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265 records (took 0.021 seconds)

    31.
    发明专利
    未知

    公开(公告)号：DE69033499T2

    公开(公告)日：2000-08-24

    申请号：DE69033499

    申请日：1990-09-28

    Applicant: CANON KK

    Inventor： OZAWA KUNITAKA ,  UZAWA SHUNICHI ,  OHTA HIROSHI ,  MORI MAKIKO ,  NOSE NORIYUKI

    IPC: G03F7/20 ,  G03F9/00 ,  G05D3/12 ,  H01L21/027 ,  H01L21/30

    Abstract: An alignment method for use in an exposure apparatus for printing a pattern of an original (2) onto different surface areas of a substrate (3), the alignment method comprising the steps of: providing alignment marks around the pattern of the original and placing the original on an original supporting stage (4); providing a reference mark (14) on an X-Y stage (24) for supporting the substrate and being movable in X and Y directions, and moving the X-Y stage so as to place the reference mark at those positions, in sequence, which correspond to the alignment marks of the original, respectively, and which are preset in respect to a stage coordinate system; detecting, in sequence, positional errors of the alignment marks of the original with respect to the corresponding set positions, respectively, by using the reference mark and through the movement of the X-Y stage, wherein the positional errors are detected by use of positional error detectors (12) which are provided to be associated with the alignment marks of the original, respectively; calculating a rotational error of the original with respect to the stage coordinate system, in theta direction, by using the positional errors; and rotationally moving the original supporting table in the theta direction so as to correct the rotational error.

    35.
    发明专利
    未知

    公开(公告)号：DE69029300T2

    公开(公告)日：1997-04-10

    申请号：DE69029300

    申请日：1990-08-30

    Applicant: CANON KK

    Inventor： WATANABE YUTAKA ,  UNO SHINICHIRO ,  EBINUMA RYUICHI ,  MIZUSAWA NOBUTOSHI ,  UZAWA SHUNICHI

    IPC: G21K5/02 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30

    Abstract: An exposure apparatus for exposing a substrate with X-rays, is disclosed. The apparatus includes a radiation source (1) for providing X-rays; and a convex mirror (2) for reflecting the X-rays from the radiation source toward the substrate to expose a zone (3) of the substrate with the X-rays; wherein the convex mirror and the substrate are so interrelated that a peak position of intensity distribution of the X-rays upon the zone is deviated from the center of the zone.

    36.
    发明专利
    未知

    公开(公告)号：DE68927430T2

    公开(公告)日：1997-03-13

    申请号：DE68927430

    申请日：1989-08-31

    Applicant: CANON KK

    Inventor： KUROSAWA HIROSHI ,  AMEMIYA MITSUAKI ,  TERASHIMA SHIGERU ,  UDA KOJI ,  SHIMODA ISAMU ,  UZAWA SHUNICHI ,  OZAWA KUNITAKA ,  MORI MAKIKO ,  EBINUMA RYUICHI ,  HARA SHINICHI ,  MIZUSAWA NOBUTOSHI ,  KAWAKAMI EIGO

    IPC: G03F7/20

    Abstract: An exposure apparatus usable with synchrotron radiation source (201) wherein the synchrotron radiation (202,204) is generated by electron injection (210) into a ring (201). The exposure apparatus is to transfer a semiconductor element pattern of a mask (208) onto a semiconductor wafer (209) by the synchrotron radiation. The apparatus includes a shutter (207) for controlling the exposure of the wafer (209). The shutter (207) controls the exposure with the illuminance distribution on the wafer surface taken into account. The illuminance distribution is determined (206,211,216) in response to the electron injection (210), and thereafter, the illuminance distribution is corrected (216,215,213,207) in a predetermined manner. By this, the illuminance distribution data for controlling (213,215) the shutter (207) always correspond to the actual illuminance distribution. The entire shot areas of the semiconductor wafer (209) are exposed with high precision.

    37.
    发明专利
    未知

    公开(公告)号：DE69123610D1

    公开(公告)日：1997-01-30

    申请号：DE69123610

    申请日：1991-01-31

    Applicant: CANON KK

    Inventor： SHIMODA ISAMU ,  KARIYA TAKAO ,  MIZUSAWA NOBUTOSHI ,  OZAWA KUNITAKA ,  UZAWA SHUNICHI

    IPC: G03F7/20

    Abstract: A method of manufacture of semiconductor devices, includes exposing different portions of a semiconductor substrate (2) with a first exposure apparatus (100) having a first exposure range; placing and aligning the semiconductor substrate with respect to a second exposure range of a second exposure apparatus (200) which range is larger than the first exposure range of the first exposure apparatus; detecting an alignment error of each of the portions of the semiconductor substrate as covered by the second exposure range of the second exposure apparatus; calculating an overall alignment error of those portions of the semiconductor substrate with respect to the whole second exposure range of the second exposure apparatus, on the basis of the detected alignment errors; and controlling the exposure operation of the second exposure apparatus on the basis of the calculated overall alignment error.

    38.
    发明专利
    未知

    公开(公告)号：DE68927364D1

    公开(公告)日：1996-11-28

    申请号：DE68927364

    申请日：1989-08-31

    Applicant: CANON KK

    Inventor： SAKAMOTO EIJI ,  HARA SHINICHI ,  SHIMODA ISAMU ,  UZAWA SHUNICHI

    IPC: G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  H01L21/683 ,  H01L21/00

    Abstract: A wafer chuck (2) usable with a semiconductor exposure apparatus (Fig.2A) wherein a mask and a semiconductor wafer (1) are placed in a vacuum ambience or a pressure-reduced gas ambience, and wherein the wafer (1) is exposed through the mask to radiation energy such as X-rays contained in a synchrotron radiation beam, by which the pattern of the mask is transferred onto the wafer (1). The wafer (1) is first attracted on the wafer supporting surface of the chuck (2) by vacuum attraction (21), and thereafter, the wafer (1) is attracted by electrostatic attraction force. Thereafter, the vacuum attraction is broken by supplying (24) a gas. Preferably Helium or other thermally conductive gas is admitted at this point. When the pattern of the mask is transferred onto the wafer (1), the wafer (1) is retained on the wafer supporting surface (20) by the electrostatic attraction force only. By this, the wafer supporting apparatus can correctly contact the wafer supporting surface (20) to the wafer (1) without being influenced by the undulation of the wafer (1). In addition, the heat produced in the wafer (1) during exposure can be removed efficiently by temperature controlled (23) water (11) supplied to the wafer supporting apparatus (2).

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