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公开(公告)号：KR101886750B1
公开(公告)日：2018-08-13
申请号：KR1020110095814
申请日：2011-09-22
Applicant: 삼성전자주식회사 , 주식회사 동진쎄미켐
CPC classification number: G03F7/168 , C11D11/0047
Abstract: 본발명은알킬락테이트, 시클로헥사논, 및알킬아세테이트를포함하고, 상기알킬아세테이트의알킬치환체는탄소수 1 내지 5의비에테르계알킬기인 RRC (reduced resist coating) 공정용씨너조성물을제공한다. 본발명개념에따른 RRC 공정용씨너조성물을이용하면, 적은양의포토레지스트로도높은균일도로기판을불량없이도포할수 있어공정코스트를절감할수 있는장점이있다.
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公开(公告)号：KR1020160097675A
公开(公告)日：2016-08-18
申请号：KR1020150019667
申请日：2015-02-09
Applicant: 삼성전자주식회사
IPC: H01L21/027 , G03F7/20 , H01L21/02
CPC classification number: H01L21/0276 , G03F7/091 , G03F7/325 , G03F7/38 , G03F7/40 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02326 , H01L21/0273 , H01L21/0337 , H01L21/28273 , H01L21/31058 , H01L21/31144 , H01L21/32139 , G03F7/20 , H01L21/02255
Abstract: 본발명은미세패턴형성방법에관한것으로서, 더욱구체적으로는기판위에피식각막을형성하는단계; 상기피식각막위에반사방지막을형성하는단계; 상기반사방지막위에포토레지스트막을형성하는단계; 상기포토레지스트막을노광하는단계; 상기반사방지막및 상기포토레지스트막을열처리함으로써상기반사방지막과상기포토레지스트막사이에공유결합을형성하는단계; 및상기포토레지스트막을현상하는단계를포함하는반도체소자의제조방법이제공된다. 본발명의미세패턴형성방법을이용하면높은종횡비를갖는미세패턴을패턴붕괴없이제조할수 있는효과가있다.
Abstract translation: 本发明涉及形成微图案的方法。 更具体地说，本发明是提供一种制造半导体器件的方法，其包括以下步骤：在衬底上形成蚀刻靶膜; 在蚀刻靶膜上形成抗反射膜; 在抗反射膜上形成光致抗蚀剂膜; 曝光光刻胶膜; 对抗反射膜和光致抗蚀剂膜进行热处理，以在防反射膜和光致抗蚀剂膜之间形成共价键; 并显影光致抗蚀剂膜。 当使用根据本发明的形成微图案的方法时，可以在没有图案折叠的情况下制造具有高纵横比的微图案。
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Patent Agency Ranking
公开(公告)号：KR1020140092017A
公开(公告)日：2014-07-23
申请号：KR1020130004196
申请日：2013-01-15
Applicant: 삼성전자주식회사
IPC: H01L21/027
CPC classification number: H01L21/3088 , H01L21/0274 , H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/144 , H01L45/1683 , C23C16/06 , H01L21/76876
Abstract: In a method of forming a pattern, a lower film which includes a silicon compound which contains a photoacid-foaming agent on an etch object film. A photosensitive film is formed on the lower film. A pattern of the photosensitive film is formed by emitting extreme ultraviolet (EUV) to the photosensitive film. The etch object film is etched by using the pattern of the photosensitive film as an etch mask. Therefore, the present invention can improve resolution, sensitivity, and efficiency and simplifies processes when forming a fine pattern.
