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公开(公告)号:WO2021004705A1
公开(公告)日:2021-01-14
申请号:PCT/EP2020/065577
申请日:2020-06-05
Applicant: ASML NETHERLANDS B.V.
Inventor: VAN DE KERKHOF, Marcus, Adrianus , ACHANTA, Satish , MOORS, Johannes, Hubertus, Josephina , BANINE, Vadim, Yevgenyevich , JANSSENS, Stef, Marten, Johan , NIKIPELOV, Andrey
IPC: G03F7/20 , G03F1/82 , G03F7/16 , H01L21/67 , H01L21/687
Abstract: A lithographic apparatus comprising: a clamping surface for supporting a substrate, wherein a property of the clamping surface is defined by at least one clamping surface parameter, and wherein the property of the clamping surface has been selected to exhibit low wear; a clamping apparatus for actuating a clamping operation between the clamping surface and the substrate, wherein the clamping operation is defined at least in part by at least one interface characteristic between the clamping surface and the substrate; and a processing station, operable to apply an adjustment to a first property of the substrate to optimize at least one interface characteristic of a particular clamping operation in dependence on the clamping surface parameter and at least one substrate surface parameter which defines a second property of the substrate.
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32.
公开(公告)号:WO2020135971A1
公开(公告)日:2020-07-02
申请号:PCT/EP2019/083027
申请日:2019-11-29
Applicant: ASML NETHERLANDS B.V.
IPC: G03F7/20 , H01L21/683 , H01L21/687
Abstract: A method of producing a substrate holder for use in a lithographic apparatus, the substrate holder comprising a main body having a main body surface, wherein the method includes the steps of: coating at least part of the main body with a layer of a first coating material; and treating a plurality of discrete regions of the first coating material with laser irradiation to selectively convert said first coating material in said regions to a second coating material having a different structure or density.
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公开(公告)号:WO2018166738A1
公开(公告)日:2018-09-20
申请号:PCT/EP2018/053761
申请日:2018-02-15
Applicant: ASML NETHERLANDS B.V.
Inventor: KLUGKIST, Joost, André , BANINE, Vadim, Yevgenyevich , BECKERS, Johan, Franciscus, Maria , JAMBUNATHAN, Madhusudhanan , NASALEVICH, Maxim, Aleksandrovich , NIKIPELOV, Andrey , STAS, Roland, Johannes, Wilhelmus , VLES, David, Ferdinand , WELTERS, Wilhelmus, Jacobus, Johannes , WRICKE, Sandro
Abstract: A sensor mark (17) comprising: a substrate (200) having: a first deep ultra violet (DUV) absorbing layer (310, 320, 330) comprising a first material which substantially absorbs DUV radiation; a first protecting layer (600) comprising a second material; wherein: the first DUV absorbing layer has a first through hole (500) in it; the first protecting layer is positioned, in plan, in the first through hole (500) and the first protecting layer in the first through hole has a patterned region comprising a plurality of through holes (700); and the second material is more noble than the first material.
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公开(公告)号:WO2015071066A1
公开(公告)日:2015-05-21
申请号:PCT/EP2014/072753
申请日:2014-10-23
Applicant: ASML NETHERLANDS B.V.
Inventor: BEIJSENS, Rolf, Theodorus, Nicolaas , FEENSTRA, Kornelis, Frits , DE JONG, Arjen, Teake , JILISEN, Reinier, Theodorus, Martinus , KLEEMANS, Niek, Antonius, Jacobus, Maria , NIKIPELOV, Andrey , SEROGLAZOV, Pavel , VAN ASTEN, Nicolaas, Antonius, Allegondus, Johannes , VERBRAAK, Harald, Ernest
IPC: H05G2/00
Abstract: A radiation system for generating a radiation emitting plasma, the radiation system comprising a fuel emitter (3) for providing a fuel target at a plasma formation region (4), a first laser (1) arranged to provide a first laser beam (2) at the plasma formation region incident on the fuel target to generate a radiation emitting plasma (7), an imaging device (10) arranged to obtain a first image of the radiation emitting plasma at the plasma formation region, the first image indicating at least one image property of the radiation emitting plasma, and a controller (11). The controller is arranged to receive the first image, and to generate at least one instruction based on the at least one image property of the radiation emitting plasma to modify operation of at least one component of the radiation system to reduce a detrimental effect of debris.
Abstract translation: 一种用于产生辐射发射等离子体的辐射系统,所述辐射系统包括用于在等离子体形成区域(4)处提供燃料靶的燃料发射器(3),布置成提供第一激光束(2)的第一激光器(1) 在等离子体形成区域入射到燃料对象上以产生辐射发射等离子体(7);成像装置(10),布置成获得在等离子体形成区域处的发射等离子体的第一图像,第一图像表示至少一个 辐射发射等离子体的图像特性,以及控制器(11)。 控制器布置成接收第一图像,并且基于辐射发射等离子体的至少一个图像特性生成至少一个指令,以修改辐射系统的至少一个分量的运算,以减少碎片的有害影响。
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公开(公告)号:WO2014202585A2
公开(公告)日:2014-12-24
申请号:PCT/EP2014/062691
申请日:2014-06-17
Applicant: ASML NETHERLANDS B.V.
