公开(公告)号：DE69126907D1

公开(公告)日：1997-08-28

申请号：DE69126907

申请日：1991-04-05

Applicant: CANON KK

Inventor： FUJIOKA HIDEHIKO ,  MIYACHI TAKESHI ,  FUKUDA YASUAKI ,  CHIBA YUJI ,  MIZUSAWA NOBUTOSHI ,  KARIYA TAKAO ,  UZAWA SHUNICHI

IPC: G03F1/22 ,  G03F1/60 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  G03F1/14

Abstract: An X-ray mask structure includes a mask substrate having a pattern; a supporting frame for carrying and supporting the mask substrate; and an adhesive material for fixing the mask substrate to the supporting frame; wherein an stress releasing groove is formed in at least one of the mask substrate and the supporting frame.

公开(公告)号：DE69126719D1

公开(公告)日：1997-08-14

申请号：DE69126719

申请日：1991-03-08

Applicant: CANON KK

Inventor： MIZUSAWA NOBUTOSHI ,  EBINUMA RYUICHI C O CANON KABU ,  KUROSAWA HIROSHI ,  UDA KOJI ,  KARIYA TAKAO ,  UZAWA SHUNICHI

IPC: G03F7/20

Abstract: An exposure method for manufacture of semiconductor devices, includes moving a shutter having an edge so that the edge is related to a predetermined exposure region; projecting an exposure beam to the edge of the shutter and to at least a portion of the exposure region; determining a position of a shadow of the edge of the shutter formed by the exposure beam with respect to a predetermined coordinate system related to movement of a movable chuck; adjusting the shutter in accordance with the determination; placing a substrate on the chuck; moving the chuck so that the substrate is related to the exposure region; and controlling the exposure of the substrate with the exposure beam through the shutter.

公开(公告)号：DE69126456D1

公开(公告)日：1997-07-17

申请号：DE69126456

申请日：1991-02-28

Applicant: CANON KK

Inventor： EBINUMA RYUICHI ,  MIZUSAWA NOBUTOSHI ,  KARIYA TAKAO ,  SUDA SHIGEYUKI ,  UZAWA SHUNICHI

IPC: G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30 ,  G03B27/53

公开(公告)号：DE69123610T2

公开(公告)日：1997-04-24

申请号：DE69123610

申请日：1991-01-31

Applicant: CANON KK

Inventor： SHIMODA ISAMU ,  KARIYA TAKAO ,  MIZUSAWA NOBUTOSHI ,  OZAWA KUNITAKA ,  UZAWA SHUNICHI

IPC: G03F7/20

Abstract: A method of manufacture of semiconductor devices, includes exposing different portions of a semiconductor substrate (2) with a first exposure apparatus (100) having a first exposure range; placing and aligning the semiconductor substrate with respect to a second exposure range of a second exposure apparatus (200) which range is larger than the first exposure range of the first exposure apparatus; detecting an alignment error of each of the portions of the semiconductor substrate as covered by the second exposure range of the second exposure apparatus; calculating an overall alignment error of those portions of the semiconductor substrate with respect to the whole second exposure range of the second exposure apparatus, on the basis of the detected alignment errors; and controlling the exposure operation of the second exposure apparatus on the basis of the calculated overall alignment error.

公开(公告)号：DE69121747T2

公开(公告)日：1997-01-23

申请号：DE69121747

申请日：1991-03-18

Applicant: CANON KK

Inventor： MARUMO MITSUJI ,  IWAMOTO KAZUNORI ,  MIZUSAWA NOBUTOSHI ,  KARIYA TAKAO ,  UZAWA SHUNICHI

IPC: H01L21/673 ,  G03F7/20 ,  H01L21/027 ,  H01L21/677 ,  H01L21/683 ,  H01L21/687 ,  H05K13/00 ,  H01L21/00

Abstract: A device for holding a substrate includes a holding system for holding a substrate by attraction and a guard system for preventing drop of the substrate held by the holding system, the guard system being out of contact with the substrate as the same is held by the holding system.

