公开(公告)号：EP1711961A2

公开(公告)日：2006-10-18

申请号：EP05704921.5

申请日：2005-01-03

Applicant: Microfabrica Inc.

Inventor： KUMAR, Ananda, H. ,  COHEN, Adam, L. ,  LOCKARD, Michael, S.

IPC: H01L21/4763

CPC classification number: C25D5/48 ,  B33Y10/00 ,  B81C1/00492 ,  B81C99/0065 ,  B81C2201/0104 ,  B81C2201/0197 ,  C25D1/00 ,  C25D1/003 ,  C25D5/022 ,  C25D5/10 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76885 ,  Y10T156/1052

Abstract: Some embodiments of the present invention provide processes and apparatus for electrochemically fabricating multilayer structures (98) (e.g. mesoscale or microscale structures) with improved endpoint detection and parallelism maintenance for materials (e.g. layers) that are planarized during the electrochemical fabrication process. Some methods involve the use of a fixture during planarization that ensures that planarized planes of material are parallel to other deposited planes within a given tolerance. Some methods involve the use of an endpoint detection fixture (292, 294, 296, 298) that ensures precise heights of deposited materials relative to an initial surface of a substrate (82), relative to a first deposited layer, or relative to some other layer formed during the fabrication process. In some embodiments planarization may occur via lapping while other embodiments may use a diamond fly cutting machine (408).

公开(公告)号：EP3095757A1

公开(公告)日：2016-11-23

申请号：EP16169401.3

申请日：2016-05-12

Applicant: ams International AG

Inventor： Daamen, Roel ,  Bouman, Hendrik ,  Vijayakumar, Kailash

IPC: B81C1/00 ,  H01L23/64

CPC classification number: B81C1/00825 ,  B81B7/0016 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2207/015 ,  B81B2207/03 ,  B81C2201/0104 ,  B81C2201/0146 ,  B81C2203/0735 ,  H01L23/642

Abstract: One example discloses a chip, comprising: a substrate (102, 202, 302, 602, 802); a first side of a passivation layer (206, 604, 804) coupled to the substrate (102, 202, 302, 602, 802); a device, having a device height and a cavity, wherein a first device surface is coupled to a second side of the passivation layer (206, 604, 804) which is opposite to the first side of the passivation layer (206, 604, 804); and a set of structures (108, 110, 214, 306, 410, 502, 504, 612, 614, 702, 812) coupled to the second side of the passivation layer (206, 604, 804) and configured to have a structure height greater than or equal to the device height.

Abstract translation: 一个例子公开了一种芯片，包括：衬底（102,202,302,602,802）; 耦合到所述衬底（102,202,302,602,802）的钝化层（206,604,804）的第一侧; 具有器件高度和空腔的器件，其中第一器件表面耦合到钝化层（206,604,804）的与钝化层（206,604,804）的第一侧相对的第二侧 ）; 以及耦合到钝化层（206,604,804）的第二侧的一组结构（108,110,214,306,410,502,504,612,614,702,812），并且被配置为具有结构 高度大于或等于设备高度。

公开(公告)号：EP2697156B1

公开(公告)日：2015-07-29

申请号：EP12716951.4

申请日：2012-04-13

Applicant: Robert Bosch GmbH

Inventor： GRAHAM, Andrew, B. ,  YAMA, Gary ,  O'BRIEN, Gary

IPC: B81C1/00

CPC classification number: B81C1/00103 ,  B81B2203/0376 ,  B81C2201/0104

公开(公告)号：EP1997772A3

公开(公告)日：2011-01-26

申请号：EP08075598.6

申请日：2002-05-16

Applicant: Micronit Microfluidics B.V.

Inventor： Schlautmann, Stefan ,  Gardeniers, Johannes Gerardus Elisabeth ,  Van den Berg, Albert

IPC: B81B1/00 ,  B81C1/00

CPC classification number: B81C1/00119 ,  B01L3/502707 ,  B01L2200/10 ,  B01L2300/0874 ,  B01L2300/0883 ,  B01L2300/0887 ,  B01L2400/0418 ,  B81B2201/0214 ,  B81B2201/058 ,  B81B2203/0338 ,  B81C2201/0104 ,  G01N33/48707 ,  Y10T137/2191

Abstract: The invention relates to a microfluidic device comprising: a substrate provided with a fluid channel; a plurality of electro osmotic flow drive sections for providing electro osmotic flow in the channel, each drive section comprising electric field electrodes, exposed to the channel, and one or more gate electrodes, separated from the channel by an insulating layer, and control means connected to said electrodes of each drive section so as to control the direction of the electro osmotic flow in the channel.

