COMPOSITION FOR MANUFACTURING INTEGRATED CIRCUIT DECICES, OPTICAL DEVICES, MICROMACHINES AND MECHANICAL PRECISION DEVICES

    公开(公告)号:MY171072A

    公开(公告)日:2019-09-24

    申请号:MYPI2015000076

    申请日:2013-07-12

    Applicant: BASF SE

    Abstract: Aqueous composition for developing photoresists applied to semiconductor substrates, said aqueous composition comprising a quaternary ammonium compound of formula I Wherein a) R1 is selected from a C4 to C30 organic radical of formula -X-CR10R11R12, wherein R10, R11 and R12 are independently selected from a C1 to C20 alkyl and two or three of R10, R11 and R12 may together form a ring system, and R2, R3 and R4 are selected from R1 or a C1 to C10 alkyl, C1 to C10 hydroxyalkyl C1 to C30 aminoalkyl or C1 to C20 alkoxyalkyl, and X is a chemical bond or a C1 to C4 divalent organic radical, or b) R1 and R2 are independently selected from an organic radical of formula Ila or lib wherein Y1 is C4 to C20 alkanediyl, Y2 is a one-, two- or tricyclic C5 to C20 carbocyclic or heterocyclic aromatic system, and R3 and R4 are selected from R1 or a C1 to C10 alkyl, C1 to C10 hydroxyalkyl, C1 to C30 aminoalkyl, or C1 to C20 alkoxyalkyl, and X is a chemical bond or a C1 to C4 divalent organic radical, and X is a chemical bond or a C1 to C4 divalent organic radical, or c) at least two of R1, R2, R3, and R4 together form a saturated mono, bi or tricyclic C5 to C30 organic ring system and the remaining R3 and R4, if any, together form a monocyclic C5 to C30 organic ring system or are selected from a C1 to C10 alkyl, C1 to C10 hydroxyalkyl, C1 to C30 aminoalkyl, or C1 to C20 alkoxyalkyl, and X is a chemical bond or a C1 to C4 divalent organic radical, or d) a combination thereof, and wherein Z is a counter-ion and z is an integer, which is chosen so that the overall bulky quaternary ammonium compound is electrically uncharged.

    AQUEOUS ALKALINE CLEANING COMPOSITIONS AND METHOD OF THEIR USE

    公开(公告)号:MY163493A

    公开(公告)日:2017-09-15

    申请号:MYPI2012005247

    申请日:2011-07-12

    Applicant: BASF SE

    Abstract: AQUEOUS ALKALINE CLEANING COMPOSITION FREE FROM ORGANIC SOLVENTS AND METAL ION-FREE SILICATES, THE SAID COMPOSITIONS COMPRISING (A) A THIOAMINO ACID HAVING AT LEAST ONE PRIMARY AMINO GROUP AND AT LEAST ONE MERCAPTO GROUP, (B) A QUATERNARY AMMONIUM HYDROXIDE, (C) A CHELATING AND/OR CORROSION INHIBITING AGENT SELECTED FROM THE GROUP CONSISTING OF ALIPHATIC AND CYCLOALIPHATIC AMINES HAVING AT LEAST TWO PRIMARY AMINO GROUPS, AND ALIPHATIC AND CYCLOALIPHATIC AMINES HAVING AT LEAST ONE HYDROXY GROUP, (D) A NONIONIC SURFACTANT SELECTED FROM THE GROUP OF ACETYLENIC ALCOHOLS, ALKYLOXYLATED ACETYLENIC ALCOHOLS AND ALKYLOXYLATED SORBITAN MONOCARBOXYLIC ACID MONO ESTERS; THE USE OF THE ALKALINE CLEANING COMPOSITION FOR THE PROCESSING OF SUBSTRATES USEFUL FOR FABRICATING ELECTRICAL AND OPTICAL DEVICES; AND A METHOD FOR PROCESSING SUBSTRATES USEFUL FOR FABRICATING ELECTRICAL AND OPTICAL DEVICES MAKING USE OF THE SAID AQUEOUS ALKALINE CLEANING COMPOSITION.

