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公开(公告)号：KR100368790B1
公开(公告)日：2003-01-24
申请号：KR1020010001650
申请日：2001-01-11
Applicant: 한국과학기술연구원
IPC: G02B6/293
Abstract: PURPOSE: A method for implementing an electro-optic wavelength convertor by using a horizontal coupling of semiconductor laser and a semiconductor optical amplifier is provided to secure a wide range of input power since the method does not need a conventional Mach-Zender interferometer structure, thereby utilizing a characteristics of a conventional semiconductor laser such as a variable wavelength laser diode. CONSTITUTION: A method for implementing an electro-optic wavelength convertor by using a horizontal coupling of semiconductor laser and a semiconductor optical amplifier includes steps of etching end portions(100a,100b) of at least one of a first and a second waveguides(100,200), anti-reflection coating the end portions(100a,100b) and dividing the first and the second waveguides(100,200) by cleaving to thereby obtain a divided reflection surface and a divided anti-reflection surface, respectively. An active laser provided thereon with the first and the second waveguides(100,200) utilized in the method is made of InGaAsP and constructed into a multi-quantum well structure.
Abstract translation: 目的：提供一种通过使用半导体激光器和半导体光学放大器的水平耦合来实现电光波长转换器的方法，以确保宽范围的输入功率，因为该方法不需要传统的Mach-Zender干涉仪结构， 利用诸如可变波长激光二极管的常规半导体激光器的特性。 本发明涉及一种通过使用半导体激光器和半导体光学放大器的水平耦合来实现电光波长转换器的方法，包括以下步骤：蚀刻第一和第二波导（100,200）中的至少一个的端部（100a，100b） ，防反射涂覆端部（100a，100b）并且通过劈开分割第一和第二波导（100,200），从而分别获得分开的反射表面和分开的防反射表面。 其上提供有用于该方法中的第一和第二波导（100,200）的有源激光器由InGaAsP制成并构建成多量子阱结构。
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公开(公告)号：KR100361035B1
公开(公告)日：2002-11-18
申请号：KR1020000005631
申请日：2000-02-07
Applicant: 한국과학기술연구원
IPC: H01L31/14
Abstract: 본 발명은 스스로 뭉쳐서 형성된 양자점에서 나오는 광의 스펙트럼이 매우 넓은 것을 이용하여 반도체 광 증폭기의 이득 대역폭을 확장하는 방법에 관한 것이다.
더 상세하게는 InGaAs/InGaAsP/InP 양자우물 반도체 광증폭기의 이득 대역폭 확장방법에 있어서, 소정 두께의 InP 버퍼층을 성장시키는 과정과, 상기 InP 버퍼층 성장후 소정 가스를 공급하는 제1 가스 공급 과정과, 상기 InP 버퍼층 위로 InAs 단일 우물 구조층을 성장시키는 과정과, 상기 InAs 층 성장 후 소정 가스를 공급하여 격자 상수가 맞지 않는 상기 InAs 층이 서로 뭉쳐서 양자점을 형성하도록 하는 제2 가스 공급 과정과, 상기 InAs 층 위로 소정 두께의 InP 캡층을 성장시키는 과정으로 양자점을 생성하여 반도체 광 증폭기의 이득영역으로 양자점을 도입하고, 상기 InAs가 서로 뭉치면서 각 점들의 크기와 높이가 불균일하게 서로 독립적인 점을 형성하게 함을 특징으로 한다.-
公开(公告)号：KR1020020049493A
公开(公告)日：2002-06-26
申请号：KR1020000078678
申请日：2000-12-19
Applicant: 한국과학기술연구원
IPC: G02B26/02
CPC classification number: G02B5/1857 , G03H2260/14
Abstract: PURPOSE: A method for generating a large area holographic grating and an apparatus thereof are provided, which fabricates a large area grating below an effective area of a lens as using an optical system of small caliber. CONSTITUTION: A light projected by an ultraviolet ray laser(10) of a single wavelength is focused to a pin hole(14) with an object lens(12) and then passes through a spatial lens removing noise in the air, and then the beam extended using a collimating lens(16) and passes through an inverse Gaussian transparent filter(22) and is irradiated to a sample(18) in parallel. The sample is located to have an angle to a path of the light, and a mirror(20) is attached to the sample so that a reflected light has a specific angle with the incident light to control an interval of an interference pattern.
