公开(公告)号：SG10201602780VA

公开(公告)日：2016-05-30

申请号：SG10201602780V

申请日：2012-04-10

Applicant: LAM RES CORP

Inventor： HOLLAND JOHN PATRICK ,  VENTZEK PETER L G ,  SINGH HARMEET ,  SHINAGAWA JUN ,  KOSHIISHI AKIRA

Abstract: PROBLEM TO BE SOLVED: To improve separate control of the ion concentration and the radical concentration in plasma.SOLUTION: A semiconductor substrate processing system 300 includes a chamber 301, a substrate support 303, and a separate plasma generation chamber 355. The system also includes a plurality of fluid transmission pathways 316 fluidly connecting the plasma generation chamber 355 to the chamber 301. The system further includes an electron beam source 363 for injecting electrons into the processing chamber to control an electron energy distribution within the processing chamber so as to in turn control an ion-to-radical density ratio within the processing chamber. The electron beam source 363 is defined to transmit an electron beam through the processing chamber above and across the substrate support 303.SELECTED DRAWING: Figure 3A

公开(公告)号：SG10201502438RA

公开(公告)日：2015-10-29

申请号：SG10201502438R

申请日：2015-03-27

Applicant: LAM RES CORP

Inventor： TAN SAMANTHA S H ,  YANG WENBING ,  SHEN MEIHUA ,  JANEK RICHARD P ,  MARKS JEFFREY ,  SINGH HARMEET ,  LILL THORSTEN

Abstract: A method for etching a stack with at least one metal layer in one or more cycles is provided. An initiation step is preformed, transforming part of the at least one metal layer into metal oxide, metal halide, or lattice damaged metallic sites. A reactive step is performed providing one or more cycles, where each cycle comprises providing an organic solvent vapor to form a solvated metal, metal halide, or metal oxide state and providing an organic ligand solvent to form volatile organometallic compounds.

公开(公告)号：SG10201401254VA

公开(公告)日：2014-11-27

申请号：SG10201401254V

申请日：2014-04-04

Applicant: LAM RES CORP

Inventor： PATERSON ALEX ,  SINGH HARMEET ,  MARSH RICHARD A ,  LILL THORSTEN ,  VAHEDI VAHID ,  WU YING ,  SRIRAMAN SARAVANAPRIYAN

Abstract: The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid assembly is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers. The plasma grid assembly may include one or more plasma grids having slots of a particular aspect ratio, which allow certain species to pass through from the upper sub-chamber to the lower sub-chamber. Where multiple plasma grids are used, one or more of the grids may be movable, allowing for tenability of the plasma conditions in at least the lower sub-chamber. In some cases, an electron-ion plasma is generated in the upper sub-chamber. Electrons that make it through the grid to the lower sub-chamber are cooled as they pass through. In some cases, this results in an ion-ion plasma in the lower sub-chamber.

公开(公告)号：SG10201708121VA

公开(公告)日：2017-11-29

申请号：SG10201708121V

申请日：2014-04-04

Applicant: LAM RES CORP

Inventor： PATERSON ALEX ,  SINGH HARMEET ,  MARSH RICHARD A ,  LILL THORSTEN ,  VAHEDI VAHID ,  WU YING ,  SRIRAMAN SARAVANAPRIYAN

Abstract: The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid assembly is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers. The plasma grid assembly may include one or more plasma grids having slots of a particular aspect ratio, which allow certain species to pass through from the upper sub-chamber to the lower sub-chamber. Where multiple plasma grids are used, one or more of the grids may be movable, allowing for tenability of the plasma conditions in at least the lower sub-chamber. In some cases, an electron-ion plasma is generated in the upper sub-chamber. Electrons that make it through the grid to the lower sub-chamber are cooled as they pass through. In some cases, this results in an ion-ion plasma in the lower sub-chamber.

公开(公告)号：SG10201605726PA

公开(公告)日：2016-09-29

申请号：SG10201605726P

申请日：2012-07-11

Applicant: LAM RES CORP

Inventor： SINGH HARMEET

公开(公告)号：SG10201509235TA

公开(公告)日：2015-12-30

申请号：SG10201509235T

申请日：2011-10-31

Applicant: LAM RES CORP

Inventor： SINGH HARMEET

Abstract: A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar heater zone includes one or more heater element made of an insulator-conductor composite. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic having planar heater zones, power supply lines, power return lines and vias.

公开(公告)号：SG10201403639PA

公开(公告)日：2015-02-27

申请号：SG10201403639P

申请日：2014-06-26

Applicant: LAM RES CORP

Inventor： SINGH HARMEET ,  PATERSON ALEX

公开(公告)号：SG10201403177UA

公开(公告)日：2015-01-29

申请号：SG10201403177U

申请日：2014-06-12

Applicant: LAM RES CORP

Inventor： LILL THORSTEN ,  SINGH HARMEET ,  PATERSON ALEX ,  KAMARTHY GOWRI

Abstract: CONTROLLING ION ENERGY WITHIN A PLASMA Systems and methods controlling ion energy within a plasma chamber are described. One of the systems includes an upper electrode coupled to a sinusoidal RF generator for receiving a sinusoidal signal and a nonsinusoidal RF generator for generating a nonsinusoidal signal. The system further includes a power amplifier coupled to the nonsinusoidal RF generator. The power amplifier is used for amplifying the nonsinusoidal signal to generate an amplified signal. The system includes a filter coupled to the power amplifier. The filter is used for filtering the amplified signal using a filtering signal to generate a filtered signal. The system includes a chuck coupled to the filter. The chuck faces at least a portion of the upper electrode and includes a lower electrode. The lower electrode is used for receiving the filtered signal to facilitate achieving ion energy at the chuck to be between a lower threshold and an upper threshold. Fig. lA 45

公开(公告)号：SG11201404493YA

公开(公告)日：2014-10-30

申请号：SG11201404493Y

申请日：2013-02-07

Applicant: LAM RES CORP

Inventor： VALCORE JOHN ,  SINGH HARMEET ,  LYNDAKER BRADFORD J

IPC: H05H1/24 ,  H05H1/46

公开(公告)号：SG193943A1

公开(公告)日：2013-11-29

申请号：SG2013071790

申请日：2012-04-10

Applicant: LAM RES CORP

Inventor： HOLLAND JOHN PATRICK ,  VENTZEK PETER L G ,  SINGH HARMEET ,  SHINAGAWA JUN ,  KOSHIISHI AKIRA

Abstract: A semiconductor substrate processing system includes a processing chamber, a substrate support, and a separate plasma chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber. The plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber. The system further includes an electron injection device for injecting electrons into the processing chamber to control an electron energy distribution within the processing chamber so as to in turn control an ion.to. radical density ratio within the processing chamber. In one embodiment, an electron beam source is defined to transmit an electron beam through the processing chamber above and across the substrate support.