公开(公告)号：US20190259906A1

公开(公告)日：2019-08-22

申请号：US16405240

申请日：2019-05-07

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Chih Chiu ,  Chih-Chiang Lu ,  Chun-Yu Lin ,  Ching-Huai Ni ,  Yi-Ming Chen ,  Tzu-Chieh Hsu ,  Ching-Pei Lin

IPC: H01L33/00 ,  H01L25/075 ,  H01L33/46 ,  H01L33/38 ,  H01L33/22 ,  H01L21/00 ,  H01L33/62

Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

公开(公告)号：US10367118B2

公开(公告)日：2019-07-30

申请号：US15266249

申请日：2016-09-15

Applicant: EPISTAR CORPORATION

Inventor： Yu-Ren Peng ,  Tzu-Chieh Hsu ,  Shih-I Chen ,  Rong-Ren Lee ,  Hsin-Chan Chung ,  Wen-Luh Liao ,  Yi-Chieh Lin

IPC: H01L33/10 ,  H01L33/12 ,  H01L33/42 ,  H01L33/38 ,  H01L33/46 ,  H01L33/30

Abstract: A light-emitting diode, comprises an active layer for emitting a light ray; an upper semiconductor stack on the active layer, wherein the upper semiconductor stack comprises a window layer; a reflector; and a lower semiconductor stack between the active layer and the reflector; wherein the thickness of the window layer is small than or equal to 3 μm, and the thickness of the lower semiconductor stack is small than or equal to 1 μm.

公开(公告)号：US10084115B2

公开(公告)日：2018-09-25

申请号：US15467679

申请日：2017-03-23

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu Lin ,  Yi-Ming Chen ,  Shih-Chang Lee ,  Yao-Ning Chan ,  Tzu-Chieh Hsu

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/22 ,  H01L33/40 ,  H01L33/06 ,  H01L33/42 ,  H01L33/44

CPC classification number: H01L33/387 ,  H01L33/06 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: The present disclosure provides an optoelectronic device comprising a semiconductor stack comprising a first side having a first length; a first contact layer on the semiconductor stack; and a second contact layer on the semiconductor stack opposite to the first contact layer, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; and wherein the second contact layer comprises multiple contact regions separated from each other and arranged in a two-dimensional array, wherein a first distance between the two adjacent contact regions is between 0.8% and 8% of the first length.

公开(公告)号：US20170194532A1

公开(公告)日：2017-07-06

申请号：US15467679

申请日：2017-03-23

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu LIN ,  Yi-Ming Chen ,  Shih-Chang LEE ,  Yao-Ning Chan ,  Tzu-Chieh Hsu

IPC: H01L33/38 ,  H01L33/44 ,  H01L33/06 ,  H01L33/42 ,  H01L33/22 ,  H01L33/40

CPC classification number: H01L33/387 ,  H01L33/06 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: The present disclosure provides an optoelectronic device comprising a semiconductor stack comprising a first side having a first length; a first contact layer on the semiconductor stack; and a second contact layer on the semiconductor stack opposite to the first contact layer, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; and wherein the second contact layer comprises multiple contact regions separated from each other and arranged in a two-dimensional array, wherein a first distance between the two adjacent contact regions is between 0.8% and 8% of the first length.

公开(公告)号：USD764421S1

公开(公告)日：2016-08-23

申请号：US29516238

申请日：2015-01-30

Applicant: EPISTAR CORPORATION

Designer： Hui-Fang Kao ,  Tzu-Chieh Hsu ,  Yao-Ning Chan ,  Yi-Ming Chen

公开(公告)号：US09385272B2

公开(公告)日：2016-07-05

申请号：US14852212

申请日：2015-09-11

Applicant: EPISTAR CORPORATION

Inventor： Shih-I Chen ,  Chia-Liang Hsu ,  Chien-Fu Huang ,  Tzu-Chieh Hsu

IPC: H01L33/00 ,  H01L33/10 ,  H01L33/38 ,  H01L33/42 ,  H01L33/40 ,  H01L33/22 ,  H01L33/44

CPC classification number: H01L33/10 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44

Abstract: An optoelectronic device comprises an optoelectronic system for emitting a light and a semiconductor layer on the optoelectronic system, wherein the semiconductor layer comprises a metal element of Ag and an atomic concentration of Ag in the semiconductor layer is larger than 1*1016 cm−3.

Abstract translation: 光电子器件包括用于在光电子系统上发射光和半导体层的光电子系统，其中半导体层包括Ag的金属元素，并且半导体层中的Ag的原子浓度大于1×1016cm-3。

公开(公告)号：US09136436B2

公开(公告)日：2015-09-15

申请号：US14489169

申请日：2014-09-17

Applicant: EPISTAR CORPORATION

Inventor： Kun-De Lin ,  Yao-Ning Chan ,  Yi-Ming Chen ,  Tzu-Chieh Hsu

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/42 ,  H01L33/40 ,  H01L33/22 ,  H01L33/44

CPC classification number: H01L33/10 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44

Abstract: An optoelectronic device comprises a semiconductor stack having a first surface, a contact layer having a first pattern on the first surface for ohmically contacting the semiconductor stack, a void in the semiconductor stack and surrounding the contact layer, and a mirror structure on the first surface and covering the contact layer, wherein the first surface has a first portion which is not covered by the contact layer and a second portion covered by the contact layer, and the first portion is rougher than the second portion.

