公开(公告)号：KR1020080031634A

公开(公告)日：2008-04-10

申请号：KR1020070099213

申请日：2007-10-02

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오까다미쯔히로 ,  미즈나가사또시 ,  도네가와야마또 ,  니시무라도시하루

IPC: H01L21/20 ,  H01L21/304

CPC classification number: C23C16/4405 ,  Y02C20/30 ,  Y02P70/605 ,  Y10S134/902

Abstract: A film formation apparatus and a method of using the same are provided to suppress diffusion of metal contaminations during film formation process by performing first and second cleaning processes for removing byproduct and metal contaminations produced from the inside of a reaction chamber. A method of using a film formation apparatus(1) comprises the step of: the first cleaning process of removing byproduct, produced from the inside of a reaction chamber(2) of the film formation apparatus, by using the first cleaning gas, wherein the reaction chamber is set at the first temperature and the first pressure where the first cleaning gas is activated; and the second cleaning process of removing metal contaminations, produced from the inside of the reaction chamber, by using the second cleaning gas, wherein the reaction chamber is set at the second temperature and the second pressure where the second cleaning gas containing chlorine-containing gas is activated.

Abstract translation: 提供一种成膜装置及其使用方法，用于通过进行第一和第二清洁处理以除去由反应室内部产生的副产物和金属污染物来抑制成膜过程中金属污染物的扩散。 使用成膜装置（1）的方法包括以下步骤：通过使用第一清洁气体从成膜装置的反应室（2）的内部除去副产物的第一清洁处理，其中 反应室设置在第一温度和第一清洗气体被激活的第一压力下; 以及通过使用第二清洗气体从反应室内部除去金属污染物的第二清洗处理，其中反应室设定在第二温度和第二压力，第二清洗气体含有含氯气体 被激活。

公开(公告)号：KR1020060002805A

公开(公告)日：2006-01-09

申请号：KR1020057016676

申请日：2004-04-20

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 하세베가즈히데 ,  오까다미쯔히로 ,  지바다까시 ,  오가와쥰

IPC: H01L21/302 ,  H01L21/3065

CPC classification number: H01L21/31116

Abstract: A method for removing a silicon oxide film is disclosed which enables to efficiently remove a silicon oxide film such as a natural oxide film or a chemical oxide film at a temperature considerably higher than room temperature. In the method for removing a silicon oxide film formed on the surface of an object (W) to be processed within an evacuatable process chamber (18), the silicon oxide film is removed by using a mixed gas of HF gas and NH3 gas. By using the mixed gas of HF gas and NH3 gas, the silicon oxide film formed on the surface of the object can be efficiently removed.

Abstract translation: 公开了一种去除氧化硅膜的方法，其能够在远高于室温的温度下有效地除去氧化硅膜，例如天然氧化物膜或化学氧化物膜。 在除去在可抽空处理室（18）内待处理物体（W）的表面上形成的氧化硅膜的方法中，通过使用HF气体和NH 3气体的混合气体除去氧化硅膜。 通过使用HF气体和NH 3气体的混合气体，可以有效地除去形成在物体表面上的氧化硅膜。

公开(公告)号：KR1020050021339A

公开(公告)日：2005-03-07

申请号：KR1020040067671

申请日：2004-08-27

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 후지따다께히꼬 ,  다무라아끼따께 ,  스즈끼게이스께 ,  하세베가즈히데 ,  오까다미쯔히로

IPC: H01L21/324

CPC classification number: H01L21/67109 ,  C23C16/4401 ,  C23C16/46

Abstract: PURPOSE: A heat treatment method is provided to control the particles adhered to an object to be processed by easily exhausting the particles of the object to be processed and a retaining support unit to the outside of a reaction chamber. CONSTITUTION: A retaining support unit in which a plurality of objects to be processed are retained at an interval of a predetermined pitch is carried into a reaction chamber. The inside of the reaction chamber having the retaining support unit is increased in temperature and reduced in pressure, wherein the inside of the reaction chamber is decompressed 1-5 minutes after the temperature of the inside of the reaction chamber starts to increase.

Abstract translation: 目的：提供一种热处理方法，通过容易地将待处理物体的颗粒和保持支撑单元排出到反应室的外部来控制附着于待处理物体的颗粒。 构成：以预定间距的间隔保持待处理的多个物体的保持支撑单元被携带到反应室中。 具有保持支撑单元的反应室的内部温度升高并且压力降低，其中反应室内部在反应室内部的温度开始增加之后1-5分钟减压。