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公开(公告)号：KR1020170082689A
公开(公告)日：2017-07-17
申请号：KR1020160001634
申请日：2016-01-06
Applicant: 삼성전자주식회사
IPC: H01L27/108 , H01L27/08 , H01L49/02
CPC classification number: H01L27/10811 , H01L27/10814 , H01L27/10847 , H01L29/4238
Abstract: 커패시터를제공한다. 커패시터는, 제1 방향으로적층된제1 전극및 제2 전극을각각포함하는하부전극들을포함한다. 제2 전극은제1 방향과수직인제2 및제3 방향들에의해정의되는단면적관점에서, 장축을갖는바 형단면을갖는기둥형상을갖는다.
Abstract translation: Lt。 电容器包括下电极，每个下电极包括在第一方向上堆叠的第一电极和第二电极。 鉴于由垂直于第一方向的第二和第三方向限定的横截面积，第二电极具有具有长轴的横截面的条形柱状。
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公开(公告)号：KR1020170010498A
公开(公告)日：2017-02-01
申请号：KR1020150102208
申请日：2015-07-20
Applicant: 삼성전자주식회사
IPC: H01L27/108 , H01L21/3105
CPC classification number: H01L27/10894 , H01L27/10852 , H01L27/10855 , H01L27/10876 , H01L27/10885
Abstract: 셀영역및 주변회로영역을포함하는기판의셀 영역상에각각이제3 방향으로연장되는복수의제1 패턴들을제3 방향과교차하는제1 방향을따라형성하고, 기판의주변회로영역상에제2 패턴을형성한다. 제3 방향과교차하는제4 방향으로각각연장되는복수의제1 마스크들을제1 패턴들상에제1 방향을따라형성하고, 제2 마스크를제2 패턴상에형성한다. 제1 마스크들사이에각각이제4 방향으로연장되는복수의제3 마스크들을형성한다. 제1 내지제3 마스크들을식각마스크로사용하여제1 및제2 패턴들을식각함으로써각각제3 및제4 패턴들을형성한다. 제3 및제4 패턴들을식각마스크로사용하여기판상부를식각함으로써각각제1 및제2 액티브패턴들을셀 영역및 주변회로영역에각각형성한다.
Abstract translation: 在形成有源图案的方法中，在基板的单元区域上沿第一方向形成第一图案，并且在基板的外围电路区域上形成第二图案。 第一图案沿与第一方向交叉的第三方向延伸。 第一掩模在第一图案上沿第一方向形成，第二掩模形成在第二图案上。 第一掩模沿与第三方向交叉的第四方向延伸。 第三掩模形成在沿第四方向延伸的第一掩模之间。 使用第一至第三掩模蚀刻第一和第二图案以形成第三和第四图案。 使用第三和第四图案蚀刻衬底的上部，以在单元和外围电路区域中形成第一和第二有源图案。
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公开(公告)号：KR1020130046641A
公开(公告)日：2013-05-08
申请号：KR1020110111150
申请日：2011-10-28
Applicant: 삼성전자주식회사
IPC: H01L27/115 , H01L21/8247
CPC classification number: H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/1293 , H01L45/141 , H01L45/144 , H01L45/1616 , H01L45/1625 , H01L45/1675 , H01L45/143
Abstract: PURPOSE: A phase change memory device and a method for manufacturing the same are provided to prevent a thermal cross talk phenomenon by forming a phase change material pattern in a diagonal direction. CONSTITUTION: Word lines(20) are arranged in a second direction. The second direction is orthogonal to a first direction. Bottom electrodes(40) are arranged on the word lines. The bottom electrodes are arranged with a first tilt angle in the first direction. Phase change material patterns(50) are arranged on the bottom electrodes. [Reference numerals] (AA) First direction; (BB) Second direction
Abstract translation: 目的：提供相变存储器件及其制造方法，以通过在对角线方向上形成相变材料图案来防止热串扰现象。 构成：字线（20）布置在第二个方向。 第二方向与第一方向正交。 底部电极（40）布置在字线上。 底部电极在第一方向上以第一倾斜角度布置。 相变材料图案（50）布置在底部电极上。 （附图标记）（AA）第一方向; （BB）第二方向
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Patent Agency Ranking
公开(公告)号：KR1020130007255A
公开(公告)日：2013-01-18
申请号：KR1020110064867
申请日：2011-06-30
Applicant: 삼성전자주식회사
IPC: H01L21/8242 , H01L27/108
CPC classification number: H01L28/90 , H01L27/10852
