Abstract:
The invention relates to the production of semiconductor chips (1) using thin-film technology, in which a sequence of active layers is applied to a growth substrate (3) and a structured reflective electrically conductive contact material layer (4) is subsequently configured on said sequence of layers. The sequence of active layers is then structured to form active stacks (2) of layers, in such a way that a reflective electrically conductive contact material layer (4) is present on each active stack (2) of layers. A flexible electrically conductive film (6) is then applied to the contact material layers (4) to act as an auxiliary carrier layer and the growth substrate is removed.
Abstract:
The invention relates to a method for the production of a plurality of opto-electronic semiconductor chips which respectively comprise a plurality of structural elements with respectively at least one semiconductor layer. According to the inventive method, a chip composite base is produced, said base comprising a substrate and an epitaxial surface. A mask material layer is formed on the epitaxial surface, consisting of a plurality of windows whereby the average spread of most windows is less than or equal to 1 µm. The mask material is selected in such a way that a semiconductor material of the semiconductor layer, which is grown in a later step of the inventive method, cannot grow on said material or grows in a substantially worse manner in comparison with the epitaxial surface. Subsequently, semiconductor layers are deposited on the epitaxial surface in an essentially simultaneous manner on areas located inside the windows.In another step of the inventive method, the chip composite base with deposited material is separated to form semiconductor chips. The invention also relates to an optoelectronic semiconductor element produced according to said method.
Abstract:
The invention relates to a lighting module comprising at least one thin-film light-emitting diode chip, which is placed on a chip support provided with electrical supply conductors and which has a first and a second electrical connection side and as well as an epitaxially produced semiconductor layered construction. The semiconductor layered construction has an n-conducting semiconductor layer, a p-conducting semiconductor layer, and a region, which is situated between these two semiconductor layers, produces electromagnetic radiation, and which is placed on a support. In addition, the lighting module comprises a reflective layer. This reflective layer is located on a main surface facing the support and reflects at least a portion of the electromagnetic radiation, which is produced in the semiconductor layered construction, back into said the semiconductor layered construction. The semiconductor layered construction comprises at least one semiconductor layer having at least one microstructured rough surface. The decoupling surface of the thin-film light-emitting diode is defined, in essence, by a main surface facing away from the reflective layer and does not contain housing material such as potting material or encapsulating material.
Abstract:
The invention relates to a method for the production of a plurality of opto-electronic semiconductor chips respectively comprising a plurality of structural elements respectively consisting of at least one semiconductor layer. According to the inventive method, a chip composite base is produced, said base comprising a substrate and an epitaxial surface. A non-closed mask material layer is grown on the epitaxial surface. The mask material layer consists of a plurality of statistically distributed windows having various forms and/or opening surfaces. A masking material is selected in such a way that a semiconductor material of the semiconductor layer, which is grown in a later step of the inventive method, cannot grow on said material or grows in a substantially worse manner in comparison with the epitaxial surface. Subsequently, semiconductor layers are deposited on the epitaxial surface in an essentially simultaneous manner on areas located inside the windows. In another step of the inventive method, the chip composite base with deposited material is separated to form semiconductor chips. The invention also relates to an optoelectronic semiconductor element produced according to said method.
Abstract:
The invention relates to a radiation-emitting semiconductor component with an improved radiation yield and to a method for producing the same. The semiconductor element has a multilayer structure (2) with an active layer (3) for generating the radiation within the multilayer structure (2) and a window (1) with a first and a second primary surface. The multilayer structure adjoins the first primary surface (5) of the window (1). At least one recess is formed in the window (1), starting from the second primary surface (6), for increasing the radiation yield. The recess preferably has a trapezoidal cross-section, which tapers towards the first primary surface (5) and can be produced, for example, by sawing into the window.
Abstract:
The method involves initializing a semiconductor layer sequence (10) with an active area (20), where the active area is suitable to send electromagnetic radiation in the operation. A layer of metal or metalloid oxide or nitride is applied on a surface (110) of the semiconductor layer sequence by an ion-assisted application process. The metal or metalloid oxide comprises from niobium pentaoxide, hafnium oxide, aluminum oxide, silicon dioxide, titanium dioxide, tantalum pentoxide, zirconium dioxide. An independent claim is also included for opto-electronic component.