METHOD FOR THE PRODUCTION OF A PLURALITY OF OPTO-ELECTRONIC SEMICONDUCTOR CHIPS AND OPTO-ELECTRONIC SEMICONDUCTOR CHIP
    22.
    发明申请
    METHOD FOR THE PRODUCTION OF A PLURALITY OF OPTO-ELECTRONIC SEMICONDUCTOR CHIPS AND OPTO-ELECTRONIC SEMICONDUCTOR CHIP 审中-公开
    方法制造光电子半导体芯片和光电子半导体芯片,各种

    公开(公告)号:WO2005013379A3

    公开(公告)日:2005-03-31

    申请号:PCT/DE2004001593

    申请日:2004-07-22

    Inventor: HAERLE VOLKER

    Abstract: The invention relates to a method for the production of a plurality of opto-electronic semiconductor chips which respectively comprise a plurality of structural elements with respectively at least one semiconductor layer. According to the inventive method, a chip composite base is produced, said base comprising a substrate and an epitaxial surface. A mask material layer is formed on the epitaxial surface, consisting of a plurality of windows whereby the average spread of most windows is less than or equal to 1 µm. The mask material is selected in such a way that a semiconductor material of the semiconductor layer, which is grown in a later step of the inventive method, cannot grow on said material or grows in a substantially worse manner in comparison with the epitaxial surface. Subsequently, semiconductor layers are deposited on the epitaxial surface in an essentially simultaneous manner on areas located inside the windows.In another step of the inventive method, the chip composite base with deposited material is separated to form semiconductor chips. The invention also relates to an optoelectronic semiconductor element produced according to said method.

    Abstract translation: 本发明涉及一种用于生产各种具有多个结构构件的每一个具有至少一个半导体层的光电子半导体芯片的每个。 在该方法中,提供了一种复合体基板芯片,其包括衬底和生长的表面。 在生长表面上,形成掩模材料层具有小于或等于1微米最的平均尺寸的多个的窗口。 在这种情况下,掩模材料被选择为使得在稍后的处理的步骤aufzuwachsendes所述半导体层的所述半导体材料上基本上都不说,或相比于生长表面可以长差得多。 随后,将生长面的半导体层同时处于基本上位于沉积在窗口区域内。 另一步骤是用材料的芯片复合体基板施加到半导体芯片的分离。 本发明还涉及根据该方法光电子半导体器件所产生的材料。

    LIGHTING MODULE BASED ON LIGHT-EMITTING DIODES AND METHOD FOR THE PRODUCTION THEREOF
    23.
    发明申请
    LIGHTING MODULE BASED ON LIGHT-EMITTING DIODES AND METHOD FOR THE PRODUCTION THEREOF 审中-公开
    照明模块上的LED为基础的方法及其

    公开(公告)号:WO2004077578A3

    公开(公告)日:2005-07-21

    申请号:PCT/DE2004000040

    申请日:2004-01-15

    Abstract: The invention relates to a lighting module comprising at least one thin-film light-emitting diode chip, which is placed on a chip support provided with electrical supply conductors and which has a first and a second electrical connection side and as well as an epitaxially produced semiconductor layered construction. The semiconductor layered construction has an n-conducting semiconductor layer, a p-conducting semiconductor layer, and a region, which is situated between these two semiconductor layers, produces electromagnetic radiation, and which is placed on a support. In addition, the lighting module comprises a reflective layer. This reflective layer is located on a main surface facing the support and reflects at least a portion of the electromagnetic radiation, which is produced in the semiconductor layered construction, back into said the semiconductor layered construction. The semiconductor layered construction comprises at least one semiconductor layer having at least one microstructured rough surface. The decoupling surface of the thin-film light-emitting diode is defined, in essence, by a main surface facing away from the reflective layer and does not contain housing material such as potting material or encapsulating material.

    Abstract translation: 本发明涉及一种照明模块,包括至少一个具有一种半导体芯片载体具有第一UNE的第二电端子侧和外延制造的半导体层序列淀积薄膜发光二极管芯片电连接。 半导体层序列具有n型半导体层,p型半导体层和设置在这两个半导体层之间的电磁辐射产生部分和设置在载体上。 此外,它有一个朝向正对支撑主表面上的反射层,其反射回在它的半导体层序列中产生的电磁辐射的至少一部分。 半导体层序列具有至少一个微结构化的,粗糙的表面的至少一个半导体层。 该薄膜发光芯片的输出表面基本上由面向从反射层主表面远离的一侧形成,并且自由外壳材料,如灌封或包封材料的。

    METHOD FOR THE PRODUCTION OF A PLURALITY OF OPTO-ELECTRONIC SEMICONDUCTOR CHIPS AND OPTO-ELECTRONIC SEMICONDUCTOR CHIP
    24.
    发明申请
    METHOD FOR THE PRODUCTION OF A PLURALITY OF OPTO-ELECTRONIC SEMICONDUCTOR CHIPS AND OPTO-ELECTRONIC SEMICONDUCTOR CHIP 审中-公开
    方法制造光电子半导体芯片和光电子半导体芯片,各种

    公开(公告)号:WO2005013316A3

    公开(公告)日:2005-03-31

    申请号:PCT/DE2004001594

    申请日:2004-07-22

    Inventor: HAERLE VOLKER

    Abstract: The invention relates to a method for the production of a plurality of opto-electronic semiconductor chips respectively comprising a plurality of structural elements respectively consisting of at least one semiconductor layer. According to the inventive method, a chip composite base is produced, said base comprising a substrate and an epitaxial surface. A non-closed mask material layer is grown on the epitaxial surface. The mask material layer consists of a plurality of statistically distributed windows having various forms and/or opening surfaces. A masking material is selected in such a way that a semiconductor material of the semiconductor layer, which is grown in a later step of the inventive method, cannot grow on said material or grows in a substantially worse manner in comparison with the epitaxial surface. Subsequently, semiconductor layers are deposited on the epitaxial surface in an essentially simultaneous manner on areas located inside the windows. In another step of the inventive method, the chip composite base with deposited material is separated to form semiconductor chips. The invention also relates to an optoelectronic semiconductor element produced according to said method.

    Abstract translation: 本发明涉及一种用于生产各种具有多个结构构件的每一个具有至少一个半导体层的光电子半导体芯片的每个。 在该方法中,提供了一种复合体基板芯片,其包括衬底和生长的表面。 未封闭的掩模材料层以这样的方式来生长表面生长,掩模材料层具有多个不同的形状和/或开口区,统计分布的窗口,从而选择掩模材料,使得在稍后的处理一个aufzuwachsendes步骤中,半导体层的半导体材料上,所述大致 可相较于生长表面或不增长显著恶化。 随后,将生长面的半导体层同时处于基本上位于沉积在窗口区域内。 另一步骤是用材料的芯片复合体基板施加到半导体芯片的分离。 本发明还涉及根据该方法光电子半导体器件所产生的材料。

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