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81.发明公开ION IMPLANTATION AND ANNEALING FOR HIGH EFFICIENCY BACK-CONTACT BACK-JUNCTION SOLAR CELLS 审中-公开离子注入和-GLÜHUNG与背接触和保持高效率太阳能电池
公开(公告)号：EP2715797A4
公开(公告)日：2015-05-27
申请号：EP12793962
申请日：2012-05-29
Applicant: SOLEXEL INC
Inventor： MOSLEHI MEHRDAD M , RANA VIRENDRA V , KAPUR PAWAN
IPC: H01L31/18
CPC classification number: H01L31/02363 , H01L21/26513 , H01L21/26586 , H01L21/268 , H01L21/324 , H01L31/035281 , H01L31/0682 , H01L31/1804 , H01L31/1864 , Y02E10/547 , Y02P70/521
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82.发明公开HIGH-EFFICIENCY PHOTOVOLTAIC BACK-CONTACT SOLAR CELL STRUCTURES AND MANUFACTURING METHODS USING THIN PLANAR SEMICONDUCTORS 有权高效率光伏背接触太阳能电池结构及其制造方法使用薄平面SEMICONDUCTORS
公开(公告)号：EP2510551A4
公开(公告)日：2014-11-26
申请号：EP10836710
申请日：2010-12-09
Applicant: SOLEXEL INC
Inventor： MOSLEHI MEHRDAD M , KAPUR PAWAN , KRAMER KARL-JOSEF , WANG DAVID XUAN-QI , SEUTTER SEAN , RANA VIRENDRA V , CALCATERRA ANTHONY , VAN KERSCHAVER EMMANUEL
IPC: H01L31/042 , H01L31/0216 , H01L31/068 , H01L31/18
CPC classification number: H01L31/0236 , H01L31/0201 , H01L31/02167 , H01L31/022441 , H01L31/022458 , H01L31/02363 , H01L31/035281 , H01L31/03529 , H01L31/03921 , H01L31/056 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , H01L31/1892 , Y02E10/52 , Y02E10/547 , Y02P70/521
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公开(公告)号：EP2659518A4
公开(公告)日：2014-09-24
申请号：EP11853473
申请日：2011-12-30
Applicant: SOLEXEL INC
Inventor： MOSLEHI MEHRDAD M , RANA VIRENDRA V , ANBALAGAN PRANAV , SARASWAT VIVEK
IPC: H01L31/068 , B23K26/06 , B23K26/40 , H01L21/268 , H01L31/0236 , H01L31/18
CPC classification number: H01L31/02363 , B23K26/0624 , B23K26/40 , B23K2203/50 , H01L21/268 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
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公开(公告)号：EP2659504A4
公开(公告)日：2014-05-07
申请号：EP11856289
申请日：2011-12-31
Applicant: SOLEXEL INC
Inventor： KRAMER KARL-JOSEF , MOSLEHI MEHRDAD M , YOKOI SEIICHI , KAMIAN GEORGE D , SHARMA SHASHANK , ASHJAEE JAY
IPC: H01L21/205 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/48 , C30B25/12 , C30B25/14 , C30B29/06 , H01L21/20
CPC classification number: C23C16/45502 , C23C16/4412 , C23C16/45517 , C23C16/4582 , C23C16/4583 , C23C16/4587 , C23C16/481 , C30B25/12 , C30B25/14 , C30B29/06
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85.发明公开
公开(公告)号：EP2561558A4
公开(公告)日：2014-04-16
申请号：EP11772838
申请日：2011-04-23
Applicant: SOLEXEL INC
Inventor： DESHPANDE ANAND , RICOLCOL RAFAEL , SEUTTER SEAN , KRAMER KARL-JOSEF , MOSLEHI MEHRDAD M
IPC: H01L31/18 , H01L31/0216 , H01L31/042
CPC classification number: H01L31/02167 , H01L31/1864 , H01L31/1868 , Y02E10/50 , Y02P70/521
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Patent Agency Ranking
公开(公告)号：EP2601687A4
公开(公告)日：2018-03-07
申请号：EP11871380
申请日：2011-08-05
Applicant: SOLEXEL INC
Inventor： MOSLEHI MEHRDAD M , WANG DAVID XUAN-QI , KRAMER KARL-JOSEF , SEUTTER SEAN , TOR SAM TONE , CALCATERRA ANTHONY
IPC: H01L31/02 , H01L31/0224 , H01L31/05 , H01L31/18
CPC classification number: H01L31/022458 , H01L31/02008 , H01L31/02013 , H01L31/022441 , H01L31/028 , H01L31/0516 , H01L31/0682 , H01L31/1804 , H01L31/1892 , Y02E10/50
Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects are described. The method comprises depositing an interdigitated pattern of base electrodes and emitter electrodes on a backside surface of a semiconductor substrate, forming electrically conductive emitter plugs and base plugs on the interdigitated pattern, and attaching a backplane having a second interdigitated pattern of base electrodes and emitter electrodes at the conductive emitter and base plugs to form electrical interconnects.
