公开(公告)号：DE10256116A1

公开(公告)日：2004-07-08

申请号：DE10256116

申请日：2002-11-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： THEUS HORST ,  WEBER MICHAEL ,  MECKES ANDREAS

IPC: B81B3/00 ,  B81C1/00 ,  H01L23/50 ,  B81C5/00 ,  B81B1/00

Abstract: The method involves producing an active area (5) in the positions of semiconductor chips on an active top side (4) of the wafer, and applying contact surfaces (6) outside the active area. A sacrificial layer comprising insulating material is applied to the active area, leaving openings in the sacrificial layer at the edges of the active area. A conductive material is applied, the sacrificial layer removed, and a plastics layer applied before applying external contacts and separating the wafer into individual electronic devices. Independent claims are included for an electronic device; and a semiconductor wafer.

公开(公告)号：DE10247227A1

公开(公告)日：2004-04-22

申请号：DE10247227

申请日：2002-10-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BECKER BURKHARD ,  YANG BIN ,  WEBER MICHAEL ,  HEIN WERNER ,  METZ NORBERT ,  STEGER JOHANN ,  BOHNHOFF PETER

IPC: H04L25/03 ,  H04L27/01 ,  G06F19/00 ,  H03M13/41 ,  H04B1/06 ,  H04B1/40 ,  H04B15/00

Abstract: Both computer procedures are repeated. Results of the second procedure form inputs for the first, using the following stages. The data flow is divided into processing sections (I1, I2, I3, I4, r1, r2, r4, r4; a1, a2, ap). The first computer procedure is carried out for a specific processing stage (r1; a1) and (b2) overlapping in time with execution of the first computer procedure, execution of the second computer procedure for another processing stage (I2; a2). An Independent claim is included for corresponding decoding equipment.

公开(公告)号：DE10111206A1

公开(公告)日：2002-09-19

申请号：DE10111206

申请日：2001-03-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： YANG BIN ,  WEBER MICHAEL

IPC: H04L1/00 ,  H04L27/00 ,  H04L27/32 ,  H04Q7/32

Abstract: A mobile radio receiver determines the modulation method for each received data burst (1, 2, 3, 4) by blind detection. The decoding (13) of the data bursts (1, 2, 3, 4) in a group of uniformly modulated data bursts is achieved by fixing which modulation method is detected for the vast majority of the data bursts of the group. The decoding (13) of the data bursts (1, 2, 3, 4) of the group is then achieved according to said majority selection.

公开(公告)号：DE10047135A1

公开(公告)日：2002-04-25

申请号：DE10047135

申请日：2000-09-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PAULUS STEFAN ,  AUBURGER ALBERT ,  HAINZ OSWALD ,  LANG DIETMAR ,  PETZ MARTIN ,  WEBER MICHAEL

IPC: H01L23/12 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L21/50 ,  H01L21/58 ,  H01L21/60

Abstract: Production of a component comprises preparing an integrated circuit (1) having an active main side (5) with contact pads (11) connected to electrically conducting humps (2); applying the circuit onto a substrate, the main side of the circuit facing the substrate; enclosing the circuit using a cast mass (3); and removing parts of the substrate from the circuit. Preferred Features: The step of applying the circuit to the substrate comprises connecting the humps to the substrate by thermal compressing or alloying. The substrate is removed by etching, delaminating, grinding or sawing.

公开(公告)号：DE102018106560B4

公开(公告)日：2025-01-02

申请号：DE102018106560

申请日：2018-03-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STOICESCU EMANUEL ,  BÖHM MATTHIAS ,  WEIDENAUER JANIS ,  JAHN STEFAN ,  LANDGRAF ERHARD ,  WEBER MICHAEL

IPC: H01L23/60 ,  B81B7/02 ,  B81C1/00 ,  G01L9/02 ,  H01L23/49

Abstract: Ein Drucksensorbauelement (2000), umfassend:einen Halbleiter-Die (120) des Drucksensorbauelements (2000);einen Hohlraum; undeinen Bonddraht (110) des Drucksensorbauelements (2000);wobei eine maximale vertikale Distanz (2012) zwischen einem Teil des Bonddrahts (110) und dem Halbleiter-Die (120) größer ist als eine minimale vertikale Distanz (2014) zwischen dem Halbleiter-Die (120) und einer Oberfläche eines Gels, das den Halbleiter-Die bedeckt, wobei der Hohlraum benachbart zu dem Gel angeordnet ist, das den Halbleiter-Die (120) bedeckt, wobei zumindest ein Abschnitt des Bonddrahts (110) innerhalb des Hohlraums angeordnet ist, wobei zumindest ein querender Abschnitt (CS) des Bonddrahts (110) sich über den Halbleiter-Die (120) erstreckt, und wobei eine Länge des querenden Abschnitts (CS) länger ist als die Hälfte einer Länge (SD) des Halbleiter-Dies (120).

