-
21.发明申请公开(公告)号：US20180050902A1
公开(公告)日：2018-02-22
申请号：US15554653
申请日：2015-12-14
Applicant: Goertek.Inc
Inventor： Yanmei SUN
CPC classification number: B81B7/02 , B81B2201/0257 , B81B2201/0264 , B81C1/00158 , B81C2201/0105 , B81C2201/013 , G01L7/08 , H04R19/005 , H04R19/04 , H04R31/00 , H04R2201/003
Abstract: The present invention discloses a manufacturing method of an integrated structure of a MEMS microphone and a pressure sensor, which comprises the following steps: depositing an insulating layer, a first polycrystalline silicon layer, a sacrificial layer and a second polycrystalline silicon layer in sequence on a shared substrate; etching the second polycrystalline silicon layer to form a vibrating diaphragm and an upper electrode; eroding the sacrificial layer to form a containing cavity of a microphone and a pressure sensor, and etching the sacrificial layer between the microphone and the pressure sensor; etching the first polycrystalline silicon layer to form a back electrode of the microphone and a lower electrode of the pressure sensor; etching a position of the shared substrate below a back electrode of the microphone to form a back cavity; and etching away the region of the insulating layer below the back electrode. A capacitance structure of a MEMS microphone and that of a pressure sensor are integrated on a shared substrate, improving integration of a MEMS microphone and a pressure sensor, and greatly reducing a size of a whole packaging structure; in addition, a microphone and a pressure sensor can be simultaneously manufactured on a shared substrate to improve the efficiency of production.
-
22.发明申请TRAPPED SACRIFICIAL STRUCTURES AND METHODS OF MANUFACTURING SAME USING THIN-FILM ENCAPSULATION 有权TRAPPED SACRIFICIAL STRUCTURES AND METHODS OF MANUIFACTTING OF SAME USING THIN-FILM ENCAPSULATION公开(公告)号：US20160355397A1
公开(公告)日：2016-12-08
申请号：US15243031
申请日：2016-08-22
Inventor： Emmanuel P. Quevy , Louis Nervegna , Jeremy R. Hui
CPC classification number: B81C1/00246 , B81B3/0021 , B81B7/007 , B81B7/0077 , B81B7/008 , B81B2201/0214 , B81B2201/0235 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81C1/00158 , B81C1/00269 , B81C1/00285 , B81C1/00333 , B81C1/0038 , B81C2201/0105 , B81C2201/056 , B81C2203/0118 , B81C2203/0136 , B81C2203/0172 , B81C2203/019 , B81C2203/0735 , G01N27/223 , G01N27/227
Abstract: Trapped sacrificial structures and thin-film encapsulation methods that may be implemented to manufacture trapped sacrificial structures such as relative humidity sensor structures, and spacer structures that protect adjacent semiconductor structures extending above a semiconductor die substrate from being contacted by a molding tool or other semiconductor processing tool in an area of a die substrate adjacent the spacer structures.
Abstract translation: 捕获的牺牲结构和薄膜封装方法可用于制造捕获的牺牲结构，例如相对湿度传感器结构，以及保护在半导体管芯基板之上延伸的相邻半导体结构不被模具或其它半导体加工件接触的间隔结构 工具在与衬垫结构相邻的管芯衬底的区域中。
-
公开(公告)号：US11932531B2
公开(公告)日：2024-03-19
申请号：US17694083
申请日：2022-03-14
Inventor： Ting-Jung Chen
CPC classification number: B81B3/0072 , B81C1/00666 , H04N23/54 , H04N23/687 , B81B2203/0118 , B81B2203/019 , B81B2203/0307 , B81C2201/0105 , B81C2201/0178 , G02B7/021
Abstract: The present disclosure relates to an integrated chip structure including a MEMS actuator. The MEMS actuator includes an anchor having a first plurality of branches extending outward from a central region of the anchor. The first plurality of branches respectively include a first plurality of fingers. A proof mass surrounds the anchor and includes a second plurality of branches extending inward from an interior sidewall of the proof mass. The second plurality of branches respectively include a second plurality of fingers interleaved with the first plurality of fingers as viewed in a top-view. One or more curved cantilevers are coupled between the proof mass and a frame wrapping around the proof mass. The one or more curved cantilevers have curved outer surfaces having one or more inflection points as viewed in the top-view.
-
公开(公告)号：US11904356B2
公开(公告)日：2024-02-20
申请号：US16699185
申请日：2019-11-29
Applicant: Hitachi, Ltd.
