High resolution plasma etch
    37.
    发明公开
    High resolution plasma etch 审中-公开
    高分辨率等离子

    公开(公告)号:EP2006249A3

    公开(公告)日:2010-06-16

    申请号:EP08158646.3

    申请日:2008-06-20

    Applicant: FEI COMPANY

    Abstract: A method for fabrication of microscopic structures that uses a beam process, such as beam-induced decomposition of a precursor, to deposit a mask in a precise pattern and then a selective, plasma beam is applied, comprising the steps of first creating a protective mask upon surface portions of a substrate using a beam process such as an electron beam, focused ion beam (FIB), or laser process, and secondly etching unmasked substrate portions using a selective plasma beam etch process. Optionally, a third step comprising the removal of the protective mask may be performed with a second, materially oppositely selective plasma beam process.

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