公开(公告)号：WO2004018959A3

公开(公告)日：2004-10-07

申请号：PCT/US0325769

申请日：2003-08-15

Applicant: HYPERNEX INC ,  IBM

Inventor： KOZACZEK KRZYSZTOF J ,  KURTZ DAVID S ,  MORAN PAUL R ,  MARTIN ROGER I ,  DEHAVEN PATRICK W ,  RODBELL KENNETH P ,  MALHOTRA SANDRA G

IPC: G01B15/02 ,  G01N23/20 ,  G01N23/223

CPC classification number: G01N23/20 ,  G01B15/02

Abstract: An apparatus and method for mapping film thickness of one or more textured polycrystalline thin films. Multiple sample films of known thickness are provided. Each sample film is irradiated by x-ray at a measurement point to generate a diffraction image that captures a plurality of diffraction arcs. Texture information (i.e., pole densities) of the sample film is calculated based on incomplete pole figures collected on the diffraction image and used to correct the x-ray diffraction intensities from such sample. The corrected diffraction intensities are integrated for each sample film, and then used for constructing a calibration curve that correlates diffraction intensities with respective known film thickness of the sample films. The film thickness of a textured polycrystalline thin film of unknown thickness can therefore be mapped on such calibration curve, using a corrected and integrated diffraction intensity obtained for such thin film of unknown thickness.

Abstract translation: 一种用于映射一个或多个纹理化多晶薄膜的膜厚度的装置和方法。 提供了已知厚度的多个样品膜。 每个样品膜在测量点用X射线照射以产生捕获多个衍射弧的衍射图像。 基于在衍射图像上收集的不完整极点图来计算样品膜的纹理信息（即极密度）并且用于校正来自该样品的x射线衍射强度。 校正的衍射强度对每个样品膜进行积分，然后用于构建使衍射强度与样品膜的相应已知膜厚相关的校准曲线。 因此，使用针对这种未知厚度的薄膜获得的校正和积分衍射强度，可以将具有未知厚度的纹理化多晶薄膜的膜厚度映射到这种校准曲线上。

公开(公告)号：WO02100593A3

公开(公告)日：2003-06-05

申请号：PCT/US0143208

申请日：2001-11-20

Applicant: IBM ,  CHEN SHYNG-TSONG ,  RODBELL KENNETH P ,  HSU OSCAR KAI CHI ,  VANGSNESS JEAN ,  GILBRIDE DAVID S ,  BILLINGS SCOTT CLAYTON ,  DAVIS KENNETH

Inventor： CHEN SHYNG-TSONG ,  RODBELL KENNETH P ,  HSU OSCAR KAI CHI ,  VANGSNESS JEAN ,  GILBRIDE DAVID S ,  BILLINGS SCOTT CLAYTON ,  DAVIS KENNETH

IPC: B24B37/24 ,  B24D3/28 ,  B24D11/00 ,  B24D13/14 ,  C08J5/14 ,  H01L21/304 ,  B24B1/00 ,  B27N3/18

CPC classification number: B24B37/24 ,  B24D3/28 ,  B24D11/008

Abstract: A polishing pad having a body comprising fibers embedded in a matrix polymer formed by a reaction of polymer precursors. The fibers define interstices, and the precursors fill these interstices substantially completely before completion of the reaction. The pad may include a thin layer of free fibers at its polishing surface. A segment of at least a portion of the free fibers are embedded in the adjacent body of the polymer and fibers. The fibers may be separate, or in the form of a woven or non-woven web.

Abstract translation: 一种抛光垫，其具有包含嵌入在通过聚合物前体的反应形成的基质聚合物中的纤维的主体。 纤维定义空隙，并且前体在反应完成之前基本上完全填充这些间隙。 衬垫在其抛光表面可以包括薄层的自由纤维。 至少一部分自由纤维的片段嵌入在聚合物和纤维的相邻体中。 纤维可以是分开的，或者是织造或非织造网的形式。

