公开(公告)号：DE10244200A1

公开(公告)日：2004-04-08

申请号：DE10244200

申请日：2002-09-23

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BAUR JOHANNES ,  FEHRER MICHAEL ,  HAHN BERTHOLD ,  STEIN WILHELM ,  PLOESL ANDREAS ,  EISERT DOMINIK

IPC: H01L33/32 ,  H01L33/40 ,  H01L33/00

Abstract: A radiation-emitting semiconductor component with a layer structure ( 12 ) which includes a photon-emitting active layer ( 16 ), an n-doped cladding layer ( 14 ) and a p-doped cladding layer ( 18 ), a contact connected to the n-doped cladding layer ( 14 ) and a mirror layer ( 20 ) connected to the p-doped cladding layer ( 18 ). The mirror layer ( 20 ) is formed by an alloy of silver comprising one or more metals selected from the group consisting of Ru, Rh, Pd, Au, Os, Ir, Pt, Cu, Ti, Ta and Cr.

公开(公告)号：DE10339982B4

公开(公告)日：2009-10-08

申请号：DE10339982

申请日：2003-08-29

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STRAUS UWE ,  BOEHM BERND ,  STEIN WILHELM

IPC: H01L33/00 ,  H01L33/44 ,  H01S5/02

公开(公告)号：DE50309549D1

公开(公告)日：2008-05-15

申请号：DE50309549

申请日：2003-09-22

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BAUR JOHANNES ,  EISERT DOMINIK ,  FEHRER MICHAEL ,  HAHN BERTHOLD ,  PLOESSL ANDREAS ,  STEIN WILHELM

IPC: H01L33/32 ,  H01L33/40

Abstract: A radiation-emitting semiconductor component with a layer structure ( 12 ) which includes a photon-emitting active layer ( 16 ), an n-doped cladding layer ( 14 ) and a p-doped cladding layer ( 18 ), a contact connected to the n-doped cladding layer ( 14 ) and a mirror layer ( 20 ) connected to the p-doped cladding layer ( 18 ). The mirror layer ( 20 ) is formed by an alloy of silver comprising one or more metals selected from the group consisting of Ru, Rh, Pd, Au, Os, Ir, Pt, Cu, Ti, Ta and Cr.

公开(公告)号：DE10329364B4

公开(公告)日：2007-10-11

申请号：DE10329364

申请日：2003-06-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： JUNG CHRISTIAN ,  STEIN WILHELM

IPC: H01L21/285 ,  H01L33/30 ,  H01L33/40

公开(公告)号：DE10245632B4

公开(公告)日：2006-10-26

申请号：DE10245632

申请日：2002-09-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STEIN WILHELM ,  WIRTH RALPH

IPC: H01L33/10 ,  H01L33/14 ,  H01L33/20

公开(公告)号：DE10229231B9

公开(公告)日：2006-05-11

申请号：DE10229231

申请日：2002-06-28

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ZULL HERIBERT ,  STEIN WILHELM

IPC: B81C1/00 ,  H01L21/308 ,  H01L31/0232 ,  H01L31/0236 ,  H01L33/22

公开(公告)号：DE102004040077A1

公开(公告)日：2005-12-22

申请号：DE102004040077

申请日：2004-08-18

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BRICK PETER ,  ALBRECHT TONY ,  STEIN WILHELM

IPC: H01L21/00 ,  H01S3/109 ,  H01S5/02 ,  H01S5/042 ,  H01S5/14 ,  H01S5/183

Abstract: A surface-emitting semiconductor laser component, in particular an electrically pumped semiconductor laser component, featuring emission in a vertical direction. The component is provided for the generation of laser radiation by means of an external optical resonator (4, 5). The component comprises a semiconductor body with a semiconductor layer sequence (2) having a lateral main direction of extension and an active zone (3) provided for generation of radiation. A radiation-transmissive contact layer (6) is arranged within the resonator and is electrically conductively connected to the semiconductor body.

公开(公告)号：DE10229231B4

公开(公告)日：2005-03-17

申请号：DE10229231

申请日：2002-06-28

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ZULL HERIBERT ,  STEIN WILHELM

IPC: H01L31/0236 ,  H01L33/22 ,  H01L33/00 ,  B81C1/00 ,  H01L21/308 ,  H01L31/0232

公开(公告)号：DE10261675A1

公开(公告)日：2004-07-22

申请号：DE10261675

申请日：2002-12-31

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STEIN WILHELM ,  WIRTH RALPH ,  ALBRECHT TONY

IPC: H01L33/44 ,  H01L33/00

Abstract: An optoelectronic structural element has an epitaxial semiconductor layer sequence (6) with an electromagnetic radiation emitting zone and at least one electrical contact region (10) with at least one radiation permeable zinc oxide (ZnO) containing electrical contact layer (ECL), connected electrically to the outer semiconductor layer (5), where the ECL contains a waterproof material (8) for protection against moisture.

公开(公告)号：DE10244986B4

公开(公告)日：2008-02-07

申请号：DE10244986

申请日：2002-09-26

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HAHN BERTHOLD ,  FEHRER MICHAEL ,  HAERLE VOLKER ,  BADER STEFAN ,  STEIN WILHELM ,  KAISER STEPHAN

IPC: H01L33/38 ,  H01L33/40 ,  H01L33/46 ,  H01S5/028 ,  H01S5/042 ,  H01S5/323