Transmission electron microscope
    64.
    发明授权
    Transmission electron microscope 有权
    透射电子显微镜

    公开(公告)号:US08598526B2

    公开(公告)日:2013-12-03

    申请号:US13036757

    申请日:2011-02-28

    Applicant: Gerd Benner

    Inventor: Gerd Benner

    Abstract: A transmission electron microscope in which a sample is positioned in a sample plane 9b comprises an objective lens 11b, a first projection lens system 61b having plural lenses, a second projection lens 63b system having plural lenses, and an analyzing system.The sample plane 9b is imaged into an intermediate image plane 71, a diffraction plane 15b of the objective lens 11b is imaged into an intermediate diffraction plane 67b, and either a) the intermediate image plane is imaged into an entrance image plane of the analyzing system and the intermediate diffraction plane is imaged into an entrance pupil plane of the analyzing system, or b) the intermediate image plane 71 is imaged into the entrance pupil plane 65b and the intermediate diffraction plane 67b is imaged into the entrance image plane 21b.

    Abstract translation: 样品位于样品平面9b中的透射电子显微镜包括物镜11b,具有多个透镜的第一投影透镜系统61b,具有多个透镜的第二投影透镜63b系统和分析系统。 将样品平面9b成像为中间像面71,将物镜11b的衍射面15b成像为中间衍射面67b,将中间像平面成像为分析系统的入射像面 中间衍射面成像为分析系统的入射光瞳面,或者b)将中间像面71成像为入射光瞳面65b,将中间衍射面67b成像为入射像面21b。

    Electron spectroscopy
    67.
    发明授权
    Electron spectroscopy 有权
    电子光谱学

    公开(公告)号:US08481931B2

    公开(公告)日:2013-07-09

    申请号:US12482577

    申请日:2009-06-11

    Applicant: Simon Page

    Inventor: Simon Page

    Abstract: The present invention provides an electron spectroscopy apparatus (12) comprising a high energy particle source (12) for irradiating a sample, an electron detector system (16) (e.g. including a delay line detector) for detecting electrons emitted from the sample and an ion gun (8) for delivering a polycyclic aromatic hydrocarbon (PAH) ion beam to the sample, wherein the ion gun comprises a polycyclic aromatic hydrocarbon ion source, for example comprising coronene. In an embodiment, the PAH is located in a heated chamber (22) and vaporised to produce gas phase PAH. The gas phase PAH molecules are then ionised by electron impact, extracted from the ion source via an extraction field and focussed using ion optics. The PAH ion beam can be used for surface cleaning and depth analysis.

    Abstract translation: 本发明提供了一种包括用于照射样品的高能粒子源(12),用于检测从样品发射的电子的电子检测器系统(16)(例如包括延迟线检测器)的电子能谱装置(12) 用于将多环芳烃(PAH)离子束输送到样品的枪(8),其中所述离子枪包括多环芳族烃离子源,例如包含芳烃。 在一个实施方案中,PAH位于加热室(22)中并蒸发以产生气相PAH。 气相PAH分子然后通过电子轰击电离,通过提取场从离子源提取,并使用离子光学聚焦。 PAH离子束可用于表面清洁和深度分析。

    Low contamination, low energy beamline architecture for high current ion implantation
    69.
    发明授权
    Low contamination, low energy beamline architecture for high current ion implantation 有权
    低电流离子注入的低污染,低能束线架构

    公开(公告)号:US07994488B2

    公开(公告)日:2011-08-09

    申请号:US12108890

    申请日:2008-04-24

    Inventor: Yongzhang Huang

    Abstract: An ion implantation system comprising an ion source that generates an ion beam along a beam path, a mass analyzer component downstream of the ion source that performs mass analysis and angle correction on the ion beam, a resolving aperture electrode comprising at least one electrode downstream of the mass analyzer component and along the beam path having a size and shape according to a selected mass resolution and a beam envelope, a deflection element downstream of the resolving aperture electrode that changes the path of the ion beam exiting the deflection element, a deceleration electrode downstream of the deflection element that decelerates the ion beam, a support platform within an end station for retaining and positioning a workpiece which is implanted with charged ions, and wherein the end station is mounted approximately eight degrees counterclockwise so that the deflected ion beam is perpendicular to the workpiece.

    Abstract translation: 一种离子注入系统,包括沿光束路径产生离子束的离子源,离子源下游的质量分析器组件,其对离子束执行质量分析和角度校正;分辨孔径电极,包括至少一个电极 所述质量分析器部件并且沿着所述光束路径具有根据所选择的质量分辨率和光束包络的尺寸和形状;在所述分辨孔径电极下游的偏转元件改变离开偏转元件的离子束的路径;减速电极 在偏转元件的下游,使离子束减速,在终端站内的支撑平台,用于保持和定位植入有带电离子的工件,并且其中终端站逆时针安装大约八度,使得偏转的离子束垂直 到工件。

    Apparatus and method for partial ion implantation
    70.
    发明授权
    Apparatus and method for partial ion implantation 失效
    用于部分离子注入的装置和方法

    公开(公告)号:US07728312B2

    公开(公告)日:2010-06-01

    申请号:US11957914

    申请日:2007-12-17

    Abstract: An apparatus and method for partial ion implantation, which desirably provide control over the energy of the implanted dopants, generally includes an ion beam generator, and first and second deceleration units. The first deceleration unit decelerates the energy of an ion beam generated by the ion beam generator; and a subsequent, second deceleration unit further decelerates the energy into different energy levels according to regions of a wafer into which the ions are to be implanted.

    Abstract translation: 用于部分离子注入的装置和方法,其期望地提供对注入的掺杂剂的能量的控制,通常包括离子束发生器以及第一和第二减速单元。 第一减速单元减速由离子束发生器产生的离子束的能量; 并且随后的第二减速单元根据要离子注入的晶片的区域进一步将能量减速到不同的能级。

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