Inventor: NIKIPELOV, Andrey , FRIJNS, Olav , DE VRIES, Gosse , LOOPSTRA, Erik , BANINE, Vadim , DE JAGER, Pieter , DONKER, Rilpho , NIENHUYS, Han-Kwang , KRUIZINGA, Borgert , ENGELEN, Wouter , LUITEN, Otger , AKKERMANS, Johannes , GRIMMINCK, Leonardus , LITVINENKO, Vladimir
IPC: H01S3/09
CPC classification number: G03F7/70033 , G01J1/0407 , G01J1/0418 , G01J1/26 , G01J1/429 , G02B1/06 , G02B5/205 , G02B26/023 , G03F7/70008 , G03F7/7055 , G03F7/70558 , G03F7/7085 , G21K1/10 , H01S3/005 , H01S3/0085 , H01S3/0903 , H05H7/04
Abstract: A method of patterning lithographic substrates, the method comprising using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates, wherein the method further comprises reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly.
Abstract translation: 一种图案化平版印刷基板的方法,所述方法包括使用自由电子激光器产生EUV辐射并将EUV辐射传送到将EUV辐射投影到平版印刷基板上的光刻设备,其中所述方法还包括减少EUV辐射的功率波动 通过使用基于反馈的控制回路来监测自由电子激光器并相应地调整自由电子激光器的操作而被传送到光刻基片。
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公开(公告)号:WO2014019803A1
公开(公告)日:2014-02-06
申请号:PCT/EP2013/064258
申请日:2013-07-05
Applicant: ASML NETHERLANDS B.V.
Inventor: NIKIPELOV, Andrey , DIJKSMAN, Johan , YAKUNIN, Andrei , IVANOV, Vladimir
IPC: H05G2/00
Abstract: A method for generating radiation. Directing a first body from a first location. Directing a second body from a second, different location. The first body and second body being used to form a target at a plasma formation location. At least one of the first body and second body comprising a fuel for use in generating a radiation generating plasma. Directing initiating radiation at the target at the plasma formation location to generate a radiation generating plasma from the target.
Abstract translation: 一种产生辐射的方法。 从第一个位置引导第一个身体。 从第二个不同的位置引导第二个身体。 用于在等离子体形成位置形成靶的第一体和第二体。 第一主体和第二主体中的至少一个包括用于产生辐射产生等离子体的燃料。 引导在等离子体形成位置处的目标处的发射辐射以产生来自靶的辐射产生等离子体。
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公开(公告)号:EP3011645B1
公开(公告)日:2019-03-13
申请号:EP14732153.3
申请日:2014-06-17
Applicant: ASML Netherlands B.V.
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38.
公开(公告)号:EP4094125A1
公开(公告)日:2022-11-30
申请号:EP20838574.0
申请日:2020-12-24
Applicant: ASML Holding N.V. , ASML Netherlands B.V.
Inventor: ALBRIGHT, Ronald, Peter , BAL, Kursat , BANINE, Vadim, Yevgenyevich , BRULS, Richard, Joseph , DE VRIES, Sjoerd, Frans , FRIJNS, Olav, Waldemar, Vladimir , HUANG, Yang-Shan , HUANG, Zhuangxiong , JACOBS, Johannes, Henricus, Wilhelmus , MOORS, Johannes, Hubertus, Josephina , NENCHEV, Georgi, Nenchev , NIKIPELOV, Andrey , RAASVELD, Thomas, Maarten , RANJAN, Manish , TE SLIGTE, Edwin , UMSTADTER, Karl, Robert , UZGÖREN, Eray , VAN DE KERKHOF, Marcus, Adrianus , YAGHOOBI, Parham
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39.
公开(公告)号:EP3903152A1
公开(公告)日:2021-11-03
申请号:EP19816233.1
申请日:2019-11-29
Applicant: ASML Netherlands B.V.
IPC: G03F7/20 , H01L21/683 , H01L21/687
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公开(公告)号:EP3584801A1
公开(公告)日:2019-12-25
申请号:EP19190727.8
申请日:2016-11-03
Applicant: ASML Netherlands B.V.
Inventor: DE JAGER, Pieter, Willem, Herman , BIJLSMA, Sipke, Jacob , FRIJNS, Olav, Waldemar, Vladimir , NIKIPELOV, Andrey , TEN KATE, Nicolaas , DERKSEN, Antonius, Theodorus, Anna, Maria , VERSPAY, Jacobus, Johannus, Leonardus, Hendricus , LANSBERGEN, Robert, Gabriël, Maria , KASTELIJN, Aukje, Arianne, Annette
Abstract: A radioisotope production apparatus (RI) comprising an electron source arranged to provide an electron beam (E). The electron source comprises an electron injector (10) and an electron accelerator (20). The radioisotope production apparatus (RI) further comprises a target support structure configured to hold a target (30) and a beam splitter (40) arranged to direct the a first portion of the electron beam (E) along a first path towards a first side of the target (30) and to direct a second portion of the electron beam (E) along a second path towards a second side of the target (30).
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