中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

40 records (took 0.031 seconds)

    METHOD OF MANUFACTURING RESONANT TRANSDUCER
    11.
    发明申请
    METHOD OF MANUFACTURING RESONANT TRANSDUCER 有权
    制造谐振传感器的方法

    公开(公告)号：US20130139377A1

    公开(公告)日：2013-06-06

    申请号：US13689199

    申请日：2012-11-29

    Applicant: YOKOGAWA ELECTRIC CORPORATION

    Inventor： Ryuichiro NODA ,  Takashi YOSHIDA

    IPC: H04R31/00

    CPC classification number: H04R31/00 ,  B81B2201/0271 ,  B81C1/0015 ,  B81C1/00666 ,  B81C2201/0164 ,  B81C2201/0173 ,  H03H3/0072 ,  Y10T29/49005

    Abstract: A method of manufacturing a resonant transducer having a vibration beam includes: (a) providing an SOI substrate including: a first silicon layer; a silicon oxide layer on the first silicon layer; and a second silicon layer on the silicon oxide layer; (b) forming a first gap and second gap through the second silicon layer by etching the second silicon layer using the silicon oxide layer as an etching stop layer; (c) forming an impurity diffusion source layer on the second silicon layer; (d) forming an impurity diffused layer in a surface portion of the second silicon layer; (e) removing the impurity diffusion source layer through etching; and (f) removing at least a portion of the silicon oxide layer through etching such that an air gap is formed between the first silicon layer and a region of the second silicon layer surrounded by the first and second gaps.

    Abstract translation: 一种制造具有振动束的谐振换能器的方法包括：（a）提供SOI衬底，包括：第一硅层; 第一硅层上的氧化硅层; 和在氧化硅层上的第二硅层; （b）通过使用氧化硅层作为蚀刻停止层蚀刻第二硅层，形成通过第二硅层的第一间隙和第二间隙; （c）在第二硅层上形成杂质扩散源层; （d）在第二硅层的表面部分形成杂质扩散层; （e）通过蚀刻去除杂质扩散源层; 以及（f）通过蚀刻去除所述氧化硅层的至少一部分，使得在所述第一硅层和由所述第一和第二间隙包围的所述第二硅层的区域之间形成气隙。

    Methods for Nanostructure Doping
    12.
    发明申请
    Methods for Nanostructure Doping 审中-公开
    纳米结构掺杂方法

    公开(公告)号：US20100167512A1

    公开(公告)日：2010-07-01

    申请号：US12720125

    申请日：2010-03-09

    Applicant: Yaoling Pan ,  Jian Chen ,  Francisco Leon ,  Shahriar Mostarshed ,  Linda T. Romano ,  Vijendra Sahi ,  David P. Stumbo

    Inventor： Yaoling Pan ,  Jian Chen ,  Francisco Leon ,  Shahriar Mostarshed ,  Linda T. Romano ,  Vijendra Sahi ,  David P. Stumbo

    IPC: H01L21/22

    CPC classification number: H01L29/0665 ,  B81C1/00698 ,  B81C2201/0173 ,  B82Y10/00 ,  H01L21/2256 ,  H01L21/268 ,  H01L29/0673

    Abstract: Methods of doping nanostructures, such as nanowires, are disclosed. The methods provide a variety of approaches for improving existing methods of doping nanostructures. The embodiments include the use of a sacrificial layer to promote uniform dopant distribution within a nanostructure during post-nanostructure synthesis doping. In another embodiment, a high temperature environment is used to anneal nanostructure damage when high energy ion implantation is used. In another embodiment rapid thermal annealing is used to drive dopants from a dopant layer on a nanostructure into the nanostructure. In another embodiment a method for doping nanowires on a plastic substrate is provided that includes depositing a dielectric stack on a plastic substrate to protect the plastic substrate from damage during the doping process. An embodiment is also provided that includes selectively using high concentrations of dopant materials at various times in synthesizing nanostructures to realize novel crystallographic structures within the resulting nanostructure.

    Abstract translation: 公开了掺杂纳米结构的方法，例如纳米线。 该方法提供了改进现有掺杂纳米结构方法的各种方法。 这些实施方案包括在后纳米结构合成掺杂期间使用牺牲层来促进纳米结构内的均匀掺杂剂分布。 在另一个实施例中，当使用高能离子注入时，使用高温环境退火纳米结构损伤。 在另一个实施方案中，使用快速热退火来将掺杂剂从纳米结构上的掺杂剂层驱动到纳米结构中。 在另一个实施例中，提供了一种在塑料衬底上掺杂纳米线的方法，其包括在塑料衬底上沉积电介质叠层以保护塑料衬底免于在掺杂过程期间损坏。 还提供了一种实施方案，其包括在合成纳米结构中在不同时间选择性地使用高浓度的掺杂剂材料以在所得纳米结构内实现新的晶体结构。

