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公开(公告)号：KR1020110044453A
公开(公告)日：2011-04-29
申请号：KR1020090101134
申请日：2009-10-23
Applicant: 한국전자통신연구원
IPC: H04B10/2581 , H04B10/50 , H04B10/60
CPC classification number: H04L25/0226 , H04B10/532 , H04B10/548 , H04J14/06 , H04L27/2613
Abstract: PURPOSE: A polarization division multiplexed optical OFDM(Orthogonal Frequency Division Multiplexing) transceiver is provided to improve the allowed value due to a non linear effect by reducing electric power difference between adjacent training symbols. CONSTITUTION: A data separation unit multiplexes a transmission signal into a plurality of groups. A training signal generation unit(160) allocates a plurality of training symbols about each OFDM data. The training signal generation unit allocates consecutive data at a time domain about each training symbols in order to generate '0'. A polarization multiplex unit(180) outputs polarization division multiplexed optical OFDM signal corresponding to each polarization component by performing polarization division multiplexing.
Abstract translation: 目的：提供一种偏振分复用光OFDM（正交频分复用）收发器，通过减少相邻训练符号之间的电功率差异来提高由非线性效应引起的允许值。 构成：数据分离单元将发送信号复用为多个组。 训练信号生成单元（160）分配关于每个OFDM数据的多个训练符号。 训练信号生成单元在时域上分配关于每个训练符号的连续数据，以生成“0”。 极化复用单元（180）通过进行极化分割复用来输出与各极化分量对应的偏振复用光OFDM信号。
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公开(公告)号：KR1020080110975A
公开(公告)日：2008-12-22
申请号：KR1020080125139
申请日：2008-12-10
Applicant: 한국전자통신연구원
IPC: H01S5/12
CPC classification number: H01S5/1243 , H01S5/125 , H01S5/3211
Abstract: A modulator integrated distributed feedback laser diode removing operation property fluctuation of laser by light and manufacturing method thereof are provided to apply EML(Electro Modulated Laser) in ultra high speed optical communications system by forming a slope on a light output side of the modulator by etching process. A modulator integrated distributed feedback laser diode comprises a semiconductor substrate(13), a N-type semiconductor doped layer, a active layer, a P-type semiconductor doped layer, a N-type electrode, and a P-type electrode. The N-type semiconductor doped layer, active layers(16, 17), and the P-type semiconductor doped layer are laminated on the semiconductor substrate as an optical guide form. The N-type electrode is formed on the N-type semiconductor doped layer as a ground electrode. The P-type electrode is formed on the P-type semiconductor doped layer with two sections. The two sections of the P-type electrode are arranged on respective the modulator and the distributed feedback laser.
Abstract translation: 提供调制器集成分布反馈激光二极管，通过光除去激光器的操作特性波动及其制造方法，以通过在调制器的光输出侧通过蚀刻形成斜率来在超高速光通信系统中应用EML（电调制激光器） 处理。 调制器集成分布反馈激光二极管包括半导体衬底（13），N型半导体掺杂层，有源层，P型半导体掺杂层，N型电极和P型电极。 N型半导体掺杂层，有源层（16,17）和P型半导体掺杂层作为光导形式层压在半导体衬底上。 N型电极形成在N型半导体掺杂层上作为接地电极。 P型电极形成在具有两个部分的P型半导体掺杂层上。 P型电极的两个部分分别布置在调制器和分布式反馈激光器上。
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公开(公告)号：KR1020040057855A
公开(公告)日：2004-07-02
申请号：KR1020030016276
申请日：2003-03-15
Applicant: 한국전자통신연구원
IPC: H01L31/10
Abstract: PURPOSE: A light receiving device is provided to reduce operation voltage and improve bandwidth by using a quantum well type structure as a light absorption layer. CONSTITUTION: A light receiving device is provided with a lower cladding layer(301a) including an N type doping region, a light absorption layer, an upper cladding layer(305) including a P type doping region, and an ohmic electrode connected with each cladding layer. The P type doping region is prolonged into the light absorption layer as much as a predetermined length. The distance between the N type and P type doping region is in the range of 0.6-1.2 μm. A quantum well type structure is used as the light absorption layer. The quantum well type structure is completed by alternately forming a quantum well barrier(302) and a quantum well layer(303).
