公开(公告)号：DE102004040077A1

公开(公告)日：2005-12-22

申请号：DE102004040077

申请日：2004-08-18

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BRICK PETER ,  ALBRECHT TONY ,  STEIN WILHELM

IPC: H01L21/00 ,  H01S3/109 ,  H01S5/02 ,  H01S5/042 ,  H01S5/14 ,  H01S5/183

Abstract: A surface-emitting semiconductor laser component, in particular an electrically pumped semiconductor laser component, featuring emission in a vertical direction. The component is provided for the generation of laser radiation by means of an external optical resonator (4, 5). The component comprises a semiconductor body with a semiconductor layer sequence (2) having a lateral main direction of extension and an active zone (3) provided for generation of radiation. A radiation-transmissive contact layer (6) is arranged within the resonator and is electrically conductively connected to the semiconductor body.

公开(公告)号：DE10313608A1

公开(公告)日：2004-10-14

申请号：DE10313608

申请日：2003-03-26

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STEEGMUELLER ULRICH ,  ALBRECHT TONY ,  BRICK PETER

IPC: H01S5/00 ,  H01S5/02 ,  H01S5/026 ,  H01S5/04 ,  H01S5/14 ,  H01S5/20 ,  H01S5/40 ,  H01S5/42

Abstract: The array comprises surface-emitting semiconductor lasers (1) arranged in a plane, with an external resonator. Each pumping laser (2) emits a beam directed laterally, for optical pumping of the surface-emitting semiconductor lasers. Each beam is directed parallel to the common plane.

公开(公告)号：DE10261675A1

公开(公告)日：2004-07-22

申请号：DE10261675

申请日：2002-12-31

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STEIN WILHELM ,  WIRTH RALPH ,  ALBRECHT TONY

IPC: H01L33/44 ,  H01L33/00

Abstract: An optoelectronic structural element has an epitaxial semiconductor layer sequence (6) with an electromagnetic radiation emitting zone and at least one electrical contact region (10) with at least one radiation permeable zinc oxide (ZnO) containing electrical contact layer (ECL), connected electrically to the outer semiconductor layer (5), where the ECL contains a waterproof material (8) for protection against moisture.

公开(公告)号：DE19945128A1

公开(公告)日：2001-05-17

申请号：DE19945128

申请日：1999-09-21

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： WIPIEJEWSKI TORSTEN ,  HUBER WOLFGANG ,  ALBRECHT TONY ,  ZULL HERIBERT ,  WOLF HANS-DIETRICH ,  KRISTEN GUENTER

IPC: H01S5/028 ,  H01S5/183 ,  H01S5/22 ,  H01S5/125

Abstract: A protective layer (9) made of a hermetically sealed dielectric, especially Si3N4 is applied to the whole region of the Bragg reflector layer sequence (4). Vertical resonance laser diode comprises an active layer sequence (3) for producing laser radiation between a first Bragg reflector layer sequence (2) and a second Bragg reflector layer sequence (4), each having a number of mirror pairs (22, 44). Both Bragg reflector layer sequences form a laser resonator. Both Bragg reflector layer sequences and the active layer sequences are arranged between a first and a second electrical contact layer (7, 8).One (4) of the layer sequences is partially permeable for the laser radiation produced in the active layer sequence. The electrical contact layer has a opening (7A) for light. A protective layer (9) made of a hermetically sealed dielectric, especially Si3N4 is applied to the whole region of the Bragg reflector layer sequence (4). Preferred Features: The protective layer covers the edge region of the opening formed by the electrical contact layer. The protective layer is applied by plasma-supported chemical gas phase deposition or radio frequency sputtering.

