公开(公告)号：AU2002318307A1

公开(公告)日：2003-01-29

申请号：AU2002318307

申请日：2002-07-11

Applicant: LAM RES CORP

Inventor： BOYD JOHN M ,  MIKHAYLICH KATRINA A ,  RAVKIN MIKE

IPC: H01L21/304 ,  H01L21/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/321

Abstract: A single substrate cleaning apparatus that prevents galvanic corrosion is provided. The apparatus includes a spindle configured to rotatably support a substrate. A moveable dispense arm disposed over the spindle is included. The dispense arm supports a first supply line and a second supply line. The first supply line has a first nozzle affixed to an end of the first supply line, and the second supply line has a second nozzle affixed to an end of the second supply line. The first nozzle is positioned behind the second nozzle such that a fluid dispensed from the second nozzle is dried by application of a fluid simultaneously dispensed from the first nozzle in manner that protects the substrate from galvanic corrosion.

公开(公告)号：MY157906A

公开(公告)日：2016-08-15

申请号：MYPI20090659

申请日：2007-08-17

Applicant: LAM RES CORP

Inventor： ALEXANDER YOON HYUNGSUK ,  BOYD JOHN M ,  YEZDI DORDI ,  REDEKER FRITZ C

IPC: B05D5/12

公开(公告)号：MY137807A

公开(公告)日：2009-03-31

申请号：MYPI20045236

申请日：2004-12-20

Applicant: LAM RES CORP

Inventor： BOYD JOHN M ,  ORBOCK MICHAEL L ,  REDEKER FRED C

IPC: H01L21/00

Abstract: A wafer preparation method is provided for producing a wet region and then a corresponding dry region on the wafer. Brushing produces the wet region on the wafer. As the brushing moves in a selected scan operation across the wafer, a generating operation forms a meniscus that follows the brushing and dries the wet region. The generating operation produces the meniscus at least partially surrounding the wet region scrubbed by the scrubbing. The controlled meniscus is formed by applying fluid to the surface of the wafer and simultaneously removing the fluid. The scan operations may be selected so the brushing scrubs the wet region and then the meniscus forms the dry region where the scrubbing took place. The scan operations include a radial scan, a linear scan, a spiral scan and a raster scan.

公开(公告)号：MY135489A

公开(公告)日：2008-04-30

申请号：MYPI20042488

申请日：2004-06-24

Applicant: LAM RES CORP

Inventor： BOYD JOHN M ,  LARIOS JOHN M DE ,  RAVKIN MICHAEL ,  REDEKER FRED C

IPC: G03F7/20 ,  H01L21/00

Abstract: A SYSTEM AND METHOD FOR PROCESSING A WAFER INCLUDES APPLYING A PROCESS TO THE WAFER (108) (OPERATION 1405). THE PROCESS BEING SUPPORTED BY A SURFACE TENSION GRADIENT DEVICE (100,100-1,100-2,100-3,100-4,100-5, 1200, 1200'').A RESULT OF THE PROCESS IS MONITORED (OPERATION 1410).THE MONITORED RESULT IS OUTPUT (OPERATION 1415).(FIG 12A)

公开(公告)号：AU2003220308A1

公开(公告)日：2003-10-20

申请号：AU2003220308

申请日：2003-03-13

Applicant: LAM RES CORP

Inventor： BOYD JOHN M ,  MIKHAYLICH KATRINA

IPC: B08B3/10 ,  B08B3/12 ,  B08B7/04

公开(公告)号：AU7793001A

公开(公告)日：2002-03-04

申请号：AU7793001

申请日：2001-07-19

Applicant: LAM RES CORP

Inventor： SALDANA MIGUEL A ,  BOYD JOHN M ,  GOTKIS YEHIEL ,  OWCZARZ ALEKSANDER A

IPC: B24B37/20 ,  B24B53/007 ,  B24B53/017 ,  H01L21/304 ,  H01L21/306

Abstract: A chemical mechanical polishing (CMP) system is provided. A carrier has a top surface and a bottom region. The top surface of the carrier is designed to hold and rotate a wafer having a one or more formed layers to be prepared. A preparation head is also included and is designed to be applied to at least a portion of the wafer that is less than an entire portion of the surface of the wafer. Preferably, the preparation head and the carrier are configured to rotate in opposite directions. In addition, the preparation head is further configured to oscillate while linearly moving from one of the direction of a center of the wafer to an edge of the wafer and from the edge of the wafer to the center of the wafer so as to facilitate precision controlled removal of material from the formed layers of the wafer.