Abstract translation: 光电子器件包括具有第一表面的半导体堆叠，在第一表面上具有欧姆接触半导体叠层的第一图案的接触层，半导体叠层中的空隙和围绕接触层的第一表面的反射镜结构 并且覆盖所述接触层，其中所述第一表面具有未被所述接触层覆盖的第一部分和被所述接触层覆盖的第二部分，并且所述第一部分比所述第二部分更粗糙。

公开(公告)号：US09087967B2

公开(公告)日：2015-07-21

申请号：US13856220

申请日：2013-04-03

Applicant: EPISTAR CORPORATION

Inventor： Shih-I Chen ,  Tsung-Xian Lee ,  Yi-Ming Chen ,  Wei-Yu Chen ,  Ching-Pei Lin ,  Min-Hsun Hsieh ,  Cheng-Nan Han ,  Tien-Yang Wang ,  Hsing-Chao Chen ,  Hsin-Mao Liu ,  Zong-Xi Chen ,  Tzu-Chieh Hsu ,  Chien-Fu Huang ,  Yu-Ren Peng

IPC: H01L33/00 ,  H01L33/50 ,  H01L33/44 ,  H01L25/075

CPC classification number: H01L33/502 ,  H01L25/0753 ,  H01L33/44 ,  H01L33/505 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting device of an embodiment of the present application comprises a substrate; a first semiconductor light-emitting structure formed on the substrate, wherein the first semiconductor light-emitting structure comprises a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type and a first active layer formed between the first semiconductor layer and the second semiconductor layer, wherein the first active layer is capable of emitting a first light having a first dominant wavelength; and a first thermal-sensitive layer formed on a path of the first light, wherein the first thermal-sensitive layer comprises a material characteristic which varies with a temperature change.

Abstract translation: 本申请的实施方式的发光装置包括：基板; 形成在所述基板上的第一半导体发光结构，其中所述第一半导体发光结构包括具有第一导电类型的第一半导体层，具有第二导电类型的第二半导体层和形成在所述第一半导体层之间的第一有源层 层和第二半导体层，其中第一有源层能够发射具有第一主波长的第一光; 以及形成在所述第一光的路径上的第一热敏层，其中所述第一热敏层包括随温度变化而变化的材料特性。

公开(公告)号：US20150137167A1

公开(公告)日：2015-05-21

申请号：US14589683

申请日：2015-01-05

Applicant: Epistar Corporation

Inventor： Tzu-Chieh Hsu ,  Ching-San Tao ,  Chen Ou ,  Min-Hsun Hsieh ,  Chao-Hsing Chen

IPC: H01L33/24 ,  H01L33/46 ,  H01L33/60

CPC classification number: H01L33/105 ,  H01L33/10 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42

Abstract: A light-emitting device, comprises a light-emitting stacked layer comprising a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer and comprising a first plurality of cavities; a first planarization layer formed on a first part of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and on a second part of the second conductivity type semiconductor layer, the first transparent conductive oxide layer including a first portion in contact with the first planarization layer and including a second portion in contact with the upper surface of the second conductivity type semiconductor layer; a first electrode formed on the first portion; and a first reflective metal layer formed between the first transparent conductive oxide layer and the first electrode.

Abstract translation: 一种发光器件，包括：包含第一导电类型半导体层的发光层叠层; 形成在所述第一导电型半导体层上的发光层; 以及形成在所述发光层上并且包括第一多个空腔的第二导电类型半导体层; 形成在所述第二导电类型半导体层的第一部分上的第一平坦化层; 第一透明导电氧化物层，其形成在所述第一平坦化层上和所述第二导电类型半导体层的第二部分上，所述第一透明导电氧化物层包括与所述第一平坦化层接触的第一部分， 第二导电型半导体层的上表面; 形成在所述第一部分上的第一电极; 以及形成在第一透明导电氧化物层和第一电极之间的第一反射金属层。

公开(公告)号：US11791436B2

公开(公告)日：2023-10-17

申请号：US17570206

申请日：2022-01-06

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Chih Chiu ,  Chih-Chiang Lu ,  Chun-Yu Lin ,  Ching-Huai Ni ,  Yi-Ming Chen ,  Tzu-Chieh Hsu ,  Ching-Pei Lin

IPC: H01L33/00 ,  H01L33/46 ,  H01L33/38 ,  H01L33/62 ,  H01L33/22 ,  H01L25/075 ,  H01L21/00

CPC classification number: H01L33/0025 ,  H01L21/00 ,  H01L25/0753 ,  H01L33/0062 ,  H01L33/0093 ,  H01L33/22 ,  H01L33/387 ,  H01L33/46 ,  H01L33/62 ,  H01L33/0095 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.