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    14.
    发明专利
    未知

    公开(公告)号：FR2905207B1

    公开(公告)日：2009-01-30

    申请号：FR0653487

    申请日：2006-08-28

    Applicant: ST MICROELECTRONICS SA

    Inventor： VOLATIER ALEXANDRE ,  ANCEY PASCAL ,  DUBUS BERTRAND

    IPC: H03H9/58

    Abstract: The filter (100) has an acoustic resonator (108) comprising a resonant layer (110) that is placed between electrodes (112, 114). An acoustic resonator (118) comprises a resonant layer (120) that is placed between electrodes (122, 124), where the resonator (118) is acoustically coupled with the resonator (108). One of the electrodes (114, 122) is placed between the layers (110, 120), where the layers are made of an electrostrictive material. An acoustic insulation unit (104) is provided such that the resonator (108) is placed between the resonator (118) and the unit (104). An independent claim is also included for a signal transmission and/or reception device comprising an antenna connected to a switchable filter.

    15.
    发明专利
    未知

    公开(公告)号：DE602005001245T2

    公开(公告)日：2008-01-24

    申请号：DE602005001245

    申请日：2005-09-15

    Applicant: ST MICROELECTRONICS SA ,  COMMISSARIAT ENERGIE ATOMIQUE

    Inventor： ANCEY PASCAL ,  ABELE NICOLAS ,  CASSET FABRICE

    IPC: B81B7/02 ,  B81B3/00 ,  B81C1/00

    Abstract: A MOS transistor with a deformable gate formed in a semiconductor substrate (10), comprises : (A) some source and drain zones (11, 12) separated by a channel zone (13) extending in a first direction from the source to the drain and in a second direction perpendicular to the first direction; (B) a conducting gate beam (16) placed at least above the channel zone extending in the second direction between some support points placed on the substrate at each side of the channel zone. The surface of the channel zone is hollow and has a form similar to that of the gate beam when it is in maximum deflection towards the channel zone. Independent claims are also included for : (A) a circuit oscillator incorporating this transistor; (B) the fabrication of this transistor with a deformable gate.

    17.
    发明专利
    未知

    公开(公告)号：FR2875339B1

    公开(公告)日：2006-12-08

    申请号：FR0452070

    申请日：2004-09-16

    Applicant: ST MICROELECTRONICS SA ,  COMMISSARIAT ENERGIE ATOMIQUE

    Inventor： ANCEY PASCAL ,  ABELE NICOLAS ,  CASSET FABRICE

    IPC: H01L29/94 ,  B81B3/00 ,  B81B7/02 ,  B81C1/00 ,  H01L29/84

    Abstract: A MOS transistor with a deformable gate formed in a semiconductor substrate (10), comprises : (A) some source and drain zones (11, 12) separated by a channel zone (13) extending in a first direction from the source to the drain and in a second direction perpendicular to the first direction; (B) a conducting gate beam (16) placed at least above the channel zone extending in the second direction between some support points placed on the substrate at each side of the channel zone. The surface of the channel zone is hollow and has a form similar to that of the gate beam when it is in maximum deflection towards the channel zone. Independent claims are also included for : (A) a circuit oscillator incorporating this transistor; (B) the fabrication of this transistor with a deformable gate.

    19.
    发明专利
    未知

    公开(公告)号：FR2848339B1

    公开(公告)日：2005-08-26

    申请号：FR0215370

    申请日：2002-12-05

    Applicant: ST MICROELECTRONICS SA

    Inventor： BOUCHE GUILLAUME ,  ANCEY PASCAL ,  FROMENT BENOIT

    IPC: B81B7/00 ,  H01S5/022 ,  H01L23/31 ,  B81C3/00

    Abstract: The adhesion of a first element (1), of which at least a part of the surface is coated with silicon, on a second element (2), of which at least a part of the surface is coated with nickel, incorporates an adhesion stage effected by NiSi welding at greater than 250degreesC, the rugosity between the two parts of the surface of the two elements being less than 1 micron. An Independent claim is also included for an integrated circuit incorporating two elements joined by NiSi welding.

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