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公开(公告)号：KR1020010076504A
公开(公告)日：2001-08-16
申请号：KR1020000003690
申请日：2000-01-26
Applicant: 한국과학기술연구원
CPC classification number: C23C14/34 , C23C14/0047 , C23C14/086 , C30B23/02 , C30B29/16
Abstract: PURPOSE: A method for manufacturing ZnO film for an infrared light receiving and emitting device operated at normal temperature and an apparatus therefor are provided to replace GaN by manufacturing ZnO film at lower costs. CONSTITUTION: The method for manufacturing ZnO film for the infrared light receiving and emitting device operated at normal temperature includes following steps. At first, a gas including Ar and O2 gases at predetermined ratio in a vacuum chamber to maintain the vacuum level lower than 1 to 500mTorr. Then, the substrate is pre-heated. At third, C and N are induced from an atom radicals implemented on the substrate and a ZnO single crystal film is vaporized on the substrate(3) by using an RF magnetron sputtering method. At third, the partial pressure of the oxygen in the chamber used while vaporizing ZnO film is maintained while the substrate is cooled down slowly. The Ar/O2 ratio is much less than 4/1. Alternatively, the Ar/O2 ratio is much less than 4/1.
Abstract translation: 目的：提供一种用于制造在常温下工作的红外光接收和发射装置的ZnO膜的方法及其装置，以较低成本制造ZnO膜来代替GaN。 构成：在常温下工作的红外光接收和发射装置的ZnO膜的制造方法包括以下步骤。 首先，在真空室中以预定比例包括Ar和O 2气体的气体以保持真空度低于1至500mTorr。 然后，将衬底预热。 第三，通过使用RF磁控溅射法，在基板上实现的原子自由基诱导C和N，并在基板（3）上蒸发ZnO单晶膜。 第三，在使衬底缓慢冷却的同时保持在蒸镀ZnO膜时使用的室中的氧的分压。 Ar / O2比值远低于4/1。 或者，Ar / O 2比远小于4/1。
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公开(公告)号：KR1020010013160A
公开(公告)日：2001-02-26
申请号：KR1019997011143
申请日：1998-12-03
Applicant: 한국과학기술연구원 , 주식회사 엘지이아이
IPC: C23C16/44
CPC classification number: C23C16/503 , B05D1/62 , B05D3/148 , B05D5/083 , C23C16/30 , C23C16/50 , C23C16/515 , C23C16/56 , F25B47/003 , F28F13/18 , F28F2245/02 , F28F2245/04
Abstract: PURPOSE: Provided is a plasma polymerization for forming a polymer with hydrophilicity or hydrophobicity on a surface of a material by using a DC discharge plasma or an RF discharge plasma. CONSTITUTION: A method for surface processing by plasma polymerization of a surface of a metal, for enhancing its usefulness in a refrigerating and air-conditioning apparatus by using a DC discharge plasma, comprises the steps of: (a) positioning an anode electrode which is substantially of a metal to be surface-modified and a cathode electrode in a chamber; (b) maintaining a pressure in the chamber at a predetermined vacuum level; (c) blowing a reaction gas comprising an unsaturated aliphatic hydrocarbon monomer gas at a predetermined pressure and a non-polymerizable gas at a predetermined pressure into the chamber, the non-polymerizable gas being 50-90% of the entire reaction gas; and (d) applying a voltage to the electrodes in order to obtain a DC discharge, whereby to obtain a plasma consisting of positive and negative ions and radicals generated from the unsaturated aliphatic hydrocarbon monomer gas and the non-polymerizable gas, and then forming a polymer with hydrophilicity on the surface of the anode electrode by plasma deposition.
Abstract translation: 目的：提供通过使用DC放电等离子体或RF放电等离子体在材料表面形成具有亲水性或疏水性的聚合物的等离子体聚合。 构成：通过等离子体聚合金属表面处理方法，通过使用DC放电等离子体来提高其在制冷空调装置中的用途，包括以下步骤：（a）将阳极电极 基本上待表面改性的金属和室中的阴极电极; （b）将腔室内的压力保持在预定的真空度; （c）将预定压力的不饱和脂族烃单体气体和预定压力的不可聚合气体的反应气体吹入室内，所述非可聚合气体为整个反应气体的50-90％; 和（d）向电极施加电压以获得DC放电，从而获得由不饱和脂族烃单体气体和非可聚合气体产生的正离子和负离子和自由基组成的等离子体，然后形成 通过等离子体沉积在阳极电极的表面上具有亲水性的聚合物。
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公开(公告)号：KR1020000039496A
公开(公告)日：2000-07-05
申请号：KR1019980054847
申请日：1998-12-14
Applicant: 주식회사 삼양홀딩스 , 한국과학기술연구원
IPC: C08J7/00
Abstract: PURPOSE: A polymer culture dish having an improved hydrophilic property and surface adhesiveness is provided which a part of carbon of the activated surface is reacted with a reactive gas after activating the surface by irradiating less than 2,000 eV of ion-beam. CONSTITUTION: A surface modifying apparatus comprises a gas inlet part(20) introducing a reactive gas into a vacuum chamber(10), an ion source(30) producing ion beam, a substrate holder(40) and a vacuum pump(50). The polymer culture dish is built in the substrate holder(40) and the reactive gas is introduced into the vacuum chamber(10) through the gas inlet part(20). Ion-beam having less than 2,000 eV is irradiated to activate the surface of the polymer culture dish from the ion source(30). The surface of the polymer culture is reacted with the reactive gas such as oxygen, nitrogen, carbon dioxide, carbon monoxide, ozone and their mixed gas to produce a hydrophilic group on the surface.
