公开(公告)号：DE69932587D1

公开(公告)日：2006-09-14

申请号：DE69932587

申请日：1999-02-09

Applicant: ST MICROELECTRONICS SRL

Inventor： FERRARI PAOLO ,  VIGNA BENEDETTO ,  MONTANINI PIETRO ,  CASTOLDI LAURA ,  FERRERA MARCO

IPC: H01L27/00 ,  B81B3/00 ,  G01P1/00 ,  G01P15/08

公开(公告)号：DE69630292D1

公开(公告)日：2003-11-13

申请号：DE69630292

申请日：1996-07-31

Applicant: ST MICROELECTRONICS SRL

Inventor： VILLA FLAVIO ,  FERRARI PAOLO ,  VIGNA BENEDETTO

IPC: B81B1/00 ,  B81C1/00 ,  G01N27/12 ,  H01L21/764 ,  H01L21/00 ,  H01L21/762 ,  G01L9/00

Abstract: The chemoresistive gas sensor comprises a heating element (12) integrated in a dedicated SOI substrate (100) having an air gap (3) in the intermediate oxide layer (2) between two wafers (1, 4) of monocrystalline silicon; the sensitive element (25) of tin oxide is formed over the heating element and separated from it by a dielectric insulating and protective layer. A trench (28), formed at the end of the fabrication of the device, extends from the surface (6) of the wafer (4) in which the heating element (12) is integrated, up to the air gap (3) to mechanically separate and insulate the sensitive element (25) from the rest of the chip, and so improve the mechanical characteristics, sensitivity and response of the sensor.

公开(公告)号：DE69816713D1

公开(公告)日：2003-09-04

申请号：DE69816713

申请日：1998-05-22

Applicant: ST MICROELECTRONICS SRL

Inventor： SAX HERBERT ,  MURARI BRUNO ,  VILLA FLAVIO ,  VIGNA BENEDETTO ,  FERRARI PAOLO

IPC: G01B7/00 ,  B60R16/02 ,  G01D5/14 ,  G01V3/08 ,  H01H36/00

公开(公告)号：DE69626972D1

公开(公告)日：2003-04-30

申请号：DE69626972

申请日：1996-07-31

Applicant: ST MICROELECTRONICS SRL

Inventor： FERRARI PAOLO ,  FORONI MARIO ,  VIGNA BENEDETTO ,  VILLA FLAVIO

IPC: G01P15/02 ,  B81B3/00 ,  B81C1/00 ,  G01P15/08 ,  G01P15/125 ,  H01L29/84 ,  G01P15/00

Abstract: The acceleration sensor is formed in a monocrystalline silicon wafer (4) forming part of a dedicated SOI substrate (50) presenting a first (1) and second (4) monocrystalline silicon wafer separated by an insulating layer (2) having an air gap (3). A well (15) is formed in the second wafer (4), over the air gap (3), and is subsequently trenched up to the air gap to release the monocrystalline silicon mass (23) forming the movable mass (24) of the sensor; the movable mass (24) has two numbers of movable electrodes (28a, 28b) facing respective pluralities of fixed electrodes (29a, 29b). In the idle condition, each movable electrode (28) is separated by different distances from the two fixed electrodes (29) facing the movable electrode.

公开(公告)号：DE69528958D1

公开(公告)日：2003-01-09

申请号：DE69528958

申请日：1995-01-31

Applicant: ST MICROELECTRONICS SRL

Inventor： BRAMBILLA DAVIDE ,  BOTTI EDOARDO ,  FERRARI PAOLO

IPC: H01L21/8222 ,  H01L27/06 ,  H01L29/861 ,  H01L27/00 ,  H01L27/02

Abstract: A monolithic output stage which is self-protected against the occurrence of incidental latch-up phenomena and integrated in a portion of a semiconductor material chip which is isolated by a peripheral barrier structure linked electrically to a terminal (Vcc), specifically a supply terminal being applied thereto a constant voltage (+Vcc), has the barrier structure coupled to the terminal (Vcc) through a forward biased diode (D1) from the terminal (Vcc). The integrated barrier structure is formed within a region (21'') having a first type of conductivity, and comprises a heavily doped well (29) having the first type of conductivity and a substantially annular shape and contacting a large surface of the chip (22). This structure is characterized in that, in at least one portion thereof close to contact regions (S) for connection to said terminal (Vcc), the barrier well (29) is split into first and second heavily doped concentrical regions (29' and 29'') having the first type of conductivity. The barrier structure further comprises, located at said portion, an intermediate region (30) which is less heavily doped and also has the first type of conductivity, and a surface region (31) with a second type of conductivity located within said intermediate region. The invention preferably involves a power output stage including a vertical PNP transistor isolated by said barrier well.

