HOMI

IPC: H01L21/205 ,  H01L31/04

Abstract: Processing equipment for the metallization of a plurality of workpieces are provided. The equipment comprising a controlled atmospheric region isolated from external oxidizing ambient with at least one deposition zone for the application of a metal layer on a workpiece. A transport 5 system moves the workpiece positioned in a batch carrier plat through the controlled atmospheric region.