52.
    发明专利
    未知

    公开(公告)号:DE10208786B4

    公开(公告)日:2006-02-09

    申请号:DE10208786

    申请日:2002-02-28

    Abstract: Amplification of structurized resist uses chemical amplification photoresist (CAR) containing film-forming polymer (I) with acid-labile groups releasing groups that increase solubility in aqueous alkaline developer and anchor groups for coupling with amplification agent (II) containing reactive groups, photoacid and solvent for (I). The structurized CAR is amplified by applying (II) as liquid phase in solvent, then washed with water. Amplification of a structurized resist uses a chemical amplification photoresist (CAR) to a substrate, in which the CAR contains a film-forming polymer (I) with acid-labile groups releasing groups that increase its solubility in aqueous alkaline developers and also (protected) anchor groups for coupling with amplification agent (II), a photoacid (III) and a solvent (IV) for (I). This is applied to a substrate, dried to form resist film, exposed selectively to release acid from (III) in the exposed sections; heated to remove the acid-labile groups from (I) and release polar groups, giving a contrasted resist with polar and unpolar sections; and developed with an alkaline developer, which has higher polarity than (IV) and does not dissolve (I), so that the polar sections are removed. The structurized resist is then treated with (II), which has reactive group(s) that can react with the reactive anchor groups of (I), as liquid phase in solvent(s) in which (I) is insoluble and leaving the (II) solution on the structurized resist so that it couples with (I) to give an amplified resist; then washed with a medium containing water as solvent to remove excess (II).

    55.
    发明专利
    未知

    公开(公告)号:DE10219122B4

    公开(公告)日:2005-01-05

    申请号:DE10219122

    申请日:2002-04-29

    Abstract: In a process for producing hard masks, an initiator layer that contains an initiator component is applied to a substrate. Then, a photoresist is used to produce a pattern on the initiator layer, in the trenches of which pattern the initiator layer is uncovered. Then, a curable hard mask material is applied and selectively cured, so that only those sections of the hard mask material that adjoin the initiator layer are cured. Finally, uncured hard mask material is removed using a solvent, and at the same time the lands formed from the resist are also removed. The pattern obtained in this way can then be transferred to the substrate, for example using plasma.

    Chemical amplification of photoresist, used as mask in microchip manufacture, uses resist based on polymer with acid-labile groups and anchor groups, liquid medium in coupling with amplification agent and water for final wash

    公开(公告)号:DE10208786A1

    公开(公告)日:2003-10-09

    申请号:DE10208786

    申请日:2002-02-28

    Abstract: Amplification of structurized resist uses chemical amplification photoresist (CAR) containing film-forming polymer (I) with acid-labile groups releasing groups that increase solubility in aqueous alkaline developer and anchor groups for coupling with amplification agent (II) containing reactive groups, photoacid and solvent for (I). The structurized CAR is amplified by applying (II) as liquid phase in solvent, then washed with water. Amplification of a structurized resist uses a chemical amplification photoresist (CAR) to a substrate, in which the CAR contains a film-forming polymer (I) with acid-labile groups releasing groups that increase its solubility in aqueous alkaline developers and also (protected) anchor groups for coupling with amplification agent (II), a photoacid (III) and a solvent (IV) for (I). This is applied to a substrate, dried to form resist film, exposed selectively to release acid from (III) in the exposed sections; heated to remove the acid-labile groups from (I) and release polar groups, giving a contrasted resist with polar and unpolar sections; and developed with an alkaline developer, which has higher polarity than (IV) and does not dissolve (I), so that the polar sections are removed. The structurized resist is then treated with (II), which has reactive group(s) that can react with the reactive anchor groups of (I), as liquid phase in solvent(s) in which (I) is insoluble and leaving the (II) solution on the structurized resist so that it couples with (I) to give an amplified resist; then washed with a medium containing water as solvent to remove excess (II).

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