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    SEMICONDUCTOR CHIP FOR OPTOELECTRONICS
    21.
    发明申请
    SEMICONDUCTOR CHIP FOR OPTOELECTRONICS 审中-公开
    半导体芯片光电

    公开(公告)号：WO02089217A3

    公开(公告)日：2003-01-09

    申请号：PCT/DE0201530

    申请日：2002-04-26

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  WIRTH RALPH

    Inventor： WIRTH RALPH

    IPC: H01L33/20 ,  H01L33/38 ,  H01L33/00

    CPC classification number: H01L33/20 ,  H01L33/38

    Abstract: The invention relates to a semiconductor chip, especially a light-emitting diode, having a substrate (2) on which a semiconductor layer sequence (3) with an active zone (5) is applied. A graded, Fresnel lens-like structured window layer (6) is located above the semiconductor layer sequence (3), which functions as a semicircular lens (7) with regard to radiation decoupling, resulting in a semiconductor chip with a particularly high decoupling efficiency.

    Abstract translation: 一种半导体芯片，特别是一种发光二极管包括：（2）被施加在基底上，其与有源区的半导体层序列（3）（5）。 上述半导体层序列（3）是一个阶梯状结构fresnellinsenartig窗口层（6），其具有半球形透镜（7）相对于所述辐射耦合的功能。 这导致具有特别高的Auskoppelwirkungsgrad的半导体芯片。

    OPTOELECTRONIC SEMICONDUCTOR COMPONENT
    22.
    发明申请
    OPTOELECTRONIC SEMICONDUCTOR COMPONENT 审中-公开
    光电半导体器件

    公开(公告)号：WO2010054622A3

    公开(公告)日：2010-07-08

    申请号：PCT/DE2009001548

    申请日：2009-11-02

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  WIRTH RALPH

    Inventor： WIRTH RALPH

    IPC: H01L25/075 ,  H01L33/00

    CPC classification number: H01L25/0753 ,  H01L25/167 ,  H01L33/50 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

    Abstract: The invention relates to an optoelectronic component (1) comprising a connection support (2), on which at least two radiation-emitting semiconductor chips (3) are located and a conversion element (4) that is fixed to the connection support (2), said conversion element (4) spanning the semiconductor chips (3) in such a way that the chips (3) are surrounded by the conversion element (4) and the connection support (2). At least two of the radiation-emitting semiconductor chips (3) differ from one another with respect to the wavelengths of the electromagnetic radiation that they emit during operation.

    Abstract translation: 提供了一种光电部件（1），包括： - 终端载体（2），被布置在所述至少两个发射辐射的半导体芯片（3），上 - 一个转换元件（4），其被固定到所述终端支撑件（2），其中： - 所述转换元件 （4）横跨半导体芯片（3），使得所述半导体芯片（3）由所述转换元件（4）和连接架（2）包围，以及 - 至少在从它们在操作的波长而言两个发射辐射的半导体芯片（3）的 彼此不同，所发出的电磁辐射。

    LUMINESCENT DIODE PROVIDED WITH A REFLECTION-REDUCING LAYER SEQUENCE
    24.
    发明申请
    LUMINESCENT DIODE PROVIDED WITH A REFLECTION-REDUCING LAYER SEQUENCE 审中-公开
    LUMINESCENT二极管反射减少层成功

    公开(公告)号：WO2006012818A3

    公开(公告)日：2006-04-06

    申请号：PCT/DE2005001065

    申请日：2005-06-15

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  PIETZONKA INES ,  SCHMID WOLFGANG ,  WIRTH RALPH

    Inventor： PIETZONKA INES ,  SCHMID WOLFGANG ,  WIRTH RALPH

    IPC: H01L33/10 ,  H01L33/46

    CPC classification number: H01L33/105 ,  H01L33/465

    Abstract: The invention relates to a luminescent diode (1) comprising an active area (7) which emits electromagnetic radiation in the direction of the main radiation (15). The active area (7) in the direction of the main radiation (15) is arranged downstream from a reflection-reducing layer sequence (16). Said reflection-reducing layer sequence contains a DBR mirror which is formed from at least one pair of layers (11, 12), a reflection coating (9) which is arranged downstream from the DBR-mirror (13) in the direction of the main radiation (15) and an intermediate layer (14) which is arranged between the DBR-mirror (13) and the reflection coating (9).

    Abstract translation: 在发光二极管（1）与活性区（7）中，在主辐射方向上的电磁辐射（15）被发射，其中，所述有源区（7）具有反射抑制层序列（16）中的主光束方向（15）的下游布置，包含防反射 层序列的至少一对层（11，12）形成的DBR镜（13），在主波束方向的DBR反射镜（13）（15）随后的补偿层（9）和所述DBR反射镜（13）和所述间 配置中间层（14）的化合物层（9）。

    OPTOELECTRONIC DEVICE
    26.
    发明申请
    OPTOELECTRONIC DEVICE 审中-公开
    光电子器件

    公开(公告)号：WO2010069933A3

    公开(公告)日：2010-08-19

    申请号：PCT/EP2009067108

    申请日：2009-12-14

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  WIRTH RALPH ,  KLEIN MARKUS