Abstract translation: 目的：提供一种光接收装置，通过使用量子阱型结构作为光吸收层来降低工作电压并提高带宽。 构成：光接收装置设置有包括N型掺杂区域的下包层（301a），光吸收层，包括P型掺杂区域的上包层（305）和与每个包层连接的欧姆电极 层。 P型掺杂区域长达预定长度的光吸收层。 N型和P型掺杂区之间的距离在0.6-1.2μm的范围内。 使用量子阱型结构作为光吸收层。 通过交替地形成量子阱势垒（302）和量子阱层（303）来完成量子阱类型结构。
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公开(公告)号：KR101777225B1
公开(公告)日：2017-09-12
申请号：KR1020110136694
申请日：2011-12-16
Applicant: 한국전자통신연구원
IPC: H01L31/107
CPC classification number: H01L31/107
Abstract: 본발명은아발란치포토다이오드및 그의제조방법을개시한다. 그의포토다이오드는기판과, 상기기판상에형성된광 흡수층과, 상기광 흡수층 상에형성된클래드층과, 상기클래드층 내에형성된활성영역과, 상기활성영역의둘레에형성된가드링영역과, 상기가드링영역과상기활성영역사이에형성된절연영역을포함한다.
Abstract translation: 本发明公开了一种雪崩光电二极管及其制造方法。 他的光电二极管包括基板，形成在基板上的光吸收层，以及形成在所述光吸收层，所述保护环区域和形成在有源区，所述包层覆盖层，形成在有源区的外周，保护环 并且在该区域和有源区域之间形成绝缘区域。
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Patent Agency Ranking
公开(公告)号：KR1020170095455A
公开(公告)日：2017-08-23
申请号：KR1020160016435
申请日：2016-02-12
Applicant: 한국전자통신연구원
IPC: H01L29/778 , H01L29/66 , H01L29/78 , H01L29/45 , H01L29/417
CPC classification number: H01L29/404 , H01L21/6835 , H01L29/0619 , H01L29/0657 , H01L29/2003 , H01L29/205 , H01L29/401 , H01L29/4175 , H01L29/66462 , H01L29/7786 , H01L29/7787 , H01L2221/68327 , H01L2221/6834
Abstract: 본발명의실시예에따른고전자이동도트랜지스터는서로마주보는제1면과제2 면을포함하고, 상기제1 면과상기제2 면을관통하는비아홀을구비한기판과, 상기기판의제1 면상에제공된활성층과, 상기활성층상에위치하고상기활성층의일부를노출하는게이트리쎄스영역을포함한캡층과, 상기캡층상에위치하며상기캡층및 상기활성층중 어느하나의층에오믹접촉한소스전극과, 상기캡층상에서상기소스전극으로부터이격되며상기캡층에오믹접촉한드레인전극과, 상기소스전극과상기드레인전극상에위치하고상기게이트리쎄스영역에대응되는개구부를구비하여상기게이트리쎄스영역을노출시키는절연층과, 상기절연층상에서상기소스전극과상기드레인전극사이에위치한제1 전계전극과, 상기절연층상에서상기제1 전계전극과전기적으로연결된게이트전극및 상기기판의제2 면상에제공되며상기비아홀을통해상기활성층과접촉되는제2 전계전극을포함한다.
Abstract translation: 根据本发明的晶体管包括彼此面对的第一表面分配第二表面的一个实施例的高电子迁移率，通孔具有贯穿该第一表面和第二表面的衬底，所述第一的所述衬底 和设置在所述表面上，其中，所述活性位于所述层上的覆盖层，包括一栅极栗sseseu区域以暴露所述有源层的一部分和定位在所述层上的帽和帽层中的任何一个层的欧姆接触的源电极与所述有源层和在有源层 从源电极在所述帽层并定位在欧姆接触漏电极，源电极和与具有暴露栅极栗sseseu区域对应于栅极栗sseseu面积的开口的帽层的漏电极，间隔开 绝缘层，第一场电极位于所述绝缘层上的源电极和在所述绝缘层和所述第一栅电极连接到所述第一场电极及电漏电极与所述设备之间 议程设置和第二侧面包括第二场电极，其与通过通孔的有源层接触。
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公开(公告)号：KR1020160113482A
公开(公告)日：2016-09-29
申请号：KR1020150039173
申请日：2015-03-20
Applicant: 한국전자통신연구원
CPC classification number: G02B6/29355 , G02F2001/212
Abstract: 자및 모마흐-젠더광변조기의광모니터링을가능케하며, 소자길이를소형화하고, 반도체공정중 포토리소그래피에서발생할수 있는 MMI의선폭오차에대해우수한공정허용오차를제공하는마흐-젠더간섭계형멀티레벨광변조기가개시된다. 이를위해, 본발명의실시예에따른마흐-젠더간섭계형멀티레벨광변조기에있어서, 자마흐-젠더광변조기의 1×2 MMI 광합파기는, 출력측에형성되며, 중심축부에구성되는출력포트; 및출력측에형성되며, 모니터링광을출력하도록구성되는모니터링유닛을포함하여구성되는것을특징으로한다.
