公开(公告)号：GB2447158A

公开(公告)日：2008-09-03

申请号：GB0807714

申请日：2006-12-06

Applicant: INTEL CORP

Inventor： RAO VALLURI ,  DOROS THEODORE G ,  MA QING ,  SESHAN KRISHNA ,  WANG LI-PENG

IPC: H03H9/02 ,  H03H3/04 ,  H03H9/17 ,  H03H9/58

Abstract: Multiple FBARs may be manufactured on a single wafer and later diced. Ideally, all devices formed in a wafer would have the same resonance frequency. However, due to manufacturing variances, the frequency response of the FBAR devices may vary slightly across the wafer. An RF map may be created to determine zones (50, 52) over the wafer where FBARs in that zone all vary from a target frequency by a similar degree. A tuning layer (40) may be deposited over the wafer. Lithographically patterned features to the tuning layer based on the zones identified by the RF map may be used to correct the FBARs to a target resonance frequency with the FBARs still intact on the wafer.

公开(公告)号：DE60318283D1

公开(公告)日：2008-02-07

申请号：DE60318283

申请日：2003-07-24

Applicant: INTEL CORP

Inventor： WANG LI-PENG ,  BAR-SADEH EYAL ,  RAO VALLURI ,  HECK JOHN ,  MA QING ,  TRAN QUAN ,  TALALYEVSKY ALEXANDER ,  GINSBURG EYAL

IPC: H03H3/02 ,  H03H9/24 ,  H03H9/205 ,  H03H9/54 ,  H03H9/56

Abstract: A film bulk acoustic resonator filter (10) may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators (38) formed on the same membrane (35). Each of the film bulk acoustic resonators (38) may be formed from a common lower conductive layer which is defined to form the bottom electrode (32) of each film bulk acoustic resonator (38). A common top conductive layer may be defined to form each top electrode (36) of each film bulk acoustic resonator (38). A common piezoelectric film layer (34), that may or may not be patterned, forms a continuous or discontinuous film.

公开(公告)号：AU2003270751A1

公开(公告)日：2005-04-27

申请号：AU2003270751

申请日：2003-09-15

Applicant: INTEL CORP

Inventor： SU XING ,  BERLIN ANDREW A ,  CHAN SELENA ,  KIRCH STEVEN J ,  KOO TAE-WOONG ,  NEUBAUER GABI ,  RAO VALLURI ,  SUNDARARAJAN NARAYAN ,  YAMAKAWA MINEO

IPC: C12Q1/68

Abstract: The methods and apparatus disclosed herein concern nucleic acid sequencing by enhanced Raman spectroscopy. In certain embodiments of the invention, nucleotides are covalently attached to Raman labels before incorporation into a nucleic acid. In other embodiments, unlabeled nucleic acids are used. Exonuclease treatment of the nucleic acid results in the release of labeled or unlabeled nucleotides that are detected by Raman spectroscopy. In alternative embodiments of the invention, nucleotides released from a nucleic acid by exonuclease treatment are covalently cross-linked to nanoparticles and detected by surface enhanced Raman spectroscopy (SERS), surface enhanced resonance Raman spectroscopy (SERRS) and/or coherent anti-Stokes Raman spectroscopy (CARS). Other embodiments of the invention concern apparatus for nucleic acid sequencing.

公开(公告)号：AU2003212969A1

公开(公告)日：2003-10-13

申请号：AU2003212969

申请日：2003-02-07

Applicant: INTEL CORP

Inventor： WONG DANIEL ,  RAO VALLURI ,  HECK JOHN ,  MA QING ,  BERRY MICHELE

IPC: B81B7/00 ,  H01L23/10

Abstract: A MEMS device may be formed in a hermetic cavity by sealing a pair of semiconductor structures to one another, enclosing the MEMS device. The two structures may be coupled using surface mount techniques as one example, so that the temperatures utilized may be compatible with many MEMS applications. Electrical interconnection layers in one or the other of these structures may be utilized to allow electrical interconnections from the exterior world to the MEMS components within the cavity.

公开(公告)号：AU2002357317A1

公开(公告)日：2003-06-30

申请号：AU2002357317

申请日：2002-12-17

Applicant: INTEL CORP

Inventor： WANG LI-PENG ,  MA QING ,  RAO VALLURI

IPC: H03H3/02 ,  H03H9/17

Abstract: A film bulk acoustic resonator is formed on a substrate. The film bulk acoustic resonator includes a layer of piezoelectric material having a first surface proximate the substrate, and a second surface distal from the substrate. The first conductive layer deposited on the first surface of the piezoelectric material includes a first portion having a surface on a different plane than a surface associated with a second portion.

