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公开(公告)号：FR2833106B1
公开(公告)日：2005-02-25
申请号：FR0115594
申请日：2001-12-03
Applicant: ST MICROELECTRONICS SA
Inventor： FARCY ALEXIS , CORONEL PHILIPPE , ANCEY PASCAL , TORRES JOAQUIM
Abstract: The circuit includes a first semiconductor substrate supporting the electronic circuit, and a second substrate carrying an electromechanical component. The two substrates are glued together forming a sealed and protective enclosure for the auxiliary component. The first phase of manufacture includes forming the semiconductor chip (PC) within a first substrate, and forming a cavity in the upper surface of this substrate to accommodate an auxiliary component. A wall remains around the cavity, leaving the cavity as a well. The second phase includes formation of the auxiliary component (CAX) on a second semiconductor substrate (SB2), separate from the first. The second substrate is then turned over and applied to the first substrate as a lid with the auxiliary component hanging within the cavity of the first substrate. The two substrates are glued together forming a sealed and protective enclosure for the auxiliary component.
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公开(公告)号：FR2858876A1
公开(公告)日：2005-02-18
申请号：FR0350425
申请日：2003-08-12
Applicant: ST MICROELECTRONICS SA , COMMISSARIAT ENERGIE ATOMIQUE
Inventor： CORONEL PHILIPPE , LAPLANCHE YVES , PAIN LAURENT
IPC: G03F7/11 , G03F7/20 , G03F7/36 , G03F7/40 , H01L21/027 , H01L21/3205 , H01L21/336 , H01L21/768 , H01L27/12 , H01L29/423 , H01L29/786 , H01L21/3065 , H01L21/76
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公开(公告)号：FR2852441A1
公开(公告)日：2004-09-17
申请号：FR0303194
申请日：2003-03-14
Applicant: ST MICROELECTRONICS SA
Inventor： CORONEL PHILIPPE , MAZOYER PASCALE , SKOTNICKI THOMAS
Abstract: The memory device has a memory cell (CM) with a membrane (MB) fixed on a substrate (SB). A deformable part (PDF) is situated at a distance to the substrate and is deformable between two stable mechanical positions corresponding to two logic levels of the memory cell. A deformation unit (MDF) is deforms the membrane. A detection unit (MDT) detects the logic level of the memory cell. Independent claims are also included for the following: (a) an integrated circuit (b) a method of controlling a logic level of a memory cell.
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公开(公告)号：FR2826507B1
公开(公告)日：2004-07-02
申请号：FR0108192
申请日：2001-06-21
Applicant: ST MICROELECTRONICS SA
Inventor： FERREIRA PAUL , CORONEL PHILIPPE
IPC: H01L21/033 , H01L21/266 , H01L21/301 , H01L21/8238
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公开(公告)号：FR2918795B1
公开(公告)日：2009-10-02
申请号：FR0756447
申请日：2007-07-12
Applicant: ST MICROELECTRONICS SA , ST MICROELECTRONICS CROLLES 2
Inventor： COUDRAIN PERCEVAL , CORONEL PHILIPPE , BELREDON XAVIER
IPC: H01L27/146 , H01L31/02 , H01L31/18
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Patent Agency Ranking
公开(公告)号：FR2928490A1
公开(公告)日：2009-09-11
申请号：FR0851494
申请日：2008-03-07
Applicant: ST MICROELECTRONICS SA
Inventor： COUDRAIN PERCEVAL , CORONEL PHILIPPE , MARTY MICHEL , BOPP MATTHIEU
IPC: H01L21/00 , H01L31/0232
Abstract: L'invention concerne une structure semiconductrice comprenant une première zone active (R) sous laquelle est enterrée une première couche réfléchissante (32) et au moins une deuxième zone active (G) sous laquelle est enterrée une deuxième couche réfléchissante (34), caractérisée en ce que la surface supérieure de la deuxième couche réfléchissante est plus proche de la surface supérieure de la structure que la surface supérieure de la première couche réfléchissante.
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公开(公告)号：FR2860919B1
公开(公告)日：2009-09-11
申请号：FR0350665
申请日：2003-10-09
Applicant: ST MICROELECTRONICS SA , COMMISSARIAT ENERGIE ATOMIQUE
Inventor： MONFRAY STEPHANE , HALIMAOUI AOMAR , CORONEL PHILIPPE , LENOBLE DAMIEN , FENOUILLET BERANGER CLAIRE
IPC: H01L21/762 , H01L21/336
Abstract: A region of monocrystalline silicon (20, 124 - 128) on insulator on silicon (24, 120) is destined to receive at least one component. The insulator (26) comprises some over-thickness (OT). Independent claims are also included for: (a) a component realised in such a region of monocrystalline silicon; (b) the fabrication of a semiconductor on insulator region; (c) the fabrication of a MOS transistor.
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公开(公告)号：FR2915023B1
公开(公告)日：2009-07-17
申请号：FR0702696
申请日：2007-04-13
Applicant: ST MICROELECTRONICS CROLLES 2 , ST MICROELECTRONICS SA
Inventor： DUTARTRE DIDIER , CORONEL PHILIPPE , LOUBET NICOLAS
Abstract: Metal contacts are self-positioned on a wafer of semiconductor product. Respective placement areas for a metal contact are determined by a selective deposition of a growth material over a region of the substrate surface (for example, through epitaxial growth). The growth material is surrounded by an insulating material. The grown material is then removed to form a void in the insulating material which coincides with the desired location of the metal contact. This removal of the grown material exposes the region on the substrate surface. Conductive material is then deposited to fill the void and thus form the metal contact directly with the region of the substrate surface.
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公开(公告)号：FR2858876B1
公开(公告)日：2006-03-03
申请号：FR0350425
申请日：2003-08-12
Applicant: ST MICROELECTRONICS SA , COMMISSARIAT ENERGIE ATOMIQUE
Inventor： CORONEL PHILIPPE , LAPLANCHE YVES , PAIN LAURENT
IPC: G03F7/11 , H01L21/3065 , G03F7/20 , G03F7/36 , G03F7/40 , H01L21/027 , H01L21/3205 , H01L21/336 , H01L21/76 , H01L21/768 , H01L27/12 , H01L29/423 , H01L29/786
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公开(公告)号：FR2860919A1
公开(公告)日：2005-04-15
申请号：FR0350665
申请日：2003-10-09
Applicant: ST MICROELECTRONICS SA , COMMISSARIAT ENERGIE ATOMIQUE
Inventor： MONFRAY STEPHANE , HALIMAOUI AOMAR , CORONEL PHILIPPE , LENOBLE DAMIEN , FENOUILLET BERANGER CLAIRE
IPC: H01L21/762 , H01L21/336
Abstract: A region of monocrystalline silicon (20, 124 - 128) on insulator on silicon (24, 120) is destined to receive at least one component. The insulator (26) comprises some over-thickness (OT). Independent claims are also included for: (a) a component realised in such a region of monocrystalline silicon; (b) the fabrication of a semiconductor on insulator region; (c) the fabrication of a MOS transistor.
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