Abstract translation: 目的：提供一种用于生成大面积全息光栅的方法及其装置，其使用小口径光学系统在透镜的有效区域下方制造大面积的光栅。 构成：将由单一波长的紫外线激光器（10）投影的光聚焦到具有物镜（12）的针孔（14），然后通过空间透镜去除空气中的噪声，然后将光束 使用准直透镜（16）延伸并通过反相高斯透明滤光器（22）并且平行地照射到样品（18）。 样品被定位成与光的路径成一角度，并且反射镜（20）附着到样品上，使得反射光与入射光具有特定的角度，以控制干涉图案的间隔。
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公开(公告)号：KR1020010077673A
公开(公告)日：2001-08-20
申请号：KR1020000005629
申请日：2000-02-07
Applicant: 한국과학기술연구원
IPC: H01S5/20
Abstract: PURPOSE: A wavelength transformation system for increasing an extinction ratio and a wavelength transformation bandwidth of an optical signal is provided to increase an extinction ratio and a wavelength transformation bandwidth of an optical signal by coupling a wavelength transformation process due to a four-wave mixing phenomenon of a semiconductor optical amplifier and a wavelength transformation process due to a four-wave mixing phenomenon of a distributed transaction fiber. CONSTITUTION: The first wavelength transformer(100) receives a DFB(Distributed FeedBack) semiconductor laser beam and a variable wavelength semiconductor laser beam and performs a wavelength transformation process due to a four-wave mixing phenomenon of a semiconductor optical amplifier. The second wavelength transformer(110) receives an output signal of the first wavelength transformer(100) and the variable wavelength semiconductor laser beam and performs a wavelength transformation process due to the four-wave mixing phenomenon of a distributed transaction fiber.
Abstract translation: 目的：提供一种用于增加光信号消光比和波长变换带宽的波长变换系统，通过耦合由于四波混频现象引起的波长变换过程来增加光信号的消光比和波长变换带宽 的半导体光放大器和由于分布式事务光纤的四波混频现象引起的波长变换处理。 构成：第一波长变换器（100）接收DFB（分布式反馈）半导体激光束和可变波长半导体激光束，并且由于半导体光放大器的四波混频现象而进行波长变换处理。 第二波长变换器（110）接收第一波长变换器（100）的输出信号和可变波长半导体激光束，并且由于分布式交易光纤的四波混频现象而进行波长变换处理。
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35.发明公开
公开(公告)号：KR1020010036949A
公开(公告)日：2001-05-07
申请号：KR1019990044158
申请日：1999-10-12
Applicant: 한국과학기술연구원
IPC: H01L21/18
Abstract: PURPOSE: A method for locally forming a different band gap in a quantum well by a dielectric-semiconductor composite cover layer is provided to regulate a degree of disorder of the quantum well. CONSTITUTION: The method begins with growing an InGaAs/InGaAsP quantum well substrate by a chemical beam epitaxy technique. Next, a dielectric thin layer made of such as SiO2 or SiNx is formed as a cover layer on the quantum well substrate by a plasma-enhanced chemical deposition technique. After a heat treatment step is carried out at a temperature of 600 - 800°C for 4 - 16 minutes, the dielectric thin layer is removed. In addition, InP, InGaAs or InGaAsP is used as a semiconductor cover layer.
Abstract translation: 目的：提供通过介电半导体复合覆盖层在量子阱中局部形成不同带隙的方法，以调节量子阱的无序程度。 构成：该方法开始于通过化学束外延技术生长InGaAs / InGaAsP量子阱衬底。 接下来，通过等离子体增强化学沉积技术在量子阱基板上形成由SiO 2或SiN x构成的电介质薄层作为覆盖层。 在600-800℃的温度下进行4-16分钟的热处理步骤后，去除电介质薄层。 此外，使用InP，InGaAs或InGaAsP作为半导体覆盖层。
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Patent Agency Ranking
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公开(公告)号：KR101878699B1
公开(公告)日：2018-07-18
申请号：KR1020160159111
申请日：2016-11-28
Applicant: 한국과학기술연구원
Abstract: 지렛대원리를이용한입자크기측정시스템및 이를이용한입자크기측정방법에서, 상기입자크기측정시스템은제1 플레이트및 제2 플레이트를포함한다. 상기제1 플레이트는제1 방향으로연장된다. 상기제2 플레이트는상기제1 플레이트와제1 끝단은서로접촉하며, 상기제1 플레이트와제2 끝단은소정간격이격되도록연장된다. 측정의대상이되는입자를포함한용액은상기제1 플레이트및 상기제2 플레이트사이의공간에채워진다. 상기제1 플레이트의전체길이, 상기제1 플레이트중 상기입자가채워지지않는공간의길이, 및상기제1 플레이트와상기제2 플레이트사이의이격간격을바탕으로상기입자의지름을연산한다.
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公开(公告)号：KR101860019B1
公开(公告)日：2018-05-23
申请号：KR1020150107955
申请日：2015-07-30
Applicant: 한국과학기술연구원
CPC classification number: B32B37/025 , B05C3/09 , B05C3/10 , B05C3/109 , B05D1/206 , B32B37/0046 , B32B2264/108 , C01B32/184
Abstract: 일실시예에따른그래핀습식전사장치는둘 이상의수조를포함하는수조본체와, 수조의상부에위치되며, 격벽들에의해형성된하나이상의분리공간을포함하는격벽구조물, 및격벽구조물의하부에위치되며, 그래핀이전사되는타겟기판을수용하는하나이상의기판수용홈이형성된기판틀을포함할수 있다. 여기서, 수조의각각에는습식전사공정을위한용액이채워지고, 분리공간의각각에는그래핀의각각이용액에부유된상태로서로분리되어위치될수 있다.
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