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    OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF
    31.
    发明申请
    OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF 有权
    光电器件及其制造方法

    公开(公告)号：US20160284939A1

    公开(公告)日：2016-09-29

    申请号：US15176890

    申请日：2016-06-08

    Applicant: EPISTAR CORPORATION

    Inventor： Chun-Yu Lin ,  Yi-Ming Chen ,  Shih-Chang Lee ,  Yao-Ning Chan ,  Tzu-Chieh Hsu

    IPC: H01L33/38 ,  H01L33/22 ,  H01L33/30

    CPC classification number: H01L33/387 ,  H01L33/06 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025

    Abstract: An optoelectronic device is provided. The optoelectronic device comprises: an optoelectronic system for emitting light; multiple contact regions on the optoelectronic system and separated from one another; and multiple fingers on the optoelectronic system and opposite to the multiple contact regions; wherein a first contact region in the multiple contact regions is between two adjacent fingers, and a first distance between the first contact region and one of the adjacent fingers is between 5% and 50% of a second distance between the two adjacent fingers.

    Abstract translation: 提供了一种光电器件。 光电子器件包括：用于发光的光电子系统; 光电子系统上的多个接触区域并且彼此分离; 和多个手指在光电子系统上并且与多个接触区域相对; 其中所述多个接触区域中的第一接触区域位于两个相邻的指状物之间，并且所述第一接触区域和所述相邻指状物之一之间的第一距离在所述两个相邻指状物之间的第二距离的5％至50％之间。

    LIGHT-EMITTING DIODE
    32.
    发明申请
    LIGHT-EMITTING DIODE 有权
    发光二极管

    公开(公告)号：US20160240731A1

    公开(公告)日：2016-08-18

    申请号：US14625156

    申请日：2015-02-18

    Applicant: EPISTAR CORPORATION

    Inventor： Yu-Ren Peng ,  Tzu-Chieh Hsu ,  Shih-I Chen ,  Rong-Ren Lee ,  Hsin-Chan Chung ,  Wen-Luh Liao ,  Yi-Chieh Lin

    IPC: H01L33/10 ,  H01L33/42 ,  H01L33/12

    CPC classification number: H01L33/105 ,  H01L33/10 ,  H01L33/12 ,  H01L33/30 ,  H01L33/38 ,  H01L33/42 ,  H01L33/46

    Abstract: A light-emitting diode, comprises an active layer for emitting a light with a phase and a peak wavelength λ in air, a reflector, a lower semiconductor stack between the active layer and the reflector, wherein the lower semiconductor stack comprises multiple semiconductor layers, and each of the multiple semiconductor layers has a refractive index ni, a thickness di and two sides each contacting adjacent layers to form two interfaces, wherein each interface has a phase shift when the light passes through the interface.

    Abstract translation: 发光二极管包括用于在空气中发射具有相位和峰值波长λ的光的有源层，反射器，有源层和反射器之间的下半导体叠层，其中下半导体堆叠包括多个半导体层， 并且多个半导体层中的每一个具有折射率ni，厚度di和两侧各自接触相邻层以形成两个界面，其中每个界面在光通过界面时具有相移。

    Method of manufacturing semiconductor optoelectronic device
    33.
    发明授权
    Method of manufacturing semiconductor optoelectronic device 有权
    制造半导体光电器件的方法

    公开(公告)号：US09293634B2

    公开(公告)日：2016-03-22

    申请号：US14328020

    申请日：2014-07-10

    Applicant: Epistar Corporation

    Inventor： Hsin-Ying Wang ,  Yi-Ming Chen ,  Tzu-Chieh Hsu ,  Chi-Hsing Chen ,  Hsiang-Ling Chang

    IPC: H01L27/00 ,  H01L31/18 ,  H01L33/00 ,  H01L33/42 ,  H01L27/15 ,  H01L27/146

    CPC classification number: H01L31/18 ,  H01L27/14636 ,  H01L27/156 ,  H01L33/005 ,  H01L33/0079 ,  H01L33/42

    Abstract: A semiconductor optoelectronic device comprises an operating substrate; a semiconductor epitaxial stack unit disposed on the operating substrate comprising a first semiconductor material layer having a first electrical conductivity disposed on the operating substrate and a second semiconductor material layer having a second electrical conductivity disposed on the first semiconductor material layer; a transparent conductive layer disposed on the second semiconductor material layer, wherein the transparent conductive layer comprises a first surface, a directly contacting part disposed on the first surface and directly contacting with the second semiconductor material layer, a second surface substantially parallel with the first surface, and a directly contacting corresponding part disposed on the second surface corresponding to the directly contacting part; and a first electrode disposed on the operating substrate and electrically connected with the semiconductor epitaxial stack by the transparent conductive layer, wherein the first electrode is connected with the transparent conductive layer by an area excluding the directly contacting part and the directly contacting corresponding part.