Abstract translation: 在形成图案的方法中，包括在蚀刻对象膜上含有光致酸发泡剂的硅化合物的下部膜。 在下膜上形成感光性膜。 感光膜的图案通过向感光膜发射极紫外（EUV）而形成。 通过使用感光膜的图案作为蚀刻掩模蚀刻蚀刻对象膜。 因此，本发明可以在形成精细图案时提高分辨率，灵敏度和效率，并简化工艺。
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公开(公告)号：KR1020120069503A
公开(公告)日：2012-06-28
申请号：KR1020110001548
申请日：2011-01-06
Applicant: 삼성전자주식회사 , 제이에스알 가부시끼가이샤
CPC classification number: C08J7/14 , C09D133/08 , G03F7/0392 , G01N33/50 , G03F7/00 , G03F7/004 , G03F7/0041 , G03F7/0045 , G03F7/0047 , C08F220/14 , C08F220/56 , C08F2220/302 , C08F220/54 , C08F2220/307
Abstract: PURPOSE: A composition synthesizing method, a micro array, an acid transferring composition, and a biochip manufacturing composition are provided to synthesize compounds on a substrate by using acid transferring film with acid transferring film with improved acid transferring characteristic. CONSTITUTION: A first film(20) is formed by combining a first compound(22) with a substrate. The first compound includes a protective group which is unstable to acid. A second film(30) is formed on the first film based on an acid transferring composition. The acid transferring composition includes a polymer, a radiation-sensitive acid generator, and a sensitizer. The second film is exposed, and acid generated at the exposed part of the second film is transferred to the first film. The protective group is eliminated from the first compound in the exposed part of the second film. The second film is eliminated after exposure. A second compound is combined with the first compound without the protective group.
Abstract translation: 目的：提供组合物合成方法，微阵列，酸转移组合物和生物芯片制造组合物，通过使用具有改善的酸转移特性的酸转移膜的酸转移膜在基材上合成化合物。 构成：通过将第一化合物（22）与基底组合而形成第一膜（20）。 第一种化合物包括对酸不稳定的保护基。 基于酸转移组合物在第一膜上形成第二膜（30）。 酸转移组合物包括聚合物，辐射敏感性酸产生剂和敏化剂。 暴露第二膜，在第二膜的暴露部分产生的酸转移到第一膜。 在第二膜的暴露部分中的第一化合物中除去保护基。 曝光后第二部电影被淘汰。 第二种化合物与没有保护基团的第一种化合物组合。
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公开(公告)号：KR1020120026872A
公开(公告)日：2012-03-20
申请号：KR1020100089047
申请日：2010-09-10
Applicant: 삼성전자주식회사
CPC classification number: H05H1/0031 , H05H1/2406 , H05H2001/2431 , H01L22/26 , H01L21/67253
Abstract: PURPOSE: A process monitoring device and a semiconductor process apparatus with the same, and a process monitoring method are provided to monitor a semiconductor manufacturing process regardless of pressure by extending the pressure range of the process monitoring device. CONSTITUTION: A housing(411) comprises an upper wall(411a), a bottom wall(411b), and a sidewall(411c). A plasma unit(420) generates plasma by ionizing a discharge gas. The plasma unit comprises a first electrode(422), a second electrode(424), and a power supply unit(426). The power supply unit applies the power to one of the first electrode and the second electrode. An optical emission spectrum unit(440) analyzes the light of the plasma generated from the plasma unit.
