公开(公告)号：SG11201600138XA

公开(公告)日：2016-02-26

申请号：SG11201600138X

申请日：2014-07-01

Applicant: BASF SE

Inventor： REICHARDT ROBERT ,  KALLER MARTIN ,  LAUTER MICHAEL ,  LI YUZHUO ,  KLIPP ANDREAS

IPC: C09G1/02 ,  C09G1/00 ,  C09G1/04 ,  H01L21/02 ,  H01L21/321

Abstract: A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.

公开(公告)号：SG10201407348PA

公开(公告)日：2015-01-29

申请号：SG10201407348P

申请日：2010-11-10

Applicant: BASF SE

Inventor： LAUTER MICHAEL ,  RAMAN VIJAY IMMANUEL ,  LI YUZHUO ,  VENKATARAMAN SHYAM SUNDAR ,  SHEN DANIEL KWO-HUNG

Abstract: 23 Abstract A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING INORGANIC PARTICLES AND POLYMER PARTICLES A chemical mechanical polishing (CMP) composition, comprising (A) at least one type of inorganic particles which are dispersed in the liquid medium (C), (B) at least one type of polymer particles which are dispersed in the liquid medium (C), (C) a liquid medium, wherein the zeta-potential of the inorganic particles (A) in the liquid medium (C) and the zeta-potential of the polymer particles in the liquid medium (C) are of same signs. No Figure

公开(公告)号：SG188460A1

公开(公告)日：2013-04-30

申请号：SG2013017264

申请日：2011-09-06

Applicant: BASF SE

Inventor： LI YUZHUO ,  CHU JEA-JU ,  VENKATARAMAN SHYAM SUNDAR ,  USMAN IBRAHIM SHEIK ANSAR ,  PINDER HARVEY WAYNE

Abstract: An aqueous polishing composition comprising (A) abrasive particles which are positively charged when dispersed in an aqueous medium having a pH in the range of from 3 to 9 as evidenced by the electrophoretic mobility; (B) water-soluble and water-dispersible hydroxy group containing components selected from (b1 ) aliphatic and cycloaliphatic hydroxycarboxylic acids, wherein the molar ratio of hydroxy groups to carboxylic acid groups is at least 1; (b2) esters and lactones of the hydroxycarboxylic acids (b1 ) having at least one hydroxy group; and (b3) mixtures thereof; and (C) water-soluble and water-dispersible polymer components selected from (c1 ) linear and branched alkylene oxide polymers; (c2) linear and branched, aliphatic and cycloaliphatic poly(N-vinylamide) polymers; and (c3) cationic polymeric flocculants having a weight average molecular weight of less than 100,000 Dalton.; and a process for polishing substrate materials for electrical, mechanical and optical devices.

公开(公告)号：SG188459A1

公开(公告)日：2013-04-30

申请号：SG2013017256

申请日：2011-09-06

Applicant: BASF SE

Inventor： NOLLER BASTIAN ,  FRANZ DIANA ,  LI YUZHUO ,  USMAN IBRAHIM SHEIK ANSAR ,  PINDER HARVEY WAYNE ,  VENKATARAMAN SHYAM SUNDAR

Abstract: An aqueous polishing composition comprising (A) at least one water-soluble or water-dispersible compound selected from the group consisting of N-substituted diazenium dioxides and N'-hydroxy-diazenium oxide salts; and (B) at least one type of abrasive particles; the use of the compounds (A) for manufacturing electrical, mechanical and optical devices and a process for polishing substrate materials for electrical, mechanical and optical devices making use of the aqueous polishing composition.

公开(公告)号：SG188206A1

公开(公告)日：2013-04-30

申请号：SG2013010632

申请日：2011-09-06

Applicant: BASF SE

Inventor： LI YUZHUO ,  CHU JEA-JU ,  VENKATARAMAN SHYAM SUNDAR ,  USMAN IBRAHIM SHEIK ANSAR ,  PINDER HARVEY WAYNE

Abstract: An aqueous polishing composition having a pH of 3 to 11 and comprising (A) abrasive particles which are positively charged when dispersed in an aqueous medium free from component (B) and of a pH of 3 to 9 as evidenced by the electrophoretic mobility; (B) anionic phosphate dispersing agents; and (C) a polyhydric alcohol component selected from the group consisting of (c1) water-soluble and water-dispersible, aliphatic and cycloaliphatic, monomeric, dimeric and oligomeric polyols having at least 4 hydroxy groups; (c2) a mixture consisting of (c21) water-soluble and water-dispersible, aliphatic and cycloaliphatic polyols having at least 2 hydroxy groups; and (c22) water-soluble or water-dispersible polymers selected from linear and branched alkylene oxide homopolymers and copolymers (c221 ); and linear and branched, aliphatic and cycloaliphatic poly(N-vinylamide) homopolymers and copolymers (c222); and (c3) mixtures of (c1) and (c2); and a process for polishing substrates for electrical, mechanical and optical devices.

