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    43.
    发明专利
    未知

    公开(公告)号：DE69938658D1

    公开(公告)日：2008-06-19

    申请号：DE69938658

    申请日：1999-09-10

    Applicant: ST MICROELECTRONICS SRL

    Inventor： ZERBINI SARAH ,  SASSOLINI SIMONE ,  VIGNA BENEDETTO

    IPC: B81B5/00 ,  B81B3/00 ,  G01C19/5684 ,  G01P15/00 ,  G01P15/08 ,  G01P15/125 ,  G01P15/135 ,  H01L29/84

    Abstract: A microelectromechanical structure (40) includes a rotor element (22) having a barycentric axis (G) and suspended regions (25) arranged a distance with respect to the barycentric axis. The rotor element (22) is supported and biased via a suspension structure (30, 45, 49) having a single anchoring portion (49) extending along the barycentric axis (G). The single anchoring portion (49; 73; 92) is integral with a body (41) of semiconductor material on which electric connections (50a) are formed.

    47.
    发明专利
    未知

    公开(公告)号：DE69726718D1

    公开(公告)日：2004-01-22

    申请号：DE69726718

    申请日：1997-07-31

    Applicant: ST MICROELECTRONICS SRL

    Inventor： FERRARI PAOLO ,  VIGNA BENEDETTO ,  MONTANINI PIETRO ,  FERRERA MARCO

    IPC: G01P9/04 ,  B81B3/00 ,  G01C19/56 ,  G01P15/08 ,  G01P15/125 ,  H01L21/762 ,  H01L21/764 ,  H01L41/08

    Abstract: To increase the sensitivity of the sensor, the movable mass (40) forming the seismic mass is formed starting from the epitaxial layer (13) and is covered by a weighting region of tungsten (26c) which has high density. To manufacture it, buried conductive regions (2) are formed in the substrate (1); then, at the same time, a sacrificial region is formed in the zone where the movable mass is to be formed and oxide insulating regions (9a-9d) are formed on the buried conductive regions (2) so as to cover them partially; the epitaxial layer (13) is then grown, using a nucleus region; a tungsten layer (26) is deposited and defined and, using a silicon carbide layer (31) as mask, the suspended structure (40) is defined; finally the sacrificial region is removed, forming an air gap (38).

    49.
    发明专利
    未知

    公开(公告)号：DE69627645D1

    公开(公告)日：2003-05-28

    申请号：DE69627645

    申请日：1996-07-31

    Applicant: ST MICROELECTRONICS SRL

    Inventor： VIGNA BENEDETTO ,  FERRARI PAOLO ,  VILLA FLAVIO

    IPC: G01L9/06 ,  B81B3/00 ,  B81C1/00 ,  G01L9/00 ,  H01L29/84

    Abstract: The pressure sensor is integrated in a SOI (Silicon-on-Insulator) substrate using the insulating layer as a sacrificial layer, which is partly removed by chemical etching to form the diaphragm. To fabricate the sensor, after forming the piezoresistive elements (10) and the electronic components (4, 6-8) integrated in the same chip, trenches (26) are formed in the upper wafer (23) of the substrate and extending from the surface to the layer of insulating material (22); the layer of insulating material (22) is chemically etched through the trenches (26) to form an opening (31) beneath the diaphragm (27); and a dielectric layer (25) is deposited to outwardly close the trenches (26) and the opening (31). Thus, the process is greatly simplified, and numerous packaging problems eliminated.

    50.
    发明专利
    未知

    公开(公告)号：DE69617674T2

    公开(公告)日：2002-08-08

    申请号：DE69617674

    申请日：1996-09-10

    Applicant: ST MICROELECTRONICS SRL

    Inventor： VIGNA BENEDETTO ,  FERRARI PAOLO ,  MASTROMATTEO UBALDO

    IPC: G01P15/125 ,  B81B3/00 ,  B81C1/00 ,  G01P15/11 ,  H01L29/84 ,  G01P1/00

    Abstract: An acceleration sensor is described which is formed by planar technology on a substrate (10). It includes a core (11) of ferromagnetic material and, coupled conductively together by the core, a first winding (13) adapted to be connected to a power supply (14) and a second winding (15) adapted to be connected to circuit means (16) for measuring an electrical magnitude induced therein. The core (11) has two suspended portions which are free to bend as a result of an inertial force due to an accelerative movement of the sensor itself. The bending causes lengthening of the core (11) and hence a variation in the reluctance of the magnetic circuit. If a constant current is supplied to the first winding (13), a voltage is induced in the second winding (15) as a result of the variation in the magnetic flux caused by the variation in reluctance.

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