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公开(公告)号：KR1020050026018A
公开(公告)日：2005-03-14
申请号：KR1020057001481
申请日：2003-07-30
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/312 , H01L21/768
CPC classification number: H01J37/3222 , H01J2237/336 , H01L21/31058 , H01L21/3121
Abstract: A method for forming an insulating layer, which comprises irradiating a film containing a curable material provided on a substrate for an electronic device with a low energy plasma, to thereby cure said film containing a curable material. The method can be employed for forming an elctroconductive film having high quality, while preventing the application of an excessive thermal budget on the film.
Abstract translation: 一种用于形成绝缘层的方法，其包括用低能量等离子体照射含有设置在电子器件用基板上的可固化材料的膜，从而固化含有可固化材料的膜。 该方法可以用于形成具有高质量的导电膜，同时防止在膜上施加过多的热预算。
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公开(公告)号：KR1020040010220A
公开(公告)日：2004-01-31
申请号：KR1020030048603
申请日：2003-07-16
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H05H1/46
CPC classification number: H01J37/321
Abstract: PURPOSE: To provide a plasma processing apparatus that can highly efficiently generate high-density plasma, even when the device processes an object to be processed has a large area. CONSTITUTION: In this plasma processing apparatus, which generates plasma by supplying high-frequency power into a processing chamber and processes the object based on the plasma, a high-frequency antenna is arranged on the inside and on the outside of the processing chamber so as to surround the top board of the processing chamber. The top board can be constituted of a metal- or silicon-based material.
Abstract translation: 目的：为了提供能够高效率地生成高密度等离子体的等离子体处理装置，即使设备处理对象物的面积大。 构成：在该等离子体处理装置中，通过向处理室内供给高频电力并基于等离子体进行处理而产生等离子体，高频天线设置在处理室的内部和外部，以便 以围绕处理室的顶板。 顶板可以由金属或硅基材料构成。
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公开(公告)号：KR1020030004426A
公开(公告)日：2003-01-14
申请号：KR1020027015999
申请日：2002-03-28
Applicant: 도쿄엘렉트론가부시키가이샤 , 오미 다다히로
IPC: H01L21/02
CPC classification number: H01J37/3222 , H01J37/32192 , H01J37/3244
Abstract: 래디얼 라인 슬롯 안테나를 가지는 마이크로파 플라즈마 처리 장치에 있어서, 이상 방전을 억제하고, 마이크로파 플라즈마의 여기 효율을 향상시킨다. 래디얼 라인 슬롯 안테나와 동축 도파관의 접속부에 있어서, 동축 도파관 내의 급전선의 선단부를 방사면을 구성하는 슬롯판로부터 떨어지게 한다.
Abstract translation: 在使用径向线缝隙天线的微波等离子体处理装置中，抑制了异常放电，同时提高了微波等离子体的激发效率。 在径向线缝隙天线和同轴波导之间的接头中，同轴波导的供电线路的点部分与构成辐射面的缝隙板分离。 ＆lt;图像＆GT;
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公开(公告)号：KR100283853B1
公开(公告)日：2001-02-15
申请号：KR1020000025795
申请日：2000-05-15
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/302
Abstract: LCD기판 상에 실리콘막을 형성하는 플라즈마 CVD장치는 석영제의 칸막이판에 의해 처리실과 상부실로 구획된 콘테이너를 구비한다. 처리실 내에는 기판을 얹어놓기 위한 재치대가 설치되고, 재치대에는 고주파 전위가 인가되는 하부전극이 내장된다. 칸막이판과 재치대의 사이에는 아래쪽의 제 1 공급헤드와 위쪽의 제 2 공급헤드가 설치된다. 제 1 및 제 2 공급헤드에서는 각각 SiH
4 가스와 He가스가 공급된다. He가스는 플라즈마로 변화되고, SiH
4 가스가 플라즈마에 의해 여기되어 분해된다. 상부실 내에는 He가스의 플라즈마에서의 변화를 촉진하는 전자계를 형성하기 때문에, 고주파 전압이 인가되는 2개의 코일이 설치된다. 2개의 코일에 인가되는 고주파 전압은 동일 위상으로 2개의 인접하는 부분에서 전류의 방향이 일치한다.-
公开(公告)号：KR1020100075816A
公开(公告)日：2010-07-05
申请号：KR1020100059596
申请日：2010-06-23
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , H01L21/3065
CPC classification number: C23C16/4408 , C23C16/4412 , C23C16/45561 , C23C16/45565 , C23C16/4558 , C23C16/511 , H01J37/32192 , H01J37/3244 , H01J37/32834 , H01J2237/022 , H01L21/3145 , H01L21/3185