Abstract: PURPOSE: A method for manufacturing a semiconductor device is provided to prevent material reaction between a sacrificial layer and a bottom electrode by forming a conformal silicide preventing layer in the inner wall of an opening part. CONSTITUTION: A sacrificial layer(151,153) and a support layer(152,154) are successively laminated on a composite layer(150). The composite layer is formed on a substrate(100). A plurality of opening passing through the composite layer are formed. The opening unit exposes a lower contact plug(130) via the composite layer and an etch stop layer(140). A bottom electrode(180) is formed in the plurality of opening parts. A part of a support layer and a part or the entire of the sacrificial layer are removed. A silicide preventing layer(170) is formed in the inner wall of the opening part.
Abstract translation: 目的：提供一种用于制造半导体器件的方法，以通过在开口部的内壁中形成保形硅化物防止层来防止牺牲层与底部电极之间的材料反应。 构成：牺牲层（151,153）和支撑层（152,154）依次层压在复合层（150）上。 复合层形成在基板（100）上。 形成穿过复合层的多个开口。 打开单元通过复合层和蚀刻停止层（140）暴露下接触塞（130）。 底部电极（180）形成在多个开口部分中。 支撑层的一部分和牺牲层的一部分或全部被去除。 在开口部的内壁形成硅化物防止层（170）。
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公开(公告)号：KR1020120038086A
公开(公告)日：2012-04-23
申请号：KR1020100099639
申请日：2010-10-13
Applicant: 삼성전자주식회사
IPC: H01L21/68 , H01L21/683 , B23Q3/18 , H01L21/027
CPC classification number: G03B27/58 , G03B27/53 , G03F7/70775 , G03F9/7088 , H01L21/682 , B23Q3/186 , G03F7/70716 , G03F9/7003 , H01L21/0274 , H01L21/6831
Abstract: PURPOSE: A method for precisely aligning a wafer stage, a device thereof, and an exposure device including the same are provided to form a photoresist pattern with a desirable shape by improving overlay accuracy between a wafer stage and a reticle holder. CONSTITUTION: Diagonal directions of a wafer stage are arranged in an X axis and a Y axis(ST150). The wafer stage moves along the X axis(ST152). A first coordinate of the wafer stage is measured in a first location inclined to the X-axis(ST154). The wafer stage moves along the Y axis(ST156). A second coordinate of the wafer stage is measured in a second location inclined to the Y axis(ST158).
Abstract translation: 目的：提供用于精确对准晶片台，其装置和包括该晶片载片的曝光装置的方法，以通过提高晶片台和光罩保持器之间的重叠精度来形成具有期望形状的光致抗蚀剂图案。 构成：将晶片台的对角方向配置在X轴和Y轴（ST150）。 晶圆台沿X轴移动（ST152）。 在与X轴倾斜的第一位置测量晶片台的第一坐标（ST154）。 晶片台沿Y轴移动（ST156）。 在与Y轴倾斜的第二位置测量晶片台的第二坐标（ST158）。
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公开(公告)号：KR1020100064024A
公开(公告)日：2010-06-14
申请号：KR1020080122428
申请日：2008-12-04
Applicant: 삼성전자주식회사
Abstract: PURPOSE: A tub and a washing machine including the same are provided to reduce manufacturing costs by screwed combining a front tub and a rear tub without a plurality of screws. CONSTITUTION: A washing machine comprises a tub which is composed of a front tub(21) and a rear tub(26). The front tub and the rear tub are combined each other and form a screw part, respectively. The front tub and the rear tub are screwed. One or more stopper(24) is formed on the exterior of one among the front tub and the rear tub and forms a combining hole(25). One or more protrusion(29) which is inserted in the combining hole is formed on the exterior of the other among the front tub and the rear tub.
