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    83.
    发明专利
    未知

    公开(公告)号：DE102004005694B3

    公开(公告)日：2005-10-06

    申请号：DE102004005694

    申请日：2004-02-05

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： SEIDL HARALD

    IPC: H01L21/334 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/08 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

    Abstract: The present invention provides a trench capacitor, particularly for use in a semiconductor memory cell, having a trench which is formed in a semiconductor substrate; a first conductive capacitor plate which is situated in and/or next to the trench; a second conductive capacitor plate which is situated in the trench; a dielectric layer, which is situated between the first and second capacitor plates, as capacitor dielectric; and an insulating collar in the upper region of the trench. At least one layer of the first first conductive capacitor plate and/or of the second conductive capacitor plate is made of a material from the class containing the metal borides, metal phosphides and metal antimonides of the transition metals from the secondary groups IV, V and VI of the periodic table.

    86.
    发明专利
    未知

    公开(公告)号：DE10248980B4

    公开(公告)日：2004-11-11

    申请号：DE10248980

    申请日：2002-10-21

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： SEIDL HARALD ,  GUTSCHE MARTIN

    IPC: C23C16/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/316 ,  H01L21/334 ,  H01L21/8242 ,  H01L21/28

    Abstract: Production of structured silicon dioxide layers on process surfaces arranged perpendicular or slanted towards a substrate surface comprises preparing a substrate (4) with a relief in a process chamber, forming a starter layer (17) with leaving groups substituted by hydroxyl groups on sections of the process surfaces which extend from the substrate surface up to a determined covering depth of the relief, and applying tris(tert.-butoxy)silanol to the substrate so that a silicon dioxide layer (18) is selectively grown on the starter layer.

    87.
    发明专利
    未知

    公开(公告)号：DE10216614B4

    公开(公告)日：2004-06-17

    申请号：DE10216614

    申请日：2002-04-15

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： HECHT THOMAS ,  BIRNER ALBERT ,  SEIDL HARALD ,  SCHROEDER UWE ,  JAKSCHIK STEFAN ,  GUTSCHE MARTIN

    IPC: C25D11/02 ,  C25D11/32 ,  H01L21/316 ,  H01L21/8242 ,  H01L21/318 ,  H01L21/3105 ,  H01L27/108

    Abstract: Production of a thin dielectric layer (2) on a conducting substrate (1) comprises applying a thin dielectric layer on the substrate, placing in an electrochemical cell (5) filled with an electrolyte (9) and having two electrodes (6, 7), connecting the substrate with the first electrode and the second electrode with the electrolyte, and applying an electrical potential between the electrodes. The current flow between the electrolyte and substrate is controlled in an electrochemical process and is adjusted by the dielectric layer, preferably in the region of defect sites. An Independent claim is also included for an arrangement of a substrate and a dielectric layer.

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