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公开(公告)号：KR1020100121418A
公开(公告)日：2010-11-17
申请号：KR1020100040860
申请日：2010-04-30
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , C23C16/455
CPC classification number: H01L21/28556 , C23C16/06 , C23C16/455 , C23C16/509
Abstract: PURPOSE: A film depositing method and a plasma film apparatus are provided to exhale the air inside the treatment container to be vacuum from periphery by including a pressure control valve and a vacuum pump. CONSTITUTION: A bottom part(24) of the treatment basin(22) is formed with an exhaust pipe(26) for discharging the air within the container. The exhaust pipe is connected with a vacuum exhausting system(28). The vacuum exhausting system comprises a ventilating passage(29) connected to the exhaust pipe.
Abstract translation: 目的：提供一种薄膜沉积方法和等离子体薄膜装置，用于通过包括压力控制阀和真空泵从周围喷出处理容器内的空气以使其成为真空。 构成：处理池（22）的底部（24）形成有用于排出容器内的空气的排气管（26）。 排气管与真空排气系统（28）连接。 真空排气系统包括连接到排气管的通风通道（29）。
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公开(公告)号：KR1020080098387A
公开(公告)日：2008-11-07
申请号：KR1020087020955
申请日：2007-02-27
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: C23C16/18 , H01L21/285
CPC classification number: C23C16/06 , C23C16/045 , C23C16/18 , C23C16/4405 , C23C16/45525 , H01L21/28556 , H01L21/76843
Abstract: A substrate is placed in a processing vessel and heated. Into the processing vessel are introduced a ruthenium pentadienyl compound gas, e.g., 2,4-dimethylpentadienylethylcyclo-pentadienylruthenium, and oxygen gas. These gases are reacted on the heated substrate to deposit a ruthenium film on the substrate. Alternatively, a substrate is placed in a processing vessel and heated. A ruthenium compound gas and a decompositing gas capable of decomposing this compound are introduced so that the flow rate of at least either of these changes periodically to form alternating steps which differ in gas composition. These gases are reacted on the heated substrate without purging the processing vessel between those steps to thereby deposit a ruthenium film on the substrate.
Abstract translation: 将基板放置在处理容器中并加热。 引入处理容器中的钌戊二烯基化合物气体，例如2,4-二甲基戊二烯基乙基环戊二烯基钌和氧气。 这些气体在加热的衬底上反应，以在衬底上沉积钌膜。 或者，将基板放置在处理容器中并加热。 引入钌化合物气体和能够分解该化合物的分解气体，使得其中的至少任一种的流量周期性地变化，形成气体组成不同的交替步骤。 这些气体在加热的基板上反应而不在这些步骤之间吹扫处理容器，从而在基板上沉积钌膜。
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公开(公告)号：KR1020080073336A
公开(公告)日：2008-08-08
申请号：KR1020087014405
申请日：2006-11-24
Applicant: 도쿄엘렉트론가부시키가이샤
CPC classification number: C23C16/16 , C23C8/16 , C23C8/36 , C23C16/56 , H01L21/28079 , H01L21/28176 , H01L29/495 , H01L29/517
Abstract: On a Si substrate (1), i.e., a semiconductor substrate, a gate insulating film (2) is formed, and then a W film (3a) is formed on the gate insulating film (2) by CVD wherein a film forming gas including W(CO)6 gas is used. Then, the film is oxidized under existence of the reducing gas, and the W in the W film (3a) is not oxidized but only C is selectively oxidized to reduce the concentration of C contained in the W film (3a). Then, after performing heat treatment as needed, resist coating, patterning, etching and the like are performed, then, an impurity diffused region (10) is formed by ion implantation and the like, and a semiconductor device having a MOS structure is formed.
