公开(公告)号：EP2828707A2

公开(公告)日：2015-01-28

申请号：EP13720583.7

申请日：2013-03-14

Applicant: Koninklijke Philips N.V.

Inventor： VAN DER ZAAG, Pieter, Jan ,  PEETERS, Emiel ,  KOOLE, Roelof ,  VAN DELFT, Falco, Cornelius, Marinus, Jacobus, Maria

IPC: G03F7/00 ,  B82Y15/00 ,  G01N33/487

CPC classification number: G01N33/48721 ,  B81C1/00087 ,  B81C2201/0149 ,  B82Y30/00 ,  G03F7/0002

Abstract: The invention relates to a method for manufacturing an apparatus for the processing of single molecules. According to this method, a self-assembling resist (155) is deposited on a processing layer (110, PL) and allowed to self-assemble into a pattern of two phases (155a, 155b). One of these phases (155a) is then selectively removed, and at least one aperture is generated in the processing layer (110, PL) through the mask of the remaining resist (155b). Thus apertures of small size can readily be produced that allow for the processing of single molecules (M), for example in DNA sequencing.

公开(公告)号：EP2250123A4

公开(公告)日：2014-10-15

申请号：EP09709244

申请日：2009-02-03

Applicant: IBM

Inventor： BLACK CHARLES T ,  DALTON TIMOTHY J ,  DORIS BRUCE B ,  RADENS CARL

IPC: B82B3/00 ,  B81C1/00

CPC classification number: H01L21/0338 ,  B81B2203/0369 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  H01L21/0337 ,  H01L51/0017 ,  Y10S977/882 ,  Y10S977/887 ,  Y10S977/888 ,  Y10T428/24479 ,  Y10T428/2457 ,  Y10T428/24612 ,  Y10T428/24736 ,  Y10T428/24802

公开(公告)号：EP2003091A4

公开(公告)日：2014-04-16

申请号：EP07741001

申请日：2007-04-04

Applicant: JAPAN SCIENCE & TECH AGENCY

Inventor： WATANABE SHIGERU ,  LI JINGZE

IPC: B81C1/00 ,  B82Y30/00 ,  B82Y40/00

CPC classification number: B82Y30/00 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y20/00 ,  B82Y40/00

公开(公告)号：EP2715782A1

公开(公告)日：2014-04-09

申请号：EP12721321.3

申请日：2012-05-18

Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives ,  CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE

Inventor： TIRON, Raluca ,  GAUGIRAN, Stéphanie ,  CHEVALIER, Xavier ,  TEDESCO, Serge

IPC: H01L21/027 ,  B82Y10/00 ,  B81C1/00

CPC classification number: B05D5/00 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0159 ,  H01L21/0273 ,  H01L21/0337

Abstract: The invention relates to a method for making patterns on the surface of a substrate by graphoepitaxy, comprising the following steps: a step of depositing a layer of resin on the surface of the substrate; a step of making patterns in the resin on the surface of a substrate; a step of curing the patterns in the resin by producing a layer of amorphous carbon on the surface of the patterns in the resin; a step of depositing a layer of statistical copolymer after the step of curing the patterns in the resin; a step of grafting the layer of statistical copolymer onto the patterns in the resin by annealing; and a step of depositing a layer of a block copolymer into the spaces defined by the patterns in the resin after the step of curing the patterns and the grafting of the layer of statistical copolymer.

公开(公告)号：EP2235743A4

公开(公告)日：2013-03-20

申请号：EP09704665

申请日：2009-01-15

Applicant: IBM

Inventor： DALTON TIMOTHY ,  DORIS BRUCE B ,  KIM HO-CHEOL ,  RADENS CARL

IPC: H01L21/033 ,  B81C1/00

CPC classification number: H01L21/0337 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/0338 ,  Y10T428/24612

公开(公告)号：EP2276690B1

公开(公告)日：2012-09-19

申请号：EP09739437.3

申请日：2009-04-20

Applicant: Micron Technology, Inc.