    Inventor： WIRTH RALPH ,  KLEIN MARKUS

    IPC: H05B33/08

    CPC classification number: H05B33/0869 ,  H05B33/0872

    Abstract: The invention relates to an optoelectronic device for radiating mixed light in a first wavelength range and a second wavelength range different from the first wavelength range, comprising a first or second semiconductor light source (1, 2) having a first or second light-emitting diode (11, 21), which radiates light having a first or second characteristic wavelength in the first or second wavelength range and having a first or second intensity when a first or second current (41, 42) is applied, an optical sensor (3) for converting a part (110, 510) of the respective radiated light from the semiconductor light sources (1, 2) into a first or second sensor signal (341, 342), and a control device (4) for controlling the first and second currents (41, 42) according to the first and second sensor signals (341, 342), wherein the characteristic wavelengths and intensities of the respective light radiated by the first and second semiconductor light sources (1, 2) have a first temperature- and/or current- and/or aging-dependence or second temperature- and/or current- and/or aging dependence (931, 932, 941, 942) different from the first temperature- and/or current- and/or aging-dependence, the optical sensor (3) has a first or second wavelength-dependent sensitivity in the first or second wavelength range, wherein said first and second wavelength-dependent sensitivities are adapted to the first and second temperature dependences (931, 932, 941, 942), and the control device (4) controls the first and second currents (41, 42) in such a way that there is a predetermined ratio of the first to the second sensor signal (341, 342).

    Abstract translation: 用于第一和第二半导体光源混合光的辐射在第一和不同的第二波长范围包括一种光电装置（1，2），具有第一和第二发光二极管（11,21），其（在第一和第二数据流的应用 具有在所述第一或第二波长范围内的，并与第一和第二强度，用于从所述半导体光源1转换的一个部分（110，510）（光学传感器（3）的第一和第二特征波长41,42发射）光 ，2）响应于所述第一和第二传感器信号（341，342），每个发射的光划分为第一或第二传感器信号（341，342），以及用于控制第一和第二流控制设备（4）（41，42）， 其中第一和第二半导体光源（1,2）中的每一个的特征波长和强度辐射光第一和第二 的不同的第二温度，和/或电力和/或老化的依赖性（931，932，941，942），其具有第一和第二波长相关的灵敏度在第一或第二波长范围内的光传感器（3），至 第一和第二温度的依赖性（931，932，941，942）被适配，并且所述控制装置（4）的第一和第二电流（41，42）进行控制，使得所述第一至所述第二传感器信号（341，342）具有预定的比 ，

    OPTOELECTRONIC COMPONENT AND DECOUPLING LENS FOR AN OPTOELECTRONIC COMPONENT
    27.
    发明申请
    OPTOELECTRONIC COMPONENT AND DECOUPLING LENS FOR AN OPTOELECTRONIC COMPONENT 审中-公开
    光电元件和输出耦合光电子COMPONENT

    公开(公告)号：WO2009039824A3

    公开(公告)日：2009-10-15

    申请号：PCT/DE2008001511

    申请日：2008-09-05

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  WIRTH RALPH ,  BARCHMANN BERND

    Inventor： WIRTH RALPH ,  BARCHMANN BERND

    IPC: H01L33/50 ,  H01L33/64

    CPC classification number: H01L33/505 ,  H01L33/46 ,  H01L33/644 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The invention relates to an optoelectronic component having the following features: - at least one semiconductor body (1) provided for emitting electromagnetic radiation of a first wavelength range, - a heat sink (2) on which the semiconductor body (1) and a mirror (3) are disposed, and - a wavelength-converting layer (4) disposed to the side of the semiconductor body (1) on the mirror (3), said layer comprising a wavelength-conversion material (8) that is suitable to convert at least a portion of the radiation of the first wavelength range emitted by the semiconductor body (1) into radiation of a second wavelength range different from the first wavelength range. The invention further relates to a decoupling lens (14) for an optoelectronic component.

    Abstract translation: 它具有以下特征的光电子器件中公开： - 其被提供给发射第一波长范围的电磁辐射的至少一个半导体本体（1）， - 散热器（2）在其上的半导体主体（1）和反射镜（ 3）被布置，以及 - 波长转换层设置在所述反射镜（4）（3）（在所述半导体主体1）和波长转换体的侧面（8），其能够至少的一部分（所述半导体主体的 转换1）所述第一波长范围的发射的辐射到的波长范围与所述第一第二波长范围内的不同的辐射。 此外，耦合输出透镜（14），用于光电装置进行说明。

    OPTOELECTRONIC SEMICONDUCTOR CHIP
    28.
    发明申请
    OPTOELECTRONIC SEMICONDUCTOR CHIP 审中-公开
    光电子半导体芯片

    公开(公告)号：WO2007036198A3

    公开(公告)日：2007-05-24

    申请号：PCT/DE2006001616

    申请日：2006-09-14

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  PLOESSL ANDREAS ,  WIRTH RALPH

    Inventor： PLOESSL ANDREAS ,  WIRTH RALPH

    IPC: H01L33/00 ,  H01L33/10 ,  H01L33/42

    CPC classification number: H01L33/0079 ,  H01L33/10 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The invention relates to an optoelectronic semiconductor chip which emits electromagnetic radiation from its front side (7), comprising: a semiconductor layered construction (1) with an active region (4) suited for generating electromagnetic radiation, and; a separately made TCO supporting substrate (10), which is placed on the semiconductor layered construction, has a material from the group of transparent conducting oxides (TCO) and which mechanically supports the semiconductor layered construction (1).

    Abstract translation: 它的光电子半导体芯片中公开了从正面侧在操作期间电磁辐射（7），其包括发射： - （1）具有有源区（4），其适于产生所述电磁辐射的半导体层序列，以及 - 在一 半导体层序列布置分开制造TCO支撑基板（10），其包括选自由以下组成的透明导电氧化物（TCO）和半导体层序列（1）的机械辅助的组中选择的材料。

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