公开(公告)号：KR1020140094475A

公开(公告)日：2014-07-30

申请号：KR1020140007914

申请日：2014-01-22

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 야마구치신 ,  하야시다이스케 ,  구도야스히사

IPC: H01L21/683 ,  H01L21/3065

CPC classification number: H01L21/68742 ,  H01J37/32715 ,  H01J37/32733 ,  H01L21/6831 ,  Y10T279/23

Abstract: The present invention provides a mounting table capable of preventing discharge and a plasma processing apparatus having the mounting table. According to the present invention, the mounting table comprises: an electrostatic chuck having a mounting side on which a processed material is mounted and the other side facing the mounting side having a first through hole in the mounting side; a base combined with the other side of the electrostatic chuck having a second through hole connected to the first through hole; and a lifter pin accommodated in the first through hole and the second through hole, vertically moving to be able to appear and disappear on the mounting side, and supporting the processed material on the mounting side. The upper end of the first through hole has the form whose diameter becomes smaller towards the lower end, and the upper end of the lifter pin has the form whose diameter becomes smaller towards the lower end to correspond to the form of the upper end of the first through hole. The lifter pin surface-contacts the upper end of the first through hole when the lifter pin is accommodated in the first through hole and the second through hole.

Abstract translation: 本发明提供一种能够防止放电的安装台和具有安装台的等离子体处理装置。 根据本发明，安装台包括：静电卡盘，其具有安装侧的安装侧，并且安装侧的另一侧在安装侧具有第一通孔; 与静电卡盘的另一侧结合的底座具有连接到第一通孔的第二通孔; 以及容纳在所述第一通孔和所述第二通孔中的升降器销，其垂直移动以能够在所述安装侧出现并消失，并且将所述处理材料支撑在所述安装侧。 第一通孔的上端具有朝向下端的直径变小的形式，并且提升销的上端具有朝向下端的直径变小的形状，以对应于下端的形状 第一通孔。 当升降器销被容纳在第一通孔和第二通孔中时，升降器销表面接触第一通孔的上端。

公开(公告)号：KR1020140094450A

公开(公告)日：2014-07-30

申请号：KR1020140005866

申请日：2014-01-17

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 하야시다이스케

IPC: H01L21/683 ,  H02N13/00 ,  B23Q3/15

CPC classification number: H02N13/00

Abstract: The present invention is to have a uniform gap between an electrostatic chuck having a heater pattern formed on the underside and the surface of a base member. According to an embodiment, a bonding method for bonding an electrostatic chuck and a base member forms a charging part (30) by charging uneven steels having the heater pattern (9a), which is formed on the underside (61) facing the base member (10) among the surfaces of the electrostatic chuck (9). According to the embodiment, the bonding method polishes a base member contact surface (62) facing the base member (10) among the surfaces of the charging part (30). According to the embodiment, the polished base member contact surface (62) of the charging part (30) is bonded to the base member (10) by interposing an adhesive layer (31).

Abstract translation: 本发明是在具有形成在下侧的加热器图案的静电卡盘与基座部件的表面之间具有均匀的间隙。 根据一个实施例，用于接合静电卡盘和基座构件的接合方法通过对形成在与基座构件相对的下侧面（61）上的具有加热器图案（9a）的不均匀钢进行充电而形成充电部（30） 10）在静电卡盘（9）的表面之间。 根据本实施方式，接合方法在充电部（30）的表面之间对与基材（10）相对的基材接触面（62）进行抛光。 根据本实施方式，通过插入粘合剂层（31）将充电部（30）的研磨后的基材接触面（62）与基材（10）接合。

公开(公告)号：KR1020110107286A

公开(公告)日：2011-09-30

申请号：KR1020110025701

申请日：2011-03-23

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 하야시다이스케 ,  나가세키가즈야

IPC: H01L21/02 ,  H01L21/82 ,  H01L21/205 ,  C23C16/455 ,  H01L21/48

CPC classification number: H01L21/0203 ,  C23C16/45565 ,  H01L21/02 ,  H01L21/02063 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/0234 ,  H01L21/0273 ,  H01L21/205 ,  H01L21/30621 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/486 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/8213 ,  H05H1/46

Abstract: 작업 공수, 특히 구멍 가공 공수를 저감할 수 있는 기판 처리 장치용의 다공판의 제조 방법을 제공한다. 미리 다수의 제 1 관통 구멍(42)이 형성된 카본 기대(41)의 표면에 화학 증착(CVD)법에 의해 예컨대 두께 5㎜의 SiC 막(43)을 형성시키고, 그 후, 제 1 관통 구멍(42)에 대응하는 제 2 관통 구멍(44)이 다수 마련된 표층의 다공 SiC 막(43)을 절출하고, 가열해서 SiC 막(43)에 부착된 카본을 연소, 제거하고, 필요에 따라 표면을 연삭하며, 또한 표면 처리를 실시한다.

