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公开(公告)号：CA1100395A
公开(公告)日：1981-05-05
申请号：CA321797
申请日：1979-02-19
Applicant: IBM
Inventor： BERKENBLIT MELVIN , GREEN DENNIS C , KAUFMAN FRANK B , REISMAN ARNOLD
IPC: C23F1/10 , H01L21/306 , H01L21/308 , C03C15/00 , C09K13/00
Abstract: METHOD OF CONTROLLING SILICON WAFER ETCHING RATES A method for controlling the etch rate of a quaternary etchant comprising ethylene diamine, water, pyrocatechol and a diazine. The etching rate is catalyzed and controlled by controlling the amount of the diazine present in the etchant. A method for the controlled etching of silicon is also disclosed. Y0977-055
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公开(公告)号：CA1051507A
公开(公告)日：1979-03-27
申请号：CA255965
申请日：1976-06-29
Applicant: IBM
Inventor： BERKENBLIT MELVIN , LUSSOW ROBERT O , PARK KYU C , REISMAN ARNOLD
Abstract: GAS DISCHARGE DISPLAY PANEL FABRICATION An in situ process is disclosed for fabricating gas discharge display panels in a sequential seal, bake-out and backfill mode of operation. The single thermal cycle process involves placing unassembled panel parts in a controlled gas ambient furnace system with required seal frame, evacuating said furnace and backfilling with an appropriate ambient atmosphere to an appropriate pressure while heating the furnace. During the heating, the furnace is repeatedly evacuated to moderate vacuum and refilled to some predetermined pressure. The furnace is heated to just above the glass transition temperature of the seal frame in this evacuate-refill mode, then held for some time to achieve outgassing of both panel parts and furnace chamber. Thereafter, the furnace chamber is refilled to one atmosphere and further heated to complete the sealing of the panel. The panel is then cooled to approximately 300.degree.C, still under one atmosphere, after which the evacuate-refill cycle is continuously repeated as the temperature is lowered down to the temperature of tip-off using the refill gas for the pressurization. The panel is refilled to an appropriate pressure at elevated temperature such that at room temperature the pressure is the desired pressure and the panel is tipped off. The process of successive evacuations and backfillings at the appropriate portions of the cycle are highly desirable for cleaning of the panel parts via contaminant dilution.
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公开(公告)号：DE2826329A1
公开(公告)日：1979-01-11
申请号：DE2826329
申请日：1978-06-16
Applicant: IBM
Inventor： BERKENBLIT MELVIN , CHAN SEE ARK , REISMAN ARNOLD , ZIRINSKY STANLEY
IPC: B05B1/00 , B41J2/135 , C04B41/53 , C04B41/91 , C23F1/00 , G01F1/42 , H01L21/308 , H03H7/06 , B44C1/22 , C23F1/02
Abstract: A method for etching at least one aperture having a defined crystallographic geometry in single crystals which includes masking the crystal to protect predetermined portions thereof from being etched, and then anisotropically etching with a mixture of sulfuric acid and phosphoric acid.
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公开(公告)号：CA1016193A
公开(公告)日：1977-08-23
申请号：CA195120
申请日：1974-03-15
Applicant: IBM
Inventor： BERKENBLIT MELVIN , LUSSOW ROBERT O , REISMAN ARNOLD
Abstract: A process for the in situ fabrication of a glass from an admixed frit, for example, of two starting glasses on the required existing substrate structure therefore. The admixed frit comprises a low glass transition temperature glass and a higher glass transition temperature glass, which glasses are uniquely capable of forming a continuous vitreous phase over their entire compositional range. During thermal cycling, the low glass transition temperature glass flows out and solubilizes the higher glass transition temperature glass to thereby synthesize in situ a new glass. The temperature required to form the glass by the in situ process is less than that required where a glass of identical composition is first preequilibrated externally and then applied in frit form to the existing substrate structure and flowed out thereon. The in situ synthesized new glass softens and flows at a temperature higher than that of the low glass transistion temperature glass and lower than that of the higher glass transition temperature glass, and exhibits a glass transition temperature intermediate to the two starting glasses.
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公开(公告)号：DE2628819A1
公开(公告)日：1977-01-27
申请号：DE2628819
申请日：1976-06-26
Applicant: IBM
Inventor： BERKENBLIT MELVIN , LUSSOW ROBERT O , PARK KYU CHANG , REISMAN ARNOLD
Abstract: An in situ process is disclosed for fabricating gas discharge display panels in a sequential seal, bake-out and backfill mode of operation. The single thermal cycle process involves placing unassembled panel parts in a controlled gas ambient furnace system with required seal frame, evacuating said furnace and backfilling with an appropriate ambient atmosphere to an appropriate pressure while heating the furnace. During the heating, the furnace is repeatedly evacuated to moderate vacuum and refilled to some predetermined pressure. The furnace is heated to just above the glass transition temperature of the seal frame in this evacuate-refill mode, then held for some time to achieve outgassing of both panel parts and furnace chamber. Thereafter, the furnace chamber is refilled to one atmosphere and further heated to complete the sealing of the panel. The panel is then cooled to approximately 300 DEG C, still under one atmosphere, after which the evacuate-refill cycle is continuously repeated as the temperature is lowered down to the temperature of tip-off using the refill gas for the pressurization. The panel is refilled to an appropriate pressure at elevated temperature such that at room temperature the pressure is the desired pressure and the panel is tipped off. The process of successive evacuations and backfillings at the appropriate portions of the cycle are highly desirable for cleaning of the panel parts via contaminant dilution.
