Abstract:
PURPOSE: A method for forming a metal line pattern by using selective electroless plating on a flexible substrate is provided to plate metal through an electroless plating by making selectively catalyst absorbed to a self-assembled monolayer through an inkjet printing. CONSTITUTION: A method for forming a metal line pattern by using selective electroless plating on a flexible substrate is comprised of the steps: forming a pattern of the self-assembled monolayer on a substrate base by an inkjet printing; making a catalyst particle absorbed to the self-assembled monolayer which is patterned in forming the self-assembled monolayer; and forming a metal pattern on the absorbed catalyst particle through an electroless plating.
Abstract:
An organic thin film transistor, manufacturing method thereof, and organic semiconductor device including the same are provided to improve device property and manufacturing process of thin film transistor by forming gate electrode of thin film transistor using nano crystalline conductive carbon layer. A flexible substrate is prepared. A nano crystalline carbon layer(310) is deposited on the flexible substrate as a gate electrode. An organic insulation layer(320) is formed on the flexible substrate on which the gate electrode is deposited. An organic active layer is activated on the organic insulation layer. Source/drain electrodes are formed on the organic active layer. The nano crystalline carbon layer is deposited using an asymmetry magnetron sputtering method. The organic insulation layer is formed by one among polyvinyl phenol and polyvinyl alcohol.
Abstract:
An organic semiconductor device comprising organic-inorganic nano-composite dielectric layer is provided to realize excellent flexibility, low leakage current, high dielectric constant by using the organic-inorganic nano complex insulating layer. In an organic semiconductor device, a seed layer(30) is formed at the upper part of the substrate(10). A gate electrode(50) is formed on the seed layer. An organic-inorganic nano complex insulating layer(60) is formed on the substrate in which the gate electrode is formed. An organic semiconductor layer(70) is formed on the dielectric layer, and a source/drain electrode layer(80) is formed. The inorganic oxide dispersion solution is manufactured by mixing the inorganic oxide nano particle with the acid solvent and coupling agent. An organic-inorganic oxides nano composite solution is manufactured by mixing the inorganic oxide dispersion solution with the organic compound insulator. The organic-inorganic oxide cargo nano composite solution is coated on substrate.
Abstract:
A method for fabricating a transparent organic/inorganic multi barrier coating layers is provided to expand a life span of a device by blocking moisture and oxygen with an encapsulation thin film. A method for fabricating a transparent organic/inorganic multi barrier coating layers includes the steps of: forming an organic layer(30a) on a transparent substrate through a plasma polymerization method using a CCP(Capacitively Coupled Plasma); and forming an inorganic layer(40a) on the organic layer through the plasma polymerization method using the CCP. The substrate is PEN(Polyethylene-2,6-naphthalate). The organic layer is formed by using methylcyclohexane. The inorganic layer is formed using hexamethyldisiloxane. The organic layer is formed by using an organic precursor which forms a transparent polymer. The inorganic layer is formed by using an inorganic metallic precursor having a silicon element which forms the transparent polymer.