公开(公告)号：KR1020110076815A

公开(公告)日：2011-07-06

申请号：KR1020100136159

申请日：2010-12-28

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 히모리신지 ,  하야시다이스케 ,  시미즈아키타카

IPC: H05H1/46 ,  H05H1/34

CPC classification number: H01L21/67069 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/3255 ,  H01J37/32577 ,  H01J37/32605 ,  H05H1/46 ,  H01J37/32 ,  H01L21/67 ,  H05H1/34

Abstract: PURPOSE: An apparatus for processing plasma and an electrode used therefor are provided to control the distribution of high frequency electric field strength by forming a plasma generation space. CONSTITUTION: A subject is processed by plasma in a processing container(100). A counter electrode and a supplying electrode face each other inside the processing container. The counter electrode and the supplying electrode form a plasma generation space. A high frequency power(150) is connected to the supplying electrode and outputs the high frequency power into the supplying electrode. At least one of the counter electrode(105) and the supplying electrode(110) includes the base material formed with metal and the dielectric substance inserted in the base material.

Abstract translation: 目的：提供一种用于处理等离子体的设备和用于其的电极，用于通过形成等离子体产生空间来控制高频电场强度的分布。 构成：受试者在处理容器（100）中由等离子体处理。 对置电极和供电电极在处理容器内部彼此面对。 对电极和供电电极形成等离子体产生空间。 高频功率（150）连接到供电电极，并将高频电力输出到供电电极。 相对电极（105）和供电电极（110）中的至少一个包括形成有金属的基材和插入基材中的电介质。

公开(公告)号：KR1020080084565A

公开(公告)日：2008-09-19

申请号：KR1020077023337

申请日：2006-12-12

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 도자와시게키 ,  무라키유스케 ,  이이노다다시 ,  하야시다이스케

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/306

CPC classification number: H01L21/02057 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/7848

Abstract: Disclosed is a substrate processing apparatus which enables to prevent adhesion of hydrogen fluoride onto the inner surface of a chamber or the like. Specifically disclosed is an apparatus in which a substrate W is held inside a chamber and processed therein. The apparatus comprises a hydrogen fluoride gas supply channel (61) for supplying a hydrogen fluoride gas into a chamber (40), and a part or the entire of the inner surface of the chamber (40) is made of Al or an Al alloy which is not subjected to a surface oxidation treatment. The chamber (40) comprises a cover member (52) for closing the upper opening of a chamber main body (51), and at least the inner surface of the cover member (52) is made of Al or an Al alloy which is not subjected to an alumite treatment.

Abstract translation: 公开了一种能够防止氟化氢粘附到室等的内表面上的基板处理装置。 具体公开了将基板W保持在室内并进行处理的装置。 该装置包括用于将氟化氢气体供应到室（40）中的氟化氢气体供给通道（61），并且室（40）的内表面的一部分或全部由Al或Al合金制成， 不进行表面氧化处理。 所述室（40）包括用于封闭室主体（51）的上部开口的盖构件（52），并且所述盖构件（52）的至少内表面由Al或Al合金制成 进行耐氧化铝处理。

公开(公告)号：KR1020080070560A

公开(公告)日：2008-07-30

申请号：KR1020080007626

申请日：2008-01-24

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 하야시다이스케

IPC: H01L21/205

CPC classification number: C23C16/54 ,  C23C16/4401 ,  C23C16/4411

Abstract: A substrate processing apparatus is provided to introduce process gas into a process chamber while an introduction pipe for introducing the process gas isn't connected to an upper cover, by forming an introduction path for introducing the process gas in the process chamber. An upper cover(35) of a substrate processing apparatus includes a gas supply part for supplying process gas to the inside of a process chamber, and one end of the upper cover is connected to the gas supply part so that a first gas introduction hole(40) for introducing the process gas to a corresponding gas supply part is formed in the upper cover. One end of a process receptacle(33) for receiving a substrate is connected to a supply source of the process gas so that a second gas introduction hole(42) for introducing the corresponding process gas from a corresponding supply source is formed in the process receptacle. When the upper cover gears with the process receptacle, the other end of the first gas introduction hole is connected to the other end of the second gas introduction hole. A first temperature adjust unit(41) adjusts the temperature of the upper cover, and a second temperature adjust unit(45) adjusts the temperature of the process receptacle.

Abstract translation: 提供基板处理装置，通过形成用于将处理气体引入处理室的引入路径，将处理气体引入处理室，同时用于引入处理气体的引入管未连接到上盖。 基板处理装置的上盖（35）包括用于向处理室的内部供给处理气体的气体供给部，并且上盖的一端与气体供给部连接，使得第一气体导入孔（ 40）用于将处理气体引入到相应的气体供应部分。 用于接收基板的处理容器（33）的一端连接到处理气体的供应源，从而在处理容器中形成用于将来自相应供应源的相应处理气体引入的第二气体导入孔（42） 。 当上盖齿轮与处理容器时，第一气体导入孔的另一端连接到第二气体导入孔的另一端。 第一温度调节单元（41）调节上盖的温度，第二温度调节单元（45）调节处理容器的温度。