Abstract translation: 本发明涉及一种制造微流体装置的方法，该微流体装置包括设置有流体通道的至少两个基板，包括以下步骤：a）至少蚀刻第一和/或第二基板中的通道和一个或多个流体端口 ; b）在第二基板的表面上沉积第一层; c）根据预定几何部分去除第一层; d）在第一层和衬底表面的顶部上沉积第二层; e）平面化第二层以平滑其上表面; f）对准所述第一和第二基板; g）将第一衬底接合在第二衬底的平坦化的第二层上。

公开(公告)号：EP1441976A2

公开(公告)日：2004-08-04

申请号：EP02772043.2

申请日：2002-09-05

Applicant: ROBERT BOSCH GMBH

Inventor： LAERMER, Franz

IPC: B81B3/00

CPC classification number: G01C19/5712 ,  B81B3/0086 ,  B81B2201/0242 ,  B81B2203/0136 ,  B81B2203/033 ,  B81C1/00801 ,  B81C2201/0104 ,  B81C2201/016

Abstract: The invention concerns a micromechanical component comprising a substrate (17) whereon is deposited a micromechanical functional layer (15) made of a first material. The invention is characterized in that the functional layer (15) includes first and second zones (15a, 15c) which are linked by a third zone (15b; 220a,b; 320a,b; 420a-d; 520; 520a-h) made of a second material (20). At least one of the zones (15a or 15b; 220a,b; 320a,b; 420a-d; 520; 520a-h or 15c) forms part of a mobile structure (32) which is suspended above the substrate (17). The invention also concerns a method for producing such a micromechanical component.

Abstract translation: 本发明涉及一种包括基底（17）的微机械构件，其上沉积由第一材料制成的微机械功能层（15）。 本发明的特征在于功能层（15）包括由第三区域（15b; 220a，b; 320a，b; 420a-d; 520; 520a-h）连接的第一和第二区域（15a，15c） 由第二材料（20）制成。 至少一个区域（15a或15b; 220a，b; 320a，b; 420a-d; 520; 520a-h或15c）形成悬挂在衬底（17）上方的移动结构（32）的一部分。 本发明还涉及用于制造这种微机械部件的方法。

公开(公告)号：EP1362827A1

公开(公告)日：2003-11-19

申请号：EP02076937.8

申请日：2002-05-16

Applicant: Micronit Microfluidics B.V.

Inventor： Schlautmann, Stefan ,  Gardeniers, Johannes Gerardus Elisabeth ,  Van den Berg, Albert

IPC: B81B1/00 ,  B81C1/00

CPC classification number: B81C1/00119 ,  B01L3/502707 ,  B01L2200/10 ,  B01L2300/0874 ,  B01L2300/0883 ,  B01L2300/0887 ,  B01L2400/0418 ,  B81B2201/0214 ,  B81B2201/058 ,  B81B2203/0338 ,  B81C2201/0104 ,  G01N33/48707 ,  Y10T137/2191

Abstract: The present invention relates to a method of fabricating a microfluidic device including at least two substrates provided with a fluid channel, comprising the steps of:

a) etching at least a channel and one or more fluid ports in a first and/or a second substrate;
b) depositing a first layer on a surface of the second substrate;
c) partially removing the first layer in accordance with a predefined geometry;
d) depositing a second layer on top of the first layer and the substrate surface;
e) planarizing the second layer so as to smooth the upper surface thereof;
f) aligning the first and second substrate;
g) bonding the first substrate on the planarized second layer of the second substrate.

Abstract translation: 本发明涉及一种制造微流体装置的方法，该微流体装置包括设置有流体通道的至少两个基板，包括以下步骤：a）至少蚀刻第一和/或第二基板中的通道和一个或多个流体端口 ; b）在第二基板的表面上沉积第一层; c）根据预定几何部分去除第一层; d）在第一层和衬底表面的顶部上沉积第二层; e）平面化第二层以平滑其上表面; f）对准所述第一和第二基板; g）将第一衬底接合在第二衬底的平坦化的第二层上。

公开(公告)号：EP0427930A3

公开(公告)日：1992-05-13

申请号：EP90116543.1

申请日：1990-08-29

Applicant: International Business Machines Corporation

Inventor： Bassous, Ernest ,  Blum, Joseph M. ,  Chan, Kevin K. ,  Lamberti, Angela C.