Abstract translation: 在Si衬底（1）即半导体衬底上形成栅极绝缘膜（2），然后通过CVD在栅极绝缘膜（2）上形成W膜（3a），其中成膜气体包括 使用W（CO）6气体。 然后，在存在还原气体的情况下，膜被氧化，并且W膜（3a）中的W不被氧化，而仅选择性地氧化C以降低W膜（3a）中所含的C的浓度。 然后，根据需要进行热处理后，进行抗蚀剂涂布，图案化，蚀刻等，然后通过离子注入等形成杂质扩散区域（10），形成具有MOS结构的半导体器件。
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公开(公告)号：KR1020080039514A
公开(公告)日：2008-05-07
申请号：KR1020087007208
申请日：2006-07-25
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: C23C16/44 , H01L21/304
CPC classification number: C23C16/0227 , C23C16/16 , C23C16/34 , C23C16/4405
Abstract: This invention provides a method for treating a substrate by a film forming apparatus comprising a holding table with heating means for holding a substrate to be treated and a treatment container having the holding table in its interior. The method is characterized by comprising a film formation step of feeding a film forming gas into the treatment container to form a film on the substrate, a cleaning step of feeding a cleaning gas excited by plasma into the treatment container after the film formation step to clean the inside of the treatment container, and a coating step of forming a coating within the treatment container after the cleaning step, the cleaning step comprising a high pressure step of regulating the pressure within the treatment container so that cleaning with molecules of plasma excited recombined radicals contained in the cleaning gas is dominative, the coating step comprising a low-temperature film formation step of forming the coating film at a holding table temperature below the temperature at which the film formation on the substrate in the film formation step is carried out.
Abstract translation: 本发明提供一种通过成膜装置处理基板的方法，该成膜装置包括具有用于保持待处理基板的加热装置的保持台和在其内部具有保持台的处理容器。 该方法的特征在于包括将成膜气体供给到处理容器中以在基板上形成膜的成膜步骤，在成膜步骤之后将清除气体供给到处理容器中的清洗步骤 处理容器的内部以及在清洁步骤之后在处理容器内形成涂层的涂布步骤，所述清洁步骤包括调节处理容器内的压力的高压步骤，以便用等离子体激发的重组基团的分子 包含在清洁气体中的涂布步骤是主要的，所述涂布步骤包括在保持台温度以下的低温成膜步骤，所述保持台温度低于在成膜步骤中在基材上形成膜的温度。
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公开(公告)号：KR100788056B1
公开(公告)日：2007-12-21
申请号：KR1020077019006
申请日：2001-12-14
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/324 , H01L21/205 , H01L21/02
CPC classification number: H01L21/68721 , C23C16/4585 , H01L21/67103 , H01L21/67115 , H01L21/6835 , H01L2924/3025
Abstract: 박막이 웨이퍼의 처리면에 증착되고 웨이퍼가 처리실의 외부로 분출된 후에, 클램프의 접촉 돌출부가 서섭터와 접촉하여 클램프를 가열한다. 그 후에, 박막이 증착되지 않은 웨이퍼가 반입될 때 클램프를 상승시키는 것에 의해서 웨이퍼가 서셉터상에 배치된다. 그 후에, 클램프는 웨이퍼와 접촉하게 되고 웨이퍼는 소정 온도로 안정화된다. 그 후에, 웨이퍼의 처리면에 박막이 증착된다.
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Patent Agency Ranking
公开(公告)号：KR1020070058497A
公开(公告)日：2007-06-08
申请号：KR1020077005723
申请日：2005-09-21
Applicant: 도쿄엘렉트론가부시키가이샤 , 인터내셔널 비지네스 머신즈 코포레이션
IPC: H01L21/28
CPC classification number: H01L21/28556 , C23C16/16 , H01L21/28079 , H01L21/28247 , H01L21/76843 , H01L21/7685 , H01L21/76856 , H01L29/517
Abstract: A method for forming a passivated metal layer that preserves the properties and morphology of an underlying metal layer during subsequent exposure to oxygen-containing ambients. The method includes providing a substrate (50, 302, 403, 510) in a process chamber (1), exposing the substrate (50, 302, 403, 510) to a process gas containing a rhenium-carbonyl precursor to deposit a rhenium metal layer (304, 408, 508) on the substrate (50, 302, 403, 510) in a chemical vapor deposition process, and forming a passivation layer (414, 590) on the rhenium metal layer (304, 408, 580) to thereby inhibit oxygen-induced growth of rhenium-containing nodules (306) on the rhenium metal surface.