公开(公告)号：CA2413803A1

公开(公告)日：2002-01-10

申请号：CA2413803

申请日：2001-06-27

Applicant: FREUDENBERG NON WOVENS ,  IBM

Inventor： DAVIS KENNETH M ,  HSU OSCAR KAI CHI ,  CHUNG ALEX SIU KEUNG ,  CHEN SHYNG-TSONG ,  RODBELL KENNETH P

IPC: B24B37/26 ,  B24D13/14 ,  H01L21/304 ,  B24B1/00

Abstract: Grooves (70, 76, 78, & 80-82) are formed in a CMP pad (12) by positionin g the pad (12) on a supporting surface (10) with a working surface (22) of the pad (12) in spaced relation opposite to a router bit (24) and at least one projecting stop member (33) adjacent to the router bit (24), an outer end portion of the bit (24) projecting beyond the stop (33). When the bit (24) i s rotated, relative axial movement between the bit (24) and the pad (12) cause s the outer end portion of the bit (24) to cut an initial recess in the pad (12). Relative lateral movement between the rotating bit (24) and the pad (1 2) then forms a groove (70) which extends laterally away from the recess and ha s a depth substantially the same as that of the recess. The depths of the initial recess and the groove (70) are limited by applying a vacuum to the working surface (22) of the pad (12) to keep it in contact with the stop member(s) (33). Different lateral movements between the bit (24) and the pad (12) are used to form a variety of groove patterns (76, 78, & 80-82), th e depths of which are precisely controlled by the stop member(s) (33).

公开(公告)号：CA2011709C

公开(公告)日：1993-12-21

申请号：CA2011709

申请日：1990-03-07

Applicant: IBM

Inventor： CARR JEFFREY W ,  DAVID LAWRENCE D ,  GUTHRIE WILLIAM L ,  KAUFMAN FRANK B ,  PATRICK WILLIAM J ,  RODBELL KENNETH P

IPC: C09G1/02 ,  H01L21/306 ,  H01L21/48 ,  C23F1/44 ,  H01L21/302

Abstract: Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps; obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting the substrate with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles, a transition metal chelated salt and a solvent for the salt. The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.

公开(公告)号：CA2009247A1

公开(公告)日：1990-10-17

申请号：CA2009247

申请日：1990-02-02

Applicant: IBM

Inventor： RODBELL KENNETH P ,  TOTTA PAUL A ,  WHITE JAMES F

IPC: H01L23/52 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/48 ,  H01L23/498 ,  H05K1/09 ,  H05K3/16 ,  H05K3/38

Abstract: A sputtered low copper concentration multilayered device interconnect metallurgy structure is disclosed herein. The interconnect metallurgy is seen to comprise a four-layer structure over an interplanar stud connection (10) surrounded by an insulator (8) to make connection to a device substrate (6). The four-layer structure consists of an intermetallic bottom layer (12 min ) typically 700 ANGSTROM thick and, in a preferred embodiment would comprise TiAl3. Above is a low percent (

公开(公告)号：DE112012003823T5

公开(公告)日：2014-08-07

申请号：DE112012003823

申请日：2012-07-18

Applicant: IBM

Inventor： CABRAL CYRIL JR ,  NOGAMI TAKESHI ,  GAMBINO JEFFREY P ,  HUANG QIANG ,  RODBELL KENNETH P

IPC: H01L21/28

Abstract: Eine Metallverbindungsstruktur und ein Verfahren zur Herstellung der Metallverbindungsstruktur. Mangan (Mn) wird in eine Kupfer(Cu)-Verbindungsstruktur eingebaut, um die Mikrostruktur zu modifizieren, um Bambusstil-Korngrenzen in Sub-90-nm-Technologien zu erreichen. Vorzugsweise sind die Bambuskörner durch Abstände von weniger als der „Blech”-Länge getrennt, so dass eine Kupfer(Cu)-Diffusion durch Korngrenzen vermieden wird. Das hinzugefügte Mn löst auch das Wachstum von Cu-Körnern herunter bis zu der unteren Fläche der Metallleitung aus, so dass eine echte Bambusmikrostruktur gebildet wird, welche bis zu der unteren Fläche reicht, und der Cu-Diffusionsmechanismus entlang Korngrenzen, die entlang der Länge der Metallleitung orientiert sind, eliminiert wird.