公开(公告)号：MY147290A

公开(公告)日：2012-11-30

申请号：MYPI20111318

申请日：2007-03-27

Applicant: LAM RES CORP

Inventor： BOYD JOHN M ,  REDEKER FRITZ C ,  YEZDI DORDI ,  MICHAEL RAVKIN ,  JOHN DE LARIOS

IPC: H01L21/302

Abstract: A PROXIMITY HEAD AND ASSOCIATED METHOD OF USE IS PROVIDED FOR PERFORMING CONFINED AREA PLANARIZATION OF A SEMICONDUCTOR WAFER (223). THE PROXIMITY HEAD INCLUDES A CHAMBER (215) DEFINED TO MAINTAIN AN ELECTROLYTE SOLUTION (211). A CATHODE (213) IS DISPOSED WITHIN THE CHAMBER IN EXPOSURE TO THE ELECTROLYTE SOLUTION. A CATION EXCHANGE MEMBRANE (221) IS DISPOSED OVER A LOWER OPENING OF THE CHAMBER. A TOP SURFACE OF THE CATION EXCHANGE MEMBRANE IS IN DIRECT EXPOSURE TO THE ELECTROLYTE SOLUTION TO BE MAINTAINED WITHIN THE CHAMBER. A FLUID SUPPLY CHANNEL (227) IS DEFINED TO EXPEL FLUID AT A LOCATION ADJACENT TO A LOWER SURFACE OF THE CATION EXCHANGE MEMBRANE. A VACUUM CHANNEL (225) IS DEFINED TO PROVIDE SUCTION AT A LOCATION ADJACENT TO THE LOWER SURFACE OF THE CATION EXCHANGE MEMBRANE, SUCH THAT THE FLUID TO BE EXPELLED FROM THE FLUID SUPPLY CHANNEL IS MADE TO FLOW OVER THE LOWER SURFACE OF THE CATION EXCHANGE MEMBRANE.

公开(公告)号：MY136159A

公开(公告)日：2008-08-29

申请号：MYPI20042527

申请日：2004-06-25

Applicant: LAM RES CORP

Inventor： RAVKIN MIKE ,  BOYD JOHN M ,  DORDI YEZDI N ,  REDEKER FRED C ,  LARIOS JOHN M DE

IPC: C25D5/02 ,  C25D5/22 ,  C25D7/12 ,  H01L21/00 ,  H01L21/288

Abstract: AN ELECTROPLATING APPARATUS (100) FOR DEPOSITING A METALLIC LAYER ON A SURFACE OF A WAFER (104) IS PROVIDED. IN ONE EXAMPLE, A PROXIMITY HEAD (102) CAPABLE OF BEING ELECTRICALLY CHARGED AS AN ANODE IS PLACED IN CLOSE PROXIMITY TO THE SURFACE OF THE WAFER (104).A PLATING FLUID IS PROVIDED BETWEEN THE WAFER (104) AND THE PROXIMITY HEAD (102) TO CREATE LOCALIZED METALLIC PLATING.

公开(公告)号：SG118433A1

公开(公告)日：2006-01-27

申请号：SG200504761

申请日：2005-06-28

Applicant: LAM RES CORP

Inventor： DORDI YEZDI N ,  REDEKER FRED C ,  BOYD JOHN M ,  ROBERT MARASCHIN ,  CARL WOODS

Abstract: An electroplating apparatus (100) for electroplating a surface of a wafer (W) is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head (110) capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.

公开(公告)号：AU4953501A

公开(公告)日：2001-10-15

申请号：AU4953501

申请日：2001-03-28

Applicant: LAM RES CORP

Inventor： BOYD JOHN M

IPC: B24B57/04 ,  B24B21/00 ,  B24B21/18 ,  B24B37/04 ,  B24D3/28 ,  B24D11/00 ,  B24D18/00 ,  H01L21/304

Abstract: Methods and apparatus are provided for combining the manufacturing of a fixed-abrasive substrate and the chemical mechanical planarization of semiconductor wafers using a single process path.