公开(公告)号：IL178053A

公开(公告)日：2010-06-30

申请号：IL17805306

申请日：2006-09-13

Applicant: LAM RES CORP ,  HOWALD ARTHUR M ,  LOHOKARE SHRIKANT P ,  III ANDREW D BAILEY ,  KIM YUNSANG

Inventor： HOWALD ARTHUR M ,  LOHOKARE SHRIKANT P ,  III ANDREW D BAILEY ,  KIM YUNSANG

IPC: H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/44 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L29/24 ,  H01L29/40 ,  H01L33/00

Abstract: A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species deposited on the inner surface. A cleaning chemistry is injected into the processing chamber. The cleaning chemistry can be reactive with a second one of the species to convert the second species to the first species. The volatilized first species can also be output from the processing chamber. A system for cleaning the process chamber is also described.

公开(公告)号：SG132675A1

公开(公告)日：2007-06-28

申请号：SG2007035090

申请日：2004-12-30

Applicant: LAM RES CORP

Inventor： III ANDREW D BAILEY ,  LOHOKARE SHRIKANT P ,  HOWALD ARTHUR M ,  KIM YUNSANG

IPC: H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/44 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L29/24 ,  H01L29/40 ,  H01L33/00

Abstract: A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species deposited on the inner surface. A cleaning chemistry is injected into the processing chamber. The cleaning chemistry can be reactive with a second one of the species to convert the second species to the first species. The volatilized first species can also be output from the processing chamber. A system for cleaning the process chamber is also described.

公开(公告)号：MY169549A

公开(公告)日：2019-04-22

申请号：MYPI20080817

申请日：2006-09-26

Applicant: LAM RES CORP

Inventor： BAILEY III ANDREW D ,  KIM YUNSANG

Abstract: Improved mechanisms of removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and etch byproducts on substrate backside and chamber interior is provided to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. An exemplary plasma etch processing chamber configured to clean a bevel edge of a substrate (150) is provided. The chamber includes a bottom edge electrode (120) surrounding a substrate support (140) in the plasma processing chamber, wherein the substrate support is configured to receive the substrate and the bottom edge electrode and the substrate support are electrically isolated from each other by a bottom dielectric ring (121). The chamber also includes a top edge electrode (110) surrounding a gas distribution plate (160) opposing the substrate support, wherein the top edge electrode and the gas distribution plate are electrically isolated from each other by a top dielectric ring (111), and the top edge electrode and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate.

公开(公告)号：SG10201605996VA

公开(公告)日：2016-09-29

申请号：SG10201605996V

申请日：2009-01-16

Applicant: LAM RES CORP

Inventor： FANG TONY ,  KIM YUNSANG ,  BAILEY ANDREW D ,  RIGOUTAT OLIVIER

公开(公告)号：SG10201405258YA

公开(公告)日：2014-10-30

申请号：SG10201405258Y

申请日：2010-08-26

Applicant: LAM RES CORP

Inventor： JUCO ELLER Y ,  SHIN NEUNGHO ,  KIM YUNSANG ,  BAILEY ANDREW

Abstract: Methods for controlling bevel etch rate of a substrate during plasma processing within a processing chamber includes securing the substrate on a lower electrode within the processing chamber. A power source is provided. A gas mixture is flowed into the processing chamber. A first match arrangement coupled to an upper electrode is adjusted to control current flowing through the upper electrode to change the upper electrode from a grounded state to a floating state. A second match arrangement coupled to a top ring electrode is adjusted to control current flowing through the top ring electrode so as to control plasma formed above a top edge of the substrate. An extension of the upper electrode is lowered during plasma processing so as to minimize a gap between the extension of the upper electrode and the substrate received on the lower electrode, such that the gap is incapable of supporting plasma formed in the processing chamber.

公开(公告)号：SG2014013858A

公开(公告)日：2014-07-30

申请号：SG2014013858

申请日：2008-01-24

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  SEXTON GREGORY ,  KIM YUNSANG ,  KENNEDY WILLIAM S

Abstract: A device for cleaning a bevel edge of a semiconductor substrate. The device includes: a lower support having a cylindrical top portion; a lower plasma-exclusion-zone (PEZ) ring surrounding the outer edge of the top portion and adapted to support the substrate; an upper dielectric component opposing the lower support and having a cylindrical bottom portion; an upper PEZ ring surrounding the outer edge of the bottom portion and opposing the lower PEZ ring; and at least one radiofrequency (RF) power source operative to energize process gas into plasma in an annular space defined by the upper and lower PEZ rings, wherein the annular space encloses the bevel edge.