公开(公告)号：EP2539416A4

公开(公告)日：2017-11-29

申请号：EP11746938

申请日：2011-01-19

Applicant: BASF SE

Inventor： KUJAT CHRISTOF ,  LI YUZHUO ,  RUSHING KENNETH

IPC: C09K3/14

CPC classification number: C09K3/1436 ,  B24B37/245 ,  B24D11/001 ,  H01L21/3212

Abstract: Abrasive articles containing solid abrasive particles (A) selected from the group consisting of inorganic particles, organic particles and inorganic-organic hybrid particles (a1) having an average primary particle size of from 1 to 500 nm as determined by laser light diffraction and having electron donor groups (a2) chemically bonded to their surface are provided. The said solid abrasive particles (A) are distributed throughout or on top of or throughout and on top of a solid matrix (B). A method for manufacturing abrasive articles and a method for processing substrates useful for fabricating electrical and optical devices are provided. The said methods make use of the said abrasive articles.

公开(公告)号：EP2852644A4

公开(公告)日：2016-04-06

申请号：EP13794728

申请日：2013-05-21

Applicant: BASF SE

Inventor： NOLLER BASTIAN MARTEN ,  GILLOT CHRISTOPHE ,  FRANZ DIANA ,  LI YUZHUO

IPC: H01L21/306 ,  C09G1/02

CPC classification number: C09G1/02 ,  B81C2201/0121 ,  B81C2201/0123 ,  B81C2201/0126 ,  H01L21/02024 ,  H01L21/302 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/3212 ,  H01L21/461

公开(公告)号：EP2794790A4

公开(公告)日：2015-07-29

申请号：EP11878201

申请日：2011-12-21

Applicant: BASF SE

Inventor： RAMAN VIJAY IMMANUEL ,  LI YUZHUO ,  SCHADE CHRISTIAN ,  VENKATARAMAN SHYAM SUNDAR ,  SU EASON YU-SHEN ,  USMAN IBRAHIM SHEIK ANSAR ,  GAO NING

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3105

CPC classification number: C09G1/04 ,  C09G1/00 ,  C09G1/02 ,  C09K3/1463 ,  C09K13/00 ,  H01L21/302 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/461

Abstract: A chemical mechanical polishing (CMP) composition comprising: (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of an organic polymeric compound as a dispersing agent or charge reversal agent comprising a phosphonate (P(═O)(OR1)(OR2) or phosphonic acid (P(═O)(OH)2) moiety or their deprotonated forms as pendant groups, wherein R1 is alkyl, aryl, alkylaryl, or arylalkyl, R2 is H, alkyl, aryl, alkylaryl, or arylalkyl, and (C) an aqueous medium.

Abstract translation: 一种化学机械抛光（CMP）组合物，其包含：（A）无机颗粒，有机颗粒或其混合物或复合物，（B）至少一种作为分散剂的有机聚合物或电荷反转剂，其包含膦酸盐 P（ΟO）（OR1）（OR2）或膦酸（P（ΟO）（OH）2）部分或其去质子化形式为侧基，其中R 1为烷基，芳基，烷基芳基或芳基烷基， 烷基，芳基，烷基芳基或芳烷基，和（C）水性介质。

公开(公告)号：EP2539412A4

公开(公告)日：2013-07-31

申请号：EP11746939

申请日：2011-01-19

Applicant: BASF SE

Inventor： RAMAN VIJAY IMMANUEL ,  GUBAYDULLIN ILSHAT ,  BRANDS MARIO ,  LI YUZHUO ,  PERETOLCHIN MAXIM

IPC: C09G1/02 ,  C08F271/02 ,  C09K3/14

CPC classification number: C09G1/02 ,  C08F283/00 ,  C09K3/1463 ,  C08F220/32

公开(公告)号：EP2812422A4

公开(公告)日：2016-10-19

申请号：EP13746032

申请日：2013-01-24

Applicant: BASF SE ,  BASF SCHWEIZ AG

Inventor： LI YUZHUO ,  VENKATARAMAN SHYAM SUNDAR ,  ZHONG MINGJIE

IPC: C11D7/22 ,  H01L21/02

CPC classification number: C11D3/3427 ,  C11D3/2065 ,  C11D3/2082 ,  C11D3/2086 ,  C11D3/349 ,  C11D3/3757 ,  C11D7/261 ,  C11D7/268 ,  C11D7/34 ,  C11D11/0047 ,  C11D11/0064 ,  H01L21/02074

Abstract: A post chemical-mechanical-polishing (post-CMP) cleaning composition comprising: (A) is cysteine, glutathione, N-acetylcysteine, thiourea, (L) at least one oligomeric or polymeric polycarboxylic acid, and (C) water, wherein the post-CMP cleaning composition has a pH-value in the range of from 4 to not more than 7. The use of the composition for removing residues and contaminants from the surface of semiconductor substrates useful for manufacturing microelectronic devices. A process for manufacturing microelectronic devices from semiconductor substrates comprising the step of removing residues and contaminants from the surface of the semiconductor substrates by contacting them at least once with the post-CMP cleaning composition.