公开(公告)号：DE102012214668A1

公开(公告)日：2013-02-28

申请号：DE102012214668

申请日：2012-08-17

Applicant: IBM

Inventor： YAU JENG-BANG ,  GORDON MICHAEL S ,  RODBELL KENNETH P

IPC: H01L21/84 ,  G01T1/24 ,  H01L21/266 ,  H01L21/324 ,  H01L21/76 ,  H01L23/552 ,  H01L23/58 ,  H01L27/144 ,  H01L31/119

Abstract: Ein Verfahren zum Bilden einer Halbleitereinheit umfasst das Bilden einer Implantationsmaske auf einem Substrat, so dass sich ein erster Abschnitt des Substrats unter der Implantationsmaske befindet und ein zweiter Abschnitt frei liegt; das Durchführen einer Sauerstoffionenimplantation an dem Substrat; das Entfernen der Implantationsmaske; und das Bilden eines ersten Feldeffekttransistors (FET) auf dem ersten Abschnitt des Substrats und das Bilden eines zweiten FET auf dem zweiten Abschnitt des Substrats, wobei der zweite FET eine höhere Strahlungsempfindlichkeit als der erste FET aufweist.

公开(公告)号：AU2001297847A1

公开(公告)日：2002-12-23

申请号：AU2001297847

申请日：2001-11-20

Applicant: IBM ,  FREUDENBERG NONWOVENS L P

Inventor： RODBELL KENNETH P ,  VANGSNESS JEAN ,  HSU OSCAR KAI CHI ,  BILLINGS SCOTT CLAYTON ,  DAVIS KENNETH ,  GILBRIDE DAVID S ,  CHEN SHYNG-TSONG

IPC: B24B37/24 ,  B24D3/28 ,  B24D11/00 ,  B24D13/14 ,  C08J5/14 ,  H01L21/304 ,  B24B1/00 ,  B27N3/18

公开(公告)号：AU7304501A

公开(公告)日：2002-01-14

申请号：AU7304501

申请日：2001-06-27

Applicant: IBM ,  FREUDENBERG NON WOVENS

Inventor： CHEN SHYNG-TSONG ,  CHUNG ALEX SIU KEUNG ,  DAVIS KENNETH M ,  HSU OSCAR KAI CHI ,  RODBELL KENNETH P

IPC: B24B37/26 ,  B24D13/14 ,  H01L21/304 ,  B24B1/00

Abstract: Grooves are formed in a COD pad by positioning the pad on a supporting surface with a working surface of the pad in spaced relation opposite to a router bit and at least one projecting stop member adjacent to the router bit, an outer end portion of the bit projecting beyond the stop. When the bit is rotated, relative axial movement between the bit and the pad causes the outer end portion of the bit to cut an initial recess in the pad. Relative lateral movement between the rotating bit and the pad then forms a groove which extends laterally away from the recess and has a depth substantially the same as that of the recess. The depths of the initial recess and the groove are limited by applying a vacuum to the working surface of the pad to keep it in contact with the stop member(s). Different lateral movements between the bit and the pad are used to form a variety of groove patterns, the depths of which are precisely controlled by the stop member(s).

公开(公告)号：DE102016218690B4

公开(公告)日：2019-02-07

申请号：DE102016218690

申请日：2016-09-28

Applicant: IBM

Inventor： GORDON MICHAEL S ,  NING TAK H ,  RODBELL KENNETH P ,  YAU JENG-BANG

IPC: H01L27/14 ,  G01T1/24 ,  H01L21/331 ,  H01L27/102 ,  H01L29/735

Abstract: Integrierter Strahlungssensor (20; 60; 100; 120; 200; 260), der aufweist:eine Messstruktur;einen ersten lateralen Bipolartransistor (30; 62; 62; 122; 211; 264) mit einer Basis (33; 74; 74; 130; 213; 286), die mit der Messstruktur elektrisch gekoppelt ist, wobei der erste laterale Bipolartransistor so konfiguriert ist, dass er ein Ausgangssignal erzeugt, das indikativ für eine Änderung einer gespeicherten Ladung in der Messstruktur ist, die aus dem Vorhandensein einer Umgebungseigenschaft resultiert;einen zweiten lateralen Bipolartransistor (24; 64; 102; 124; 201; 262), der benachbart zu dem ersten lateralen Bipolartransistor und mit diesem elektrisch verbunden ist, wobei der zweite laterale Bipolartransistor so konfiguriert ist, dass er das Ausgangssignal des ersten lateralen Bipolartransistors verstärkt, wobei der erste laterale Bipolartransistor und der zweite laterale Bipolartransistor entgegengesetzte Polaritäten aufweisen, undein Substrat, wobei der erste laterale Bipolartransistor, der zweite laterale Bipolartransistor und das Substrat eine monolithische Struktur bilden.