Abstract translation: 目的：提供具有改善的亲水性和表面粘合性的聚合物培养皿，其中活化表面的一部分碳通过照射小于2000eV的离子束而在活化表面后与反应性气体反应。 构成：表面改性装置包括将反应性气体引入真空室（10）的气体入口部分（20），产生离子束的离子源（30），衬底保持器（40）和真空泵（50）。 聚合物培养皿内置在基板保持件（40）中，反应气体通过气体入口部分（20）引入真空室（10）。 照射小于2000eV的离子束从离子源（30）活化聚合物培养皿的表面。 聚合物培养物的表面与氧，氮，二氧化碳，一氧化碳，臭氧及其混合气体等反应性气体反应，在表面产生亲水基团。
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公开(公告)号：KR1020170142601A
公开(公告)日：2017-12-28
申请号：KR1020160076351
申请日：2016-06-20
Applicant: 한국과학기술연구원
IPC: G01N33/543 , G01N33/551 , G01N33/534 , C09K11/65 , C09K11/54
Abstract: 본발명은 FRET 현상을이용하는바이러스검출물질을구성함에있어서산화아연-탄소기반양자점을적용함으로써인체유해성을회피함과함께바이러스존재유무를용이하게확인할수 있는산화아연-탄소기반양자점을이용한바이러스검출물질및 그제조방법에관한것으로서, 본발명에따른산화아연-탄소기반양자점을이용한바이러스검출물질은산화아연-탄소기반양자점; 상기산화아연-탄소기반양자점의일측에연결된항체; 및상기항체의일단에연결된흡수체를포함하여이루어지는것을특징으로한다.
Abstract translation: 与基于碳的量子发明病毒检测材料中的氧化锌的使用显影配置病毒检测材料的FRET通过施加基于碳的量子点的氧化，可以容易地证实病毒的存在与还避免人体的危害锌 本发明涉及使用氧化锌 - 碳基量子点的基于氧化锌 - 碳的量子点检测方法。 与氧化锌 - 碳基量子点的一侧连接的抗体; 和一个连接到抗体一端的吸收体。
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Patent Agency Ranking
公开(公告)号：KR101700884B1
公开(公告)日：2017-02-01
申请号：KR1020150017286
申请日：2015-02-04
Applicant: 한국과학기술연구원
CPC classification number: H01B1/02 , C01G19/02 , C01P2002/50 , C01P2002/54 , H01L29/43 , H01L31/022466 , H01L31/1884 , H01L33/42 , Y02E10/50
Abstract: 본발명은상온증착시에도낮은표면거칠기, 낮은면저항및 높은투과율특성을갖는최적조성의망간주석산화물계투명전도성산화물(TCO) 및이를이용한다층투명도전막그리고그 제조방법에관한것으로서, 본발명에따른망간주석산화물계투명전도성산화물은 MnSnO(0
Abstract translation: 公开了一种具有优化组成的锰锡氧化物基透明导电氧化物（TCO），其即使在室温下沉积时也具有低的表面粗糙度，低的薄层电阻和高透射率，使用其的多层透明导电膜和 制作相同。 锰氧化锡系透明导电氧化物具有Mn x Sn 1-x O（0
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公开(公告)号：KR1020160107720A
公开(公告)日：2016-09-19
申请号：KR1020150030876
申请日：2015-03-05
Applicant: 한국과학기술연구원
IPC: C01B31/02
CPC classification number: C01B32/158 , C01B2202/02 , C01P2004/64
Abstract: 본발명은직경 20 내지 30nm의나노링 형태의탄소나노튜브및 산처리된탄소나노튜브및 금속산화물전구체의용액을반응시켜침전물을얻는단계; 및상기침전물을산성용액에용해시켜금속산화물을제거하여직경 20 내지 30nm의나노링 형태의탄소나노튜브를얻는단계를포함하는나노링 형태의탄소나노튜브의제조방법을제공한다.
