公开(公告)号：DE10024480B4

公开(公告)日：2006-02-16

申请号：DE10024480

申请日：2000-05-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER HANS ,  AUERBACH FRANZ ,  DEBOY GERALD

IPC: H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/70 ,  H01L29/74 ,  H01L29/78 ,  H01L29/861

Abstract: The compensation component is formed with compensation regions in a semiconductor between two electrodes. By varying the second field and/or the first field, a location of a maximum field strength is displaced into the center of the compensation regions between the electrodes.

公开(公告)号：DE102004047358B3

公开(公告)日：2005-11-03

申请号：DE102004047358

申请日：2004-09-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DEBOY GERALD ,  FAHLENKAMP MARC

IPC: H01L25/07 ,  H01L25/16 ,  H01L27/06 ,  H01L27/088 ,  H01L29/06 ,  H01L29/78 ,  H02M3/28 ,  H03K17/08 ,  H03K17/082 ,  H05B41/282

公开(公告)号：DE10326739B3

公开(公告)日：2005-03-24

申请号：DE10326739

申请日：2003-06-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WILLMEROTH ARMIN ,  KAPELS HOLGER ,  DEBOY GERALD

IPC: H01L27/08 ,  H01L29/06 ,  H01L29/866 ,  H01L29/872

Abstract: The Schottky-metal contact (2) borders on the drift zone (4) and the compensation zone (8).

公开(公告)号：DE10321222A1

公开(公告)日：2004-12-23

申请号：DE10321222

申请日：2003-05-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TIHANYI JENOE ,  DEBOY GERALD

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/808 ,  H01L29/872 ,  H01L29/739

Abstract: A semiconductor element comprises two electrodes (7,9) with a doped drift zone (2) between them. In the drift zone and around the electrodes are embedded regions of opposite type dopant (10).

公开(公告)号：DE10122362B4

公开(公告)日：2004-12-09

申请号：DE10122362

申请日：2001-05-09

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PFIRSCH FRANK ,  WILLMEROTH ARMIN ,  AUERBACH FRANZ ,  DEBOY GERALD ,  AHLERS DIRK ,  WEBER HANS

IPC: H01L29/06 ,  H01L29/167 ,  H01L29/739 ,  H01L29/78 ,  H01L29/36

公开(公告)号：DE10245091B4

公开(公告)日：2004-09-16

申请号：DE10245091

申请日：2002-09-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DEBOY GERALD ,  MILLER GERHARD ,  STENGL JENS-PEER ,  SCHULZE HANS-JOACHIM

IPC: H01L21/263 ,  H01L21/336 ,  H01L29/06 ,  H01L29/78 ,  H01L29/861 ,  H01L21/328

公开(公告)号：DE19843959B4

公开(公告)日：2004-02-12

申请号：DE19843959

申请日：1998-09-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DEBOY GERALD ,  HAEBERLEN OLIVER ,  STRACK HELMUT ,  RUEB MICHAEL ,  FRIZA WOLFGANG

IPC: H01L21/265 ,  H01L21/336 ,  H01L29/06 ,  H01L29/10 ,  H01L29/78 ,  H01L21/334 ,  H01L21/328

Abstract: The invention relates to a method for producing a semiconductor component including semiconductor areas of different conductivity types which are alternately positioned in a semiconductor body. The semiconductor areas of different conductivity types extend at least from one first zone to a position near a second zone. Because of variable doping in trenches and in the trench fillings, an electric field is generated which increases from both the first zone and the second zone.

公开(公告)号：DE10066053A1

公开(公告)日：2002-06-27

申请号：DE10066053

申请日：2000-12-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER HANS ,  AHLERS DIRK ,  STENGL JENS-PEER ,  DEBOY GERALD ,  WILLMEROTH ARMIN ,  RUEB MICHAEL ,  CUADRON MARION MIGUEL

IPC: H01L21/336 ,  H01L29/06 ,  H01L29/10 ,  H01L29/78 ,  H01L29/739

公开(公告)号：DE10024859A1

公开(公告)日：2001-12-06

申请号：DE10024859

申请日：2000-05-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DEBOY GERALD ,  HUESKEN HOLGER ,  LASKA THOMAS

IPC: H01L29/739 ,  H01L27/04 ,  H01L29/78 ,  H02M3/00 ,  H02M3/335 ,  H02M7/00 ,  H02M7/537 ,  H02M7/523 ,  H02M1/08 ,  H02M7/12 ,  H02M7/48 ,  H05B37/02 ,  H03K17/14 ,  H03K17/687 ,  H03K17/567

Abstract: The invention relates to a reduced load switching device such as a component in a switching network or a lamp control device wherein the circuit breaker is embodied as an IGBT, especially a field stop IGBT or alternately and additionally as a PT IGBT.

公开(公告)号：DE19942679C1

公开(公告)日：2001-04-05

申请号：DE19942679

申请日：1999-09-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  DEBOY GERALD

IPC: H01L21/265 ,  H01L21/266 ,  H01L29/06 ,  H01L29/167 ,  H01L29/78

Abstract: The invention relates to a method for producing an edge termination, which is capable of handling high voltages, in a base material wafer prefabricated according to the principle of lateral charge compensation. The edge termination (4) is placed in the prefabricated base material wafer by implanting a rapidly diffusing dopant such as, in particular, selenium or sulfur.