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公开(公告)号：JP2849357B2
公开(公告)日：1999-01-20
申请号：JP33550695
申请日：1995-12-22
Applicant: KOREA TELECOMMUNICATION , KOREA ELECTRONICS TELECOMM
Inventor： I SUN HI
IPC: H04Q3/00 , H04L12/24 , H04L12/70 , H04L12/801 , H04L12/835 , H04L12/841 , H04L12/911 , H04L12/923 , H04Q11/04 , H04L12/28
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公开(公告)号：JPH10206744A
公开(公告)日：1998-08-07
申请号：JP109398
申请日：1998-01-06
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： SO SEKIKO
Abstract: PROBLEM TO BE SOLVED: To make a microscope stable and compact in scale and to enable integration with precise exactness in arrangement by constituting the microscope into plate micro-optical system. SOLUTION: Input irradiation light 18 is made incident on a glass substrate 20 by a grating coupler 19, moved forward successively through a phase object 11, 1st lens 15, phase plate 12, 2nd lens 16 and output plane 13 and deflected perpendicular to the glass substrate 20 by the grating coupler forming the output plane 13. Such output light is measured as light intensity distribution by a 3rd lens 17 and a camera 14. The 1st and 2nd lenses 15 and 16 and the phase plate 12 can use general lenses and a general phase plate formable on a flat substrate 21. When measuring the arbitrary phase object 11, the phase object 11 is placed at the position of input object 11 (an area to arrange the phase object 11). Thus, it can be measured by the camera 14 as the light intensity distribution of lightness/darkness.
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公开(公告)号：JPH10190153A
公开(公告)日：1998-07-21
申请号：JP20431897
申请日：1997-07-30
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： HAKU SOKYO , RI BAN
IPC: G02B5/08 , C23C14/54 , C23C16/52 , C30B29/40 , H01L21/205 , H01S5/00 , H01S5/028 , H01S5/183 , H01S5/187 , H01S3/18
Abstract: PROBLEM TO BE SOLVED: To provide a method by which a film having a desired thickness can be grown in real time by using a laser beam having the same wavelength as a Bragg reflection film has. SOLUTION: After a plurality of buffer layers are formed on a semiconductor substrate, first and second epitaxial layers are grown on the buffer layers. The growth of the first and second epitaxial layers is continuously measured by using a laser beam having the same wavelength as the reflection wavelength of a Bragg reflection film and the period until the layers grow to the thicknesses of 1/4 wavelength is decided. Since the thickness of the Bragg reflection film grown thereafter is controlled based on the decided growing period, the epitaxial layers can be grown uniformly.
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公开(公告)号：JPH10186168A
公开(公告)日：1998-07-14
申请号：JP22882997
申请日：1997-08-11
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： BEKU ZON HIYOPU , RI BON
Abstract: PROBLEM TO BE SOLVED: To make it possible to simplify production stages by forming an optical waveguide layer having a surface of continuous comb-shaped patterns having the function of diffraction gratings by an epitaxy method on a substrate. SOLUTION: The optical waveguide layer 12 having the surface of the comb- shaped patterns is formed by epitaxy of an epitaxial layer on a substrate 11. A material having the refractive index larger than the refractive index of the substrate 11 is selected for the optical waveguide layer 12. If the substrate 11 is formed of GaAs, the optical waveguide layer 12 is formed of InGaAs. The process for production to form the surface of the InGaAs epitaxial layer (optical waveguide layer 12) as the comb-shaped patterns is important. The epitaxy method is applied as a method for manufacturing the diffraction grating coupler required in the field of light transmission. The easy impartation of the function as a waveguide simultaneously with the growth of the optical waveguide layer 12 is made possible by omitting all the stages for forming the conventional diffraction gratings.
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公开(公告)号：JPH10178623A
公开(公告)日：1998-06-30
申请号：JP22799697
申请日：1997-08-25
Applicant: KOREA ELECTRONICS TELECOMM , KOREA TELECOMMUN
Inventor： KAN TOKI , SAI SOSEKI
IPC: H04N7/08 , H04H20/00 , H04H20/74 , H04H60/07 , H04H60/15 , H04H60/23 , H04L9/18 , H04L9/36 , H04N7/081 , H04N7/20 , H04H1/00
Abstract: PROBLEM TO BE SOLVED: To reduce costs to acquire stability and reliability by separately providing a circuit which makes a compressed data stream a system packet and a scrambling control circuit to the circuit in accordance with each channel of audio and video and later multiplexing it. SOLUTION: In a channel scrambling part 200, MPEG 2 system packet stream generating parts 210 and 240 generate a system packet for each channel of video and audio. Scramblers 230 and 260 scramble a payload part with a control word of each channel of video and audio as a key. For instance, on the video channel side, when the part 210, a scramble ON/OFF path controller 220, the scrambler 230 are formed in one module, the timing control of a circuit operation is simple and design is easy in each module.
