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    21.
    发明专利
    未知

    公开(公告)号：DE69725123D1

    公开(公告)日：2003-10-30

    申请号：DE69725123

    申请日：1997-07-04

    Applicant: ST MICROELECTRONICS SRL

    Inventor： MURARI BRUNO ,  VIGNA BENEDETTO ,  FERRARI PAOLO

    IPC: G11B5/31 ,  G11B5/39 ,  G11B5/00

    Abstract: An electromagnetic head (130) for a storage device comprises a magnetic core (205) forming a magnetic circuit, the magnetic core (205) being interrupted by a first air-gap (230) for magnetic coupling with a memory cell of the device, and by at least one second air-gap (235) which separates a first pole (240) and a second pole (245) of the magnetic core (205), and magnetoresistive means (250) disposed in the region of the second air-gap (235) for reading the memory cell; the magnetoresistive means (250) are connected to the magnetic core (205) in the region of the first pole (240) and of the second pole (245) so as to be connected in the magnetic circuit.

    25.
    发明专利
    未知

    公开(公告)号：DE69734280D1

    公开(公告)日：2006-02-09

    申请号：DE69734280

    申请日：1997-07-10

    Applicant: ST MICROELECTRONICS SRL

    Inventor： VIGNA BENEDETTO ,  FERRARI PAOLO ,  FERRERA MARCO ,  MONTANINI PIETRO

    IPC: B81B3/00 ,  G01C19/00 ,  G01C19/56 ,  G01P15/00 ,  G01P15/08 ,  G01P15/125 ,  H01L21/00 ,  H01L21/762 ,  H01L21/764 ,  H01L29/84

    Abstract: To increase the sensitivity of the sensor the suspended structure (40) forming the seismic mass has a tungsten core (26) which has high density. To manufacture it, a sacrificial layer (21) of silicon oxide, a polycrystal silicon layer (24), a tungsten layer (26) and a silicon carbide layer (28) are deposited in succession over a single crystal silicon body (1); the suspended structure (40) is defined by selectively removing the silicon carbide (28), tungsten (26) and polycrystal silicon (24) layers; spacers (30') of silicon carbide are formed which cover the uncovered ends of the tungsten layer (26); and the sacrificial layer (21) is then removed.

    27.
    发明专利
    未知

    公开(公告)号：DE69627645T2

    公开(公告)日：2004-02-05

    申请号：DE69627645

    申请日：1996-07-31

    Applicant: ST MICROELECTRONICS SRL

    Inventor： VIGNA BENEDETTO ,  FERRARI PAOLO ,  VILLA FLAVIO

    IPC: G01L9/06 ,  B81B3/00 ,  B81C1/00 ,  G01L9/00 ,  H01L29/84

    Abstract: The pressure sensor is integrated in a SOI (Silicon-on-Insulator) substrate using the insulating layer as a sacrificial layer, which is partly removed by chemical etching to form the diaphragm. To fabricate the sensor, after forming the piezoresistive elements (10) and the electronic components (4, 6-8) integrated in the same chip, trenches (26) are formed in the upper wafer (23) of the substrate and extending from the surface to the layer of insulating material (22); the layer of insulating material (22) is chemically etched through the trenches (26) to form an opening (31) beneath the diaphragm (27); and a dielectric layer (25) is deposited to outwardly close the trenches (26) and the opening (31). Thus, the process is greatly simplified, and numerous packaging problems eliminated.

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