Abstract:
An ion implantation system, ion source, and method are provided having a gaseous aluminum-based ion source material. The gaseous aluminum-based ion source material can be, or include, dimethylaluminum chloride (DMAC), where the DMAC is a liquid that transitions into vapor phase at room temperature. An ion source receives and ionizes the gaseous aluminum-based ion source material to form an ion beam. A low-pressure gas bottle supplies the DMAC as a gas to an arc chamber of the ion source by a primary gas line. A separate, secondary gas line supplies a co-gas, such as a fluorine-containing molecule, to the ion source, where the co-gas and DMAC reduce an energetic carbon cross-contamination and/or increase doubly charged aluminum.
Abstract:
A system for performing surface analysis on a material, includes a pulsed electron source that forms a monochromatic beam of incident electrons; means for conveying the incident electrons to the surface of a sample of material, so as to form backscattered electrons, and the backscattered electrons to detecting means, the conveying means comprising at least one electron optical system; means for detecting the backscattered electrons; the pulsed electron source comprising: a source of atoms; a continuous-wave laser beam configured to form a laser excitation zone able to excite the atoms to Rydberg states; a pulsed electric field on either side of the laser excitation zone, the pulsed electric field being configured to ionize at least the excited atoms and to form a monochromatic beam of electrons.
Abstract:
An electron energy loss spectrometer is described having a direct detection sensor, a high speed shutter and a sensor processor wherein the sensor processor combines images from individual sensor read-outs and converts a two dimensional image from said sensor into a one dimensional spectrum and wherein the one dimensional spectrum is output to a computer and operation of the high speed shutter is integrated with timing of imaging the sensor. The shutter is controlled to allow reduction in exposure of images corresponding to the individual sensor readouts. A plurality of images are exposed by imaging less than the full possible exposure and wherein the plurality of images are combined to form a composite image. The plurality of images can be comprised of images created by exposing the sensor for different exposure times.
Abstract:
A transmission electron microscope in which a sample is positioned in a sample plane 9b comprises an objective lens 11b, a first projection lens system 61b having plural lenses, a second projection lens 63b system having plural lenses, and an analyzing system.The sample plane 9b is imaged into an intermediate image plane 71, a diffraction plane 15b of the objective lens 11b is imaged into an intermediate diffraction plane 67b, and either a) the intermediate image plane is imaged into an entrance image plane of the analyzing system and the intermediate diffraction plane is imaged into an entrance pupil plane of the analyzing system, or b) the intermediate image plane 71 is imaged into the entrance pupil plane 65b and the intermediate diffraction plane 67b is imaged into the entrance image plane 21b.
Abstract:
A method of using a direct electron detector in a TEM, in which an image with a high intensity peak, such as a diffractogram or an EELS spectrum, is imaged on said detector. As known the high intensity peak may damage the detector. To avoid this damage, the center of the image is moved, as a result of which not one position of the detector is exposed to the high intensity, but the high intensity is smeared over the detector, displacing the high intensity peak before damage results.
Abstract:
The present invention relates to a method of mass spectrometry, an apparatus adapted to perform the method and a mass spectrometer. More particularly, but not exclusively, the present invention relates to a method of mass spectrometry comprising the step of associating parent and fragmentation ions from a sample by measuring the parent and fragmentation ions from two or more different areas of the sample and identifying changes in the number of parent ions between the areas in the sample, and corresponding changes in the number of fragmentation ions between the two areas.
Abstract:
The present invention provides an electron spectroscopy apparatus (12) comprising a high energy particle source (12) for irradiating a sample, an electron detector system (16) (e.g. including a delay line detector) for detecting electrons emitted from the sample and an ion gun (8) for delivering a polycyclic aromatic hydrocarbon (PAH) ion beam to the sample, wherein the ion gun comprises a polycyclic aromatic hydrocarbon ion source, for example comprising coronene. In an embodiment, the PAH is located in a heated chamber (22) and vaporised to produce gas phase PAH. The gas phase PAH molecules are then ionised by electron impact, extracted from the ion source via an extraction field and focussed using ion optics. The PAH ion beam can be used for surface cleaning and depth analysis.
Abstract:
A method of using a direct electron detector in a TEM, in which an image with a high intensity peak, such as a diffractogram or an EELS spectrum, is imaged on said detector. As known the high intensity peak may damage the detector. To avoid this damage, the centre of the image is moved, as a result of which not one position of the detector is exposed to the high intensity, but the high intensity is smeared over the detector, displacing the high intensity peak before damage results.
Abstract:
An ion implantation system comprising an ion source that generates an ion beam along a beam path, a mass analyzer component downstream of the ion source that performs mass analysis and angle correction on the ion beam, a resolving aperture electrode comprising at least one electrode downstream of the mass analyzer component and along the beam path having a size and shape according to a selected mass resolution and a beam envelope, a deflection element downstream of the resolving aperture electrode that changes the path of the ion beam exiting the deflection element, a deceleration electrode downstream of the deflection element that decelerates the ion beam, a support platform within an end station for retaining and positioning a workpiece which is implanted with charged ions, and wherein the end station is mounted approximately eight degrees counterclockwise so that the deflected ion beam is perpendicular to the workpiece.
Abstract:
An apparatus and method for partial ion implantation, which desirably provide control over the energy of the implanted dopants, generally includes an ion beam generator, and first and second deceleration units. The first deceleration unit decelerates the energy of an ion beam generated by the ion beam generator; and a subsequent, second deceleration unit further decelerates the energy into different energy levels according to regions of a wafer into which the ions are to be implanted.