Abstract: PURPOSE: A plasma processing method is provided to process a high quality plasma to a target by removing impurity from a gas inlet of a process chamber. CONSTITUTION: A substrate(W) is prepared. The substrate comprises a silicon oxide film. The plasma is generated by supplying nitrogen gas to a silicon oxide film. The silicon oxide film is nitrified with the plasma in order to change the top of the silicon oxide film to the silicon nitride film.
Abstract translation: 目的：提供等离子体处理方法，通过从处理室的气体入口去除杂质来处理高质量的等离子体到靶。 构成：制备基材（W）。 衬底包括氧化硅膜。 通过向氧化硅膜供给氮气而产生等离子体。 为了将氧化硅膜的顶部改变为氮化硅膜，氧化硅膜被等离子体硝化。
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Patent Agency Ranking
公开(公告)号：KR1020090055540A
公开(公告)日：2009-06-02
申请号：KR1020090040832
申请日：2009-05-11
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , H01L21/3065
CPC classification number: C23C16/4408 , C23C16/4412 , C23C16/45561 , C23C16/45565 , C23C16/4558 , C23C16/511 , H01J37/32192 , H01J37/3244 , H01J37/32834 , H01J2237/022 , H01L21/3145 , H01L21/3185
Abstract: A plasma processing method is provided to perform a high quality plasma process in an object by removing impurity from a gas inlet part of a process chamber. A plasma processing apparatus(100) performs a high quality plasma process in an object by removing impurity from a gas inlet part of a process chamber(102). The gas inlet part is connected to the process chamber. A reaction gas flows to the process chamber. A first vacuum pump(152) is connected to the process chamber in order to exhaust the process chamber. An exhaust device is connected to the gas inlet part in order to exhaust the reaction gas from the gas inlet part. The exhaust device includes a second vacuum pump(154) which connects the gas inlet part to the first vacuum pump.
Abstract translation: 提供了一种等离子体处理方法，通过从处理室的气体入口部分去除杂质来在物体中进行高质量的等离子体处理。 等离子体处理装置（100）通过从处理室（102）的气体入口部分去除杂质来执行物体中的高质量等离子体处理。 气体入口部分连接到处理室。 反应气体流到处理室。 第一真空泵（152）连接到处理室以便排出处理室。 排气装置连接到气体入口部分，以从气体入口部排出反应气体。 排气装置包括将气体入口部分连接到第一真空泵的第二真空泵（154）。
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公开(公告)号：KR100738767B1
公开(公告)日：2007-07-12
申请号：KR1020010014799
申请日：2001-03-22
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/20
CPC classification number: C23C16/4408 , C23C16/4412 , C23C16/45561 , C23C16/45565 , C23C16/4558 , C23C16/511 , H01J37/32192 , H01J37/3244 , H01J37/32834 , H01J2237/022 , H01L21/3145 , H01L21/3185
Abstract: A plasma processing apparatus can apply a high-quality process to an object to be processed by removing impurities from a gas-introducing part of a process chamber. The gas-introducing part connected to the process chamber so as to introduce a reactant gas into the process chamber. A first vacuum pump is connected to the process chamber so as to evacuate gas from the process chamber so that the process chamber is maintained at a negative pressure. A gas-evacuating arrangement is connected to the gas-introducing part so as to exclusively evacuate the reactant gas from the gas-introducing part. The gas-evacuating arrangement includes a second vacuum pump directly connected to the gas introducing part or a bypass passage connecting the gas-introducing par to the first vacuum pump by bypassing the process chamber.