公开(公告)号：KR100839250B1

公开(公告)日：2008-06-17

申请号：KR1020060118166

申请日：2006-11-28

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 하야시다이스케

IPC: H01L21/3065

Abstract: 본 발명은, 기판에 대향하여 마련되고, 금속베이스와 도체판으로 구성되는 플라즈마 생성용 전극에 있어서, 도체판 파괴의 우려가 없고, 금속베이스와 도체판이 전기도통 및 열전달에 대하여 면내 균일성이 높은 접합상태를 확보하는 것을 목적으로 한다.
다공질 세라믹으로 이루어지는 모재 예컨대 탄화규소에 금속 예컨대 실리콘을 함침시켜, 적어도 기판의 피처리면의 전면과 대향하는 접합면을 구비한 금속기복합재와, 이 금속기복합재의 접합면에 금속에 의해 용탕접합된 내플라즈마성 재질로 이루어지는 도체판 예컨대 CVD-탄화규소에 의해 전극을 구성한다. 이 경우, 상기 모재에 금속을 함침할 때에 해당 금속에 의해 도체판이 금속기복합재에 용탕접합시킬 수 있다.

公开(公告)号：KR1020080039809A

公开(公告)日：2008-05-07

申请号：KR1020070110111

申请日：2007-10-31

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 하야시다이스케

IPC: H01L21/306

CPC classification number: H01L21/0206 ,  H01L21/3065 ,  H01L21/31116

Abstract: A substrate processing method and system are provided to simplify a substrate process and to prevent reduction of productivity by removing a deposit layer and a second oxide layer of a single crystal silicon substrate base. A substrate processing method includes a process for processing a substrate having a single crystal silicon substrate base(71), a first oxide layer formed by a thermal oxidation process, and a second oxide layer containing an impurity. A part of the single crystal silicon substrate base is exposed through the first and second oxide layers. The substrate processing method further includes a plasma etch process for etching the exposed single crystal silicon substrate base by using plasma of a halogen-based gas, an HF gas supply process for supplying HF gas toward the substrate, and a substrate heating process for heating the substrate for receiving HF gas.

Abstract translation: 提供基板处理方法和系统以简化基板工艺并通过去除单晶硅基板基底的沉积层和第二氧化物层来防止生产率降低。 基板处理方法包括处理具有单晶硅基板基板（71）的基板，通过热氧化工艺形成的第一氧化物层和含有杂质的第二氧化物层的工艺。 单晶硅衬底基底的一部分通过第一和第二氧化物层而露出。 基板处理方法还包括通过使用卤素系气体的等离子体，向基板供给HF气体的HF气体供给工序以及基板加热工序来对暴露的单晶硅基板基板进行蚀刻的等离子体蚀刻工序 用于接收HF气体的基板。

公开(公告)号：KR100619112B1

公开(公告)日：2006-09-01

申请号：KR1020047003954

申请日：2002-09-19

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오노히루 ,  다테시타고이치 ,  혼다마사노부 ,  나가세키가즈야 ,  하야시다이스케

IPC: H01L21/302

CPC classification number: H01J37/32623 ,  H01J37/32688

Abstract: Each magnet segment 22 of a magnetic field forming mechanism 21 is constructed such that, after the magnetic pole of each magnet segment 22 set to face a vacuum chamber 1 as shown in FIG. 3 A, adjoining magnet segments 22 are synchronously rotated in opposite directions, and hence every other magnet element 22 is rotated in the same direction as shown in FIGS. 3 B, 3 C to thereby control the status of a multi-pole magnetic field formed in the vacuum chamber 1 and surrounding a semiconductor wafer W. Therefore, the status of a multi-pole magnetic field can be easily controlled and set appropriately according to a type of plasma processing process to provide a good processing easily.

Abstract translation: 磁场形成机构21的每个磁体段22被构造成使得在每个磁体段22的磁极设置为面对真空室1之后， 如图3A所示，相邻的磁体段22在相反的方向上同步旋转，并且因此每隔一个磁体元件22以如图3A和3B所示的相同方向旋转。 从而控制形成在真空室1中并围绕半导体晶片W的多极磁场的状态。因此，多极磁场的状态可容易地控制并根据 一种等离子体处理过程，以提供一个很好的处理。

公开(公告)号：KR1020030074833A

公开(公告)日：2003-09-19

申请号：KR1020037010739

申请日：2002-02-08

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 네즈다카아키 ,  호리구치가츠미 ,  하야시다이스케 ,  츠카하라도시야

IPC: H01L21/3065

CPC classification number: H01J37/32642 ,  H01J37/32623

Abstract: 플라즈마 처리 장치용 포커스 링은 피처리 기판(W)을 둘러싸도록 내측으로부터 순차적으로 내측 영역(12a), 중간 영역(12b) 및 외측 영역(12c)을 갖는다. 플라즈마에 노출되는 측에 있어서, 내측 영역(12a) 및 외측 영역(12c)의 표면은 유전체로 실질적으로 이루어지는 한편, 중간 영역(12b)의 표면은 전도체로 실질적으로 이루어진다. 중간 영역(12b)은, 중간 영역(12b)이 없는 경우에 피처리 기판(W)의 외주연부가 실질적으로 바로 위에 형성되는 플라즈마 밀도의 어떤 피크를 피처리 기판(W)의 외주연부보다 외측으로 이동시키도록 배치된다.