公开(公告)号：DE102007057669A1

公开(公告)日：2009-06-04

申请号：DE102007057669

申请日：2007-11-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： WIRTH RALPH

IPC: H01L33/50 ,  H01L33/60

Abstract: The component (1) has a semiconductor chip (3) e.g. thin film semiconductor chip, arranged in a chip housing (2) and generating a radiation. A conversion unit (4) unchanges a portion of the radiation, such that the unchanged portion has a short wavelength, and converts another portion, such that the converted portion has a long wavelength. A chip-remote angle filter unit (5) has a small incidence angle in an incidence angle area than in another incidence angle area and reflects the unchanged portion stronger than the converted portion, where the filter unit is arranged on a carrier (9).

公开(公告)号：DE102008009262A1

公开(公告)日：2008-08-28

申请号：DE102008009262

申请日：2008-02-15

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BERGENEK KRISTER ,  WIRTH RALPH

IPC: H01L33/14 ,  H01L33/44 ,  H01L33/46

Abstract: The semiconductor chip (100) has a semiconductor body (4) that includes a main surface (7) with a contact surface (8) and an active area. A contact area (5) is provided for electrical contacting of the semiconductor body, and is laterally arranged at a distance from the contact surface. An electrically conductive contact layer (1) is permeable for radiations emitted by the active area. The layer (1) is connected with the area (5), and a photonic crystal (9) or a quasi-crystal is arranged at a side flank of the body. Another contact layer (2) contains transparent conducting oxide material.

公开(公告)号：DE102006046037A1

公开(公告)日：2008-04-03

申请号：DE102006046037

申请日：2006-09-28

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： WIRTH RALPH ,  WINDISCH REINER

IPC: H01L33/08 ,  H01L33/20

Abstract: The light emitting diode semiconductor body (1) has a radiation generating active layers (31,32) and a photonic crystal (6). The photonic crystal has a number of areas (6a) with a refractive index and another number of areas (6b) with another refractive index. The reflection layer contains materials like aluminum, zinc and silver, a transparent conductive oxide, silicon nitride. The semiconductor body, particularly one of the two active layers or both active layers, containing compound consist of aluminium, gallium, indium, phosphorus, arsenic and nitrogen.

公开(公告)号：DE102006023685A1

公开(公告)日：2007-04-05

申请号：DE102006023685

申请日：2006-05-19

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： PLOESL ANDREAS ,  WIRTH RALPH

IPC: H01L33/00 ,  H01L33/10 ,  H01L33/42 ,  H01S5/02

Abstract: The chip has a semiconductor layered construction (1) that is provided with an active region (4) for producing electromagnetic radiation. A transparent conducting oxide (TCO) support substrate (10) is provided on the semiconductor layered construction. The support substrate comprising a material from a group of transparent conducting oxides mechanically supports the semiconductor layered construction.

公开(公告)号：DE102006004591A1

公开(公告)日：2007-04-05

申请号：DE102006004591

申请日：2006-02-01

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： WIRTH RALPH

IPC: H01L33/10 ,  H01S5/00

Abstract: The chip has a thin-film semiconductor body (2) including a semiconductor layer sequence with an active region (4) suitable for generating radiation. A reflector layer (5) is arranged on the body. The reflector layer and a Bragg reflector (6) are arranged on a same side of the active region. The Bragg reflector is monolithically integrated in the semiconductor layer sequence of the body. The reflector layer is arranged between a substrate (3) and the body. The reflector layer has a reflectivity of 95 percentage or above for the radiation to be generated in the active region.

公开(公告)号：DE102004040277A1

公开(公告)日：2006-02-09

申请号：DE102004040277

申请日：2004-08-19

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： KRAEUTER GERTRUD ,  WIRTH RALPH ,  PLOESL ANDREAS ,  ZULL HERIBERT

IPC: H01L33/46

Abstract: The invention describes a method for producing a reflective layer system and a reflective layer system for application to a III/V compound semiconductor material, wherein a first layer, containing phosphosilicate glass, is applied directly to the semiconductor substrate Disposed thereon is a second layer, containing silicon nitride. A metallic layer is then applied thereto.

公开(公告)号：DE10329398A1

公开(公告)日：2005-02-03

申请号：DE10329398

申请日：2003-06-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STEIN WILHELM ,  ZOELFL MICHAEL ,  WIRTH RALPH

IPC: H01L33/14 ,  H01L33/38 ,  H01L33/40 ,  H01L33/00

Abstract: Radiation-emitting semiconductor chip (1) comprises a brightness adjusting layer (12) arranged between a connecting region (4) and a current injection region (5) on a radiation coupling surface (10) of a semiconductor layer sequence (3) to absorb a part of the radiation produced in the semiconductor layer sequence. Independent claims are also included for: (a) process for adjusting the brightness of a radiation-emitting semiconductor chip; and (b) process for the production of a semiconductor chip.

公开(公告)号：DE10291889D2

公开(公告)日：2004-04-15

申请号：DE10291889

申请日：2002-04-26

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： WIRTH RALPH

IPC: H01L33/20 ,  H01L33/38 ,  H01L33/00

Abstract: A semiconductor chip, in particular a light-emitting diode, has a substrate ( 2 ), on which a sequence of semiconductor layers ( 3 ) with an active zone ( 5 ) has been applied. Above the sequence of semiconductor layers ( 3 ) there is a stepped window layer ( 6 ), which is structured in the manner of a Fresnel lens and has with regard to the coupling out of radiation the function of a hemispherical lens ( 7 ). This produces a semiconductor chip with particularly high coupling-out efficiency.

公开(公告)号：DE10059532A1

公开(公告)日：2002-06-06

申请号：DE10059532

申请日：2000-11-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： PLOESL ANDREAS ,  STREUBEL KLAUS ,  WEGLEITER WALTER ,  WIRTH RALPH ,  ILLEK STEFAN

IPC: H01L33/00 ,  H01L33/10 ,  H01L33/20 ,  H01S5/022

Abstract: A recess (8) made in an active layer (2) from a fastening side (11) breaks up an active zone (3). A number of recesses form elevations (4) on a connection layer (5) for the active layer. The connection layer has a contact point (7) formed by a metallized layer. Rear side elevations formed by the recesses are covered with a reflective layer made up of a dielectric insulating layer (9) and a metallized layer (10) applied to it.

公开(公告)号：DE10038671A1

公开(公告)日：2002-02-28

申请号：DE10038671

申请日：2000-08-08

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： PLOESL ANDREAS ,  STREUBEL KLAUS ,  WEGLEITER WALTER ,  WIRTH RALPH ,  ILLEK STEFAN

IPC: H01L33/00 ,  H01L33/08 ,  H01L33/10 ,  H01L33/20 ,  H01L33/30

Abstract: An active layer (2) having a photo-emitting zone (3) has a carrier layer (1) formed on its bonding side. Recesses (8) formed in the active layer, have cross-sectional area which decreases with increasing depth of the recesses into the active layer, from the bonding side.