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公开(公告)号：KR100701359B1
公开(公告)日：2007-03-28
申请号：KR1020057001481
申请日：2003-07-30
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/312 , H01L21/768
CPC classification number: H01J37/3222 , H01J2237/336 , H01L21/31058 , H01L21/3121
Abstract: 전자 디바이스용 기재상에 배치된 경화성 재료 함유막에 대하여, 저에너지 플라즈마를 조사하여, 해당 경화성 재료 함유막을 경화시킨다. 과도한 열이력이 가해지는 것을 방지하면서, 또한 양질인 절연막을 부여할 수 있는 절연막의 형성 방법이 제공된다.
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公开(公告)号：KR1020070032743A
公开(公告)日：2007-03-22
申请号：KR1020070010118
申请日：2007-01-31
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/20 , H01L21/205 , H01L21/3065
CPC classification number: C23C16/4408 , C23C16/4412 , C23C16/45561 , C23C16/45565 , C23C16/4558 , C23C16/511 , H01J37/32192 , H01J37/3244 , H01J37/32834 , H01J2237/022 , H01L21/3145 , H01L21/3185
Abstract: A plasma processing apparatus can apply a high-quality process to an object to be processed by removing impurities from a gas-introducing part of a process chamber. The gas-introducing part connected to the process chamber so as to introduce a reactant gas into the process chamber. A first vacuum pump is connected to the process chamber so as to evacuate gas from the process chamber so that the process chamber is maintained at a negative pressure. A gas-evacuating arrangement is connected to the gas-introducing part so as to exclusively evacuate the reactant gas from the gas-introducing part. The gas-evacuating arrangement includes a second vacuum pump directly connected to the gas introducing part or a bypass passage connecting the gas-introducing par to the first vacuum pump by bypassing the process chamber.
Abstract translation: 等离子体处理装置可以通过从处理室的气体引入部分去除杂质来将高质量处理应用于待处理对象。 连接到处理室的气体引入部分将反应气体引入处理室。 第一真空泵连接到处理室以从处理室排出气体，使得处理室保持负压。 抽气装置连接到气体引入部分，以便专门地从气体引入部分抽空反应物气体。 抽气装置包括直接连接到气体引入部件的第二真空泵或旁路通道，旁路通道绕过处理室将气体引入部件连接到第一真空泵。
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公开(公告)号：KR100565129B1
公开(公告)日：2006-03-30
申请号：KR1020030048690
申请日：2003-07-16
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H05H1/30
CPC classification number: H01J37/3222 , H01J37/32192
Abstract: 본 발명은 처리실에 마이크로파를 공급하여 플라즈마를 발생시키고 그 플라즈마로 피처리 물체를 처리하는 플라즈마 처리 장치에 관한 것이다. 이 플라즈마 처리 장치에서, 상기 처리실은 플라즈마 발생 영역의 매체를 매개로 하여 피처리 물체에 대향하게 배치되는 상판을 구비하고; 상기 상판에는 상판을 관통하여 처리실 내부로 들어가도록 배치된 하나 이상의 안테나가 마련된다.
Abstract translation: 等离子体处理装置技术领域本发明涉及一种用于向处理室供应微波以产生等离子体并用等离子体处理该物体的等离子体处理装置。 在该等离子体处理装置中，处理容器具有：上板，其配置成在等离子体产生区域中隔着介质与被处理体相对; 上板设置有一个或多个天线，该天线布置成穿过上板并进入处理室。
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