公开(公告)号：DE112014000774A5

公开(公告)日：2015-10-22

申请号：DE112014000774

申请日：2014-02-05

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： SCHLERETH THOMAS ,  KIRSCH MARKUS ,  GÄRTNER CHRISTIAN ,  ALBRECHT TONY

IPC: H01L27/15 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62

公开(公告)号：DE102011104515A1

公开(公告)日：2012-12-20

申请号：DE102011104515

申请日：2011-06-17

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： REUFER MARTIN ,  ALBRECHT TONY ,  MAUTE MARKUS

IPC: H01L33/44 ,  H01L21/782 ,  H01L33/32

Abstract: Es wird ein Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Halbleiterchips angegeben, das zumindest die folgenden Verfahrensschritte umfasst: – Bereitstellen zumindest eines Halbleiterkörpers (1); – Einbringen von zumindest einem Graben (2) mittels zumindest eines Strukturierungsprozesses (3) in den Halbleiterkörper (1), wobei – der Graben (2) in einer vertikalen Richtung (V) die aktive Zone (12) durchbricht; – Anwendung zumindest eines Reinigungsprozesses (4) zumindest auf freiliegende Stellen des Halbleiterkörpers (1) im Bereich des Grabens (2), wobei – der Reinigungsprozess (4) zumindest einen Plasmareinigungsprozess (33) umfasst, und – der Plasmareinigungsprozess (44) eine Anzahl und/oder eine räumliche Ausdehnung von Strukturierungsrückständen (333) an freiliegenden Stellen des Halbleiterkörpers (1) zumindest im Bereich des Grabens (2) zumindest verringert; – Aufbringen zumindest einer Passivierungsschicht (5) zumindest auf freiliegende Stellen des Halbleiterkörpers (1) im Bereich des Grabens (2).

公开(公告)号：DE50115572D1

公开(公告)日：2010-09-09

申请号：DE50115572

申请日：2001-07-31

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ALBRECHT TONY

IPC: H01S5/183 ,  H01S5/042 ,  H01S5/20 ,  H01S5/22

公开(公告)号：DE102008038725A1

公开(公告)日：2010-02-18

申请号：DE102008038725

申请日：2008-08-12

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： WEIMAR ANDREAS ,  FISCHER HELMUT ,  ALBRECHT TONY ,  KASPRZAK-ZABLOCKA ANNA

IPC: H01L33/00 ,  H01L23/18

Abstract: An optoelectronic semiconductor chip is disclosed with a carrier (3), a reflecting layer (1) which contains a metal tending toward migration, wherein the reflective layer (1) is arranged on the carrier (3), a semiconductor element (2) which is arranged on the side of the reflective layer (1) facing away from the carrier (3) and the reflective layer (1) protrudes from one side surface (1a) of the reflective layer (1), and a migration barrier (4) which covers the side surface (1a) of the reflective layer (1), wherein the migration barrier (4) contains a metal.

公开(公告)号：DE102008033705A1

公开(公告)日：2009-10-08

申请号：DE102008033705

申请日：2008-07-18

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： MUSCHAWECK JULIUS ,  STREPPEL ULRICH ,  ALBRECHT TONY

IPC: G03B21/00 ,  G03B21/14 ,  H05B33/12

Abstract: The device has a luminescence diode chip (2) provided as an image providing element, and an optical element arranged downstream to the luminescence diode chip in radiation direction, where the device generates predetermined image in the operation. The optical element is formed by exterior surface of a grouting body, which surrounds the luminescence diode chip. A semiconductor body (27), an active layer and a flow conductive layer of the luminescence diode chip are structured to a pattern (11), where the predetermined image is provided as result of the projection of the pattern.

公开(公告)号：DE102007035896A1

公开(公告)日：2009-02-05

申请号：DE102007035896

申请日：2007-07-31

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ALBRECHT TONY ,  SCHMID WOLFGANG ,  SABATHIL MATTHIAS

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/62 ,  H01S5/02

Abstract: The body (100) has two carriers (1, 2), and a semiconductor layer sequence (3) between the two carriers. An active zone (4) generates electromagnetic radiation that is emitted transverse to a growth direction (7) of a semiconductor layer sequence from an edge of the body during operation of the body. The carriers are formed by a galvanic layer. The semiconductor layer sequence is based on arsenide compound semiconductor material, phosphide compound semiconductor material and nitride compound semiconductor material.