    Abstract translation: 半导体光电子器件包括操作衬底; 设置在所述操作基板上的半导体外延堆叠单元，包括设置在所述操作基板上的具有第一导电性的第一半导体材料层和设置在所述第一半导体材料层上的具有第二导电性的第二半导体材料层; 设置在所述第二半导体材料层上的透明导电层，其中所述透明导电层包括第一表面，设置在所述第一表面上并与所述第二半导体材料层直接接触的直接接触部分，所述第二表面基本上平行于所述第一表面 以及设置在与直接接触部分相对应的第二表面上的直接接触的对应部件; 以及第一电极，其设置在所述操作基板上并且通过所述透明导电层与所述半导体外延层电连接，其中所述第一电极通过除了直接接触部分和直接接触的对应部分之外的区域与所述透明导电层连接。

    Optoelectronic device and the manufacturing method thereof
    35.
    发明授权
    Optoelectronic device and the manufacturing method thereof 有权
    光电子器件及其制造方法

    公开(公告)号：US09006774B2

    公开(公告)日：2015-04-14

    申请号：US13932661

    申请日：2013-07-01

    Applicant: Epistar Corporation

    Inventor： Shih-I Chen ,  Chia-Liang Hsu ,  Tzu-Chieh Hsu ,  Chien-Fu Huang ,  Ching-Pei Lin

    IPC: H01L33/00 ,  H01L33/46 ,  H01L33/40 ,  H01L33/22 ,  H01L33/42 ,  H01L33/44 ,  H01L33/38

    CPC classification number: H01L33/46 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44

    Abstract: An optoelectronic device comprising a substrate; a first window layer on the substrate, having a first sheet resistance, a first thickness, and a first impurity concentration; a second window layer having a second sheet resistance, a second thickness, and a second impurity concentration; and a semiconductor system between the first window layer and the second window layer; wherein the second window layer comprises a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance.

    Abstract translation: 一种包括衬底的光电器件; 在所述基板上的第一窗口层，具有第一薄层电阻，第一厚度和第一杂质浓度; 具有第二薄层电阻，第二厚度和第二杂质浓度的第二窗口层; 以及在所述第一窗口层和所述第二窗口层之间的半导体系统; 其中所述第二窗口层包括不同于所述半导体系统的半导体材料，并且所述第二薄层电阻大于所述第一薄层电阻。

    LIGHT EMITTING DEVICE
    36.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20140264411A1

    公开(公告)日：2014-09-18

    申请号：US14050707

    申请日：2013-10-10

    Applicant: Epistar Corporation

    Inventor： Chun-Yu Lin ,  Tzu-Chieh Hsu ,  Fu-Chun Tsai ,  Yi-Wen Huang ,  Chih-Chiang Lu

    IPC: H01L33/02 ,  H01L33/60

    CPC classification number: H01L33/44 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/60

    Abstract: This disclosure discloses a light-emitting chip comprises: a light-emitting stack, having a side wall, comprising an active layer emitting light; and a light-absorbing layer having a first portion surrounding the side wall and being configured to absorb 50% light toward the light-absorbing layer.

    Abstract translation: 本公开公开了一种发光芯片，包括：具有侧壁的发光叠层，包括发射光的有源层; 以及光吸收层，其具有围绕所述侧壁的第一部分，并且被配置为朝向所述光吸收层吸收50％的光。

    Light-emitting device
    40.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US10511140B2

    公开(公告)日：2019-12-17

    申请号：US16106458

    申请日：2018-08-21

    Applicant: EPISTAR CORPORATION

    Inventor： Tzu-Chieh Hsu ,  Yi-Wen Huang ,  Yi-Hung Lin ,  Chih-Chiang Lu

    IPC: H01S5/187 ,  H01S5/042 ,  H01S5/183 ,  H01S5/22 ,  H01S5/343 ,  H01S5/022 ,  H01S5/026 ,  H01S5/028 ,  H01S5/42

    Abstract: A light-emitting device is provided. The light-emitting device comprises: a substrate; and multiple radiation emitting regions arranged on the substrate, and comprising: a first radiation emitting region capable of emitting coherent light and emits a coherent light when driven by a first current; a second radiation emitting region capable of emitting coherent light and emits an incoherent light when driven by the first current, wherein each of the first radiation emitting region and the second emitting region comprises epitaxial structure comprising a first DBR stack, a light-emitting structure, and a second DBR stack.

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