公开(公告)号：MY138751A

公开(公告)日：2009-07-31

申请号：MYPI20030546

申请日：2003-02-18

Applicant: INTEL CORP

Inventor： MA QING ,  RAO VALLURI ,  HECK JOHN ,  WONG DANIEL ,  BERRY MICHELE

IPC: H05K5/06 ,  B81B7/00 ,  H01L23/10

Abstract: A MEMS DEVICE (14) MAY BE FORMED IN A HERMETIC CAVITY (42) BY SEALING A PAIR OF SEMICONDUCTOR STRUCTURES (22. 32) TO ONE ANOTHER, ENCLOSING THE MEMS DEVICE (12). THE TWO STRUCTURES (22. 32) MAY BE COUPLED USING SURFACE MOUNT TECHNIQUES AS ONE EXAMPLE. SO THAT THE TEMPERATURES UTILIZED MAY BE COMPATIBLE WITH MANY MEMS APPLICATIONS. ELECTRICAL INTERCONNECTION LAYERS (40) IN ONE OR THE OTHER OF THESE STRUCTURES MAY BE UTILIZED TO ALLOW ELECTRICAL INTERCONNECTIONS FROM THE EXTERIOR WORLD TO THE MEMS COMPONENTS (14) WITHIN THE CAVITY (42).

公开(公告)号：DE60318283T2

公开(公告)日：2008-12-11

申请号：DE60318283

申请日：2003-07-24

Applicant: INTEL CORP

Inventor： WANG LI-PENG ,  BAR-SADEH EYAL ,  RAO VALLURI ,  HECK JOHN ,  MA QING ,  TRAN QUAN ,  TALALYEVSKY ALEXANDER ,  GINSBURG EYAL

IPC: H03H3/02 ,  H03H9/24 ,  H03H9/205 ,  H03H9/54 ,  H03H9/56

Abstract: A film bulk acoustic resonator filter (10) may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators (38) formed on the same membrane (35). Each of the film bulk acoustic resonators (38) may be formed from a common lower conductive layer which is defined to form the bottom electrode (32) of each film bulk acoustic resonator (38). A common top conductive layer may be defined to form each top electrode (36) of each film bulk acoustic resonator (38). A common piezoelectric film layer (34), that may or may not be patterned, forms a continuous or discontinuous film.

公开(公告)号：AT407443T

公开(公告)日：2008-09-15

申请号：AT03792002

申请日：2003-08-28

Applicant: INTEL CORP

Inventor： MA QING ,  RAVI KRAMADHATI ,  RAO VALLURI

IPC: H01H11/00 ,  H01H59/00 ,  H01H1/04 ,  H01P1/12

Abstract: A switch structure having multiple contact surfaces that may contact each other. One or more of the contact surfaces may be coated with a resilient material such as diamond.

公开(公告)号：DE60225157D1

公开(公告)日：2008-04-03

申请号：DE60225157

申请日：2002-09-05

Applicant: INTEL CORP

Inventor： RAO VALLURI ,  NEUBAUER GABI ,  KIRCH STEVEN ,  YAMAKAWA MINEO ,  BERLIN ANDREW

IPC: C12Q1/68 ,  B01L3/00 ,  C07H21/02 ,  C07H21/04 ,  C12M1/00 ,  C12M1/34 ,  C12N15/00 ,  C12N15/09 ,  C12P19/34 ,  G01J3/42 ,  G01J3/427 ,  G01J3/44 ,  G01N21/65 ,  G01N33/53 ,  G01N33/566

Abstract: The methods, compositions and apparatus disclosed herein are of use for nucleic acid sequence determination. The methods involve isolation of one or more nucleic acid template molecules and polymerization of a nascent complementary strand of nucleic acid, using a DNA or RNA polymerase or similar synthetic reagent. As the nascent strand is extended one nucleotide at a time, the disappearance of nucleotide precursors from solution is monitored by Raman spectroscopy or FRET. The nucleic acid sequence of the nascent strand, and the complementary sequence of the template strand, may be determined by tracking the order of incorporation of nucleotide precursors during the polymerization reaction. Certain embodiments concern apparatus comprising a reaction chamber and detection unit, of use in practicing the claimed methods. The methods, compositions and apparatus are of use in sequencing very long nucleic acid templates in a single sequencing reaction.

公开(公告)号：HK1060660A1

公开(公告)日：2004-08-13

申请号：HK04103550

申请日：2004-05-19

Applicant: INTEL CORP

Inventor： WANG LI-PENG ,  BAR-SADEH EYAL ,  RAO VALLURI ,  HECK JOHN ,  MA QING ,  TRAN QUAN ,  TALALYEVSKIY ALEXANDER ,  GINSBURG EYAL

IPC: H03H9/24 ,  H03H3/02 ,  H03H9/56 ,  H03H

Abstract: A film bulk acoustic resonator filter (10) may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators (38) formed on the same membrane (35). Each of the film bulk acoustic resonators (38) may be formed from a common lower conductive layer which is defined to form the bottom electrode (32) of each film bulk acoustic resonator (38). A common top conductive layer may be defined to form each top electrode (36) of each film bulk acoustic resonator (38). A common piezoelectric film layer (34), that may or may not be patterned, forms a continuous or discontinuous film.