Inventor： Taiichi Takezaki , Masakazu Kawano , Shuntaro Machida
CPC classification number: B06B1/0292 , A61B5/0095 , A61B8/12 , A61B8/4494 , B81B3/0021 , B81C1/00158 , G01N29/2406 , B81B2201/0271 , B81B2203/0127 , B81B2203/0315 , B81B2203/04 , B81C2201/0105 , G01N2291/101
Abstract: A highly-sensitive ultrasonic transducer with good yield is provided. The ultrasonic transducer includes a cavity layer, a pair of electrodes positioned above and below the cavity layer, insulating layers disposed above and below each of the pair of electrodes, and a filled hole that penetrates, in a vertical direction, at least a portion of the insulating layers positioned above the cavity layer. When the ultrasonic transducer is viewed from above, each electrode of the pair of electrodes includes, at a position that overlaps the embedded hole, a non-electrode region where the electrodes are not formed.
-
25.发明授权公开(公告)号：US11855604B2
公开(公告)日：2023-12-26
申请号：US17031181
申请日：2020-09-24
Applicant: STMICROELECTRONICS S.r.l.
Inventor： Federico Vercesi , Lorenzo Corso , Giorgio Allegato , Gabriele Gattere
CPC classification number: H03H9/1021 , B81B7/0038 , B81C1/00285 , H03H3/02 , H03H9/17 , B81B2201/0271 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81B2207/07 , B81C2201/0105 , B81C2203/0118 , H03H2003/022 , H03H2003/027 , H03H2009/155
Abstract: A microelectromechanical resonator device has: a main body, with a first surface and a second surface, opposite to one another along a vertical axis, and made of a first layer and a second layer, arranged on the first layer; a cap, having a respective first surface and a respective second surface, opposite to one another along the vertical axis, and coupled to the main body by bonding elements; and a piezoelectric resonator structure formed by: a mobile element, constituted by a resonator portion of the first layer, suspended in cantilever fashion with respect to an internal cavity provided in the second layer and moreover, on the opposite side, with respect to a housing cavity provided in the cap; a region of piezoelectric material, arranged on the mobile element on the first surface of the main body; and a top electrode, arranged on the region of piezoelectric material, the mobile element constituting a bottom electrode of the piezoelectric resonator structure.
-
Patent Agency Ranking
公开(公告)号：US20230219806A1
公开(公告)日：2023-07-13
申请号：US17694083
申请日：2022-03-14
Inventor： Ting-Jung Chen
CPC classification number: B81B3/0072 , B81C1/00666 , H04N5/2253 , H04N5/23287 , B81B2203/0118 , B81B2203/019 , B81B2203/0307 , B81C2201/0105 , B81C2201/0178 , G02B7/021
Abstract: The present disclosure relates integrated chip structure including a MEMS actuator. The MEMS actuator includes an anchor having a first plurality of branches extending outward from a central region of the anchor. The first plurality of branches respectively include a first plurality of fingers. A proof mass surrounds the anchor and includes a second plurality of branches extending inward from an interior sidewall of the proof mass. The second plurality of branches respectively include a second plurality of fingers interleaved with the first plurality of fingers as viewed in a top-view. One or more curved cantilevers are coupled between the proof mass and a frame wrapping around the proof mass. The one or more curved cantilevers have curved outer surfaces having one or more inflection points as viewed in the top-view.
-
公开(公告)号：US20190242709A1
公开(公告)日：2019-08-08
申请号：US16340863
申请日：2017-12-19
Inventor： TAKASHI IMANAKA , SHOICHI TAJI , SOICHIRO HIRAOKA , KATSUYA MORINAKA
IPC: G01C19/5769 , B81B7/00 , B81C1/00 , G01C19/5733
CPC classification number: G01C19/5769 , B81B7/0051 , B81B7/02 , B81B2201/0235 , B81B2201/0242 , B81B2203/0127 , B81B2203/0353 , B81C1/00325 , B81C2201/0105 , B81C2201/0112 , B81C2201/0132 , B81C2203/036 , G01C19/5733 , G01C19/5747 , H01L29/84
Abstract: A sensor includes a sensor substrate, and an upper lid substrate joined to an upper surface of the sensor substrate. The sensor substrate includes a fixed part, a deformable beam connected to the fixed part, and a weight connected to the beam. The weight is movable relative to the fixed part. The upper lid substrate includes a first part containing silicon and a second part joined to the first part and containing glass. The first part includes a projection protruding toward the sensor substrate relative to the second part. The sensor has high accuracy or high reliability.