Inventor： MILLWARD, Dan, B. ,  WESTMORELAND, Donald

IPC: B81C1/00

CPC classification number: H01L29/0657 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  G03F7/0002 ,  H01L21/02118 ,  H01L21/0223 ,  H01L29/06 ,  Y10S438/947 ,  Y10S977/888 ,  Y10S977/895 ,  Y10S977/90 ,  Y10T428/24182 ,  Y10T428/24521 ,  Y10T428/2462 ,  Y10T428/249921

公开(公告)号：EP1827717A4

公开(公告)日：2011-11-23

申请号：EP05857837

申请日：2005-11-22

Applicant: WISCONSIN ALUMNI RES FOUND

Inventor： NEALEY PAUL F ,  KIM SANGOUK ,  EDWARDS ERIK W ,  STOYKOVICH MARK P ,  DE PABLO JUAN J

IPC: B81C1/00 ,  G03F7/40

CPC classification number: G03F7/40 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00 ,  G03F7/265

公开(公告)号：EP2379441A2

公开(公告)日：2011-10-26

申请号：EP10715538.4

申请日：2010-04-23

Applicant: International Business Machines Corporation

Inventor： CHENG, Joy ,  NA, Young-Hye ,  LAI, Kafai ,  RETTNER, Charles, Thomas ,  SANDERS, Daniel, Paul ,  LI, Wai-Kin

IPC: B81C1/00

CPC classification number: B81C1/00031 ,  B81C1/00404 ,  B81C2201/0149 ,  H01L21/0337 ,  H01L21/31144

Abstract: An opening in a substrate is formed, e.g., using optical lithography, with the opening having sidewalls whose cross section is given by segments that are contoured and convex. The cross section of the opening may be given by overlapping circular regions, for example. The sidewalls adjoin at various points, where they define protrusions. A layer of polymer including a block copolymer is applied over the opening and the substrate, and allowed to self-assemble. Discrete, segregated domains form in the opening, which are removed to form holes, which can be transferred into the underlying substrate. The positions of these domains and their corresponding holes are directed to predetermined positions by the sidewalls and their associated protrusions. The distances separating these holes may be greater or less than what they would be if the block copolymer (and any additives) were to self-assemble in the absence of any sidewalls.

公开(公告)号：EP2262721A2

公开(公告)日：2010-12-22

申请号：EP09711291.6

申请日：2009-01-27

Applicant: Micron Technology, INC.

Inventor： MILLWARD, Dan, B. ,  STUEN, Karl

IPC: B81C1/00

CPC classification number: H01L21/0337 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00 ,  G03F7/0002 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/76816 ,  Y10S977/778 ,  Y10S977/784 ,  Y10S977/789 ,  Y10S977/79 ,  Y10T428/24058 ,  Y10T428/24124 ,  Y10T428/24174 ,  Y10T428/24182

Abstract: Methods for fabricating sublithographic, nanoscalc microstructures in one-dimensional arrays utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

Abstract translation: 提供了利用自组装嵌段共聚物在一维阵列中制造亚光刻纳米晶微结构的方法，以及由这些方法形成的膜和器件。

公开(公告)号：EP2250123A2

公开(公告)日：2010-11-17

申请号：EP09709244.9

申请日：2009-02-03

Applicant: International Business Machines Corporation

Inventor： BLACK, Charles, T. ,  DALTON, Timothy, J. ,  DORIS, Bruce, B. ,  RADENS, Carl

IPC: B82B3/00

CPC classification number: H01L21/0338 ,  B81B2203/0369 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  H01L21/0337 ,  H01L51/0017 ,  Y10S977/882 ,  Y10S977/887 ,  Y10S977/888 ,  Y10T428/24479 ,  Y10T428/2457 ,  Y10T428/24612 ,  Y10T428/24736 ,  Y10T428/24802

Abstract: In one embodiment, hexagonal tiles encompassing a large are divided into three groups, each containing one-third of all hexagonal tiles that are disjoined among one another. Openings for the hexagonal tiles in each group (01, 02, 03) are formed in a template layer (2OA, 2OB, 20C), and a set of self-assembling block copolymers is applied and patterned within each opening. This process is repeated three times to encompass all three groups, resulting in a self-aligned pattern extending over a wide area. In another embodiment, the large area is divided into rectangular tiles of two non-overlapping and complementary groups. Each rectangular area has a width less than the range of order of self-assembling block copolymers. Self-assembled self- aligned line and space structures (4OA, 5OA; 4OB, 5OB; 4OC, 50C) are formed in each group in a sequential manner so that a line and space pattern is formed over a large area extending beyond the range of order.