Abstract translation: 目的：提供一种过程监视装置及其半导体处理装置，以及处理监视方法，通过扩展处理监视装置的压力范围来监视半导体制造过程，不管压力如何。 构成：外壳（411）包括上壁（411a），底壁（411b）和侧壁（411c）。 等离子体单元（420）通过电离放电气体来产生等离子体。 等离子体单元包括第一电极（422），第二电极（424）和电源单元（426）。 电源单元向第一电极和第二电极之一施加电力。 光发射光谱单元（440）分析从等离子体单元产生的等离子体的光。
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29.发明公开감광성 반사 방지막 형성용 조성물, 이를 이용한 패턴 형성 방법 및 이를 이용한 반도체 소자의 제조 방법 无效用于感光型底漆底漆抗反射涂料的组合物，使用其的图案的制造方法以及使用其的半导体器件的制造方法
公开(公告)号：KR1020110088809A
公开(公告)日：2011-08-04
申请号：KR1020100008495
申请日：2010-01-29
Applicant: 삼성전자주식회사
IPC: G03F7/095 , H01L21/027
CPC classification number: G03F7/091 , G03F7/11 , H01L21/0276
Abstract: PURPOSE: A composition for forming a photosensitive type anti-reflective coating, a pattern forming method using the same, and a semiconductor device manufacturing method using the same are provided to form superior trench patterns based on little amount of exposed light. CONSTITUTION: A composition for forming a photosensitive type anti-reflective coating includes a photoacid generator containing onium salt and a photo-resist agent reacting with i-line light. The onium salt includes sulfonate. The sulfonate includes a sulfonate cation part represented by chemical formula 1 and a sulfonate anion part represented by chemical formula 2. In the chemical formula 1, the A, the B, and the C includes C1 to C20 alkyl group, C2 to C20 alkoxy group, C4 to C20 aryl group, C3 to C20 cyclo alkyl group, or C5 to C20 alkoxycyclo alkyl group. In the chemical formula 2, the n is 1 to 3. The X includes C4 to C10 cyclic group, alkyl group, cycloalkyl group, and other groups.
Abstract translation: 目的：提供一种用于形成感光型抗反射涂层的组合物，使用该组合物的图案形成方法和使用该组合物的半导体器件制造方法，以基于少量的曝光而形成优异的沟槽图案。 构成：用于形成感光型抗反射涂层的组合物包括含有鎓盐的光酸产生剂和与i线光反应的光致抗蚀剂。 鎓盐包括磺酸盐。 磺酸盐包括由化学式1表示的磺酸盐阳离子部分和由化学式2表示的磺酸根阴离子部分。在化学式1中，A，B和C包括C1〜C20烷基，C2〜C20烷氧基 C4〜C20芳基，C3〜C20环烷基或C5〜C20烷氧基环烷基。 在化学式2中，n为1〜3。X包括C 4〜C 10的环状基，烷基，环烷基等。
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公开(公告)号：KR1020080111312A
公开(公告)日：2008-12-23
申请号：KR1020070059548
申请日：2007-06-18
Applicant: 삼성전자주식회사
IPC: H01L21/027
CPC classification number: G03F7/2022 , G03F7/11 , G03F7/38 , G03F7/40 , H01L21/0274
Abstract: A photoresist pattern method for forming passivation layer and a fine pattern forming method using this are provided to limit exposure areas and unexposed areas in a photoresist film which covers a substrate by using exposure processes of 2 time. A photoresist pattern method for forming passivation layer comprises the following processes. A photoresist film(70) is formed on a substrate(51). Exposure areas(71,72) and unexposed area(70R) are limited to the photoresist film by using an exposure process. A reactant layer(80) is formed on the photoresist film having exposure areas. By using a chemical attachment process, the reactant layer is reacted and the protective film is formed on exposure areas. Photoresist patterns are formed by removing unexposed areas and the reactant layer which is remained after the reaction by using a photolithography process. A protective film remains on the photoresist patterns.
Abstract translation: 提供一种用于形成钝化层的光致抗蚀剂图案方法和使用这种方法的精细图案形成方法，以通过使用2次的曝光处理来限制覆盖基板的光致抗蚀剂膜中的曝光区域和未曝光区域。 用于形成钝化层的光致抗蚀剂图案方法包括以下处理。 在基板（51）上形成光致抗蚀剂膜（70）。 曝光区域（71,72）和未曝光区域（70R）通过曝光处理限于光致抗蚀剂膜。 在具有曝光区域的光致抗蚀剂膜上形成反应物层（80）。 通过使用化学附着工艺，使反应层发生反应，并在曝光区域形成保护膜。 通过使用光刻工艺去除未曝光的区域和反应后残留的反应物层形成光致抗蚀剂图案。 保护膜保留在光致抗蚀剂图案上。
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