-
28.发明申请公开(公告)号：US20180107854A1
公开(公告)日：2018-04-19
申请号：US15853396
申请日：2017-12-22
Applicant: INVENSENSE, INC.
Inventor： Julius Ming-Lin Tsai , Mike Daneman , Sanjiv Kapoor
CPC classification number: G06K9/0002 , B06B1/0666 , B06B1/067 , B06B2201/70 , B81B7/007 , B81B2201/0271 , B81B2201/032 , B81B2203/0127 , B81B2207/012 , B81B2207/015 , B81C1/00238 , B81C1/00246 , B81C1/00301 , B81C2201/0105 , B81C2201/0109 , B81C2203/035 , B81C2203/036 , B81C2203/0792 , G01H11/08
Abstract: Microelectromechanical (MEMS) devices and associated methods are disclosed. Piezoelectric MEMS transducers (PMUTs) suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuit (IC), as well as PMUT arrays having high fill factor for fingerprint sensing, are described.
-
29.发明授权Methods and structures for thin-film encapsulation and co-integration of same with microelectronic devices and microelectromechanical systems (MEMS) 有权用于薄膜封装和与微电子器件和微机电系统（MEMS）相结合的方法和结构公开(公告)号：US09428377B2
公开(公告)日：2016-08-30
申请号：US14532658
申请日：2014-11-04
Applicant: Silicon Laboratories Inc.
Inventor： Emmanuel P. Quevy , Jeremy R. Hui , Carrie Wing-Zin Low , Mehrnaz Motiee
CPC classification number: B81C1/00246 , B81B3/0021 , B81B7/007 , B81B7/0077 , B81B7/008 , B81B2201/0214 , B81B2201/0235 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81C1/00158 , B81C1/00269 , B81C1/00285 , B81C1/00333 , B81C1/0038 , B81C2201/0105 , B81C2201/056 , B81C2203/0118 , B81C2203/0136 , B81C2203/0172 , B81C2203/019 , B81C2203/0735 , G01N27/223 , G01N27/227
Abstract: Methods and structures that may be implemented in one example to co-integrate processes for thin-film encapsulation and formation of microelectronic devices and microelectromechanical systems (MEMS) such as sensors and actuators. For example, structures having varying characteristics may be fabricated using the same basic process flow by selecting among different process options or modules for use with the basic process flow in order to create the desired structure/s. Various process flow sequences as well as a variety of device design structures may be advantageously enabled by the various disclosed process flow sequences.
Abstract translation: 可以在一个示例中实现的方法和结构，以共同整合用于薄膜封装和形成微电子器件和微机电系统（MEMS）例如传感器和致动器的过程。 例如，可以使用相同的基本工艺流程来制造具有不同特性的结构，通过选择与基本工艺流程一起使用的不同工艺选项或模块以便创建所需的结构。 可以通过各种公开的处理流程序列有利地实现各种处理流程序列以及各种设备设计结构。
-
30.发明申请公开(公告)号：US20160025664A1
公开(公告)日：2016-01-28
申请号：US14532723
申请日：2014-11-04
Applicant: Silicon Laboratories Inc.
Inventor： Emmanuel P. Quevy , Louis Nervegna , Jeremy R. Hui
CPC classification number: B81C1/00246 , B81B3/0021 , B81B7/007 , B81B7/0077 , B81B7/008 , B81B2201/0214 , B81B2201/0235 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81C1/00158 , B81C1/00269 , B81C1/00285 , B81C1/00333 , B81C1/0038 , B81C2201/0105 , B81C2201/056 , B81C2203/0118 , B81C2203/0136 , B81C2203/0172 , B81C2203/019 , B81C2203/0735 , G01N27/223 , G01N27/227
Abstract: Trapped sacrificial structures and thin-film encapsulation methods that may be implemented to manufacture trapped sacrificial structures such as relative humidity sensor structures, and spacer structures that protect adjacent semiconductor structures extending above a semiconductor die substrate from being contacted by a molding tool or other semiconductor processing tool in an area of a die substrate adjacent the spacer structures.
Abstract translation: 捕获的牺牲结构和薄膜封装方法可用于制造捕获的牺牲结构，例如相对湿度传感器结构，以及保护在半导体管芯基板之上延伸的相邻半导体结构不被模具或其它半导体加工件接触的间隔结构 工具在与衬垫结构相邻的管芯衬底的区域中。
-
-
-
-
-
-
-
-
-
Search Results
64
records
(took 0.039 seconds)
