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公开(公告)号:DE102004040504A1
公开(公告)日:2006-03-02
申请号:DE102004040504
申请日:2004-08-20
Applicant: INFINEON TECHNOLOGIES AG
Inventor: KLAUK HAGEN , ELIAN KLAUS , HOHLE CHRISTOPH , SEBALD MICHAEL , ZSCHIESCHANG UTE , HALIK MARCUS , SCHMID GUENTER
Abstract: Between first (14) and second contact (18) is located test material region (16) as assembly (16') of numerous molecules (16-1). Measuring probe in scanning region (18a) of second contact can be contacted mechanically and electrically. For mechanical relief, electrically insulating buffer region is so fitted on surface region (14a) of first contact with recess that scanning region is laterally spaced from recess region, in which exclusively testing material region provides direct mechanical contact between first and second contacts (14,18).
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公开(公告)号:DE10208786B4
公开(公告)日:2006-02-09
申请号:DE10208786
申请日:2002-02-28
Applicant: INFINEON TECHNOLOGIES AG
Inventor: YIP SIEW SIEW , ROTTSTEGGE JOERG , RICHTER ERNST , FALK GERTRUD , SEBALD MICHAEL , SEIBOLD KERSTIN , KERN MARION
IPC: G03F7/40
Abstract: Amplification of structurized resist uses chemical amplification photoresist (CAR) containing film-forming polymer (I) with acid-labile groups releasing groups that increase solubility in aqueous alkaline developer and anchor groups for coupling with amplification agent (II) containing reactive groups, photoacid and solvent for (I). The structurized CAR is amplified by applying (II) as liquid phase in solvent, then washed with water. Amplification of a structurized resist uses a chemical amplification photoresist (CAR) to a substrate, in which the CAR contains a film-forming polymer (I) with acid-labile groups releasing groups that increase its solubility in aqueous alkaline developers and also (protected) anchor groups for coupling with amplification agent (II), a photoacid (III) and a solvent (IV) for (I). This is applied to a substrate, dried to form resist film, exposed selectively to release acid from (III) in the exposed sections; heated to remove the acid-labile groups from (I) and release polar groups, giving a contrasted resist with polar and unpolar sections; and developed with an alkaline developer, which has higher polarity than (IV) and does not dissolve (I), so that the polar sections are removed. The structurized resist is then treated with (II), which has reactive group(s) that can react with the reactive anchor groups of (I), as liquid phase in solvent(s) in which (I) is insoluble and leaving the (II) solution on the structurized resist so that it couples with (I) to give an amplified resist; then washed with a medium containing water as solvent to remove excess (II).
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公开(公告)号:DE10135246B4
公开(公告)日:2005-10-20
申请号:DE10135246
申请日:2001-07-19
Applicant: INFINEON TECHNOLOGIES AG
Inventor: ESCHBAUMER CHRISTIAN , HOHLE CHRISTOPH , SEBALD MICHAEL , ROTTSTEGGE JOERG
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公开(公告)号:DE10350686A1
公开(公告)日:2005-06-16
申请号:DE10350686
申请日:2003-10-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor: HERBST WALTRAUD , KRAGLER KARL , SEBALD MICHAEL
Abstract: The outgassing products, which are formed when photoresist systems, are exposed to laser radiation are verified by a mass spectrometer connected to the irradiation chamber.
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公开(公告)号:DE10219122B4
公开(公告)日:2005-01-05
申请号:DE10219122
申请日:2002-04-29
Applicant: INFINEON TECHNOLOGIES AG
Inventor: SEBALD MICHAEL , RICHTER ERNST-CHRISTIAN
IPC: H01L21/027 , H01L21/308 , H01L21/311 , H01L21/3213 , H01L21/31
Abstract: In a process for producing hard masks, an initiator layer that contains an initiator component is applied to a substrate. Then, a photoresist is used to produce a pattern on the initiator layer, in the trenches of which pattern the initiator layer is uncovered. Then, a curable hard mask material is applied and selectively cured, so that only those sections of the hard mask material that adjoin the initiator layer are cured. Finally, uncured hard mask material is removed using a solvent, and at the same time the lands formed from the resist are also removed. The pattern obtained in this way can then be transferred to the substrate, for example using plasma.