    Electrostatic drive type mems element, manufacturing method thereof, optical mems element, optical modulation element, glv device, and laser display
    13.
    发明申请
    Electrostatic drive type mems element, manufacturing method thereof, optical mems element, optical modulation element, glv device, and laser display 失效
    静电驱动型元件，其制造方法，光学元件元件，光调制元件，glv器件和激光显示器

    公开(公告)号：US20040076008A1

    公开(公告)日：2004-04-22

    申请号：US10468873

    申请日：2003-08-25

    Inventor： Koichi Ikeda

    IPC: F21K002/00

    CPC classification number: B81C1/0015 ,  B81B2201/045 ,  B81B2203/04 ,  B81C2201/0109 ,  B81C2201/0173 ,  B81C2203/0109 ,  G02B26/0841

    Abstract: The present invention provides an electrostatic drive type MEMS device and a manufacturing method thereof, in which flattening the surface of a driving side electrode, improving performance, and further the improvements of the degree of freedom of designing in the manufacturing process are implemented. In addition, the present invention provides a GLV device using this MEMS device, and further a laser display using this GLV device. In the present invention an electrostatic drive type MEMS device includes a substrate side electrode and a beam having a driving side electrode driven by electrostatic attraction force or electrostatic repulsion force that acts between the substrate side electrode and driving side electrode, in which the substrate side electrode is formed of an impurities-doped conductive semiconductor region in a semiconductor substrate.

    Abstract translation: 本发明提供了一种静电驱动型MEMS器件及其制造方法，其中使驱动侧电极的表面变平，提高性能，并进一步提高制造工艺中的设计自由度。 此外，本发明提供了一种使用该MEMS器件的GLV器件，还提供了使用该GLV器件的激光显示器。 在本发明中，静电驱动型MEMS器件包括基板侧电极和具有由基板侧电极和驱动侧电极之间作用的静电吸引力或静电排斥力驱动的驱动侧电极的光束，其中基板侧电极 由半导体衬底中的杂质掺杂导电半导体区形成。

    METHODS FOR NANOSTRUCTURE DOPING
    14.
    发明公开
    METHODS FOR NANOSTRUCTURE DOPING 审中-公开
    法制备纳米结构资金

    公开(公告)号：EP1938381A2

    公开(公告)日：2008-07-02

    申请号：EP06803951.0

    申请日：2006-09-21

    Applicant: Nanosys, Inc.

    Inventor： PAN, Yaoling ,  CHEN, Jian ,  LEON, Francisco ,  MOSTARSHED, Shahriar ,  ROMANO, Linda T. ,  SAHI, Vijendra ,  STUMBO, David P.

    IPC: H01L29/06 ,  H01L21/225

    CPC classification number: H01L29/0665 ,  B81C1/00698 ,  B81C2201/0173 ,  B82Y10/00 ,  H01L21/2256 ,  H01L21/268 ,  H01L29/0673

    Abstract: Methods of doping nanostructures, such as nanowires, are disclosed. The methods provide a variety of approaches for improving existing methods of doping nanostructures. The embodiments include the use of a sacrificial layer to promote uniform dopant distribution within a nanostructure during post-nanostructure synthesis doping. In another embodiment, a high temperature environment is used to anneal nanostructure damage when high energy ion implantation is used. In another embodiment rapid thermal annealing is used to drive dopants from a dopant layer on a nanostructure into the nanostructure. In another embodiment a method for doping nanowires on a plastic substrate is provided that includes depositing a dielectric stack on a plastic substrate to protect the plastic substrate from damage during the doping process. An embodiment is also provided that includes selectively using high concentrations of dopant materials at various times in synthesizing nanostructures to realize novel crystallographic structures within the resulting nanostructure.

    Method of manufacturing resonant transducer
    16.
    发明公开
    Method of manufacturing resonant transducer 有权
    一种用于制造谐振转换器处理

    公开(公告)号：EP2599747A3

    公开(公告)日：2014-10-15

    申请号：EP12195311.1

    申请日：2012-12-03

    Applicant: Yokogawa Electric Corporation

    Inventor： Noda, Ryuichiro ,  Yoshida, Takashi

    IPC: B81C1/00 ,  H03H3/007 ,  H04R31/00

    CPC classification number: H04R31/00 ,  B81B2201/0271 ,  B81C1/0015 ,  B81C1/00666 ,  B81C2201/0164 ,  B81C2201/0173 ,  H03H3/0072 ,  Y10T29/49005

    Abstract: A method of manufacturing a resonant transducer having a vibration beam includes: (a) providing an SOI substrate including: a first silicon layer; a silicon oxide layer on the first silicon layer; and a second silicon layer on the silicon oxide layer; (b) forming a first gap and second gap through the second silicon layer by etching the second silicon layer using the silicon oxide layer as an etching stop layer; (c) forming an impurity diffusion source layer on the second silicon layer; (d) forming an impurity diffused layer in a surface portion of the second silicon layer; (e) removing the impurity diffusion source layer through etching; and (f) removing at least a portion of the silicon oxide layer through etching such that an air gap is formed between the first silicon layer and a region of the second silicon layer surrounded by the first and second gaps.