Abstract translation: 用于形成钝化金属层的方法，其在随后暴露于含氧环境期间保持下面的金属层的性质和形态。 该方法包括在处理室（1）中提供衬底（50,302,403,510），将衬底（50,302,403,510）暴露于含有铼 - 羰基前体的工艺气体中以沉积铼金属 在化学气相沉积工艺中在衬底（50,302,403,510）上形成钝化层（304,408,508），以及在铼金属层（304,408,580）上形成钝化层（414,590）至 从而抑制铼金属表面上含铼结核（306）的氧诱导生长。
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公开(公告)号：KR100691758B1
公开(公告)日：2007-03-12
申请号：KR1020057024820
申请日：2002-03-14
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , C23C16/02 , H01L21/02 , H01L21/44
CPC classification number: H01L28/65 , C23C16/0218 , C23C16/0236 , C23C16/18 , C23C16/452 , C23C16/45523 , H01L21/3105 , H01L21/31612 , H01L28/55 , H01L28/60 , H01L28/90
Abstract: 본 발명에 따르면, 반도체 기판(101)은 소정의 처리 용기내에 배치되고, 예를 들어 플라즈마로의 전환에 의해 활성화된 산소 기체가 절연 막(108)상에 공급된다. 층간 절연 막(106) 및 절연 막(108)의 표면이 활성화된 산소 기체에 노출된다. 그 후, CVD에 의해 루테늄 막(109)이 형성된다.
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公开(公告)号：KR100671359B1
公开(公告)日：2007-01-22
申请号：KR1020027001083
申请日：2000-07-21
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L27/108
Abstract: 가스 공급원(10A)은 전처리를 행하기 때문에, 금속막이 성장하기 위한 핵의 형성을 억제하는 WF
6 가스를 처리 대상인 반도체 웨이퍼(W)의 표면에 소정 시간 공급한다. 전처리를 행한 후, 가스 공급원(10A) 및 가스 공급원(10B)은 전처리가 행해진 반도체 웨이퍼(W)의 표면에 각각 WF
6 가스, NH
3 가스를 소정 시간 공급한다. 이로써 표면에 요철 형상을 갖는 금속 화합물인 질화텅스텐막을 반도체 웨이퍼(W) 위에 형성한다. 컨트롤러(51)는 미리 제공된 프로그램 등에 따라 가스 공급원(10A, 10B) 등의 동작을 제어한다.-
公开(公告)号：KR1020060006854A
公开(公告)日：2006-01-19
申请号：KR1020057024820
申请日：2002-03-14
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , C23C16/02 , H01L21/02 , H01L21/44
CPC classification number: H01L28/65 , C23C16/0218 , C23C16/0236 , C23C16/18 , C23C16/452 , C23C16/45523 , H01L21/3105 , H01L21/31612 , H01L28/55 , H01L28/60 , H01L28/90
Abstract: A semiconductor substrate (101) is placed in a predetermined processing vessel, and oxygen gas activated by, e.g., conversion into a plasma is supplied onto an insulating film (108). The surfaces of an interlevel insulating film (106) and insulating film (108) are exposed to the activated oxygen gas. After that, a ruthenium film (109) is formed by CVD.
Abstract translation: 将半导体衬底（101）放置在预定的处理容器中，并且通过例如转换成等离子体而激活的氧气被提供到绝缘膜（108）上。 层间绝缘膜（106）和绝缘膜（108）的表面暴露于活性氧气。 之后，通过CVD形成钌膜（109）。
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公开(公告)号：KR1020050021450A
公开(公告)日：2005-03-07
申请号：KR1020057000404
申请日：2003-07-10
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: C23C16/45561 , C23C16/16 , C23C16/4412
Abstract: 본 발명의 성막장치(100)는 소스 가스를 생성하기 위한 원료를 넣는 원료 용기(10)와, 반도체 기판(101)에 성막 처리를 실행하기 위한 성막실(120)과, 원료 용기(10)로부터 성막실(120)에 상기 소스 가스를 공급하기 위한 원료 공급로(30)와, 터보분자 펌프(14) 및 드라이 펌프(16)로 이루어지는 진공 펌프 시스템을 가진, 성막실(120)을 배기하기 위한 배기 유로(32)와, 원료 공급로(30)로부터 분기하여 성막실(120) 및 터보분자 펌프(14)를 바이패스하여 배기 유로(32)에 합류하는 프리 플로우 유로(33)를 구비하고, 원료 공급로(30)는 6.4mm보다 큰 내경의 배관을 포함하고, 프리 플로우 유로(33)에 터보분자 펌프(15)가 마련된 것을 특징으로 한다.
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