公开(公告)号：DE102013104103B4

公开(公告)日：2019-03-14

申请号：DE102013104103

申请日：2013-04-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STEGERER FRANZ ,  ELIAN KLAUS ,  WEBER MICHAEL

IPC: H01F7/02 ,  G01R33/00

Abstract: Vorrichtung, die umfasst:einen Vormagnetisierungs-Feldgenerator, der ein Vormagnetisierungs-Magnetfeld für einen Magnetsensor (6) bereitstellt, wobei der Vormagnetisierungs-Feldgenerator aufweist:einen Körper, der ein magnetisches oder ein magnetisierbares Material umfasst;den Magnetsensor (6);ein Gehäuse (7), in dem der Magnetsensor aufgenommen ist;wobei der Körper einen ersten Vormagnetisierungs-Magnetteil (191, 193) und einen zweiten Vormagnetisierungs-Magnetteil (291,293) umfasst, undder erste Vormagnetisierungs-Magnetteil (191,193) eine erste Nut (134, 136) aufweist und der zweite Vormagnetisierungs-Magnetteil (291,293) eine zweite Nut (234,236) aufweist, wobei die erste Nut (134, 136) und die zweite Nut (234, 236) im zusammengebauten Körper eine Nut bilden, die eine Halterung für das Gehäuse bereitstellt, in der das Gehäuse auf eine formschlüssige Art in alle Richtungen gehalten ist.

公开(公告)号：DE10246101A1

公开(公告)日：2004-04-15

申请号：DE10246101

申请日：2002-10-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DAECHE FRANK ,  WEBER MICHAEL ,  DANGELMAIER JOCHEN ,  EHRLER GUENTER ,  MECKES ANDREAS

IPC: B81B7/00 ,  B81C3/00 ,  H01L23/04

Abstract: Production of a housing for a chip with a micro-mechanical structure used in the production of micro-mechanical switches comprises preparing a base having a first photolithographic structurable layer, structuring and further processing. Production of a housing for a chip with a micro-mechanical structure (22) comprises preparing a first base having a first photolithographic structurable layer, structuring the first layer to form a lid for the micro-mechanical structure, preparing a chip with the micro-mechanical structure arranged on a main surface of the chip between first contact elements, applying a second photolithographic structurable layer (28) on a partial region of the main surface of the chip, structuring the second layer to form a recess (32) surrounded by a wall (30) in the second layer and to expose the contact elements, joining the first base and the chip, removing the first base to obtain a chip with a hollow chamber, joining the second base and the chip so that the first contact elements are connected to the second base via a conducting structure, and removing the second base to expose the conducting structure.

公开(公告)号：DE102008016434A1

公开(公告)日：2008-12-24

申请号：DE102008016434

申请日：2008-03-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： NEUHAUS HOLGER ,  GUNZELMANN BERTRAM ,  WEBER MICHAEL

IPC: H04B17/00

Abstract: A device for calculating an overall frequency-offset estimate from a plurality of frequency-offset estimates includes a receiver unit configured to receive a plurality of data streams, a phase shift estimation unit configured to generate a phase shift quantity representative of a phase shift over a number of consecutive data samples in the respective data stream, and a phase shift processing unit coupled to the phase shift estimation unit and configured to calculate a quantity related to the signal-to-noise ratio associated with a data stream on the basis of the respective phase shift quantity. Further, the device includes a frequency-offset estimation unit configured to generate frequency-offset estimates associated with the respective data streams, and a combiner configured to calculate an overall frequency-offset estimate on the basis of the frequency-offset estimates and on the basis of the quantities related to the signal-to-noise ratios.

公开(公告)号：DE50113571D1

公开(公告)日：2008-03-20

申请号：DE50113571

申请日：2001-12-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER MICHAEL ,  YANG BIN

IPC: H04L27/00 ,  H04L1/00

公开(公告)号：DE10333841B4

公开(公告)日：2007-05-10

申请号：DE10333841

申请日：2003-07-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： THEUSS HORST ,  KIENDL HELMUT ,  WEBER MICHAEL

IPC: H01L23/50 ,  H01L21/56 ,  H01L21/60 ,  H01L23/31

Abstract: A semiconductor component and a method for its production in semiconductor chip size, can have a semiconductor chip, which has external contacts of the semiconductor component that are arranged in the manner of a flip-chip on its active upper side. The semiconductor chip can be encapsulated by a plastic compound at least on its rear side and its side edges. The outer contacts, which can be arranged on external contact connecting areas, can project from the active upper side.