    ELECTROSTATIC DRIVE MEMS ELEMENT, MANUFACTURING METHOD THEREOF, OPTICAL MEMS ELEMENT, OPTICAL MODULATION ELEMENT, GLV DEVICE, AND LASER DISPLAY
    17.
    发明公开
    ELECTROSTATIC DRIVE MEMS ELEMENT, MANUFACTURING METHOD THEREOF, OPTICAL MEMS ELEMENT, OPTICAL MODULATION ELEMENT, GLV DEVICE, AND LASER DISPLAY 审中-公开
    静电驱动MEMS元件，工艺制作，光学MEMS元件，光调制元件，GLV设备和激光显示

    公开(公告)号：EP1460035A1

    公开(公告)日：2004-09-22

    申请号：EP02805882.4

    申请日：2002-12-16

    Applicant: Sony Corporation

    Inventor： IKEDA, Koichi, Sony Corporation

    IPC: B81B3/00 ,  B81C1/00 ,  G02B26/02 ,  G02B5/18

    CPC classification number: B81C1/0015 ,  B81B2201/045 ,  B81B2203/04 ,  B81C2201/0109 ,  B81C2201/0173 ,  B81C2203/0109 ,  G02B26/0841

    Abstract: The present invention provides an electrostatic drive type MEMS device and a manufacturing method thereof, in which flattening the surface of a driving side electrode, improving performance, and further the improvements of the degree of freedom of designing in the manufacturing process are implemented. In addition, the present invention provides a GLV device using this MEMS device, and further a laser display using this GLV device.
    In the present invention an electrostatic drive type MEMS device includes a substrate side electrode and a beam having a driving side electrode driven by electrostatic attraction force or electrostatic repulsion force that acts between the substrate side electrode and driving side electrode, in which the substrate side electrode is formed of an impurities-doped conductive semiconductor region in a semiconductor substrate.

    Abstract translation: 本发明提供了对静电驱动型MEMS器件及其制造方法，其中，展平的驱动侧电极的表面上，提高性能，并进一步在制造过程的设计来实现的自由度的改进。 此外，本发明提供使用此MEMS器件的GLV装置，以及使用该GLV装置还激光显示器。 在本发明中，以静电驱动型MEMS器件包括基板侧电极和具有由静电引力或静电斥力驱动的驱动侧电极的光束做了基板侧电极和驱动侧电极，在它们之间作用 基板侧电极中的半导体的导电性基板上形成杂质掺杂的半导体区域构成。

    Method of manufacturing resonant transducer
    19.
    发明授权
    Method of manufacturing resonant transducer 有权
    制造谐振换能器的方法

    公开(公告)号：US09084067B2

    公开(公告)日：2015-07-14

    申请号：US13689199

    申请日：2012-11-29

    Applicant: Yokogawa Electric Corporation

    Inventor： Ryuichiro Noda ,  Takashi Yoshida

    IPC: H01L41/22 ,  H04R31/00 ,  B81C1/00 ,  H03H3/007

    CPC classification number: H04R31/00 ,  B81B2201/0271 ,  B81C1/0015 ,  B81C1/00666 ,  B81C2201/0164 ,  B81C2201/0173 ,  H03H3/0072 ,  Y10T29/49005

    Abstract: A method of manufacturing a resonant transducer having a vibration beam includes: (a) providing an SOI substrate including: a first silicon layer; a silicon oxide layer on the first silicon layer; and a second silicon layer on the silicon oxide layer; (b) forming a first gap and second gap through the second silicon layer by etching the second silicon layer using the silicon oxide layer as an etching stop layer; (c) forming an impurity diffusion source layer on the second silicon layer; (d) forming an impurity diffused layer in a surface portion of the second silicon layer; (e) removing the impurity diffusion source layer through etching; and (f) removing at least a portion of the silicon oxide layer through etching such that an air gap is formed between the first silicon layer and a region of the second silicon layer surrounded by the first and second gaps.

    Abstract translation: 一种制造具有振动束的谐振换能器的方法包括：（a）提供SOI衬底，包括：第一硅层; 第一硅层上的氧化硅层; 和在氧化硅层上的第二硅层; （b）通过使用氧化硅层作为蚀刻停止层蚀刻第二硅层，形成通过第二硅层的第一间隙和第二间隙; （c）在第二硅层上形成杂质扩散源层; （d）在第二硅层的表面部分形成杂质扩散层; （e）通过蚀刻去除杂质扩散源层; 以及（f）通过蚀刻去除所述氧化硅层的至少一部分，使得在所述第一硅层和由所述第一和第二间隙包围的所述第二硅层的区域之间形成气隙。

Patent Agency Ranking