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Patent Agency Ranking
公开(公告)号：JPH10150452A
公开(公告)日：1998-06-02
申请号：JP14413597
申请日：1997-06-02
Applicant: KOREA ELECTRONICS TELECOMM , KOREA TELECOMMUN AUTHORITY
Inventor： JOHNG-WOO KIM , YON-UKU CHA , KUYUUHO RI , JOHNG-AMU CHONG , IKU-KUYUN KIM
Abstract: PROBLEM TO BE SOLVED: To remove a flow cell through the use of a general flow control field existing in a header by transmitting/receiving a signal cell, retrieving the general flow control field against a maintenance cell and removing the floating cell. SOLUTION: The general flow control processing logic 31a of a processor part 31 inspects the general flow control field of the transmitted cell, generally processes the maintenance cell when it is the normal cell and abolishes it when it is the floating cell. Remote defect recognition cells and continuity inspection cells, which are generated from respective terminals, are treated in the same way as remote relay cells. The continuity inspection cell and the remote defect recognition cell among signal/meter signal cells, an inter-subscriber communication cell, remote relay cells and the maintenance cells between the subscriber and a network by a cell relay and an add/drop function part 32. A processing for a warning recognition signal cell and a system management cell in the maintenance cells is executed by an ATM hierarchy processing part 34 and the processor part 31.
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公开(公告)号：JPH10150207A
公开(公告)日：1998-06-02
申请号：JP30885097
申请日：1997-11-11
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： JIN-IEON KAN , JIN-GAN KUU , MYUN-SHIN KUWAKU
IPC: H01L27/12 , H01L27/06 , H01L29/786
Abstract: PROBLEM TO BE SOLVED: To make it possible to prevent the generation of a current short-circuit between a drift region and a source and the generation of a voltage breakdown in the junction between the drift region and a channel region by a method wherein a multitude of vertical gates are formed between the channel region and the drift region. SOLUTION: A first conductivity type drift region 203, a second conductivity type channel region 204 and second insulating films 207 encircling the peripheries of the regions 203 and 204 are formed on a first wafer 200 via a first insulating film 201. A high-concentration first conductivity type drain 213 is formed on the region 203, a high-concentration first conductivity type source 205 is formed on the region 204 and a high-concentration second conductivity type channel region coupling layer 212, which comes into contact with the side on one side of the sides of the source 205, is formed. Moreover, a multitude of vertical gate insulating films 208 and a multitude of vertical gate electrodes 209a are formed in contact with the other side of the source 205 and the regions 203 and 204. A horizontal gate insulating film 210 and a horizontal gate electrode 211 are formed on the upper parts of the electrodes 209a in such a way as to come into contact with the source 205 and the region 204.
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公开(公告)号：JPH10145428A
公开(公告)日：1998-05-29
申请号：JP22531397
申请日：1997-08-21
Applicant: KOREA ELECTRONICS TELECOMM , KOREA TELECOMMUN
Inventor： IN-TEKU HAN , KIISOKU CHE , KUON-CHORU PARK
Abstract: PROBLEM TO BE SOLVED: To prevent the stop of following D-channel packet exchange service by providing a packet processor in relaxed duplex structure based on a partial load charging system. SOLUTION: As for communication between 1st frame multiplexing/ demultiplexing processors (FMDC) 2200 -2203 and 1st frame multiplexing/ demultiplexing processor (FMDP) 230 and between 2nd FMDC 2500 -2503 and 2nd FMDP 240, by exchanging frame transmission/reception information through a mailbox constructed in a common memory, the half of traffic for respective D-channel packet exchanges is processed. When one link access procedure-for- balanced mode (LAPB) link is cut off, D channel frames are continuously transmitted/received through the remaining LAPB link without disconnecting any packet call and when all the LAPB links are cut off on any one side, duplexing is switched to the opposite side. Then, a duplexing function is executed so as to perform processing through that LAPB link.
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公开(公告)号：JPH10144910A
公开(公告)日：1998-05-29
申请号：JP23268697
申请日：1997-08-28
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： RO TOKAN , KIN KEIGYOKU
Abstract: PROBLEM TO BE SOLVED: To improve performances of a heterojunction hot electron device such as an increased current density and reduced transition time by introducing into its base layer an InAs layer with a V-shaped conduction band caused by a gradient composition, and by reducing the scattering phenomenon of electrons. SOLUTION: A hot electron device has a substrate 1 with a (100) lattice structure, a conductive collector layer 2 formed in a selected region on the substrate 1, a collector barrier layer 3 formed in a selected region on the collector layer 2, a conductive base layer 4 formed on the collector barrier layer 3, a buffer layer 5 formed in a selected region on the conductive base layer 4, an emitter barrier layer 6 formed on the buffer layer 5, and a conductive emitter layer 7 formed on the emitter barrier layer 6. The composition of the base layer 4 is varied so that it starts from the composition subjected to the lattice matching with the collector barrier layer 6, and the conduction band of the base layer 4 reaches a minimum value in the intermediate depth of the base layer 4.
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公开(公告)号：JPH10135483A
公开(公告)日：1998-05-22
申请号：JP26237997
申请日：1997-09-26
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： BOKU KYOKAN , RI SEISAI , SHIN MINTETSU
IPC: H01L29/06 , H01L21/335 , H01L29/66 , H01L29/772 , H01L29/80
Abstract: PROBLEM TO BE SOLVED: To realize multifunction, high-operation frequency and low-consumption power by bending the path of electrons between a source electrode and a drain electrode of a multifunctional quantum diffraction utilizing a two-dimensional electron gas quantum well structure. SOLUTION: A quantum diffraction transistor has such a constitution that an electron path between a source electrode 9B and a drain electrode 10B of a multifunctional quantum transistor using a quantum well structure of two dimensional electron gas formed in a semiconductor different type junction part such as an AlGaAs/GaAs layer is bent and the reflective diffraction grating 15 (one or a plurality) is inserted into the bent part. Thereby, advantages such as a multifunctional property with a large number of ON/OFF functions, high operation frequencies, low power consumption, further lower gate critical operation voltage, further higher transconductance and negative transconductance can be realized.
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