IPC: G03F1/14

CPC classification number: B81C1/00158 ,  B81C2201/0104 ,  B81C2201/0136 ,  B81C2201/053 ,  B81C2203/019 ,  G01L9/0042 ,  G03F1/22 ,  Y10S438/977

Abstract: The method of fabrication of a monolithic silicon membrane structure in which the membrane and its supporting framework are constructed from a single ultra thick body of silicon. The fabrication sequence includes the steps of providing a doped membrane layer on the silicon body, forming an apertured mask on the silicon body, and removal of an unwanted silicon region by mechanical grinding and chemical etching to provide a well opening in the silicon body terminating in the doped membrane.

公开(公告)号：US20170349431A1

公开(公告)日：2017-12-07

申请号：US15623267

申请日：2017-06-14

Applicant: Memjet Technology Ltd.

Inventor： Angus North ,  Ronan O'Reilly ,  Gregory McAvoy

IPC: B81C1/00 ,  B41J2/16

CPC classification number: B81C1/00611 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1645 ,  B81B2201/052 ,  B81B2203/0353 ,  B81C2201/0104 ,  B81C2201/0121

Abstract: A process for filling one or more etched holes defined in a frontside surface of a wafer substrate. The process includes the steps of: (i) depositing a layer of a photoimageable thermoplastic polymer onto the frontside surface and into each hole; (ii) reflowing the polymer; (iii) selectively removing the polymer from regions outside a periphery of each hole, the selective removing comprising exposure and development of the polymer; (iv) optionally repeating steps (i) to (iii) until each hole is overfilled with the polymer; and (v) planarizing the frontside surface to provide one or more holes filled with a plug of the polymer. Each plug has a respective upper surface coplanar with the frontside surface.

公开(公告)号：US20170256330A1

公开(公告)日：2017-09-07

申请号：US15363950

申请日：2016-11-29

Applicant: Alcorix Co.

Inventor： Nicolaie A. Moldovan

IPC: G21K1/06 ,  B24B37/04 ,  C23C16/04 ,  B24B7/22 ,  C23C16/455 ,  C23C16/02

CPC classification number: B24B37/042 ,  B24B7/228 ,  B81C2201/0104 ,  C23C14/042 ,  C23C16/0227 ,  C23C16/042 ,  C23C16/045 ,  C23C16/06 ,  C23C16/342 ,  C23C16/45529 ,  C23C16/45555 ,  G21K1/06 ,  G21K2201/067 ,  H01L21/02065 ,  H01L21/32115 ,  H01L21/7684 ,  H01L51/0011 ,  Y10S148/05

Abstract: A method for fabrication of diffractive optics by batch processing is disclosed, having applicability to high resolution ultra-high aspect ratio Fresnel Zone Plates for focusing of X-rays or gamma-rays having energies up to hundreds of keV. An array of precursor forms is etched into a planar substrate. Sidewalls of the forms are smoothed to a required surface roughness. A sequence of alternating layers of different complex refractive index, for binary or higher order diffractive optics, are deposited on the precursor forms by atomic layer deposition (ALD), to provide diffractive line patterns. Thinnest layers may have nanometer thicknesses. After front surface planarization and thinning of the substrate to expose first and second surfaces of the diffractive line patterns of the diffractive optic, the height h in the propagation direction provides a designed absorption difference and/or phase shift difference between adjacent diffractive lines. Optionally, post-processing enhances mechanical, thermal, electrical and optical properties.

公开(公告)号：US09556015B1

公开(公告)日：2017-01-31

申请号：US14925867

申请日：2015-10-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tsai-Hao Hung ,  Shih-Chi Kuo ,  Tsung-Hsien Lee ,  Tao-Cheng Liu

IPC: H01L21/00 ,  B81B1/00 ,  B81C1/00

CPC classification number: B81B1/004 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0163 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2207/012 ,  B81C1/00087 ,  B81C1/00619 ,  B81C2201/0104 ,  B81C2201/0108 ,  B81C2201/0132 ,  B81C2203/0118

Abstract: The present disclosure provides a substrate structure for a micro electro mechanical system (MEMS) device. The substrate structure includes a cap and a micro electro mechanical system (MEMS) substrate. The cap has a cavity, and the MEMS substrate is disposed on the cap. The MEMS substrate has a plurality of through holes exposing the cavity, and an aspect ratio of the through hole is greater than 30.

Abstract translation: 本公开提供了一种用于微机电系统（MEMS）装置的衬底结构。 衬底结构包括帽和微机电系统（MEMS）衬底。 盖具有空腔，并且MEMS基板设置在盖上。 MEMS基板具有暴露空腔的多个通孔，并且通孔的纵横比大于30。