公开(公告)号：KR1020140000158A

公开(公告)日：2014-01-02

申请号：KR1020130070236

申请日：2013-06-19

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 가와노히사시 ,  이토노리히로 ,  하치야요스케 ,  노가미준 ,  오오이시고타로 ,  간노이타루

IPC: H01L21/311 ,  H01L21/306

CPC classification number: H01L21/02057 ,  G03F7/423 ,  H01L21/31133 ,  H01L21/67051

Abstract: The purpose of the present invention is to smoothly remove a target layer without damaging a lower layer of the substrate. The substrate processing device (1) removes the target layer by supplying a mixture of sulfuric acid and hydrogen peroxide on a substrate (3) in which the target layer is formed on the surface of the lower layer. The substrate processing device (1) includes a substrate processing chamber (16) for processing the substrate (3), a substrate maintaining member (12) installed at the substrate processing chamber (16) and formed to maintain the substrate (3), a mixture supply member (13) for supplying the mixture of the sulfuric acid and hydrogen peroxide on the substrate maintained by the substrate maintaining member (12) at temperatures and a mixing ratio of the hydrogen peroxide which does not damage the lower layer, and an OH group supply member (14) for supplying fluid containing of an OH group on the substrate (3). The OH group supply member (14) supplies the fluid containing of the OH group which does not damage the lower layer when the mixture and the OH group are mixed in the substrate (3).

Abstract translation: 本发明的目的是平滑地去除目标层而不损坏基底的下层。 基板处理装置（1）通过在下层的表面上形成有目标层的基板（3）上供给硫酸和过氧化氢的混合物来除去目标层。 基板处理装置（1）包括用于处理基板（3）的基板处理室（16），安装在基板处理室（16）上并形成为保持基板（3）的基板保持部件 混合物供应构件（13），用于在不损坏下层的过氧化氢的温度和混合比例下将硫酸和过氧化氢的混合物供给到由基板保持构件（12）保持的基板上，以及OH 用于在衬底（3）上提供含有OH基团的流体的组供应构件（14）。 当混合物和OH基团混合在基材（3）中时，OH基团供给部件（14）供给含有不损坏下层的OH基团的流体。

公开(公告)号：KR1020140111593A

公开(公告)日：2014-09-19

申请号：KR1020140023911

申请日：2014-02-28

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 미즈노츠요시 ,  도쿠나가요이치 ,  남바히로미츠 ,  우에키다츠히로 ,  노가미준 ,  히가시지마지로 ,  아마노요시후미 ,  미야마다카토시

IPC: H01L21/302 ,  H01L21/027

CPC classification number: H01L21/67051

Abstract: An objective of the present invention is to smoothly process a substrate by a processing liquid. The present invention provides a substrate processing apparatus (1) and a substrate processing method, which process a substrate (3) by a processing liquid supplied to the rotating substrate (3) to process the substrate (3), includes: a substrate rotating unit (12) that rotates the substrate (3); processing liquid supply units (13, 14) that supply the processing liquid to the substrate; a collection cup (32) disposed around the substrate (3) to collect the processing liquid supplied to the substrate (3) and form an air stream that flows downward by passing through from an opening (34) formed at the top to the periphery end of the substrate (3); and a negative pressure generating unit (36) which is provided at the inside of the collection cup (32) and at the outside of the opening (34) and generates a negative pressure which acts toward the outside of the substrate (3) so that the negative pressure is generated when processing the substrate (3) by the processing liquid.