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87.发明公开HIGH-THROUGHPUT BATCH POROUS SILICON MANUFACTURING EQUIPMENT DESIGN AND PROCESSING METHODS 有权DRAFT设备多孔硅的高通量和处理其生产
公开(公告)号：EP2619790A4
公开(公告)日：2015-11-11
申请号：EP11827704
申请日：2011-09-24
Applicant: SOLEXEL INC
Inventor： YONEHARA TAKAO , TAMILMANI SUBRAMANIAN , KRAMER KARL-JOSEF , ASHJAEE JAY , MOSLEHI MEHRDAD M , MIYAJI YASUHIRO , HAYASHI TOKUYUKI , INAHARA TAKAMITSU
CPC classification number: C25F3/12 , C25D11/005 , C25D11/32 , C25D17/001 , C25D17/06 , C25F7/00
Abstract: This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.
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88.发明公开HIGH-EFFICIENCY SOLAR PHOTOVOLTAIC CELLS AND MODULES USING THIN CRYSTALLINE SEMICONDUCTOR ABSORBERS 审中-公开高效率的太阳能光伏和模块薄晶体半导体吸收
公开(公告)号：EP2742536A4
公开(公告)日：2015-08-12
申请号：EP12822670
申请日：2012-08-09
Applicant: SOLEXEL INC
Inventor： MOSLEHI MEHRDAD M , KAPUR PAWAN , KRAMER K-JOSEF , RANA VIRENDRA V , SEUTTER SEAN , DESHPANDE ANAND , CALCATERRA ANTHONY , OLSEN GERRY , MANTEGHI KAMRAN , STALCUP THOM , KAMIAN GEORGE D , WANG DAVID XUAN-QI , SU YEN-SHENG , WINGERT MICHAEL
IPC: H01L31/042 , H01L31/18
CPC classification number: H01L31/022441 , H01L31/0201 , H01L31/02167 , H01L31/02327 , H01L31/03765 , H01L31/0392 , H01L31/049 , H01L31/0516 , H01L31/0682 , H01L31/075 , H01L31/1812 , H01L31/1896 , Y02E10/547
Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects as well as Fabrication methods and structures for forming thin film back contact solar cells are described.
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89.发明公开HIGH-EFFICIENCY PHOTOVOLTAIC BACK-CONTACT SOLAR CELL STRUCTURES AND MANUFACTURING METHODS USING SEMICONDUCTOR WAFERS 审中-公开高效率光伏背接触太阳能电池结构和工艺，用于使用半导体晶圆
公开(公告)号：EP2510552A4
公开(公告)日：2014-11-05
申请号：EP10836723
申请日：2010-12-09
Applicant: SOLEXEL INC
Inventor： MOSLEHI MEHRDAD M , KAPUR PAWAN , KRAMER KARL-JOSEF , WANG DAVID XUAN-QI , SEUTTER SEAN , RANA VIRENDRA V , CALCATERRA ANTHONY , VAN KERSCHAVER EMMANUEL , HARWOOD DUNCAN , MANSOORI MAJID , WINGERT MICHAEL
IPC: H01L31/042 , H01L31/0216
CPC classification number: H01L31/0236 , H01L31/0201 , H01L31/02167 , H01L31/022441 , H01L31/022458 , H01L31/02363 , H01L31/035281 , H01L31/03529 , H01L31/03921 , H01L31/056 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , H01L31/1892 , Y02E10/52 , Y02E10/547 , Y02P70/521
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公开(公告)号：EP2691990A4
公开(公告)日：2014-09-03
申请号：EP12765891
申请日：2012-03-28
Applicant: SOLEXEL INC
Inventor： MOSLEHI MEHRDAD M , KRAMER KARL-JOSEF , SEUTTER SEAN , KAPUR PAWAN , STALCUP THOM , WANG DAVID XUAN-QI , KAMIAN GEORGE D , MANTEGHI KAMRAN , SU YEN-SHENG , ANBALAGAN PRANAV , RANA VIRENDRA V , CALCATERRA ANTHONY , OLSEN GERRY , WORWAG WOJCIECH
IPC: H01L31/042 , H01L31/0216 , H01L31/0224 , H01L31/05 , H01L31/068 , H01L31/18
CPC classification number: H01L31/022441 , H01L31/0516 , H01L31/0682 , H01L31/1892 , Y02E10/547
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