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公开(公告)号:DE10208786A1
公开(公告)日:2003-10-09
申请号:DE10208786
申请日:2002-02-28
Applicant: INFINEON TECHNOLOGIES AG
Inventor: YIP SIEW SIEW , ROTTSTEGGE JOERG , RICHTER ERNST , FALK GERTRUD , SEBALD MICHAEL , SEIBOLD KERSTIN , KERN MARION
IPC: G03F7/40
Abstract: Amplification of structurized resist uses chemical amplification photoresist (CAR) containing film-forming polymer (I) with acid-labile groups releasing groups that increase solubility in aqueous alkaline developer and anchor groups for coupling with amplification agent (II) containing reactive groups, photoacid and solvent for (I). The structurized CAR is amplified by applying (II) as liquid phase in solvent, then washed with water. Amplification of a structurized resist uses a chemical amplification photoresist (CAR) to a substrate, in which the CAR contains a film-forming polymer (I) with acid-labile groups releasing groups that increase its solubility in aqueous alkaline developers and also (protected) anchor groups for coupling with amplification agent (II), a photoacid (III) and a solvent (IV) for (I). This is applied to a substrate, dried to form resist film, exposed selectively to release acid from (III) in the exposed sections; heated to remove the acid-labile groups from (I) and release polar groups, giving a contrasted resist with polar and unpolar sections; and developed with an alkaline developer, which has higher polarity than (IV) and does not dissolve (I), so that the polar sections are removed. The structurized resist is then treated with (II), which has reactive group(s) that can react with the reactive anchor groups of (I), as liquid phase in solvent(s) in which (I) is insoluble and leaving the (II) solution on the structurized resist so that it couples with (I) to give an amplified resist; then washed with a medium containing water as solvent to remove excess (II).
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公开(公告)号:DE10137099A1
公开(公告)日:2003-02-27
申请号:DE10137099
申请日:2001-07-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor: HOHLE CHRISTOPH , ROTTSTEGGE JOERG , ESCHBAUMER CHRISTIAN , SEBALD MICHAEL
Abstract: Chemically-enhanced photo-resist (I) comprising polymer, photo-acid former and solvent, in which the polymer contains at least mono-fluorinated acid-labile residues attached to a polar group so that the solubility of the polymer in polar developers is increased after cleavage of the acid-labile residues. An Independent claim is also included for a method for structuring substrates by coating the substrate with (I), exposing parts of the resulting photo-resist film to light with a wavelength of less than 200 nm and developing the exposed film to form a structure which is transferred to the substrate.
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公开(公告)号:DE10106861C1
公开(公告)日:2003-02-06
申请号:DE10106861
申请日:2001-02-14
Applicant: INFINEON TECHNOLOGIES AG
Inventor: SEBALD MICHAEL
Abstract: Production of fine resist structures in a photoresist layer (2) during the manufacture of microelectronic components comprises applying a photoresist layer; applying a first mask (1) having a first structure (5) transparent for a first wavelength ( lambda 1); irradiating the photoresist layer through the structure of the first mask with the wavelength ( lambda 1); removing the mask; applying a second mask having a second structure transparent for a second wavelength ( lambda 2); irradiating the photoresist layer through the structure of the second mask with the wavelength ( lambda 2); removing the second mask; and developing the resist layer. Preferred Features: The difference between the first and second wavelengths is at least 30 nm. The photoresist layer is heated treated after the first mask is applied and after the second mask is removed.
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公开(公告)号:DE10131667A1
公开(公告)日:2003-01-16
申请号:DE10131667
申请日:2001-06-29
Applicant: INFINEON TECHNOLOGIES AG
Inventor: ROTTSTEGGE JOERG , KUEHN EBERHARD , HERBST WALTRAUD , ESCHBAUMER CHRISTIAN , HOHLE CHRISTOPH , FALK GERTRUD , SEBALD MICHAEL
Abstract: Production of amplified negative resist structures uses a chemically amplified resist containing a polymer (IA) with acid-labile groups, releasing an anchor group (AG) to give a polymer (IB) with changed polarity, a photoacid and a solvent (II). Development after exposure uses a developer containing a solvent for (IA) but not (IB) and an agent containing silicon and group(s) co-ordinating with AG. Production of amplified negative resist structures comprises: (1) coating a substrate with a chemically amplified resist containing a polymer (IA) with acid-labile groups, which release an anchor group (AG), giving a polymer (IB) with changed polarity, a photoacid and a solvent (II); (2) removing (II); (3) selective exposure to liberate acid; (4) contrasting by releasing AG; (5) development with a developer containing a solvent, in which (IA) is soluble but (IB) is largely insoluble or swellable, and an amplifying agent containing silicon, which contains reactive group(s) that can co-ordinate with AG; and (6) removing excess developer.
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公开(公告)号:DE10121178A1
公开(公告)日:2002-12-05
申请号:DE10121178
申请日:2001-04-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor: CZECH GUENTHER , RICHTER ERNST-CHRISTIAN , SCHELER ULRICH , SEBALD MICHAEL
Abstract: Determining image distortions of photomasks comprises applying a photo-active layer on a substrate; forming a latent image of the mask in the photo-active layer by irradiating; treating with amplifying agent which reacts with components of the material of the photo-active layer to form a chemical bond; and determining the growth of the photo-active layer outside and/or inside the image of the mask. Independent claims are also included for the following: (i) a process for optimizing the layout of a photomask; and (ii) a process for determining the local radiation dose. Preferred Features: After producing the latent image, a contrasting step is carried out, preferably by heat treating. An anti-reflection layer is formed on the substrate below the photo-active layer.
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