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Patent Agency Ranking
公开(公告)号：DE2602263A1
公开(公告)日：1976-07-29
申请号：DE2602263
申请日：1976-01-22
Applicant: IBM
Inventor： BASSOUS ERNEST , KUHN LAWRENCE , REISMAN ARNOLD , TAUB HOWARD H
Abstract: In an ink jet printing system, a single nozzle or an array of nozzles are etched in a semiconductor material such as silicon. Each nozzle has polygonal or N-sided entrance and exit apertures of different cross-sectional area. Preferably, the nozzle is in the shape of a truncated pyramid with the entrance and exit apertures being substantially square in cross-section. The corners of the apertures and wall interfaces may be rounded to reduce stress concentrations.
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公开(公告)号：DE1519812B1
公开(公告)日：1971-04-01
申请号：DE1519812
申请日：1965-08-17
Applicant: IBM
Inventor： REISMAN ARNOLD , BERKENBLIT MELVIN , ALYANAKYAN SATENIK ALIN
Abstract: Semi-conductor material, particularly Ge, is epitaxially deposited on a substrate by reacting the material with a hydrogen-inert gas-halide mixture to produce compounds thereof in the vapour phase and perturbing the equilibrium of this vapour phase by introducing a perturbing gas, such as hydrogen or a mixture of hydrogen and an inert gas, to produce the required deposition. As shown, Ge source material is packed within a tube 11 placed in a furnace 14 kept at 500-900 DEG C. (preferably 600 DEG C.). A mixture of HI and He is passed through the tube 11 to produce a vaporous mixture containing GeI2 which passes out through a nozzle 16 into a deposition chamber 17 held at 350 DEG C. H2, with or without He, is passed into the deposition chamber through a coaxial nozzle 18 to perturb the equilibrium and cause epitaxial deposition on a Ge substrate in a quartz boat 26.
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公开(公告)号：DE1949871A1
公开(公告)日：1970-04-09
申请号：DE1949871
申请日：1969-10-02
Applicant: IBM
Inventor： BERKENBLIT MELVIN , REISMAN ARNOLD , BURWELL LIGHT THOMAS
IPC: C30B25/02 , H01L21/00 , H01L21/205 , H01L7/36
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公开(公告)号：DE1282613B
公开(公告)日：1968-11-14
申请号：DEJ0027224
申请日：1964-12-24
Applicant: IBM
Inventor： REISMAN ARNOLD
Abstract: A process for epitaxially depositing germanium on a substrate comprises:- 1) passing a mixture of hydrogen or helium and a germanium halide, halogen or halogen acid into a first reactor containing Ge, and 2) passing the product of the first stage, mixed with hydrogen, into a second reaction chamber containing a germanium substrate. The reactor in step 1 is preferably packed with a bed of germanium at a temperature of 290 DEG - 450 DEG C. and the substrate in step 2 is preferably maintained at 500-920 DEG C. Gaseous doping agents may also be included in the feed mixture to give various kinds of semi-conductor structures.ALSO:A process for epitaxially depositing silicon on a substrate comprises: (1) passing a mixture of hydrogen or helium with a silicon halide, a halogen or a halogen acid into a first reaction chamber containing silicon (preferably a packed bed thereof at 700-980 DEG C.), and (2) passing the product of step 1 mixed with hydrogen into a second reaction chamber containing a silicon substrate (preferably at 1050-1250 DEG C.). Gaseous doping agents may be included in the feed mixture to give various kinds of semiconductor structures.
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公开(公告)号：DE1277199B
公开(公告)日：1968-09-12
申请号：DEJ0023163
申请日：1963-02-12
Applicant: IBM
Inventor： CHEROFF GEORGE , HOCHBERG FREDERICK , REISMAN ARNOLD , TRIEBWASSER SOL
IPC: B22F3/10 , C04B35/547 , C04B35/64 , H01L21/00
Abstract: In a sintering process, the vapour pressure of the flux used is maintained substantially constant so that the flux concentration does not decrease during the process and affect the sintering. Preferred materials are photo-conductors such as CdSe and CdS or a solid solution of both using CdCr2, CdBr2 or CdI2 as fluxes. Numerous examples are given utilizing these materials, the sintering treatments involving heating to temperatures between 522 DEG and 600 DEG C. for 5-20 minutes in an atmosphere of 0.2 to 1.7% O and the rest N and the mixtures having between 5 and 20 mol. per cent flux; grain sizes between 4 and 15 m result. Copper may be added as an impurity. The vapour pressure is maintained either by using a small volume container or by providing an auxiliary source for vapour consisting merely of the flux material or alternatively using a second supply of the mixture which is being sintered. This auxiliary source may be covered with a layer of Al2O3 which acts as a molecular sieve to govern the rate of evaporation. Fig. 3 shows a suitable small volume inner container 10 which is closed by a substrate 11 carrying on its inner surface the material to be sintered. The container is carried on an endless chain 6 in the heating apparatus shown in Fig. 2 which comprises a glove box 1 and furnace 12. Means are provided for circulating and controlling the atmosphere. When only small quantities of flux are used which are insufficient to fill the container with vapour without affecting the residue, secondary sources of flux vapour are provided in the bottom of the container 10.
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