公开(公告)号：JP2000224484A

公开(公告)日：2000-08-11

申请号：JP2000011897

申请日：2000-01-20

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： TAI-MIN CHEN

IPC: H04N5/335 ,  H04N5/353 ,  H04N5/361 ,  H04N5/365 ,  H04N5/374

Abstract: PROBLEM TO BE SOLVED: To improve read time and to cancel the fixed pattern noise of respective pixels by opening a shutter before starting exposure, starting the exposure by VSETB pulses for presetting reset to '1' and ending the exposure by closing the shutter. SOLUTION: The shutter 1012 is opened by a software 1005 on a host personal computer 1002, frame integration pulses FI are turned to a high level, VSETB and VCLRB for clearing reset and performing read are pulsed and the integration of all photocells inside an array is simultaneously started. After exposure time T1, the pulse of frame read FR is continued until FI becomes a low level, then the shutter 1012 is closed and images are read over 1014 lines and then buffered. Further, VSETB are pulsed, the fetch of the next image is started and VCLRB and FR are pulsed again. The integration is performed for the time T1, dark frames are read over 1014 frames, they are subtracted from buffered image frames and noise is canceled.

公开(公告)号：JP2000223668A

公开(公告)日：2000-08-11

申请号：JP2000022737

申请日：2000-01-31

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： GRUENING ULRIKE ,  TOBBEN DIRK ,  SPINDLER OSWALD ,  BEINTNER JOCHEN ,  LEE GILL ,  GABRIC ZVONIMIR

IPC: H01L27/108 ,  H01L21/31 ,  H01L21/316 ,  H01L21/8242

Abstract: PROBLEM TO BE SOLVED: To control the thickness of an insulation layer at a trench by growing an oxide deposition layer selectively at high rate above a conductive material and then removing the oxide deposition layer selectively except a part touching the conductive material in order to form an insulation layer on the conductive material in the trench. SOLUTION: A pad stack 16 is formed by laminating a pad oxide layer 18 and a pad nitride layer 20 sequentially on a substrate 12 and a deep trench 14 is made through the stack 16. After the trench 14 is filled with a conductive filler 24 to leave a recess 26, a nitride liner 36 is deposited on the inside of the recess to cover the pad stack 16. Subsequently, the nitride liner 36 is removed from the entire surface except for the side-wall of the trench 14 and an oxide deposition layer 40 is grown selectively at high rate. Thereafter, the oxide deposition layer 40 is removed except a part touching the conductive filler 24 in order to form an insulation layer 44 on the conductive filler 24.

公开(公告)号：JP2000216712A

公开(公告)日：2000-08-04

申请号：JP34084299

申请日：1999-11-30

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： HOGL ERIK ,  FIEDLER ULRICH

IPC: H03M7/30 ,  H04B3/20 ,  H04B3/23 ,  H04M1/20 ,  H04M1/60 ,  H04M3/00

Abstract: PROBLEM TO BE SOLVED: To flexibly convert dissimilar companding rule telephone signals to be transmittable and to improve flexibility by individually controlling a companding rule of a channel of a programmable compression encoder/decoder. SOLUTION: Compression encoder/decoders (hereafter referred to as converters) 104, 108, 114 and 116 independently make a companding rule selectable by a register 130 including a pointer for a look-up table. A received signal from a near end is separated to a multiplexer 102 and inputted to the converter 104, and a companding rule to be used in each channel is selected according to a command from a controller and added to a converter 108 via an echo canceler 106. A program selecting an individual companding rule again is applied to each channel, and the each channel is multiplexed by a multiplexer 110 and transmitted to a target destination. Also, when a signal is received from a far end, it is similarly transmitted in a prescribed format to a near side subscriber by the converter 114, the canceler 106 and the converter 116.

公开(公告)号：JP2000196069A

公开(公告)日：2000-07-14

申请号：JP36899699

申请日：1999-12-27

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： AKATSU HIROYUKI ,  YUUJUN RII ,  BEINTNER JOCHEN

IPC: H01L29/78 ,  H01L21/336 ,  H01L21/8234 ,  H01L29/10

Abstract: PROBLEM TO BE SOLVED: To form a buried layer self-aligned with a gate and a channel by solving the problem when introducing a buried layer, which is heavily-doped with impurities, having an opposite conductivity which is opposite to the conductivity of the source and the drain, along the width of a channel. SOLUTION: This transistor has a dielectric layer, a gate conductor, and a buried region, and the dielectric layer is arranged to be fit for use as the gate dielectric above the semiconductor body 10 between a first region and a second region, and the gate conductor is so arranged above the dielectric layer as to be used as the gate 18, and the buried region is of first conductivity and moreover has impurity concentration higher than the semiconductor body 10, and it is arranged basically apart from the surface of the semiconductor body 10, between the first region and the second region, and the buried region is aligned with the gate conductor.