Abstract translation: 本发明提供纳米环状碳纳米管的制造方法，其特征在于，包括以下步骤：通过使具有20〜30nm直径的纳米环状碳纳米管与酸处理碳纳米管反应而得到析出物， 金属氧化物前体溶液; 并通过在将沉淀物溶解在酸性溶液中后除去金属氧化物，得到直径为20〜30nm的纳米环形碳纳米管。
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公开(公告)号：KR101607478B1
公开(公告)日：2016-03-30
申请号：KR1020140162583
申请日：2014-11-20
Applicant: 한국과학기술연구원
CPC classification number: Y02E10/549 , H01L51/426 , H01L51/442
Abstract: 본발명은핵-껍질구조의나노입자를이용한역구조유기태양전지소자와그 제조방법에관한것으로서, 더욱상세하게는기능화된금속산화물-그래핀의핵-껍질나노입자를표면개질고분자층과광활성층사이에전자수송층으로도입함으로써전극과광활성층사이에서밴드갭의배합을최적화하여전지수명과광전변환효율을크게개선한역구조유기태양전지소자와이를제조하는방법에관한것이다.
Abstract translation: 本发明涉及一种使用核 - 壳结构纳米颗粒的反向结构有机太阳能电池器件及其制造方法，更具体地涉及使用核 - 壳结构纳米颗粒采用核 - 壳的逆向结构有机太阳能电池器件 功能化金属氧化物石墨烯的纳米颗粒作为表面改性聚合物层和光活化层之间的电子传输层，以优化电极和光活化层之间的带隙的混合，以显着地改善电池寿命和光电转换效率 ，及其制造方法。
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公开(公告)号：KR101357044B1
公开(公告)日：2014-02-05
申请号：KR1020110095419
申请日：2011-09-21
Applicant: 한국과학기술연구원
IPC: H01L51/44 , H05B33/26 , G02F1/1343 , H01B5/14
CPC classification number: Y02E10/549 , Y02P70/521
Abstract: 본 발명은 내산성이 우수한 다층 박막 구조의 고(高) 투과도, 저(低) 비저항 투명 전극 및 그 제조 방법에 관한 것으로서, 더욱 상세하게는 유전체 박막/금속 박막/유전체 박막의 다층 구조 투명전극에 있어서 유전체 박막을 사용함으로써 가시광선 영역에서 굴절률과 투과도가 큰 광학적 성질이 우수한 효과가 있으며 유전체 박막 사이에 금속 박막을 삽입함으로써 굴절률이 낮으나 비저항이 작아 전기적 특성이 우수하고 내산성이 우수한 효과가 있는 다층 박막 구조의 고(高) 투과도, 저(低) 비저항 투명 전극 및 그 제조 방법에 관한 것이다.
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公开(公告)号：KR1020130038428A
公开(公告)日：2013-04-18
申请号：KR1020110102494
申请日：2011-10-07
Applicant: 한국과학기술연구원
CPC classification number: H01L31/035218 , B01J13/02 , B82Y40/00 , H01G9/204
Abstract: PURPOSE: An oxide semiconductor - nano carbon nucleus - shell integrated quantum dot is provided to maximize the chemical combinding number of metal-oxide-carbon(nano carbon) within oxide semiconductor by binding nano carbon with an excellent electrical characteristic to an oxide semiconductor with a chemical method. CONSTITUTION: An oxide semiconductor - nano carbon nucleus - shell integrated quantum dot has oxide semiconductor which comprises light absorption layer as a nucleus and cover the core with nano carbon in a form of shell. The oxide semiconductor is zinc oxide. The nano carbon is graphene or fullerene. Connect a oxide semiconductor which comprised nucleus and a nano carbon which comprises the shell through a chemical bond of oxygen atom. A size of the quantum dot is 8-15nm. An ultraviolet ray solar cell has oxide semiconductor - nano carbon integrated nucleus - shell quantum dot as a single active layer.
Abstract translation: 目的：提供氧化物半导体 - 纳米碳核 - 壳集成量子点，通过将具有优异电特性的纳米碳与氧化物半导体结合，使氧化物半导体中的金属氧化物 - 碳（纳米碳）的化学组合数最大化， 化学方法。 构成：氧化物半导体 - 纳米碳核 - 壳集成量子点具有氧化物半导体，其包括作为核的光吸收层并且以壳的形式用纳米碳覆盖核心。 氧化物半导体是氧化锌。 纳米碳是石墨烯或富勒烯。 通过氧原子的化学键连接包含核和包含壳的纳米碳的氧化物半导体。 量子点的大小为8-15nm。 紫外线太阳能电池具有氧化物半导体 - 纳米碳集成核 - 壳量子点作为单一活性层。
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