Abstract:
Aqueous composition for developing photoresists applied to semiconductor substrates, said aqueous composition comprising a quaternary ammonium compound of formula I Wherein a) R1 is selected from a C4 to C30 organic radical of formula -X-CR10R11R12, wherein R10, R11 and R12 are independently selected from a C1 to C20 alkyl and two or three of R10, R11 and R12 may together form a ring system, and R2, R3 and R4 are selected from R1 or a C1 to C10 alkyl, C1 to C10 hydroxyalkyl C1 to C30 aminoalkyl or C1 to C20 alkoxyalkyl, and X is a chemical bond or a C1 to C4 divalent organic radical, or b) R1 and R2 are independently selected from an organic radical of formula Ila or lib wherein Y1 is C4 to C20 alkanediyl, Y2 is a one-, two- or tricyclic C5 to C20 carbocyclic or heterocyclic aromatic system, and R3 and R4 are selected from R1 or a C1 to C10 alkyl, C1 to C10 hydroxyalkyl, C1 to C30 aminoalkyl, or C1 to C20 alkoxyalkyl, and X is a chemical bond or a C1 to C4 divalent organic radical, and X is a chemical bond or a C1 to C4 divalent organic radical, or c) at least two of R1, R2, R3, and R4 together form a saturated mono, bi or tricyclic C5 to C30 organic ring system and the remaining R3 and R4, if any, together form a monocyclic C5 to C30 organic ring system or are selected from a C1 to C10 alkyl, C1 to C10 hydroxyalkyl, C1 to C30 aminoalkyl, or C1 to C20 alkoxyalkyl, and X is a chemical bond or a C1 to C4 divalent organic radical, or d) a combination thereof, and wherein Z is a counter-ion and z is an integer, which is chosen so that the overall bulky quaternary ammonium compound is electrically uncharged.
Abstract:
AQUEOUS ALKALINE CLEANING COMPOSITION FREE FROM ORGANIC SOLVENTS AND METAL ION-FREE SILICATES, THE SAID COMPOSITIONS COMPRISING (A) A THIOAMINO ACID HAVING AT LEAST ONE PRIMARY AMINO GROUP AND AT LEAST ONE MERCAPTO GROUP, (B) A QUATERNARY AMMONIUM HYDROXIDE, (C) A CHELATING AND/OR CORROSION INHIBITING AGENT SELECTED FROM THE GROUP CONSISTING OF ALIPHATIC AND CYCLOALIPHATIC AMINES HAVING AT LEAST TWO PRIMARY AMINO GROUPS, AND ALIPHATIC AND CYCLOALIPHATIC AMINES HAVING AT LEAST ONE HYDROXY GROUP, (D) A NONIONIC SURFACTANT SELECTED FROM THE GROUP OF ACETYLENIC ALCOHOLS, ALKYLOXYLATED ACETYLENIC ALCOHOLS AND ALKYLOXYLATED SORBITAN MONOCARBOXYLIC ACID MONO ESTERS; THE USE OF THE ALKALINE CLEANING COMPOSITION FOR THE PROCESSING OF SUBSTRATES USEFUL FOR FABRICATING ELECTRICAL AND OPTICAL DEVICES; AND A METHOD FOR PROCESSING SUBSTRATES USEFUL FOR FABRICATING ELECTRICAL AND OPTICAL DEVICES MAKING USE OF THE SAID AQUEOUS ALKALINE CLEANING COMPOSITION.
Abstract:
A method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices, the said method comprising the steps of (1) providing a substrate having patterned material layers having line-space dimensions of 50 nm and less and aspect ratios of >2; (2) providing the surface of the patterned material layers with a positive or a negative electrical charge by contacting the substrate at least once with an aqueous, fluorine-free solution S containing at least one fluorine-free cationic surfactant A having at least one cationic or potentially cationic group, at least one fluorine-free anionic surfactant A having at least one anionic or potentially anionic group, or at least one fluorine-free amphoteric surfactant A; and (3) removing the aqueous, fluorine-free solution S from the contact with the substrate.
Abstract:
A liquid composition free from N-alkylpyrrolidones and hydroxyl amine and its derivatives, having a dynamic shear viscosity at 50°C of from 1 to 10 mPas as measured by rotational viscometry and comprising based on the complete weight of the composition, (A) of from 40 to 99.95% by weight of a polar organic solvent exhibiting in the presence of dissolved tetramethylammonium hydroxide (B) a constant removal rate at 50°C for a 30 nm thick polymeric barrier anti-reflective layer containing deep UV absorbing chromophoric groups, (B) of from 0.05 to
Abstract:
The present invention relates to a composition for post chemical-mechanical polishing (CMP) cleaning. The composition is alkaline, which can remove azole-type corrosion inhibitors on the wafer surface after CMP. This composition can effectively remove azole compounds, increase wettability of the Cu surface, and significantly improve the defect removal after CMP.
Abstract:
A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.
Abstract:
Aqueous alkaline composition free from organic solvents and metal ion-free silicates, the said compositions comprising (A) a thioamino acid having at least one primary amino group and at least one mercapto group, (B) a quaternary ammonium hydroxide, (C) a chelating and/or corrosion inhibiting agent selected from the group consisting of aliphatic and cycloaliphatic amines having at least two primary amino groups, and aliphatic and cycloaliphatic amines having at least one hydroxy group, (D) a nonionic surfactant selected from the group of acetylenic alcohols, alkyloxylated acetylenic alcohols and alkyloxylated sorbitan monocarboxylic acid mono esters; the use of the alkaline composition for the processing of substrates useful for fabricating electrical and optical devices; and a method for processing substrates useful for fabricating electrical and optical devices making use of the said aqueous alkaline composition.