Abstract translation: 公开了一种马赫 - 策德尔干涉式多电平调制器，用于能够对儿童和母马赫兹德尔调制器进行光学监测，使元件的长度最小化，并为能够产生的MMI的宽度公差提供优异的工艺允许公差 在半导体工艺中的光刻工艺中。 为此，根据本发明的实施例的儿童马赫 - 曾德干涉式多电平调制器的12MMI光复用器包括：输出端口，其形成在输出端并被配置在中心轴单元中; 以及监视单元，被配置为输出监视光。
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公开(公告)号：KR1020160040093A
公开(公告)日：2016-04-12
申请号：KR1020150132411
申请日：2015-09-18
Applicant: 한국전자통신연구원
IPC: H04N5/335 , H04N5/3745 , H04N13/02 , H04N13/00
Abstract: 독출회로어레이는제 1 독출회로, 제 2 독출회로및 정보저장부를포함한다. 상기제 1 독출회로는제 1 광검출기셀로부터전기신호를수신하여제 1 광수신정보를생성한다. 상기제 2 독출회로는제 2 광검출기셀로부터전기신호를수신하여제 2 광수신정보를생성한다. 상기정보저장부는상기제 1 광수신정보및 상기제 2 광수신정보를저장한다.
Abstract translation: 读出电路阵列包括：第一读出电路，第二读出电路和信息存储单元。 第一读出电路从第一光检测器单元接收电信号以产生第一光接收信息。 第二读出电路从第二光检测器单元接收电信号以产生第二光接收信息。 信息存储单元存储第一光接收信息和第二光接收信息。 因此，读出电路阵列有效地使用电路部件的占用面积。
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公开(公告)号：KR1020160025652A
公开(公告)日：2016-03-09
申请号：KR1020140112158
申请日：2014-08-27
Applicant: 한국전자통신연구원
IPC: G02B6/12
CPC classification number: G02B6/1228 , G02B6/12016 , G02B6/125 , G02B6/305
Abstract: 광입출력결합효율을향상시킬수 있는광 도파로에관한기술이개시된다. 광도파로는기판상에배치되는주 도파로및 주도파로상에배치되는보조도파로를포함하되, 주도파로와보조도파로각각은, 일측이제1 광결합매체와접속되는종단영역및 일측이종단영역의타측에접속되고, 종단영역의타측을기준으로타측방향으로테이퍼(Taper) 형상을갖는테이퍼영역을포함하고, 주도파로와보조도파로의종단영역일측은제1 광결합매체에접속되어광 입출력결합에모두가참여한다.
Abstract translation: 公开了能够实现光输入/输出组合效率的光波导技术。 光波导包括：放置在基板上的主波导; 以及放置在主波导上的副波导。 主波导和副波导中的每一个包括：其一侧连接到第一光学组合介质的端接区域; 以及其一侧与终端区域的另一侧连接的锥形区域，并且在终端区域的另一侧的另一侧方向具有锥形形状。 主波导和副波导的终端区域的一侧连接到第一光学组合介质，使得所有的组件参与光输入/输出组合。
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公开(公告)号：KR1020140001299A
公开(公告)日：2014-01-07
申请号：KR1020120067891
申请日：2012-06-25
Applicant: 한국전자통신연구원
CPC classification number: G01J1/42 , G01S7/481 , G01S7/4863 , G01S7/4914 , G01S17/42 , G01S17/89
Abstract: The present invention relates to an apparatus for acquiring three dimensional information for detecting information of wide area by making an array of photo detectors, in measuring a three dimensional image by that a light of a laser radar for three dimensional image measurement is reflected from a target object and then is incident on the photo detector through a light receiving lens. The apparatus for acquiring three dimensional information includes: a light source part for generating a light signal of fixed wavelength band; a light transmission optical lens part which is prepared on the path of the light signal and irradiates the light signal outputted from the light source in a parallel or constant angle; a light scanning part for scanning the light outputted from the light transmission optical lens to the surface of an object to measure; a light receiving optical lens part for collecting the light reflected from the surface of the object; and a light detection part for converting the light signal collected by making an array of more than one photo detector for a light receiving part to be gathered at the center, into a current signal respectively.
Abstract translation: 本发明涉及一种用于通过制作光电检测器的阵列来获取用于检测广域的信息的三维信息的装置，用于通过用于三维图像测量的激光雷达的光从目标反射来测量三维图像 然后通过光接收透镜入射到光电检测器上。 用于获取三维信息的装置包括：用于产生固定波长带的光信号的光源部分; 光传输光学透镜部件，其在光信号的路径上准备并以平行或恒定的角度照射从光源输出的光信号; 光扫描部，用于将从光透射光学透镜输出的光扫描到待测物体的表面; 光接收光学透镜部分，用于收集从物体表面反射的光; 以及光检测部分，用于通过将用于待聚集在中心的光接收部分的多于一个光检测器的阵列分别收集的光信号转换成电流信号。
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