公开(公告)号：DE69228358T2

公开(公告)日：1999-09-23

申请号：DE69228358

申请日：1992-10-23

Applicant: IBM

Inventor： KNORS CHRISTOPHER JOHN ,  MIURA STEVE SEIICHI ,  MONTGOMERY MELVIN WARREN ,  MOREAU WAYNE MARTIN ,  SMITH RANDOLPH JOSEPH

IPC: G03F7/022 ,  H01L21/027

Abstract: Positive photoresist compositions and methods using the photoresist compositions for making submicron patterns in the production of semiconductor devices are disclosed. The photoresists contain sensitizers that are mixed naphthoquinonediazide 4- and 5- sulfonic acid esters of bis and tris(mono, di and trihydroxyphenyl) alkanes.

公开(公告)号：DE69320567T2

公开(公告)日：1999-04-22

申请号：DE69320567

申请日：1993-06-15

Applicant: IBM

Inventor： KNORS CHRISTOPHER JOHN ,  MOREAU WAYNE MARTIN ,  MACY ELWOOD HERBERT

IPC: C08F8/32 ,  C09B69/10 ,  C09D5/00 ,  C09D133/02 ,  C09D133/26 ,  G02B1/11 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027 ,  H01L21/30

Abstract: A composition and methods for the use and manufacture thereof are provided for a polymeric dye. The composition comprises one or more aminoaromatic chromophores in conjunction with polymers having an anhydride group or the reaction products thereof. The composition is particularly useful as an underlaying antireflective coating with microlithographic photoresists for the absorbtion of near or deep ultraviolet radiation.

公开(公告)号：DE69228358D1

公开(公告)日：1999-03-18

申请号：DE69228358

申请日：1992-10-23

Applicant: IBM

Inventor： KNORS CHRISTOPHER JOHN ,  MIURA STEVE SEIICHI ,  MONTGOMERY MELVIN WARREN ,  MOREAU WAYNE MARTIN ,  SMITH RANDOLPH JOSEPH

IPC: G03F7/022 ,  H01L21/027

Abstract: Positive photoresist compositions and methods using the photoresist compositions for making submicron patterns in the production of semiconductor devices are disclosed. The photoresists contain sensitizers that are mixed naphthoquinonediazide 4- and 5- sulfonic acid esters of bis and tris(mono, di and trihydroxyphenyl) alkanes.

公开(公告)号：DE69125745D1

公开(公告)日：1997-05-28

申请号：DE69125745

申请日：1991-01-25

Applicant: IBM

Inventor： BRUNSVOLD WILLIAM ROSS ,  KNORS CHRISTOPHER JOHN ,  MONTGOMERY MELVIN WARREN ,  MOREAU WAYNE MARTIN ,  WELSH KEVIN MICHAEL

IPC: G03F7/004 ,  G03F7/029 ,  G03F7/039 ,  H01L21/027 ,  H01L21/30

公开(公告)号：DE69027799D1

公开(公告)日：1996-08-22

申请号：DE69027799

申请日：1990-02-02

Applicant: IBM

Inventor： BRUNSVOLD WILLIAM ROSS ,  KNORS CHRISTOPHER JOHN ,  KWONG RANEE WAI-LING ,  MIURA STEVE SEIICHI ,  MONTGOMERY MELVIN WARREN ,  MOREAU WAYNE MARTIN ,  SACHDEV HARBANS SINGH

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027 ,  H01L21/30

Abstract: Resists for use in photon, electron beam and x-ray exposure devices comprise a polymeric or molecular composition the solubility of which is dependent upon the presence of acid removable protecting groups and a sulfonic acid precursor which generates a strong acid upon exposure to such radiation. The preferred sulfonic acid precursors are triflate salts of imides.

公开(公告)号：DE2553519A1

公开(公告)日：1976-07-01

申请号：DE2553519

申请日：1975-11-28

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  MOREAU WAYNE MARTIN ,  NEED III OMAR U

IPC: G03F7/16 ,  G03C1/74 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027 ,  H05K3/00 ,  G03F7/10

Abstract: Very sensitive electron beam positive resists have been obtained using films of nitrocellulose containing 10.5 to 12% nitrogen.

公开(公告)号：DE2512745A1

公开(公告)日：1975-10-09

申请号：DE2512745

申请日：1975-03-22

Applicant: IBM

Inventor： CORTELLINO CHARLES ANTHONY ,  GIPSTEIN EDWARD ,  HEWETT WILLIAM AINSLIE ,  JOHNSON DUANE EDWARD ,  MOREAU WAYNE MARTIN

IPC: G03F7/039 ,  H01L21/027 ,  G03F7/10

Abstract: It has been discovered that the sensitivity of positive acting polymeric electron beam resists is increased by well over an order of magnitude by using polymers having a molecular weight of at least one million, thereby making it possible to reduce the required radiation to below 3 x 10 6 coulombs/cm2.