公开(公告)号：JP2000057509A

公开(公告)日：2000-02-25

申请号：JP22554899

申请日：1999-08-09

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： CANARIO RONALD A

IPC: G11B5/09 ,  G11B5/02 ,  G11B5/03 ,  G11B19/28 ,  G11B20/00 ,  G11B20/10 ,  G11B20/18 ,  G11B20/22 ,  H01L21/00

Abstract: PROBLEM TO BE SOLVED: To accelerate the rising/falling speed of a current applied to a write head by providing a switch connected to a current source that keeps the current at a prescribed value and by-passing the current source by this switch during the period of changing a current. SOLUTION: The current level of a write head is set by a reference current source 206a, 206b during the time of the unchanging a current (other than the rising/falling time). During the time when the current is changed such as at the rising/falling time, a transistor 214b is turned 'on' by a voltage source 216b, and switched on, and a low resistance pass to the grand is provided, and a current mirror source 212b is shunted. As a result, the transistor 214b receives the control of the current, the current is made to flow through the transistor 214b rather than through the current mirror source 212b. Then, when the current no longer changes essentially, the transistor 214b is turned 'off'.

公开(公告)号：JP2003100680A

公开(公告)日：2003-04-04

申请号：JP2002176781

申请日：2002-06-18

Applicant: IBM ,  INFINEON TECHNOLOGIES CORP

Inventor： ECONOMIKOS LAERTIS ,  SIMPSON ALEXANDER

IPC: B24B57/02 ,  B24B37/04 ,  C09K3/14 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/76 ,  B24B37/00

Abstract: PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing method using fixed abrasive by which the thicknesses of oxide layers, particularly, siliceous oxide layers can be reduced quickly and effectively. SOLUTION: This chemical mechanical polishing method is characterized preferably by at least one step of simultaneously using a fixed-abrasive polishing member and an aqueous liquid medium containing an abrasive. When the first oxide layer to be polished has topographic variation, a topography reducing step using the fixed abrasive and an aqueous liquid medium containing a polyelectrolyte may be performed as part of the polishing method, including the reduction of the topography variation (height difference) extended to the oxide layer provided on a substrate before performing this thickness reducing method.

公开(公告)号：JP2002313717A

公开(公告)日：2002-10-25

申请号：JP2002062283

申请日：2002-03-07

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： GENZ OLIVER ,  PREUNINGER JURGEN ,  GERHARD KUNKEL

IPC: G03F7/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a patterning process and a patterning apparatus which avoid restrictions in mask inspections and problems at alignment and compensates the line shortening, the problem in the prior part. SOLUTION: The process comprises a step of covering a wafer surface with a mask and a step of transferring a mask pattern to the wafer surface with a specified magnification. In the step of transferring the mask pattern the wafer is moved horizontally at a first velocity, while the mask is moved horizontally at a second velocity to expose a part of the wafer surface wherein the first and second velocities differ from each other and the ratio of the first velocity to the second velocity is different from the magnifying power.

公开(公告)号：JP2002312201A

公开(公告)日：2002-10-25

申请号：JP2002046093

申请日：2002-02-22

Applicant: IBM ,  INFINEON TECHNOLOGIES CORP

Inventor： EDWARDS MARK S ,  AHRENS GEORGE H ,  BENIGNUS DOUGLAS M ,  TYSOR ARTHUR J

IPC: G06F11/30 ,  G06F9/46 ,  G06F9/48 ,  G06F11/00 ,  G06F11/07

Abstract: PROBLEM TO BE SOLVED: To disclose a method for processing a log restoration measure in a logically partitioned(LPAR) multiprocessing system. SOLUTION: A system and a method relating to this invention solve a problem that same actions need to be executed in plural sections by adopting a notification method using a focal point of single control. When the focal point determines that an executed action is common to other sections, the action is broadcast to other sections by the focal point to eliminate necessity of visiting every sections and repeating the action. Every receiver side section renews log restoration measure record thereof by using broadcast information. Consequently, a shortened restoration scenario of an active operation section and less interruptions are given to provide a user with increased possibility of the system to provide higher satisfaction.

公开(公告)号：JP2002050701A

公开(公告)日：2002-02-15

申请号：JP2001197112

申请日：2001-06-28

Applicant: IBM ,  INFINEON TECHNOLOGIES CORP

Inventor： THOMAS W DAYER ,  LOUIS L SHEW ,  DAVID L KOTEKI ,  KARL J REEDENSU ,  GERHARD KUNKEL ,  LI HONG ,  YOUNG LIM ,  YON JIN PAKU

IPC: H01L21/768 ,  H01L21/8242 ,  H01L23/522 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To provide a DRAM cell which eliminates critical photolithorgraphic fabrication steps by merging stacked capacitor construction with electrical contacts, and to provide a method of fabrication thereof. SOLUTION: It is sufficient to conduct in one lithography step to form electrical contacts, because the stacked capacitors are on the same plane as bit lines and the stacked capacitors are located in a insulating material provided between the bit lines. Unlike the conventional capacitor-over-bit line(COB) DRAM cells having the capacitors on the bit lines, this DRAM cell having capacitors adjacent to the bit lines eliminates the need to have dedicated contacts in the capacitor, making it possible to realize higher capacitance with lower global topography.

公开(公告)号：JP2001189080A

公开(公告)日：2001-07-10

申请号：JP37570099

申请日：1999-12-28

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： MUELLER GERHARD ,  HOENIGSCHMID HEINZ

IPC: G11C11/409 ,  G11C16/06

Abstract: PROBLEM TO BE SOLVED: To reduce size of a sense amplifier without degrading capability or functionality of a sense amplifier. SOLUTION: This device has a latch coupled to a first bit line and a second bit line, and a driver having an input side and an output side connected to the latch, this driver is operated so that an active input signal activating this driver is received, over-drive voltage is increased by this active input signal, and the driver is operated with an amplified over-drive mode.