Abstract:
An environmental cell for a charged particle beam system allows relative motion between the cell mounted on an X-Y stage and the optical axis of the focusing column, thereby eliminating the need for a sub-stage within the cell. A flexible cell configuration, such as a retractable lid, permits a variety of processes, including beam-induced and thermally-induced processes. Photon yield spectroscopy performed in a charged particle beam system and using gas cascade amplification of the photoelectrons allows analysis of material in the cell and monitoring of processing in the cell. Luminescence analysis can be also performed using a retractable mirror.
Abstract:
A charge transfer mechanism is used to locally deposit or remove material for a small structure. A local electrochemical cell is created without having to immerse the entire work piece in a bath. The charge transfer mechanism can be used together with a charged particle beam or laser system to modify small structures, such as integrated circuits or micro-electromechanical system. The charge transfer process can be performed in air or, in some embodiments, in a vacuum chamber.
Abstract:
Electron-beam-induced chemical reactions with precursor gases are controlled by adsorbate depletion control. Adsorbate depletion can be controlled by controlling the beam current, preferably by rapidly blanking the beam, and by cooling the substrate (54). The beam (12,13) preferably has a low energy to reduce the interaction volume. By controlling the depletion and the interaction volume, a user has the ability to produce precise shapes.
Abstract:
A method for fabrication of microscopic structures that uses a beam process, such as beam-induced decomposition of a precursor, to deposit a mask in a precise pattern and then a selective, plasma beam is applied, comprising the steps of first creating a protective mask upon surface portions of a substrate using a beam process such as an electron beam, focused ion beam (FIB), or laser process, and secondly etching unmasked substrate portions using a selective plasma beam etch process. Optionally, a third step comprising the removal of the protective mask may be performed with a second, materially oppositely selective plasma beam process.