公开(公告)号：DE68923638D1

公开(公告)日：1995-09-07

申请号：DE68923638

申请日：1989-03-28

Applicant: CANON KK

Inventor： AMEMIYA MITSUAKI ,  UZAWA SHUNICHI

IPC: G03F1/00

Abstract: A method and apparatus for inspecting and repairing a mask usable in manufacture of semiconductor microcircuits, by using an electron beam is disclosed. The inspection and repair of a mask pattern are made in a single apparatus, by using a controlled current of electron beam. For inspection, the surface of a mask (4) having a mask pattern (3) and a radiation-sensitive layer (5), covering it, is scanned with an electron beam (6) and, by detecting (7) secondary electrons or reflected electrons caused at that time, the state of the pattern is inspected. If any defect is detected (12-15), the portion of the radiation-sensitive layer on the detected defect is irradiated with an electron beam of greater magnitude than that for the inspection and, thereafter, the exposed portion of the radiation-sensitive layer is removed. Then, etching or plating is made to the thus uncovered portion, whereby repair of the mask pattern is made.

公开(公告)号：DE68921341T2

公开(公告)日：1995-08-17

申请号：DE68921341

申请日：1989-10-30

Applicant: CANON KK

Inventor： UZAWA SHUNICHI ,  KARIYA TAKAO ,  HIGOMURA MAKOTO ,  MIZUSAWA NOBUTOSHI ,  EBINUMA RYUICHI ,  UDA KOJI ,  OZAWA KUNITAKA ,  AMEMIYA MITSUAKI ,  SAKAMOTO EIJI ,  ABE NAOTO ,  SAITOH KENJI

IPC: G03F7/20 ,  G03F9/00

公开(公告)号：DE68922945D1

公开(公告)日：1995-07-13

申请号：DE68922945

申请日：1989-09-08

Applicant: CANON KK

Inventor： MIZUSAWA NOBUTOSHI ,  EBINUMA RYUICHI ,  KARIYA TAKAO ,  UZAWA SHUNICHI ,  SHIMODA ISAMU

IPC: G03F7/20

公开(公告)号：DE68922798D1

公开(公告)日：1995-06-29

申请号：DE68922798

申请日：1989-07-31

Applicant: CANON KK

Inventor： IWAMOTO KAZUNORI ,  UZAWA SHUNICHI ,  KARIYA TAKAO ,  EBINUMA RYUICHI ,  CHIBA HIROSHI ,  OHKAWA SHINKICHI

IPC: G03F7/20 ,  G12B5/00

Abstract: A method of supporting or mounting a precision instrument for supporting a mask and a wafer in a vacuum container. It is particularly applicable to a SOR-X ray exposure apparatus wherein the mask and the wafer are disposed in a desired level of the reduced pressure, and exposure energy such as X-rays contained in synchrotron radiation is projected onto the wafer through the mask to print the pattern of the mask onto the wafer. In x-y-z coordinates with the x direction being vertical, the precision instrument in hung at at least two points which are spaced in the x direction, to the inside wall of the vacuum container. At one of the supporting points, the precision instrument is given latitude of x, y and z direction movement, and at the other supporting point, the precision instrument is fixed or is given a latitude only in the x direction. By this, when the vacuum container deforms by the difference between the internal and external pressures, the precision instrument can be supported correctly.

公开(公告)号：DE68929187T2

公开(公告)日：2000-09-28

申请号：DE68929187

申请日：1989-08-31

Applicant: CANON KK

Inventor： KUROSAWA HIROSHI ,  AMEMIYA MITSUAKI ,  TERASHIMA SHIGERU ,  UDA KOJI ,  SHIMODA ISAMU ,  UZAWA SHUNICHI ,  OZAWA KUNITAKA ,  HARA SHINICHI ,  KAWAKAMI EIGO ,  MIZUSAWA NOBUTOSHI ,  MORI MAKIKO ,  EBINUMA RYUICHI

IPC: G03F7/20

Abstract: An exposure apparatus usable with synchrotron radiation source (201) wherein the synchrotron radiation (202,204) is generated by electron injection (210) into a ring (201). The exposure apparatus is to transfer a semiconductor element pattern of a mask (208) onto a semiconductor wafer (209) by the synchrotron radiation. The apparatus includes a shutter (207) for controlling the exposure of the wafer (209). The shutter (207) controls the exposure with the illuminance distribution on the wafer surface taken into account. The illuminance distribution is determined (206,211,216) in response to the electron injection (210), and thereafter, the illuminance distribution is corrected (216,215,213,207) in a predetermined manner. By this, the illuminance distribution data for controlling (213,215) the shutter (207) always correspond to the actual illuminance distribution. The entire shot areas of the semiconductor wafer (209) are exposed with high precision.