    КОМПОЗИЦИИ ДЛЯ УДАЛЕНИЯ РЕЗИСТА И СПОСОБЫ ИЗГОТОВЛЕНИЯ ЭЛЕКТРИЧЕСКИХ УСТРОЙСТВ

    公开(公告)号:RU2551841C2

    公开(公告)日:2015-05-27

    申请号:RU2011149552

    申请日:2010-04-20

    Applicant: BASF SE

    Inventor: KLIPP ANDREAS

    Abstract: Изобретениеотноситсяк способуизготовленияэлектрическихустройств, содержащемустадии: 1) нанесениеизоляционногодиэлектрическогослоя, состоящегоизпоменьшеймереодногоматериалас низкойилиультранизкойдиэлектрическойпроницаемостью, наповерхностьподложки, 2) нанесениепозитивногоилинегативногослоярезистанаповерхностьизоляционногодиэлектрическогослоя, 3) подверганиеслоярезистаселективномувоздействиюэлектромагнитногоизлученияиликорпускулярногоизлучения, 4) проявлениеселективноподвергнутогоизлучениюслоярезистадляобразованиярисункав резисте, 5) сухоетравлениеизоляционногодиэлектрическогослояс использованиемрисункав резистев качествемаскидляобразованияпроводныхканавоки/илисквозныхотверстий, сообщающихсяс поверхностьюподложки, 6) выборпоменьшеймереодногополярногоорганическогорастворителя (А) изгруппы, состоящейиз: диэтилентриамина, N-метилимидазола, 3-амино-1-пропанола, 5-амино-1-пентанолаи диметилсульфоксида, проявляющегов присутствииот 0,06 до 4 мас. % растворенногогидроксидатетраметиламмония (В), массоваядолякотороговзята, исходяизполноговесасоответствующеготестируемогораствора, постояннуюинтенсивностьудаленияпри 50°C дляполимерногобарьерногопросветляющегослоятолщиной 30 нм, содержащегохромофорныегруппы, поглощающиедальнееУФ-излучение, 7) обеспечениепоменьшеймереоднойкомпозициидляудалениярезиста, несодержащей N-алкилпирролидонаи гидроксиламинаи производныхгидроксиламинаи обладающейдинамическойсдвиговойвязкостьюпри 50°C от 1 до 10 мПа·с, измереннойметодомротационнойвискозиметрии, исодержащей, исхо�

    RESIST STRIPPING COMPOSITIONS AND METHODS FOR MANUFACTURING ELECTRICAL DEVICES

    公开(公告)号:SG175820A1

    公开(公告)日:2011-12-29

    申请号:SG2011079381

    申请日:2010-04-20

    Applicant: BASF SE

    Inventor: KLIPP ANDREAS

    Abstract: A liquid composition free from N-alkylpyrrolidones and hydroxyl amine and its derivatives, having a dynamic shear viscosity at 50°C of from 1 to 10 mPas as measured by rotational viscometry and comprising based on the complete weight of the composition, (A) of from 40 to 99.95% by weight of a polar organic solvent exhibiting in the presence of dissolved tetramethylammonium hydroxide (B) a constant removal rate at 50°C for a 30 nm thick polymeric barrier anti-reflective layer containing deep UV absorbing chromophoric groups, (B) of from 0.05 to

    COMPOSITION FOR POST CHEMICAL-MECHANICAL POLISHING CLEANING

    公开(公告)号:SG172360A1

    公开(公告)日:2011-08-29

    申请号:SG2011046331

    申请日:2010-01-06

    Applicant: BASF SE

    Abstract: The present invention relates to a composition for post chemical-mechanical polishing (CMP) cleaning. The composition is alkaline, which can remove azole-type corrosion inhibitors on the wafer surface after CMP. This composition can effectively remove azole compounds, increase wettability of the Cu surface, and significantly improve the defect removal after CMP.

    CHEMICAL-MECHANICAL POLISHING COMPOSITION COMPRISING BENZOTRIAZOLE DERIVATIVES AS CORROSION INHIBITORS
    48.
    发明公开
    CHEMICAL-MECHANICAL POLISHING COMPOSITION COMPRISING BENZOTRIAZOLE DERIVATIVES AS CORROSION INHIBITORS 有权
    ZUSAMMENSETZUNGFÜRCHEMISCH-MECHANISCHES POLIEREN MIT BENZOTRIAZOLDERIVATEN ALS KORROSIONSINHIBITOREN

    公开(公告)号:EP3019569A4

    公开(公告)日:2017-05-03

    申请号:EP14823844

    申请日:2014-07-01

    Applicant: BASF SE

    CPC classification number: C09K3/1463 C09G1/02 H01L21/3212

    Abstract: A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.

    Abstract translation: 提供化学机械抛光(CMP)组合物,其包含(A)一种或多种选自苯并三唑衍生物(用作腐蚀抑制剂)和(B)无机颗粒,有机颗粒或其复合物或混合物的化合物。 本发明还涉及选自苯并三唑衍生物的某些化合物作为腐蚀抑制剂的用途,尤其是用于提高化学机械抛光(CMP)组合物用于从基底去除钽或氮化钽的选择性,用于制造 在所述衬底上存在铜的情况下的半导体器件。

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