Abstract translation: 本发明的目的是通过处理液体平滑地处理衬底。 本发明提供一种基板处理装置（1）和基板处理方法，其通过供给到旋转基板（3）的处理液对基板（3）进行处理，从而对基板（3）进行处理，其特征在于，包括：基板旋转部 （12），其旋转所述基板（3）; 将处理液供给到基板的处理液供给单元（13,14） 设置在所述基板（3）周围的收集杯（32），以收集供给到所述基板（3）的处理液体，并且形成通过从形成在所述顶部的开口（34）穿过的周向端部 的基板（3）; 以及负压生成单元（36），其设置在所述收集杯（32）的内部并且在所述开口（34）的外部，并且产生朝向所述基板（3）的外侧作用的负压，使得 当通过处理液体处理基板（3）时产生负压。

公开(公告)号：KR101828103B1

公开(公告)日：2018-02-09

申请号：KR1020130070236

申请日：2013-06-19

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 가와노히사시 ,  이토노리히로 ,  하치야요스케 ,  노가미준 ,  오오이시고타로 ,  간노이타루

IPC: H01L21/311 ,  H01L21/306

CPC classification number: H01L21/02057 ,  G03F7/423 ,  H01L21/31133 ,  H01L21/67051

Abstract: 본발명은, 기판의하지층에손상을주지않고, 제거대상층을양호하게제거하는것을목적으로한다. 본발명에서는, 하지층의표면에제거대상층을형성한기판(3)에황산과과산화수소수의혼합액을공급하여제거대상층을제거하는기판처리장치(1)에있어서, 기판(3)을처리하기위한기판처리실(16)과, 기판처리실(16)에설치되며, 기판(3)을유지하기위한기판유지수단(12)과, 기판유지수단(12)으로유지된기판에황산과과산화수소수의혼합액을하지층에손상을주지않는온도및 과산화수소수의혼합비로공급하는혼합액공급수단(13)과, 기판(3)에 OH기를포함하는유체를공급하는 OH기공급수단(14)을가지며, OH기공급수단(14)은, 혼합액과 OH기가기판(3) 상에서혼합되었을때에하지층에손상을주지않는양의 OH기를포함하는유체를공급하는것으로하였다.

Abstract translation: 本发明的一个目的是令人满意地去除去除目标层而不损坏基板的基层。 衬底就目前来说，为在基板3上去除移除目标层通过供给混合液的硫酸和过氧化氢数目的本发明，以形成层的表面上的移除目标层的基板处理装置1，处理的基片（3）的 衬底保持装置12，其设置在衬底处理室16中，用于在由衬底保持装置12保持的衬底上保持衬底3以及硫酸和过氧化氢水溶液的混合液体; 用于将含有OH基的流体供给基板3的OH基供给装置14. OH基供给装置14向OH基供给装置14供给OH基供给装置14， 当混合液和OH基混合在基板（3）上时，提供含有不损伤底层的含OH基的流体。

公开(公告)号：KR1020130121033A

公开(公告)日：2013-11-05

申请号：KR1020130045384

申请日：2013-04-24

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 하치야요스케 ,  이토노리히로 ,  가와노히사시 ,  노나카준 ,  노가미준

IPC: H01L21/027 ,  H01L21/302

CPC classification number: H01L21/02076 ,  G03F7/423 ,  H01L21/31133 ,  H01L21/6708 ,  H01L21/0273 ,  G11C7/22 ,  H01L21/302 ,  H03K5/156

Abstract: The purpose of the present invention is to reduce damage to a film and improve the efficiency of removing a resist layer in an SPM process. A substrate processing method includes a process for producing an SPM solution of a first temperature including enough Caro’s acid with a resist layer delamination effect by mixing heated sulfuric acid with oxygenated water and a process for cooling the SPM solution to a second temperature to have a film loss reduction effect after the SPM solution of the first temperature is produced, and a process for removing the resist layer by touching the resist layer with the SPM solution of the second temperature.

Abstract translation: 本发明的目的是减少对膜的损伤并提高在SPM工艺中除去抗蚀剂层的效率。 基板处理方法包括通过将加热的硫酸与含氧水混合并制备具有足够的Caro酸的第一温度的SPM溶液和具有抗蚀剂层分层效果的方法，以及将SPM溶液冷却至第二温度的方法以具有 产生在第一温度的SPM溶液之后的膜损失降低效果，以及通过用第二温度的SPM溶液接触抗蚀剂层来除去抗蚀剂层的工艺。