公开(公告)号：SG189223A1

公开(公告)日：2013-05-31

申请号：SG2013024435

申请日：2011-10-19

Applicant: LAM RES CORP

Inventor： SHIN NEUNGHO ,  CHUNG PATRICK ,  KIM YUNSANG

Abstract: A method of film deposition using localized plasma to protect bevel edge of a wafer in a plasma chamber. The method includes adjusting an electrode gap between a movable electrode and a stationary electrode, the wafer being disposed on one of the movable electrode and the stationary electrode, to a gap distance configured to prevent plasma formation over a center portion of the wafer, the gap distance also dimensioned such that a plasma-sustainable condition around the bevel edge of the wafer is formed after the adjusting. The method also includes flowing deposition gas into the plasma chamber. The method includes maintaining, using a heater, a chuck temperature that is configured to facilitate film deposition on the bevel edge. The method further includes generating the localized plasma from the deposition gas for depositing a film on the bevel edge.

公开(公告)号：SG188843A1

公开(公告)日：2013-04-30

申请号：SG2013015847

申请日：2009-03-10

Applicant: LAM RES CORP

Inventor： FANG TONG ,  KIM YUNSANG ,  KIM KEECHAN ,  STOJAKOVIC GEORGE

Abstract: CONTROL OF BEVEL ETCH FILM PROFILE USING PLASMA EXCLUSION ZONE RINGS LARGER THAN THE WAFER DIAMETERA method of cleaning a bevel edge of a semiconductor substrate is provided. A semiconductor substrate is placed on a substrate support in a reaction chamber of a plasma processing apparatus. The substrate has a dielectric layer overlying a top surface and a bevel edge of the substrate, the layer extending above and below an apex of the bevel edge. A process gas is introduced into the reaction chamber and energized into a plasma. The bevel edge is cleaned with the plasma so as to remove the layer below the apex without removing all of the layer above the apex.FIG. 1

公开(公告)号：SG186015A1

公开(公告)日：2012-12-28

申请号：SG2012085171

申请日：2008-11-13

Applicant: LAM RES CORP

Inventor： BAILEY III ANDREW D ,  KIM YUNSANG

Abstract: 18 OF THE DISCLOSUREThe various embodiments described in the specification provide improved mechanisms of removal of unwanted deposits on the bevel edge to improve process yield. The embodiments provide apparatus and methods of treating the bevel edge of a copper plated substrate to convert the copper at the bevel edge to a copper compound that can be wet etched with a fluid at a high etch selectivity in comparison to copper. In one embodiment, the wet etch of the copper compound at high selectivity to copper allows the removal of the non-volatile copper at substrate bevel edge in a wet etch processing chamber. The plasma treatment at bevel edge allows the copper at bevel edge to be removed at precise spatial control to about 2 mm or below, such as about 1 mm, about 0.5 mm or about 0.25 mm, to the very edge of substrate. In addition, the apparatus and methods described above for bevel edge copper removal do not have the problems of copper etching fluid being splashed on the device regions to cause defects and thinning of copper films. Therefore, device yield can be greatly improved.Figure 2A

公开(公告)号：SG178375A1

公开(公告)日：2012-03-29

申请号：SG2012009668

申请日：2010-08-26

Applicant: LAM RES CORP

Inventor： JUCO ELLER Y ,  SHIN NEUNGHO ,  KIM YUNSANG ,  BAILEY ANDREW

Abstract: An arrangement for controlling bevel etch rate during plasma processing within a processing chamber. The arrangement includes a power source and a gas distribution system. The arrangement also includes a lower electrode, which is configured at least for supporting a substrate. The arrangement further includes a top ring electrode positioned above the substrate and a bottom ring electrode positioned below the substrate. The arrangement yet also includes a first match arrangement coupled to the top ring electrode and configured at least for controlling current flowing through the top ring electrode to control amount of plasma available for etching at least a part of the substrate top edge. The arrangement yet further includes a second match arrangement configured to control the current flowing through the bottom ring electrode to control amount of plasma available for at least etching at least a part of the substrate bottom edge.