公开(公告)号：DE10136400B4

公开(公告)日：2006-01-05

申请号：DE10136400

申请日：2001-07-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SELL BERNHARD ,  SAENGER ANNETTE ,  GUTSCHE MARTIN ,  SEIDL HARALD ,  MOLL PETER

IPC: C23C16/32 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  H01L21/285 ,  H01L21/8242

Abstract: At least a partial layer of an upper capacitor electrode is formed by metal carbide, preferably by a transition metal carbide. In one embodiment, the metal carbide layer is formed by depositing an alternating sequence of metal-containing layers and carbon-containing layers on top of one another and then subjecting them to a heat treatment, in such a manner that they mix with one another. The patterning of the layer sequence can be carried out before the carbide formation step.

公开(公告)号：DE102004030138A1

公开(公告)日：2005-12-08

申请号：DE102004030138

申请日：2004-06-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PRECHTL GERHARD ,  GUTSCHE MARTIN ,  KERSCH ALFRED ,  SPITZER ANDREAS

IPC: C23C16/448 ,  C23C16/455 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768

Abstract: An arrangement for atomic layer deposition starting from precursor compounds, comprises a reactor chamber (201) with a substrate holder and a heater. A pump (205) is used to supply a vacuum in the reaction chamber, and the precursor compound container is connected to the chamber. The pump is located between the container and the reactor chamber. The arrangement has a carrier gas source, a gas chamber and a flushing gas source.

公开(公告)号：DE10345394A1

公开(公告)日：2005-05-19

申请号：DE10345394

申请日：2003-09-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KREUPL FRANZ ,  GUTSCHE MARTIN

IPC: H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8242 ,  B82B3/00

公开(公告)号：DE10344039A1

公开(公告)日：2005-04-14

申请号：DE10344039

申请日：2003-09-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： REISINGER HANS ,  GUTSCHE MARTIN ,  SEIDL HARALD ,  GORDON ROY

IPC: H01L21/28 ,  H01L27/115 ,  H01L29/51 ,  H01L29/792

Abstract: An electrically programmable non-volatile memory based on threshold-changing MOSFETs comprises a charge-storing layer made from a compound of the formula: HfO xN y. An independent claim is also included for the production of an electrically programmable non-volatile memory based on threshold-changing MOSFETs.

公开(公告)号：DE10336876A1

公开(公告)日：2005-03-17

申请号：DE10336876

申请日：2003-08-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PINNOW CAY-UWE ,  GUTSCHE MARTIN ,  SYMANCZYK RALF DR ,  WILLER JOSEF

IPC: H01L21/28 ,  H01L21/336 ,  H01L21/8239 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/105 ,  H01L27/115 ,  H01L29/423 ,  H01L29/76

Abstract: Memory cell comprises a storage layer (6) formed by a material of a gate dielectric (4) and containing nano-crystals or nano-dots. An independent claim is also included for a process for the production of a memory cell.

公开(公告)号：DE10248980B4

公开(公告)日：2004-11-11

申请号：DE10248980

申请日：2002-10-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SEIDL HARALD ,  GUTSCHE MARTIN

IPC: C23C16/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/316 ,  H01L21/334 ,  H01L21/8242 ,  H01L21/28

Abstract: Production of structured silicon dioxide layers on process surfaces arranged perpendicular or slanted towards a substrate surface comprises preparing a substrate (4) with a relief in a process chamber, forming a starter layer (17) with leaving groups substituted by hydroxyl groups on sections of the process surfaces which extend from the substrate surface up to a determined covering depth of the relief, and applying tris(tert.-butoxy)silanol to the substrate so that a silicon dioxide layer (18) is selectively grown on the starter layer.

公开(公告)号：DE10216614B4

公开(公告)日：2004-06-17

申请号：DE10216614

申请日：2002-04-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HECHT THOMAS ,  BIRNER ALBERT ,  SEIDL HARALD ,  SCHROEDER UWE ,  JAKSCHIK STEFAN ,  GUTSCHE MARTIN

IPC: C25D11/02 ,  C25D11/32 ,  H01L21/316 ,  H01L21/8242 ,  H01L21/318 ,  H01L21/3105 ,  H01L27/108

Abstract: Production of a thin dielectric layer (2) on a conducting substrate (1) comprises applying a thin dielectric layer on the substrate, placing in an electrochemical cell (5) filled with an electrolyte (9) and having two electrodes (6, 7), connecting the substrate with the first electrode and the second electrode with the electrolyte, and applying an electrical potential between the electrodes. The current flow between the electrolyte and substrate is controlled in an electrochemical process and is adjusted by the dielectric layer, preferably in the region of defect sites. An Independent claim is also included for an arrangement of a substrate and a dielectric layer.

公开(公告)号：DE10219123B4

公开(公告)日：2004-06-03

申请号：DE10219123

申请日：2002-04-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SEIDL HARALD ,  GUTSCHE MARTIN ,  HECHT THOMAS ,  JAKSCHIK STEFAN ,  KUDELKA STEPHAN ,  SCHROEDER UWE ,  SCHMEIDE MATTHIAS

IPC: H01L21/311 ,  H01L21/8242 ,  H01L21/8239

Abstract: Process for structuring ceramic layers on semiconductor substrates comprises depositing a ceramic layer on a semiconductor substrate, sealing the deposited ceramic layer, forming impurity sites in sections, and treating the ceramic layer with an etching medium, in which the ceramic layer is removed from the substrate in the sections provided with the impurity sites.

公开(公告)号：DE10219123A1

公开(公告)日：2003-11-13

申请号：DE10219123

申请日：2002-04-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SEIDL HARALD ,  GUTSCHE MARTIN ,  HECHT THOMAS ,  JAKSCHIK STEFAN ,  KUDELKA STEPHAN ,  SCHROEDER UWE ,  SCHMEIDE MATTHIAS

IPC: H01L21/311 ,  H01L21/8242 ,  H01L21/8239

Abstract: Process for structuring ceramic layers on semiconductor substrates comprises depositing a ceramic layer on a semiconductor substrate, sealing the deposited ceramic layer, forming impurity sites in sections, and treating the ceramic layer with an etching medium, in which the ceramic layer is removed from the substrate in the sections provided with the impurity sites.

公开(公告)号：DE10164741A1

公开(公告)日：2003-06-26

申请号：DE10164741

申请日：2001-06-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SELL BERNHARD ,  SAENGER ANNETTE ,  GUTSCHE MARTIN ,  SEIDL HARALD

IPC: C23C14/58 ,  C23C16/56 ,  H01L21/20 ,  H01L21/302 ,  H01L21/3205 ,  H01L21/334 ,  H01L21/44 ,  H01L21/461 ,  H01L21/8242 ,  H01L29/94