公开(公告)号：DE69702745T2

公开(公告)日：2000-12-07

申请号：DE69702745

申请日：1997-03-04

Applicant: ST MICROELECTRONICS SRL

Inventor： VIGNA BENEDETTO ,  FERRARI PAOLO ,  MONTANINI PIETRO ,  FERRERA MARCO

IPC: G01L9/08 ,  G01L9/00 ,  H01L29/84

Abstract: The method described provides for the formation of a region of silicon dioxide on a substrate (11) of monocrystalline silicon, the epitaxial growth of a silicon layer, the opening of holes (14') in the silicon layer above the silicon dioxide region, and the removal of the silicon dioxide which constitutes the region by means of chemical attack through the holes (14') until a silicon diaphragm (12'), attached to the substrate (11) along the edges and separated therefrom by a space (15), is produced. In order to form an absolute pressure microsensor, the space has to be sealed. To do this, the method provides for the holes (14') to have diameters smaller than the thickness of the diaphragm (12') and to be closed by the formation of a silicon dioxide layer (16) by vapour-phase deposition at atmospheric pressure.

公开(公告)号：DE69329489D1

公开(公告)日：2000-11-02

申请号：DE69329489

申请日：1993-02-24

Applicant: ST MICROELECTRONICS SRL

Inventor： BOTTI EDOARDO ,  FASSINA ANDREA ,  FERRARI PAOLO

IPC: H03F1/52

公开(公告)号：DE69702745D1

公开(公告)日：2000-09-14

申请号：DE69702745

申请日：1997-03-04

Applicant: ST MICROELECTRONICS SRL

Inventor： VIGNA BENEDETTO ,  FERRARI PAOLO ,  MONTANINI PIETRO ,  FERRERA MARCO

IPC: G01L9/08 ,  G01L9/00 ,  H01L29/84

Abstract: The method described provides for the formation of a region of silicon dioxide on a substrate (11) of monocrystalline silicon, the epitaxial growth of a silicon layer, the opening of holes (14') in the silicon layer above the silicon dioxide region, and the removal of the silicon dioxide which constitutes the region by means of chemical attack through the holes (14') until a silicon diaphragm (12'), attached to the substrate (11) along the edges and separated therefrom by a space (15), is produced. In order to form an absolute pressure microsensor, the space has to be sealed. To do this, the method provides for the holes (14') to have diameters smaller than the thickness of the diaphragm (12') and to be closed by the formation of a silicon dioxide layer (16) by vapour-phase deposition at atmospheric pressure.

公开(公告)号：ITTO20130540A1

公开(公告)日：2014-12-29

申请号：ITTO20130540

申请日：2013-06-28

Applicant: ST MICROELECTRONICS SRL

Inventor： CASTOLDI LAURA MARIA ,  FARALLI DINO ,  FERRARI PAOLO

公开(公告)号：DE60223136D1

公开(公告)日：2007-12-06

申请号：DE60223136

申请日：2002-06-20

Applicant: ST MICROELECTRONICS SRL

Inventor： MASTROMATTEO UBALDO ,  MURARI BRUNO ,  FERRARI PAOLO ,  SASSOLINI SIMONE

IPC: B81B3/00 ,  B81C1/00

Abstract: A micro-electro-mechanical device (20) formed by a body (4) of semiconductor material having a thickness and defining a mobile part (23, 24, 31) and a fixed part (3, 25, 30). The mobile part is formed by a mobile platform (23), supporting arms (31) extending from the mobile platform to the fixed part (3, 25, 30), and by mobile electrodes (24) fixed to the mobile platform. The fixed part has fixed electrodes (25) facing the mobile electrodes (24), a first biasing region (3) fixed to the fixed electrodes, a second biasing region (30) fixed to the supporting arms (31), and an insulation region (6) of insulating material extending through the entire thickness of the body (4). The insulation region (6) insulates electrically at least one between the first and the second biasing regions (3, 30) from the rest of the fixed part.