Abstract translation: 目的：提供一种浴缸和包括该洗衣机的洗衣机，以通过拧紧组合前浴缸和后浴缸而不用多个螺钉来降低制造成本。 构成：洗衣机包括由前桶（21）和后桶（26）组成的桶。 前浴缸和后浴缸分别组合并形成螺钉部分。 前浴缸和后浴缸拧紧。 一个或多个塞子（24）形成在前桶和后桶中的一个的外部上并形成组合孔（25）。 插入组合孔中的一个或多个突起（29）形成在前桶和后桶中的另一个的外部。
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公开(公告)号：KR1020080084368A
公开(公告)日：2008-09-19
申请号：KR1020070026034
申请日：2007-03-16
Applicant: 삼성전자주식회사
IPC: H01L21/304 , H01L21/02
CPC classification number: F04C18/126 , B08B3/02 , B08B5/02 , F04C23/001 , F04C29/0092 , F04C2220/10 , F04C2280/02
Abstract: A unit for cleaning a rotation body and a vacuum pump having the same are provided to form a layer for preventing process byproducts from being adhered by employing a cleaning unit that is placed between protrusions prepared on the rotation body. A rotation body(100) has protrusions(120) and a rotation shaft(110). A cleaning unit(300) is arranged near to the protrusions to clean the rotation body. The cleaning unit is comprised of a cleaning body(310) with a chamber formed therein, injection holes(350) communicating the chamber with the outside and being formed on an outer circumference of the cleaning body toward the rotation body, a supply channel(330) being formed on the cleaning body to couple the chamber to the outside, and a supplier(320) being connected to the supply channel to supply a cleaning material into the chamber. The cleaning body is arranged to wrap the rotation shaft. The chamber has inclined surfaces which are symmetrical to each other on the basis of a perpendicular with respect to the rotation shaft.
Abstract translation: 提供一种用于清洁旋转体的单元和具有该单元的真空泵，以形成用于通过使用放置在旋转体上的突起之间的清洁单元来防止加工副产物粘附的层。 旋转体（100）具有突起（120）和旋转轴（110）。 清洁单元（300）布置在突起附近以清洁旋转体。 清洁单元包括：形成有腔室的清洁体（310），将腔室与外部连通并且形成在清洁体的外周上的喷射孔（350）朝向旋转体;供给通道（330） ）形成在所述清洁体上以将所述室耦合到外部，并且供应器（320）连接到所述供应通道以将清洁材料供应到所述室中。 清洁体被布置成包裹旋转轴。 腔室具有相对于旋转轴的垂直线彼此对称的倾斜表面。
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公开(公告)号：KR1020070051965A
公开(公告)日：2007-05-21
申请号：KR1020050109405
申请日：2005-11-16
Applicant: 삼성전자주식회사
IPC: H01L21/027
Abstract: 기판 노광 공정에 사용되는 레티클에 있어서, 이미지 패턴이 형성된 유리 기판과, 상기 이미지 패턴의 오염을 방지하기 위한 보호 기판과 상기 유리 기판과 보호 기판 사이에 구비되며, 상기 기판들 사이에서 진공 상태로 유지되며, 그 내부에는 불활성 가스가 충진되어 있는 공간을 형성하기 위한 개스킷과 상기 보호 기판 이 오염되는 것을 방지하기 위한 펠리클막을 포함한다. 상기 밀폐 공간은 진공 상태로 유지되며, 그 내부에는 불활성 가스가 충진되어 있다. 따라서, 상기 유리 기판과 보호 기판 사이의 오염 물질의 제거 및 성장성 이물질 발생을 억제하며, 상기 기판들 사이이 탈부착의 용이성을 확보할 수 있다.
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